NXP A2T18H450W19S 1805-1880 MHz, 89 W Avg., 30 V Airfast® RF Power LDMOS Transistor Data Sheet

Freescale Semiconductor
Technical Data
Document Number: A2T18H450W19S
Rev. 0, 9/2016
RF Power LDMOS Transistor
N--Channel Enhancement--Mode Lateral MOSFET
A2T18H450W19SR6
This 89 W asymmetrical Doherty RF power LDMOS transistor is designed for
cellular base station applications requiring very wide instantaneous bandwidth
capability covering the frequency range of 1805 to 1880 MHz.
1800 MHz
 Typical Doherty Single--Carrier W--CDMA Performance: VDD = 30 Vdc,
IDQA = 800 mA, VGSB = 0.9 Vdc, Pout = 89 W Avg., Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency
Gps
(dB)
D
(%)
Output PAR
(dB)
1805 MHz
16.6
47.1
7.9
–31.4
1840 MHz
16.7
47.5
8.0
–32.9
1880 MHz
16.5
47.7
7.9
–38.8
1805–1880 MHz, 89 W AVG., 30 V
AIRFAST RF POWER LDMOS
TRANSISTOR
ACPR
(dBc)
Features
 Advanced High Performance In--Package Doherty
 Designed for Wide Instantaneous Bandwidth Applications
 Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
 Able to Withstand Extremely High Output VSWR and Broadband Operating
Conditions
 Designed for Digital Predistortion Error Correction Systems
NI--1230S--4S4S
VBWAG(2) 1
8 VBWAD(2)
Carrier
7 RFoutA/VDSA
RFinA/VGSA 2
(1)
RFinB/VGSB 3
6 RFoutB/VDSB
Peaking
VBWBG(2) 4
5 VBWBD(2)
(Top View)
Figure 1. Pin Connections
1. Pin connections 6 and 7 are DC coupled
and RF independent.
2. Device cannot operate with the VDD current
supplied through pins 1, 4, 5, and 8.
 Freescale Semiconductor, Inc., 2016. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
A2T18H450W19SR6
1
Table 1. Maximum Ratings
Symbol
Value
Unit
Drain--Source Voltage
Rating
VDSS
–0.5, +65
Vdc
Gate--Source Voltage
VGS
–6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
–65 to +150
C
Case Operating Temperature Range
TC
–40 to +125
C
TJ
–40 to +225
C
Operating Junction Temperature Range
(1,2)
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 73C, 89 W Avg., W--CDMA, 30 Vdc, IDQA = 800 mA, VGSB = 0.9 Vdc,
1840 MHz
Symbol
Value (2,3)
Unit
RJC
0.27
C/W
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2
Machine Model (per EIA/JESD22--A115)
B
Charge Device Model (per JESD22--C101)
IV
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
Adc
Zero Gate Voltage Drain Leakage Current
(VDS = 32 Vdc, VGS = 0 Vdc)
IDSS
—
—
5
Adc
Gate--Source Leakage Current (4)
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
Adc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 200 Adc)
VGS(th)
0.8
1.2
1.6
Vdc
Gate Quiescent Voltage
(VDD = 30 Vdc, IDA = 800 mAdc, Measured in Functional Test)
VGSA(Q)
1.6
1.8
1.9
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 2.0 Adc)
VDS(on)
0.05
0.15
0.3
Vdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 360 Adc)
VGS(th)
0.8
1.2
1.6
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 3.6 Adc)
VDS(on)
0.05
0.15
0.3
Vdc
Characteristic
Off Characteristics
On Characteristics -- Side A, Carrier
On Characteristics -- Side B, Peaking
1.
2.
3.
4.
Continuous use at maximum temperature will affect MTTF.
MTTF calculator available at http://www.nxp.com/RF/calculators.
Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.
Each side of device measured separately.
(continued)
A2T18H450W19SR6
2
RF Device Data
Freescale Semiconductor, Inc.
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests -- 1805 MHz (1,2,3) (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 30 Vdc, IDQA = 800 mA, VGSB = 0.9 Vdc,
Pout = 89 W Avg., f = 1805 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset.
Power Gain
Gps
15.5
16.6
18.5
dB
Drain Efficiency
D
45.0
47.1
—
%
PAR
7.5
7.9
—
dB
ACPR
—
–31.4
–30.0
dBc
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Functional Tests -- 1880 MHz (1,2,3) (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 30 Vdc, IDQA = 800 mA, VGSB = 0.9 Vdc,
Pout = 89 W Avg., f = 1880 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset.
Power Gain
Drain Efficiency
15.5
16.5
18.5
dB
D
45.0
47.7
—
%
PAR
7.5
7.9
—
dB
ACPR
—
–33.8
–30.0
dBc
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Gps
Load Mismatch (3) (In Freescale Doherty Test Fixture, 50 ohm system) IDQA = 800 mA, VGSB = 0.9 Vdc, f = 1840 MHz, 12 sec(on),
10% Duty Cycle
VSWR 10:1 at 32 Vdc, 420 W Pulsed CW Output Power
(3 dB Input Overdrive from 250 W Pulsed CW Rated Power)
No Device Degradation
Typical Performance (3) (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 30 Vdc, IDQA = 800 mA, VGSB = 0.9 Vdc,
1805–1880 MHz Bandwidth
Pout @ 1 dB Compression Point, CW
P1dB
—
199
—
W
(4)
P3dB
—
550
—
W
AM/PM
(Maximum value measured at the P3dB compression point across
the 1805–1880 MHz frequency range)

