NXP MRFX600H 600 W CW over 1.8-400 MHz, 65 V Wideband RF Power LDMOS Transistor Data Sheet

NXP MRFX600H 600 W CW over 1.8-400 MHz, 65 V Wideband RF Power LDMOS Transistor Data Sheet
NXP Semiconductors
Technical Data
Document Number: MRFX600H
Rev. 0, 09/2018
RF Power LDMOS Transistors
High Ruggedness N--Channel
Enhancement--Mode Lateral MOSFETs
These high ruggedness devices are designed for use in high VSWR
industrial, medical, broadcast, aerospace and mobile radio applications. Their
unmatched input and output design supports frequency use from 1.8 to
400 MHz.
MRFX600H
MRFX600HS
MRFX600GS
1.8–400 MHz, 600 W CW, 65 V
WIDEBAND
RF POWER LDMOS TRANSISTORS
Typical Performance
Frequency
(MHz)
Signal Type
VDD
(V)
Pout
(W)
Gps
(dB)
D
(%)
87.5–108 (1,2)
CW
62
680 CW
21.3
83.0
230 (3)
Pulse
(100 sec, 20% Duty Cycle)
65
600 Peak
26.4
74.4
NI--780H--4L
MRFX600H
Load Mismatch/Ruggedness
Frequency
(MHz)
230 (3)
Signal Type
VSWR
Pulse
(100 sec, 20%
Duty Cycle)
> 65:1 at all
Phase Angles
Pin
(W)
Test
Voltage
2.5 Peak
(3 dB
Overdrive)
65
Result
1. Measured in 87.5–108 MHz broadband reference circuit (page 5).
2. The values shown are the center band performance numbers across the indicated
frequency range.
3. Measured in 230 MHz production test fixture (page 10).
Features
 Unmatched input and output allowing wide frequency range utilization
 Output impedance fits a 4:1 transformer
 Device can be used single--ended or in a push--pull configuration
 Qualified up to a maximum of 65 VDD operation
 Characterized from 30 to 65 V for extended power range
 High breakdown voltage for enhanced reliability
 Suitable for linear application with appropriate biasing
 Integrated ESD protection with greater negative gate--source voltage range
for improved Class C operation
 Included in NXP product longevity program with assured supply for a
minimum of 15 years after launch
Typical Applications
 Industrial, scientific, medical (ISM)
– Laser generation
– Plasma generation
– Particle accelerators
– MRI, RF ablation and skin treatment
– Industrial heating, welding and drying systems
 Radio and VHF TV broadcast
 Aerospace
– HF communications
– Radar
 Mobile radio
– HF and VHF communications
– PMR base stations
 2018 NXP B.V.
RF Device Data
NXP Semiconductors
NI--780S--4L
MRFX600HS
No Device
Degradation
NI--780GS--4L
MRFX600GS
Gate A 3
1 Drain A
Gate B 4
2 Drain B
(Top View)
Note: The backside of the package is the
source terminal for the transistor.
Figure 1. Pin Connections
MRFX600H MRFX600HS MRFX600GS
1
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
–0.5, +179
Vdc
Gate--Source Voltage
VGS
–6.0, +10
Vdc
Storage Temperature Range
Tstg
– 65 to +150
C
Case Operating Temperature Range
TC
–40 to +150
C
TJ
–40 to +225
C
PD
1333
6.67
W
W/C
Symbol
Value (2,3)
Unit
Thermal Resistance, Junction to Case
CW: Case Temperature 75C, 650 W CW, 62 Vdc, IDQ(A+B) = 250 mA, 98 MHz
RJC
0.15
C/W
Thermal Impedance, Junction to Case
Pulse: Case Temperature 73C, 600 W Peak, 100 sec Pulse Width, 20% Duty Cycle,
65 Vdc, IDQ(A+B) = 100 mA, 230 MHz
ZJC
0.037
C/W
Operating Junction Temperature Range
(1,2)
Total Device Dissipation @ TC = 25C
Derate above 25C
Table 2. Thermal Characteristics
Characteristic
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JS--001--2017)
Class 2, passes 2500 V
Charge Device Model (per JS--002--2014)
Class C3, passes 1000 V
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
IGSS
—
—
1
Adc
V(BR)DSS
179
193
—
Vdc
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
Adc
Zero Gate Voltage Drain Leakage Current
(VDS = 179 Vdc, VGS = 0 Vdc)
IDSS
—
—
100
Adc
Gate Threshold Voltage (4)
(VDS = 10 Vdc, ID = 277 Adc)
VGS(th)
2.1
2.5
2.9
Vdc
Gate Quiescent Voltage
(VDD = 65 Vdc, ID = 100 mAdc, Measured in Functional Test)
VGS(Q)
2.7
2.9
3.2
Vdc
Drain--Source On--Voltage (4)
(VGS = 10 Vdc, ID = 0.74 Adc)
VDS(on)
—
0.2
—
Vdc
gfs
—
33.6
—
S
Off Characteristics
(4)
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
Drain--Source Breakdown Voltage
(VGS = 0 Vdc, ID = 100 mAdc)
On Characteristics
Forward Transconductance (4)
(VDS = 10 Vdc, ID = 32 Adc)
1.
