NXP BFG424F NPN 25 GHz wideband transistor Data Sheet

NXP BFG424F NPN 25 GHz wideband transistor Data Sheet

BFG424F

NPN 25 GHz wideband transistor

Rev. 2 — 13 September 2011 Product data sheet

CAUTION 1.1 General description

NPN double polysilicon wideband transistor with buried layer for low voltage applications in a plastic, 4-pin dual-emitter SOT343F package.

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.

1.2 Features and benefits

    

Very high power gain Low noise figure High transition frequency Emitter is thermal lead Low feedback capacitance

1.3 Applications

Radio Frequency (RF) front end wideband applications such as:

analog and digital cellular telephones

cordless telephones (Cordless Telephone (CT), Personal Handy-phone System (PHS), Digital Enhanced Cordless Telecommunications (DECT), etc.)

radar detectors

pagers

Satellite Antenna TeleVison (SATV) tuners

high frequency oscillators e.g. Dielectric Resonator Oscillator (DRO) for Low Noise Block (LNB)

1.4 Quick reference data Table 1.

Symbol

V CBO V CEO I C P tot

Quick reference data Parameter

collector-base voltage collector-emitter voltage collector current total power dissipation

Conditions

open emitter open base T sp  90  C

[1]

-

Min

-

Typ

25

Max

10 4.5

30 135

Unit

V V mA mW

NXP Semiconductors BFG424F NPN 25 GHz wideband transistor Table 1.

Symbol

h FE f C T G CBS p(max) NF

Quick reference data

…continued

Parameter

DC current gain collector-base capacitance I

Conditions

C T j = 25 mA; V CE = 25  C = 2 V; V CB = 2 V; f = 1 MHz transition frequency maximum power gain noise figure I C = 25 mA; V CE = 2 V; f = 2 GHz; T amb = 25  C I C = 25 mA; V CE = 2 V; f = 2 GHz; T amb = 25  C I C = 2 mA; V CE f = 2 GHz;  S = 2 V; =  opt

[2]

-

Min

50

Typ

80 102 25 23 1.2

-

Max

120

Unit

fF GHz dB dB [1] [2] T sp is the temperature at the soldering point of the emitter pins.

G p(max) is the maximum power gain, if K > 1. If K < 1 then G p(max)

Figure 8

.

= Maximum Stable Gain (MSG), see

Table 2.

Pin

1 2 3 4

Pinning Description

emitter base emitter collector

Simplified outline Symbol

3 4 2 4 2 1 1, 3

mbb159

Table 3.

Ordering information Type number Package

BFG424F -

Name Description

plastic surface mounted flat pack package; reverse pinning; 4 leads

Version

SOT343F

4. Marking

Table 4.

Marking Type number

BFG424F [1] * = p: made in Hong Kong.

Marking code [1]

NE* BFG424F

Product data sheet

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Rev. 2 — 13 September 2011

© NXP B.V. 2011. All rights reserved.

2 of 14

NXP Semiconductors BFG424F NPN 25 GHz wideband transistor Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

V CBO V CEO V EBO I C P tot T stg T j

Parameter

collector-base voltage collector-emitter voltage emitter-base voltage collector current total power dissipation storage temperature junction temperature

Conditions

open emitter open base open collector T sp  90  C -

Min

-

[1]

 65 [1] T sp is the temperature at the soldering point of the emitter pins.

Max

10 4.5

1 30 135 +150 150

Unit

V V V mA mW  C  C

Table 6.

Symbol

R th(j-sp)

Thermal characteristics Parameter

thermal resistance from junction to solder point

Conditions

T sp  90  C [1] T sp is the temperature at the soldering point of the emitter pins.

001aad817

200 P tot (mW) 150

Typ

[1]

340

Unit

K/W 100 50 0 0

Fig 1.

Power derating curve

40 80 120 T sp ( ° C) 160 BFG424F

Product data sheet

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NXP Semiconductors BFG424F NPN 25 GHz wideband transistor

7. Characteristics

Table 7.

T j = 25

Characteristics

C; unless otherwise specified.

