NXP BFU550 NPN wideband silicon RF transistor Data Sheet

SO
T1
43
B
BFU550
NPN wideband silicon RF transistor
Rev. 2.1 — 17 April 2019
1
Product data sheet
Product profile
1.1 General description
NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dualemitter SOT143B package.
The BFU550 is part of the BFU5 family of transistors, suitable for small signal to medium
power applications up to 2 GHz.
1.2 Features and benefits
•
•
•
•
•
Low noise, high breakdown RF transistor
AEC-Q101 qualified
Minimum noise figure (NFmin) = 0.7 dB at 900 MHz
Maximum stable gain 21 dB at 900 MHz
11 GHz fT silicon technology
1.3 Applications
•
•
•
•
Applications requiring high supply voltages and high breakdown voltages
Broadband amplifiers up to 2 GHz
Low noise amplifiers for ISM applications
ISM band oscillators
1.4 Quick reference data
Table 1. Quick reference data
Tamb = 25 °C unless otherwise specified
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VCB
collector-base voltage
open emitter
-
-
24
V
VCE
collector-emitter voltage
open base
-
-
12
V
shorted base
-
-
24
V
open collector
-
-
2
V
-
15
50
mA
-
-
450
mW
VEB
emitter-base voltage
IC
collector current
[1]
Ptot
total power dissipation
Tsp ≤ 87 °C
hFE
DC current gain
IC = 15 mA; VCE = 8 V
60
95
200
Cc
collector capacitance
VCB = 8 V; f = 1 MHz
-
0.72
-
pF
fT
transition frequency
IC = 25 mA; VCE = 8 V; f = 900 MHz
-
11
-
GHz
BFU550
NXP Semiconductors
NPN wideband silicon RF transistor
Symbol
Parameter
Conditions
[2]
Min
Typ
Max
Unit
-
21
-
dB
Gp(max)
maximum power gain
IC = 15 mA; VCE = 8 V; f = 900 MHz
NFmin
minimum noise figure
IC = 1 mA; VCE = 8 V; f = 900 MHz; ΓS = Γopt
-
0.7
-
dB
PL(1dB)
output power at 1 dB gain
compression
IC = 25 mA; VCE = 8 V; ZS = ZL = 50 Ω; f = 900
MHz
-
13.5
-
dBm
[1]
[2]
Tsp is the temperature at the solder point of the collector lead.
If K > 1 then Gp(max) is the maximum power gain. If K < 1 then Gp(max) = MSG.
2
Pinning information
Table 2. Discrete pinning
3
Pin
Description
1
collector
2
base
3
emitter
4
emitter
Simplified outline
4
Graphic symbol
1
3
2
1
3, 4
2
aaa-010459
Ordering information
Table 3. Ordering information
Type number
BFU550
OM7962
[1]
Package
Name
Description
-
plastic surface-mounted package; 4 leads
-
Version
Customer evaluation kit for BFU520, BFU530 and BFU550
SOT143B
[1]
-
The customer evaluation kit contains the following:
• Unpopulated RF amplifier Printed-Circuit Board (PCB)
– Unpopulated RF amplifier Printed-Circuit Board (PCB) with emitter degeneration
– Four SMA connectors for fitting unpopulated Printed-Circuit Board (PCB)
– BFU520, BFU530 and BFU550 samples
– USB stick with data sheets, application notes, models, S-parameter and
noise files
4
Marking
Table 4. Marking
Type number
Marking
Description
BFU550
*TC
* = t : made in Malaysia
* = w : made in China
BFU550
Product data sheet
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BFU550
NXP Semiconductors
NPN wideband silicon RF transistor
5
Design support
Table 5. Available design support
Download from the BFU550 product information page on http://www.nxp.com.
6
Support item
Available
Remarks
Device models for Agilent EEsof EDA ADS
yes
Based on Mextram device model.
SPICE model
yes
Based on Gummel-Poon device
model.
S-parameters
yes
Noise parameters
yes
Customer evaluation kit
yes
Solder pattern
yes
Application notes
yes
See Section 3 and Section 10.
See Section 10.1 and Section 10.2.