2.
3.
4.
Continuous use at maximum temperature will affect MTTF.
MTTF calculator available at http://www.nxp.com/RF/calculators.
Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.
Each side of device measured separately.
(continued)
MRFX600H MRFX600HS MRFX600GS
2
RF Device Data
NXP Semiconductors
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Transfer Capacitance
(VDS = 65 Vdc  30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
1.1
—
pF
Output Capacitance
(VDS = 65 Vdc  30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
84
—
pF
Input Capacitance
(VDS = 65 Vdc, VGS = 0 Vdc  30 mV(rms)ac @ 1 MHz)
Ciss
—
299
—
pF
Dynamic Characteristics (1)
Functional Tests (2) (In NXP Production Test Fixture, 50 ohm system) VDD = 65 Vdc, IDQ(A+B) = 100 mA, Pout = 600 W Peak
(120 W Avg.), f = 230 MHz, 100 sec Pulse Width, 20% Duty Cycle
Power Gain
Gps
24.5
26.4
27.5
dB
Drain Efficiency
D
71.0
74.4
—
%
Input Return Loss
IRL
—
–23
–12
dB
Table 5. Load Mismatch/Ruggedness (In NXP Production Test Fixture, 50 ohm system) IDQ(A+B) = 100 mA
Frequency
(MHz)
230
Signal Type
VSWR
Pin
(W)
Pulse
(100 sec, 20% Duty Cycle)
> 65:1 at all
Phase Angles
2.5 Peak
(3 dB Overdrive)
Test Voltage, VDD
Result
65
No Device Degradation
Table 6. Ordering Information
Device
MRFX600HR5
MRFX600HSR5
MRFX600GSR5
Tape and Reel Information
R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel
R5 Suffix = 50 Units, 32 mm Tape Width, 13--inch Reel
Package
NI--780H--4L
NI--780S--4L
NI--780GS--4L
1. Each side of device measured separately.
2. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull wing
(GS) parts.
MRFX600H MRFX600HS MRFX600GS
RF Device Data
NXP Semiconductors
3
TYPICAL CHARACTERISTICS
1000
1.08
Measured with 30 mV(rms)ac @ 1 MHz
VGS = 0 Vdc
C
1.06
NORMALIZED VGS(Q)
C, CAPACITANCE (pF)
iss
Coss
100
10
IDQ(A+B) = 100 mA
VDD = 65 Vdc
250 mA
1.04
1.02
1
750 mA
1500 mA
0.98
0.96
0.94
Crss
1
0
10
20
30
40
50
60
70
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Note: Each side of device measured separately.