—
–20
—

VBWres
—
140
—
MHz
Gain Flatness in 75 MHz Bandwidth @ Pout = 89 W Avg.
GF
—
0.4
—
dB
Gain Variation over Temperature
(–30C to +85C)
G
—
0.008
—
dB/C
P1dB
—
0.027
—
dB/C
Pout @ 3 dB Compression Point
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
Output Power Variation over Temperature
(–30C to +85C)
Table 5. Ordering Information
Device
A2T18H450W19SR6
1.
2.
3.
4.
Tape and Reel Information
R6 Suffix = 150 Units, 56 mm Tape Width, 13--inch Reel
Package
NI--1230S--4S4S
VDDA and VDDB must be tied together and powered by a single DC power supply.
Part internally matched both on input and output.
Measurements made with device in an asymmetrical Doherty configuration.
P3dB = Pavg + 7.0 dB where Pavg is the average output power measured using an unclipped W--CDMA single--carrier input signal where
output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
A2T18H450W19SR6
RF Device Data
Freescale Semiconductor, Inc.
3
0
C1
VGGA
C32
C7
C18
C4
C12
Z1
A2T18H450
Rev. 1
C14
C3
R3
R2
C8*
C33*
C19
C5
C
P
C21
C28
C29
C23
C24
C34
C30
C9
C17
C25 C26
C15
VDDB
C31
C2
D60917
C27
C35
C20
CUT OUT AREA
R1
C10
C11
C22
C13 C16
C6
VDDA
VGGB
*C8 and C33 are mounted vertically.
Note: VDDA and VDDB must be tied together and powered by a single DC power supply.
Figure 2. A2T18H450W19SR6 Test Circuit Component Layout
Table 6. A2T18H450W19SR6 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C2, C31, C32
10 F Chip Capacitors
C5750X7R1H106M230KB
TDK
C3, C9, C13, C16, C17, C22,
C23, C24, C25, C26, C34, C35
22 pF Chip Capacitors
ATC600S220JT250XT
ATC
C4
0.4 pF Chip Capacitor
ATC100B0R4BT500XT
ATC
C5, C7, C18, C19, C20, C21,
C27, C30
4.7 F Chip Capacitors
C4532X7R1H475M200KB
TDK
C6
0.2 pF Chip Capacitor
ATC600S0R2BT250XT
ATC
C8
1.8 pF Chip Capacitor
ATC100B1R8BT500XT
ATC
C10
22 pF Chip Capacitor
ATC100B220GT500XT
ATC
C11, C15
470 F, 63 V Electrolytic Capacitors
MCGPR63V477M13X26--RH
Multicomp
C12
3 pF Chip Capacitor
ATC600S3R0BT250XT
ATC
C14
2.4 pF Chip Capacitor
ATC600S2R4BT250XT
ATC
C28, C29
4.7 pF Chip Capacitors
ATC600S4R7CT250XT
ATC
C33
0.2 pF Chip Capacitor
ATC100B0R2BT500XT
ATC
R1
4.7 , 1/8 W Chip Resistor
WCR0805-4R7F
Welwyn
R2
2.2 , 1/8 W Chip Resistor
WCR0805-2R2F
Welwyn
R3
50 , 10 W Chip Termination
060120A25X50-2
Anaren
Z1
1700–2000 MHz Band, 90, 5 dB Directional Coupler
X3C19P1-05S
Anaren
PCB
Rogers RO4350B, 0.020, r = 3.66
D60917
MTL
A2T18H450W19SR6
4
RF Device Data
Freescale Semiconductor, Inc.
PACKAGE DIMENSIONS
A2T18H450W19SR6
RF Device Data
Freescale Semiconductor, Inc.
5
A2T18H450W19SR6
6
RF Device Data
Freescale Semiconductor, Inc.
PRODUCT DOCUMENTATION AND TOOLS
Refer to the following resources to aid your design process.
Application Notes
 AN1908: Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages
 AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
 EB212: Using Data Sheet Impedances for RF LDMOS Devices
Development Tools
 Printed Circuit Boards
To Download Resources Specific to a Given Part Number:
1. Go to http://www.nxp.com/RF
2. Search by part number
3. Click part number link
4. Choose the desired resource from the drop down menu
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
0
Sept. 2016
Description
 Initial release of data sheet
A2T18H450W19SR6
RF Device Data
Freescale Semiconductor, Inc.
7
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E 2016 Freescale Semiconductor, Inc.
A2T18H450W19SR6
Document Number: A2T18H450W19S
Rev. 0, 9/2016
8
RF Device Data
Freescale Semiconductor, Inc.