Limiting values
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VCB
collector-base voltage
open emitter
-
30
V
VCE
collector-emitter voltage
open base
-
16
V
shorted base
-
30
V
open collector
-
3
V
VEB
emitter-base voltage
IC
collector current
-
80
mA
Tstg
storage temperature
-65
+150
°C
VESD
electrostatic discharge voltage
Human Body Model (HBM) According to JEDEC
standard 22-A114E
-
±150
V
Charged Device Model (CDM) According to
JEDEC standard 22-C101B
-
±2
kV
7
Recommended operating conditions
Table 7. Characteristics
BFU550
Product data sheet
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VCB
collector-base voltage
open emitter
-
-
24
V
VCE
collector-emitter voltage
open base
-
-
12
V
shorted base
-
-
24
V
open collector
-
-
2
V
-
-
50
mA
-
-
10
dBm
-40
-
+150
°C
VEB
emitter-base voltage
IC
collector current
Pi
input power
Tj
junction temperature
ZS = 50 Ω
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Rev. 2.1 — 17 April 2019
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3 / 21
BFU550
NXP Semiconductors
NPN wideband silicon RF transistor
Symbol
Ptot
[1]
8
Parameter
Conditions
total power dissipation
[1]
Tsp ≤ 87 °C
Min
Typ
Max
Unit
-
-
450
mW
Tsp is the temperature at the solder point of the collector lead.
Thermal characteristics
Table 8. Thermal characteristics
Symbol
Rth(j-sp)
[1]
Parameter
Conditions
[1]
thermal resistance from junction to solder point
Typ
Unit
140
K/W
Tsp is the temperature at the solder point of the collector lead.
Tsp has the following relation to the ambient temperature Tamb:
Tsp = Tamb + P × Rth(sp-a)
With P being the power dissipation and Rth(sp-a) being the thermal resistance between
the solder point and ambient. Rth(sp-a) is determined by the heat transfer properties in the
application.
The heat transfer properties are set by the application board materials, the board layout
and the environment e.g. housing.
aaa-010493
600
Ptot
(mW)
500
400
300
200
100
0
0
20
40
60
80
100
120 140
Tsp (°C)
160
Figure 1. Power derating curve
9
Characteristics
Table 9. Characteristics
Tamb = 25 °C unless otherwise specified
Symbol
Parameter
Conditions
Min Typ
Max Unit
V(BR)CBO collector-base breakdown voltage
IC = 100 nA; IE = 0 mA
24
-
-
V
V(BR)CEO collector-emitter breakdown voltage
IC = 150 nA; IB = 0 mA
12
-
-
V
-
15
50
mA
-
<1
-
nA
IC
collector current
ICBO
collector-base cut-off current
BFU550
Product data sheet
IE = 0 mA; VCB = 8 V
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BFU550
NXP Semiconductors
NPN wideband silicon RF transistor
Symbol
Parameter
Conditions
Min Typ
Max Unit
hFE
DC current gain
IC = 15 mA; VCE = 8 V
60
95
200
Ce
emitter capacitance
VEB = 0.5 V; f = 1 MHz
-
1.11 -
pF
Cre
feedback capacitance
VCE = 8 V; f = 1 MHz
-
0.41 -
pF
Cc
collector capacitance
VCB = 8 V; f = 1 MHz
-
0.72 -
pF
fT
transition frequency
IC = 25 mA; VCE = 8 V; f = 900 MHz
-
11
-
GHz
IC = 1 mA