Figure 2. Capacitance versus Drain--Source Voltage
0.92
–50
–25
0
25
50
75
100
TC, CASE TEMPERATURE (C)
IDQ (mA)
Slope (mV/C)
100
–3.20
250
–2.48
750
–2.16
1500
–1.36
Figure 3. Normalized VGS versus Quiescent
Current and Case Temperature
MRFX600H MRFX600HS MRFX600GS
4
RF Device Data
NXP Semiconductors
87.5–108 MHz BROADBAND REFERENCE CIRCUIT – 2.9  4.7 (7.3 cm  12.0 cm)
Table 7. 87.5–108 MHz Broadband Performance (In NXP Reference Circuit, 50 ohm system)
IDQ(A+B) = 250 mA, Pin = 5 W, CW
Frequency
(MHz)
VDD
(V)
Pout
(W)
Gps
(dB)
D
(%)
87.5
62
705
21.5
80.0
98
62
680
21.3
83.0
108
62
650
21.2
82.5
MRFX600H MRFX600HS MRFX600GS
RF Device Data
NXP Semiconductors
5
87.5–108 MHz BROADBAND REFERENCE CIRCUIT — 2.9  4.7 (7.3 cm  12 cm)
C16
C18
D111952
C17
C3
B1
C7
C19
C20
C21
C5
Coax1
R2
Coax3
C2
C9
R1
L2
C11
C12
L1
Q1
C13
L4
T1
C15
L3
C14
C10
C1
R3
C6
Coax2
C4
C8
Rev. 0
aaa-031570
Figure 4. MRFX600H 87.5–108 MHz Broadband Reference Circuit Component Layout
Table 8. MRFX600H 87.5–108 MHz Broadband Reference Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1
Long Ferrite Bead
2743021447
Fair-Rite
C1
30 pF Chip Capacitor
ATC100B300JT500XT
ATC
C2, C5, C6, C9, C10, C11, C12,
C13, C14
1000 pF Chip Capacitor
ATC100B102JT50XT
ATC
C3, C4
10,000 pF Chip Capacitor
ATC200B103KT50XT
ATC
C7, C8
470 pF Chip Capacitor
ATC100B471JT200XT
ATC
C15
1.0 pF Chip Capacitor
ATC100B1R0BT500XT
ATC
C16
470 F, 63 V Electrolytic Capacitor
MCGPR63V477M13X26
Multicomp
C17, C18
10 F Chip Capacitor
C5750X7S2A106M
TDK
C19
470 nF Chip Capacitor
GRM31MR72A474KA35L
Murata
C20
47 nF Chip Capacitor
GRM31MR72A473KA01L
Murata
C21
15 nF Chip Capacitor
C3225CH2A153JT
TDK
Coax1,2
35  Flex Cable, 4.5 Shield Length
HSF-141C-35
Hongsen Cable
Coax3
50  Flex Cable, 6.3 Shield Length
SM141
Huber + Suhner
L1
100 nH Inductor
1812SMS-R10JLC
Coilcraft
L2, L3
8.0 nH, 3 Turn Inductor
A03TJLC
Coilcraft
L4
5 Turn, #16 AWG, ID = 0.315 Inductor
Handwound
NXP
Q1
RF Power LDMOS Transistor
MRFX600H
NXP
R1
10 , 1/4 W Chip Resistor
CRCW120610R0JNEA
Vishay
R2, R3
33 , 2 W Chip Resistor
352133RFT
TE Connectivity
T1
2–300 MHz, 3 Turns, 9:1 Impedance Ratio
Transformer
TUI-LF-9
Communication
Concepts
PCB
Rogers RO4350B, 0.030, r = 3.66
D111952
MTL
MRFX600H MRFX600HS MRFX600GS
6
RF Device Data
NXP Semiconductors
TYPICAL CHARACTERISTICS – 87.5–108 MHz
BROADBAND REFERENCE CIRCUIT
25
24
85
80
Gps
22
75
70
21
800
20
Pout
19
700
600
18
17
VDD = 62 Vdc, Pin = 5 W, lDQ(A+B) = 250 mA
16
87
89
93
91
95
97
99
500
Pout, OUTPUT
POWER (WATTS)
Gps, POWER GAIN (dB)
23
D, DRAIN
EFFICIENCY (%)
90
D
400
107 109
101 103 105
f, FREQUENCY (MHz)
Figure 5. Power Gain, Drain Efficiency and CW Output Power
versus Frequency at a Constant Input Power
Pout, OUTPUT POWER (WATTS)
800
VDD = 62 Vdc, IDQ(A+B) = 250 mA
f = 87.5 MHz
700
98 MHz
108 MHz
600
500
400
300
0
1
2
3
4
5
6
7
Pin, INPUT POWER (WATTS)
Figure 6. CW Output Power versus Input Power and Frequency
29
100
VDD = 62 Vdc, lDQ(A+B) = 250 mA
95
f = 87.5 MHz
Gps, POWER GAIN (dB)
28
90
27
85
26
80
25
108 MHz
D
98 MHz
24
23
Gps
98 MHz
22
108 MHz
87.5 MHz
21
20
300
350
400
75
70
65
60
D, DRAIN EFFICIENCY (%)
30
55
450
500
550
600
650
700
750
50
800
Pout, OUTPUT POWER (WATTS)
Figure 7. Power Gain and Drain Efficiency versus
CW Output Power and Frequency
MRFX600H MRFX600HS MRFX600GS
RF Device Data
NXP Semiconductors
7
87.5–108 MHz BROADBAND REFERENCE CIRCUIT
f
MHz
Zsource

Zload

87.5
5.46 + j12.00
11.09 + j8.82
98
6.45 + j11.40
11.51 + j8.88
108
5.57 + j11.13
11.84 + j9.06
Zsource = Test circuit impedance as measured from
gate to gate, balanced configuration.