-
15
-
dB
IC = 15 mA
-
25.5 -
dB
-
26.5 -
dB
IC = 1 mA
-
12.5 -
dB
IC = 15 mA
-
21
-
dB
-
21.5 -
dB
IC = 1 mA
-
10
-
dB
IC = 15 mA
-
15
-
dB
IC = 25 mA
-
15
-
dB
IC = 1 mA
-
10
-
dB
IC = 15 mA
-
23
-
dB
IC = 25 mA
-
23.5 -
dB
IC = 1 mA
-
8
-
dB
IC = 15 mA
-
17.5 -
dB
IC = 25 mA
-
18
-
dB
IC = 1 mA
-
4.5
-
dB
IC = 15 mA
-
11.5 -
dB
IC = 25 mA
-
12
-
dB
IC = 1 mA
-
0.55 -
dB
IC = 15 mA
-
0.9
-
dB
IC = 25 mA
-
1.1
-
dB
IC = 1 mA
-
0.7
-
dB
IC = 15 mA
-
0.95 -
dB
IC = 25 mA
-
1.2
dB
Gp(max)
maximum power gain
f = 433 MHz; VCE = 8 V
[1]
IC = 25 mA
f = 900 MHz; VCE = 8 V
[1]
IC = 25 mA
f = 1800 MHz; VCE = 8 V
2
|s21|
insertion power gain
[1]
f = 433 MHz; VCE = 8 V
f = 900 MHz; VCE = 8 V
f = 1800 MHz; VCE = 8 V
NFmin
minimum noise figure
f = 433 MHz; VCE = 8 V; ΓS = Γopt
f = 900 MHz; VCE = 8 V; ΓS = Γopt
BFU550
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2.1 — 17 April 2019
-
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BFU550
NXP Semiconductors
NPN wideband silicon RF transistor
Symbol
Parameter
Conditions
Min Typ
Max Unit
IC = 1 mA
-
1
-
dB
IC = 15 mA
-
1.1
-
dB
IC = 25 mA
-
1.3
-
dB
IC = 1 mA
-
22.5 -
dB
IC = 15 mA
-
24.5 -
dB
IC = 25 mA
-
25
-
dB
IC = 1 mA
-
15
-
dB
IC = 15 mA
-
19
-
dB
IC = 25 mA
-
19
-
dB
IC = 1 mA
-
9.5
-
dB
IC = 15 mA
-
13
-
dB
IC = 25 mA
-
13.5 -
dB
IC = 15 mA
-
9.5
-
dBm
IC = 25 mA
-
13.5 -
dBm
IC = 15 mA
-
10
-
dBm
IC = 25 mA
-
13.5 -
dBm
IC = 15 mA
-
10
-
dBm
IC = 25 mA
-
13
-
dBm
IC = 15 mA
-
19
-
dBm
IC = 25 mA
-
23
-
dBm
IC = 15 mA
-
20
-
dBm
IC = 25 mA
-
23
-
dBm
IC = 15 mA
-
19.5 -
dBm
IC = 25 mA
-
23
dBm
f = 1800 MHz; VCE = 8 V; ΓS = Γopt
Gass
f = 433 MHz; VCE = 8 V; ΓS = Γopt
associated gain
f = 900 MHz; VCE = 8 V; ΓS = Γopt
f = 1800 MHz; VCE = 8 V; ΓS = Γopt
PL(1dB)
output power at 1 dB gain compression
f = 433 MHz; VCE = 8 V; ZS = ZL = 50 Ω
f = 900 MHz; VCE = 8 V; ZS = ZL = 50 Ω
f = 1800 MHz; VCE = 8 V; ZS = ZL = 50 Ω
IP3o
output third-order intercept point
f1 = 433 MHz; f2 = 434 MHz; VCE = 8 V;
ZS = ZL = 50 Ω
f1 = 900 MHz; f2 = 901 MHz; VCE = 8 V;
ZS = ZL = 50 Ω
f1 = 1800 MHz; f2 = 1801 MHz; VCE = 8
V; ZS = ZL = 50 Ω
[1]
-
If K > 1 then Gp(max) is the maximum power gain. If K < 1 then Gp(max) = MSG.
BFU550
Product data sheet
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Rev. 2.1 — 17 April 2019
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6 / 21
BFU550
NXP Semiconductors
NPN wideband silicon RF transistor
9.1 Graphs
IC
(mA)
aaa-011532
32
(7)
(6)
24
(5)
(4)
16
(3)
8
(2)
(1)
0
0
1
2
3
4
5
6
7
VCE (V)
8
Tamb = 25 °C.
1. IB = 25 μA
2. IB = 75 μA
3. IB = 125 μA
4. IB = 175 μA
5. IB = 225 μA
6. IB = 275 μA
7. IB = 325 μA
Figure 2. Collector current as a function of collector-emitter voltage; typical values
aaa-011541
150
hFE
aaa-011542
150
hFE
125
125
(3)
100
100
(2)
75
(1)
(2)
(1)
75
50
50
25
25
0
0
0
5
10
15
20
25
IC (mA)
30
0
5
10
15
20
25
IC (mA)
30
Tamb = 25 °C.
1. VCE = 3.0 V
2. VCE = 8.0 V
VCE = 8 V.
1. Tamb = -40 °C
2. Tamb = +25 °C
3. Tamb = +125 °C
Figure 3. DC current gain as function of collector
current; typical values
Figure 4. DC current gain as function of collector
current; typical values
BFU550
Product data sheet
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BFU550
NXP Semiconductors
NPN wideband silicon RF transistor
aaa-011543
IC
(mA)
IB
(mA)
10
aaa-011544
10
10-1
10-1
10-3
10-3
(2)
(1)
10-5
0.5
0.6
0.7
(1)
(2)
10-5
0.8
0.9
VBE (V)
1.0
Tamb = 25 °C.
1. VCE = 3.0 V
2. VCE = 8.0 V
10-7
0.5
0.6
0.7
0.8
0.9
VBE (V)
1.0
Tamb = 25 °C.
1. VCE = 3.0 V
2. VCE = 8.0 V
Figure 5. Collector current as a function of base-emitter Figure 6. Base current as a function of base-emitter
voltage; typical values
voltage; typical values
aaa-011545
10-4
IBR
(A)
aaa-011546
845
CC
(fF)
10-5
815
10-6
(1)
(2)
(3)
785
10-7
755
10-8
1
1.4
1.8
2.2
2.6
VEB (V)
3
725
VCE = 3 V.
1. Tamb = -40 °C
2. Tamb = +25 °C
3. Tamb = +125 °C
IC = 0 mA; f = 1 MHz; Tamb = 25 °C.
Figure 7. Reverse base current as a function of emitterbase voltage; typical values
Figure 8. Collector capacitance as a function of
collector-base voltage; typical values
BFU550
Product data sheet
695
0
2
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Rev. 2.1 — 17 April 2019
4
6
8
10
VCB (V)
12
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BFU550
NXP Semiconductors
NPN wideband silicon RF transistor
aaa-011547
12
fT
(GHz)
10
(4)
(3)
(2)
8
(1)
6
4
2
0
0
5
10
15
20
25
30
35
IC (mA)
40
Tamb = 25 °C.
1. VCE = 3.3 V
2. VCE = 5.0 V
3. VCE = 8.0 V
4. VCE = 12.0 V
Figure 9. Transition frequency as a function of collector current; typical values
G
(dB)
aaa-011548
40
G
(dB)
30
aaa-011549
40
30
MSG
MSG
20
20
Gp(max)
|s21|2
10
0
0
500
1000
1500
Gp(max)
MSG
2000
2500
f (MHz)
3000
0
MSG
|s21|2
10
0
500
1000
1500
2000
2500
f (MHz)
3000
IC = 15 mA; VCE = 8 V; Tamb = 25 °C.
IC = 25 mA; VCE = 8 V; Tamb = 25 °C.
Figure 10. Gain as a function of frequency; typical
values
Figure 11. Gain as a function of frequency; typical
values
BFU550
Product data sheet
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BFU550
NXP Semiconductors
NPN wideband silicon RF transistor
aaa-011550
30
|s21|2
(dB)
25
(1)
20
(3)
aaa-011551
(1)
30
Gp(max)
(dB)
25
(2)
(3)
(4)
20
(2)
15
(5)
(4)
15
10
(5)
10
5
5
0
0
0
5
10
15
20
25
30
35
IC (mA)
40
VCE = 8 V; Tamb = 25 °C.
1. f = 300 MHz
2. f = 433 MHz
3. f = 800 MHz
4. f = 900 MHz
5. f = 1800 MHz
VCE = 8 V; Tamb = 25 °C.
If K >1 then Gp(max) = maximum power gain. If K < 1 then
Gp(max) = MSG.
1. f = 300 MHz
2. f = 433 MHz
3. f = 800 MHz
4. f = 900 MHz
5. f = 1800 MHz
Figure 12. Insertion power gain as a function of
collector current; typical values
Figure 13. Maximum power gain as a function of
collector current; typical values
0
5
10
15
20
25
30
35
IC (mA)
40
aaa-011552
30
|s21|2
(dB)
25
aaa-011553
30
Gp(max)
(dB)
25
(1)
(2)
(3)
(1)
20
(4)
20
(2)
(3)
(5)
15
(4)
15
10
(5)
10
5
5
0
0
0
2
4
6
8
10
12
VCE (V)
14
IC = 25 mA; Tamb = 25 °C.