Zload
50 
= Test circuit impedance as measured
from drain to drain, balanced configuration.
Input
Matching
Network
+
Device
Under
Test
--
-Z
source
Output
Matching
Network
50 
+
Z
load
Figure 8. Broadband Series Equivalent Source and Load Impedance – 87.5–108 MHz
MRFX600H MRFX600HS MRFX600GS
8
RF Device Data
NXP Semiconductors
HARMONIC MEASUREMENTS — 87.5–108 MHz
BROADBAND REFERENCE CIRCUIT
Fundamental (F1)
H3
F1
H2
H3
H4
87.5 MHz
175 MHz –27 dB
262.5 MHz –15 dB
350 MHz –33 dB
Amplitude (10 dB per Division)
H2
H4
Center: 228.5 MHz
35 MHz
H3
H4
H2
(175 MHz) (262.5 MHz) (350 MHz)
–27 dB
–15 dB
–33 dB
Span: 350 MHz
Figure 9. 87.5 MHz Harmonics @ 675 W CW
MRFX600H MRFX600HS MRFX600GS
RF Device Data
NXP Semiconductors
9
230 MHz PRODUCTION TEST FIXTURE — 4.0  6.0 (10.2 cm  12.7 cm)
C12
C11
C13
C10
C22
C23
R1
Coax1
Coax3
L3
C2 C4
L1
C16*
C17*
C14
C5
C1
C24
C21
L2
C3
C20
C15
C18*
C19*
C29
cut out
area
L4
Coax2
Coax4
R2
D105133
C6
C9
C7
C25
C26
C27
C28
MRFX600H
Rev. 0
C8
aaa-031625
*C16, C17, C18 and C19 are mounted vertically.
Figure 10. MRFX600H Production Test Fixture Component Layout — 230 MHz
Table 9. MRFX600H Production Test Fixture Component Designations and Values — 230 MHz
Part
Description
Part Number
Manufacturer
C1
13 pF Chip Capacitor
ATC100B130JT500XT
ATC
C2, C3
27 pF Chip Capacitor
ATC100B270JT500XT
ATC
C4
0.8–8.0 pF Variable Capacitor
27291SL
Johanson
Components
C5
33 pF Chip Capacitor
ATC100B330JT500XT
ATC
C6, C10
22 F, 35 V Tantalum Capacitor
T491X226K035AT
Kemet
C7, C11
0.1 F Chip Capacitor
CDR33BX104AKWS
AVX
C8, C12
220 nF Chip Capacitor
C1812C224K5RACTU
Kemet
C9, C13, C21, C25
1000 pF Chip Capacitor
ATC100B102JT50XT
ATC
C14, C29
39 pF Chip Capacitor
ATC100B390JT500XT
ATC
C15
43 pF Chip Capacitor
ATC100B430JT500XT
ATC
C16, C17, C18, C19
240 pF Chip Capacitor
ATC100B241JT200XT
ATC
C20
9.1 pF Chip Capacitor
ATC100B9R1BT500XT
ATC
C22, C23, C24, C26, C27, C28
470 F, 100 V Electrolytic Capacitor
MCGPR100V477M16X32
Multicomp
Coax1, 2, 3, 4
25  Semi-rigid Coax, 2.2 Shield Length
UT-141C-25
Micro-Coax
L1, L2
5 nH Inductor
A02TKLC
Coilcraft
L3, L4
6.6 nH Inductor
GA3093-ALC
Coilcraft
R1, R2
10 , 1/4 W Chip Resistor
CRCW120610R0JNEA
Vishay
PCB
Rogers AD255C, 0.030, r = 2.55, 1 oz. Copper D105133
MTL
MRFX600H MRFX600HS MRFX600GS
10
RF Device Data
NXP Semiconductors
TYPICAL CHARACTERISTICS — 230 MHz, TC = 25_C
PRODUCTION TEST FIXTURE
Pout, OUTPUT POWER (WATTS) PEAK
700
VDD = 65 Vdc, f = 230 MHz
Pulse Width = 100 sec, 20% Duty Cycle
600
500
Pin = 1.4 W
400
300
Pin = 0.7 W
200
100
0
0
0.5
1.5
1.0
2.0
2.5
3.0
3.5
VGS, GATE--SOURCE VOLTAGE (VOLTS)
Figure 11. Output Power versus Gate--Source
Voltage at a Constant Input Power
56
28
52
48
44
40
36
18
21
24
27
30
33
26
22
100 mA
20
70
Gps
300 mA
24
60
50
200 mA
D
40
30
18
16
12
36
80
IDQ(A+B) = 400 mA
300 mA
14
15
90
VDD = 65 Vdc, f = 230 MHz, Pulse Width = 100 sec, 20% Duty Cycle
400 mA
20
10
200 mA
100 mA
10
0
1000
100
Pin, INPUT POWER (dBm) PEAK
D, DRAIN EFFICIENCY (%)
30
VDD = 65 Vdc, IDQ(A+B) = 100 mA, f = 230 MHz
Pulse Width = 100 sec, 20% Duty Cycle
Gps, POWER GAIN (dB)
Pout, OUTPUT POWER (dBm) PEAK
60