1. f = 300 MHz
2. f = 433 MHz
3. f = 800 MHz
4. f = 900 MHz
5. f = 1800 MHz
IC = 25 mA; Tamb = 25 °C.
If K >1 then Gp(max) = maximum power gain. If K < 1 then
Gp(max) = MSG.
1. f = 300 MHz
2. f = 433 MHz
3. f = 800 MHz
4. f = 900 MHz
5. f = 1800 MHz
Figure 14. Insertion power gain as a function of
collector-emitter voltage; typical values
Figure 15. Maximum power gain as a function of
collector-emitter voltage; typical values
0
2
BFU550
Product data sheet
4
6
8
10
12
VCE (V)
14
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BFU550
NXP Semiconductors
NPN wideband silicon RF transistor
1
0.5
2
0.2
5
10
0.0
0.2
0.5
1
2
5
10
∞
-10
-0.2
-5
(2)
(1)
-2
-0.5
-1
aaa-011554
VCE = 8 V; 40 MHz ≤ f ≤ 3 GHz.
1. IC = 15 mA
2. IC = 25 mA
Figure 16. Input reflection coefficient (s11); typical values
1
0.5
2
0.2
5
10
0.0
0.2
0.5
1
2
5
10
∞
-10
-0.2
-5
(2)
(1)
-2
-0.5
-1
aaa-011555
VCE = 8 V; 40 MHz ≤ f ≤ 3 GHz.
1. IC = 15 mA
2. IC = 25 mA
Figure 17. Output reflection coefficient (s22); typical values
BFU550
Product data sheet
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BFU550
NXP Semiconductors
NPN wideband silicon RF transistor
aaa-011556
25
IP3o
(dBm)
21
12
17
8
13
4
(3)
(2)
9
aaa-011557
16
PL(1dB)
(dBm)
(3)
(2)
0
(1)
(1)
5
0
5
10
15
20
25
30
35
IC (mA)
40
-4
0
5
10
15
20
25
30
35
IC (mA)
40
VCE = 8 V; Tamb = 25 °C.
1. f1 = 433 MHz; f2 = 434 MHz
2. f1 = 900 MHz; f2 = 901 MHz
3. f1 = 1800 MHz; f2 = 1801 MHz
VCE = 8 V; Tamb = 25 °C.
1. f = 433 MHz
2. f = 900 MHz
3. f = 1800 MHz
Figure 18. Output third-order intercept point as a
function of collector current; typical values
Figure 19. Output power at 1 dB gain compression as a
function of collector current; typical values
aaa-011558
26
IP3o
(dBm)
24
aaa-011559
14
PL(1dB)
(dBm)
12
(1)
(2)
22
10
(1)
(2)
20
(3)
8
18
16
(3)
0
2
4
6
8
10
12
VCE (V)
14
6
0
2
4
6
8
10
12
VCE (V)
14
IC = 25 mA; Tamb = 25 °C.
1. f1 = 433 MHz; f2 = 434 MHz
2. f1 = 900 MHz; f2 = 901 MHz
3. f1 = 1800 MHz; f2 = 1801 MHz
IC = 25 mA; Tamb = 25 °C.
1. f = 433 MHz
2. f = 900 MHz
3. f = 1800 MHz
Figure 20. Output third-order intercept point as a
function of collector-emitter voltage; typical values
Figure 21. Output power at 1 dB gain compression as a
function of collector-emitter voltage; typical values
BFU550
Product data sheet
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BFU550
NXP Semiconductors
NPN wideband silicon RF transistor
aaa-011561
1.6
NFmin
(dB)
(8)
1.2
(7)
aaa-011560
1.6
NFmin
(dB)
(6)
0.8
(4)
(5)
(3)
(2)
1.2
(1)
(3)
0.8
0.4
(2)
0
(1)
0.4
0
500
1000
1500
2000
f (MHz)
2500
VCE = 8 V; Tamb = 25 °C; ΓS = Γopt.
1. f = 433 MHz
2. f = 900 MHz
3. f = 1800 MHz
VCE = 8 V; Tamb = 25 °C; ΓS = Γopt.
1. IC = 1 mA
2. IC = 2 mA
3. IC = 3 mA
4. IC = 5 mA
5. IC = 10 mA
6. IC = 15 mA
7. IC = 25 mA
8. IC = 35 mA
Figure 22. Minimum noise figure as a function of
collector current; typical values
Figure 23. Minimum noise figure as a function of
frequency; typical values
0
10-1
BFU550
Product data sheet
1
10
IC (mA)
102
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NPN wideband silicon RF transistor
1
0.5
0.2
0.0
2
(1)
0.2
5
(2)
(3)
(4)
0.5
(8)
10
(6)
(5)
1
2
5
10
∞
-10
(7)
-5
-0.2
-2
-0.5
-1
aaa-011562
VCE = 8 V; 400 MHz ≤ f ≤ 2 GHz.
1. IC = 1 mA
2. IC = 2 mA
3. IC = 3 mA
4. IC = 5 mA
5. IC = 10 mA
6. IC = 15 mA
7. IC = 25 mA
8. IC = 35 mA
Figure 24. Optimum reflection coefficient (Γopt); typical values
BFU550
Product data sheet
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10 Application information
More information about the following application example can be found in the application
notes. See Section 5 "Design support".
The following application example can be implemented using the evaluation kit. See
Section 3 "Ordering information" for the order type number.
The following application example can be simulated using the simulation package. See
Section 5 "Design support".
10.1 Application example: 433 ISM band LNA
433 ISM band LNA, optimized for low noise.
More detailed information of the application example can be found in the application note:
AN11431.
VCC 3.6 V
1 µF
220 pF
22 Ω
10 nF
220 pF
12 nH
Murata
LQW series
10 kΩ
5.6 Ω
56 pF
RF output
(SMA)
15 pF
RF input
(SMA)
DUT
15 nH
Murata
LQW series
4.7 pF
aaa-010449
Figure 25. Schematic 433 MHz ISM band LNA
Remark: fine tuning of components maybe required depending on PCB parasitics.
Table 10. Application performance data at 433 MHz
ICC = 20 mA; VCC = 3.6 V
Symbol
2
BFU550
Product data sheet
Parameter
Conditions
Min Typ
Max Unit
|s21|
insertion power gain
-
21
-
dB
NF
noise figure
-
1.3
-
dB
IP3o
output third-order
intercept point
-
19
-
dBm
f1 = 433.1 MHz; f2 = 433.2 MHz;
Pi = -30 dBm per carrier
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NPN wideband silicon RF transistor
10.2 Application example: 866 ISM band LNA
866 ISM band LNA, optimized for low noise.
More detailed information of the application example can be found in the application note:
AN11432.
VCC 3.6 V
5.6 nF
220 pF
22 Ω
3.9 nF
220 pF
10 kΩ
10 Ω
8.2 nH
Murata
LQW series
8.2 pF
47 pF
RF input
(SMA)
RF output
(SMA)
82 pF
DUT
10 nH
Murata
LQW series
1.5 pF
aaa-010454
Figure 26. Schematic 866 MHz ISM band LNA
Remark: fine tuning of components maybe required depending on PCB parasitics.
Table 11. Application performance data at 866 MHz
ICC = 20 mA; VCC = 3.6 V
Symbol
2
BFU550
Product data sheet
Parameter
Conditions
Min Typ
Max Unit
|s21|
insertion power gain
-
15
-
dB
NF
noise figure
-
1.4
-
dB
IP3o
output third-order
intercept point
-
19
-
dBm
f1 = 866.1 MHz; f2 = 866.2 MHz;
Pi = -30 dBm per carrier
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NPN wideband silicon RF transistor
11 Package outline
Plastic surface-mounted package; 4 leads
SOT143B
D
B
E
A
X
y
HE
v M A
e
bp
w M B
4
3
Q
A
A1
1
c
2
Lp
b1
e1
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
b1
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.1
0.9
0.1
0.48
0.38
0.88
0.78
0.15
0.09
3.0
2.8
1.4
1.2
1.9
1.7
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
04-11-16
06-03-16
SOT143B
Figure 27. Package outline SOT143B
BFU550
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12 Handling information
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe
precautions for handling electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5,
JESD625-A or equivalent standards.