Pout, OUTPUT POWER (WATTS) PEAK
f
(MHz)
P1dB
(W)
P3dB
(W)
230
610
677
Figure 13. Power Gain and Drain Efficiency
versus Output Power and Quiescent Current
Figure 12. Output Power versus Input Power
–40_C
25_C
28
85_C
26
30
70
28
60
50
Gps
24
22
TC = –40_C
40
D
25_C
20
1
30
20
85_C
18
16
80
10
10
100
0
1000
Gps, POWER GAIN (dB)
Gps, POWER GAIN (dB)
VDD = 65 Vdc, IDQ(A+B) = 100 mA, f = 230 MHz
30 Pulse Width = 100 sec, 20% Duty Cycle
D, DRAIN EFFICIENCY (%)
32
26
24
22
20
50 V
18
60 V
65 V
40 V
16
14
55 V
IDQ(A+B) = 100 mA, f = 230 MHz
Pulse Width = 100 sec, 20% Duty Cycle
VDD = 30 V
0
100
200
300
400
500
600
700
Pout, OUTPUT POWER (WATTS) PEAK
Pout, OUTPUT POWER (WATTS) PEAK
Figure 14. Power Gain and Drain Efficiency
versus Output Power
Figure 15. Power Gain versus Output Power
and Drain--Source Voltage
800
MRFX600H MRFX600HS MRFX600GS
RF Device Data
NXP Semiconductors
11
230 MHz PRODUCTION TEST FIXTURE
f
MHz
Zsource

Zload

230
1.5 + j4.9
5.0 + j7.1
Zsource = Test fixture impedance as measured from
gate to gate, balanced configuration.
Zload
50 
Input
Matching
Network
= Test fixture impedance as measured from
drain to drain, balanced configuration.
+
-Zsource
Device
Under
Test
--
Output
Matching
Network
50 
+
Zload
Figure 16. Series Equivalent Source and Load Impedance – 230 MHz
MRFX600H MRFX600HS MRFX600GS
12
RF Device Data
NXP Semiconductors
PACKAGE DIMENSIONS
MRFX600H MRFX600HS MRFX600GS
RF Device Data
NXP Semiconductors
13
MRFX600H MRFX600HS MRFX600GS
14
RF Device Data
NXP Semiconductors
MRFX600H MRFX600HS MRFX600GS
RF Device Data
NXP Semiconductors
15
MRFX600H MRFX600HS MRFX600GS
16
RF Device Data
NXP Semiconductors
MRFX600H MRFX600HS MRFX600GS
RF Device Data
NXP Semiconductors
17
MRFX600H MRFX600HS MRFX600GS
18
RF Device Data
NXP Semiconductors
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following resources to aid your design process.
Application Notes
 AN1908: Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages
 AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
 EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
 Electromigration MTTF Calculator
 RF High Power Model
 .s2p File
Development Tools
 Printed Circuit Boards
To Download Resources Specific to a Given Part Number:
1. Go to http://www.nxp.com/RF
2. Search by part number
3. Click part number link
4. Choose the desired resource from the drop down menu
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
0
Sept. 2018
Description
 Initial release of data sheet
MRFX600H MRFX600HS MRFX600GS
RF Device Data
NXP Semiconductors
19
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customer’s technical experts. NXP does not convey any license under its patent rights
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sale, which can be found at the following address: nxp.com/SalesTermsandConditions.
NXP and the NXP logo are trademarks of NXP B.V. All other product or service names
are the property of their respective owners.
E 2018 NXP B.V.
MRFX600H MRFX600HS MRFX600GS
Document Number: MRFX600H
Rev. 0, 09/2018
20
RF Device Data
NXP Semiconductors
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