13 Abbreviations
Table 12. Abbreviations
Acronym
Description
AEC
automotive electronics council
ISM
industrial, scientific, and medical
LNA
low-noise amplifier
MSG
maximum stable gain
NPN
negative-positive-negative
SMA
SubMiniature version A
14 Revision history
Table 13. Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BFU550 v.2.1
20190417
Product data sheet
-
BFU550 v.2
modification
• Extended the description on the changes in Schematic 866 MHz ISM band LNA: Biasing on
the schematic is adapted according to the EVB to do the RF/DC. Connection of 10 K resistor
moved to the other side of the 82 pF capacitor
BFU550 v.2
20190408
modification
• Adapted Schematic 866 MHz ISM band LNA.
BFU550 v.1
20140305
BFU550
Product data sheet
Product data sheet
Product data sheet
-
BFU550 v.1
-
-
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15 Legal information
15.1 Data sheet status
Document status
[1][2]
Product status
[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple
devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
15.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences
of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local NXP
Semiconductors sales office. In case of any inconsistency or conflict with the
short data sheet, the full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product
is deemed to offer functions and qualities beyond those described in the
Product data sheet.
15.3 Disclaimers
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, NXP Semiconductors does not
give any representations or warranties, expressed or implied, as to the
accuracy or completeness of such information and shall have no liability
for the consequences of use of such information. NXP Semiconductors
takes no responsibility for the content in this document if provided by an
information source outside of NXP Semiconductors. In no event shall NXP
Semiconductors be liable for any indirect, incidental, punitive, special or
consequential damages (including - without limitation - lost profits, lost
savings, business interruption, costs related to the removal or replacement
of any products or rework charges) whether or not such damages are based
on tort (including negligence), warranty, breach of contract or any other
legal theory. Notwithstanding any damages that customer might incur for
any reason whatsoever, NXP Semiconductors’ aggregate and cumulative
liability towards customer for the products described herein shall be limited
in accordance with the Terms and conditions of commercial sale of NXP
Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
BFU550
Product data sheet
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes
no representation or warranty that such applications will be suitable
for the specified use without further testing or modification. Customers
are responsible for the design and operation of their applications and
products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications
and products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with
their applications and products. NXP Semiconductors does not accept any
liability related to any default, damage, costs or problem which is based
on any weakness or default in the customer’s applications or products, or
the application or use by customer’s third party customer(s). Customer is
responsible for doing all necessary testing for the customer’s applications
and products using NXP Semiconductors products in order to avoid a
default of the applications and the products or of the application or use by
customer’s third party customer(s). NXP does not accept any liability in this
respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or
the grant, conveyance or implication of any license under any copyrights,
patents or other industrial or intellectual property rights.
Suitability for use in automotive applications — This NXP
Semiconductors product has been qualified for use in automotive
applications. Unless otherwise agreed in writing, the product is not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
All information provided in this document is subject to legal disclaimers.
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NPN wideband silicon RF transistor
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer's own
risk.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
15.4 Trademarks
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
BFU550
Product data sheet
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
All information provided in this document is subject to legal disclaimers.
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Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
9.1
10
10.1
10.2
11
12
13
14
15
Product profile .................................................... 1
General description ............................................1
Features and benefits ........................................1
Applications ........................................................1
Quick reference data ......................................... 1
Pinning information ............................................ 2
Ordering information .......................................... 2
Marking .................................................................2
Design support ....................................................3
Limiting values .................................................... 3
Recommended operating conditions ................ 3
Thermal characteristics ......................................4
Characteristics .................................................... 4
Graphs ............................................................... 7
Application information .................................... 15
Application example: 433 ISM band LNA ........ 15
Application example: 866 ISM band LNA ........ 16
Package outline .................................................17
Handling information ........................................ 18
Abbreviations .................................................... 18
Revision history ................................................ 18
Legal information .............................................. 19
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section 'Legal information'.
© NXP B.V. 2019.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 17 April 2019
Document identifier: BFU550