Symbol

V (BR)CBO

Parameter

collector-base breakdown voltage

Conditions

I C = 2.5

 A; I E = 0 mA f  I V (BR)CEO collector-emitter breakdown voltage V (BR)EBO h CBO FE C CES open-collector emitter-base breakdown voltage collector-base cut-off current DC current gain C EBS collector-emitter capacitance emitter-base capacitance C CBS T G s P p(max) 21 NF IP3  2 L(1dB) I I I I C E E C V V = 1 mA; I = 2.5

= 0 mA; V = 25 mA; V CB EB  B A; I C = 0 mA CB = 0 mA CE = 4.5 V = 2 V = 2 V; f = 1 MHz = 0.5 V; f = 1 MHz collector-base capacitance V CB = 2 V; f = 1 MHz transition frequency maximum power gain I T C = 25 mA; V CE amb = 25  C = 2 V; f = 2 GHz; I T C = 25 mA; V CE amb = 25  C = 2 V; f = 2 GHz; insertion power gain I T C = 25 mA; V CE amb = 25  C = 2 V; f = 2 GHz; noise figure output power at 1 dB gain compression I C = 2 mA; V CE = 2 V; f = 900 MHz;  S =  opt I C  S = 2 mA; V CE =  opt = 2 V; f = 2 GHz; I C Z S = 25 mA; V CE = Z S(opt) ; Z L = 2 V; f = 2 GHz; = Z L(opt) third-order intercept point I C Z S = 25 mA; V CE = Z S(opt) ; Z L = 2 V; f = 2 GHz; = Z L(opt) [1] [2]

[1]

-

[2]

-

[2]

-

Min

10 4.5

1 50 -

Typ

80 363 475 102 25 23 18.5

0.8

1.2

12 22 G p(max) is the maximum power gain, if K  1. If K  1 then G p(max) = MSG, see

Figure 8 .

Z S is optimized for noise; Z L is optimized for gain.

-

Max Unit

V 15 120 V V nA fF fF fF GHz dB dB dB dB dBm dBm BFG424F

Product data sheet

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NXP Semiconductors BFG424F NPN 25 GHz wideband transistor

001aad818

40 I C (mA) 30 20 10 0 0 1 2 3 4 V CE (V) 5 (1) I B = 400  A (2) I B = 350  A (3) I B = 300  A (4) I B = 250  A (5) I B = 200  A (6) I B = 150  A (7) I B = 100  A (8) I B = 50  A

Fig 2.

Collector current as a function of collector-emitter voltage; typical values

(1) (2) (3) (4) (5) (6) (7) (8) 200 C CBS (fF) 160 120 80 40 120 h FE 80

Fig 3.

40 0 0 (1) V CE = 3 V (2) V CE = 2 V (3) V CE = 1 V 10 20

001aad819

(1) (2) (3) 30 I C (mA) 40

DC current gain as a function of collector current; typical values

001aad820

0 0 1 2 3 4 V CB (V) 5

Fig 4.

f = 1 MHz

Collector-base capacitance as a function of collector-base voltage; typical values

BFG424F

Product data sheet

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© NXP B.V. 2011. All rights reserved.

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NXP Semiconductors

30 f T (GHz) 20 10

001aad821

30 G (dB) 20 10

BFG424F NPN 25 GHz wideband transistor

001aad822

MSG s 21 2

Fig 5.

0 1 10 10 2 I C (mA) V CE = 2 V; f = 2 GHz; T amb = 25  C

Transition frequency as a function of collector current; typical values Fig 6.

0 1 10 10 2 I C (mA) V CE = 2 V; f = 0.9 GHz; T amb = 25  C

Gain as a function of collector current; typical values

001aad823 001aad824

30 G (dB) 20 MSG G p(max) 45 G (dB) 35 MSG s 21 2 25 s 21 2 G p(max) 15 10 5

Fig 7.

0 1 10 10 2 I C (mA) V CE = 2 V; f = 2 GHz; T amb = 25  C

Gain as a function of collector current; typical values Fig 8.

− 5 10 − 1 1 10 f (GHz) 10 2 V CE = 2 V; I C = 25 mA; T amb = 25  C

Gain as a function of frequency; typical values

BFG424F

Product data sheet

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NXP Semiconductors BFG424F NPN 25 GHz wideband transistor

180 ° 0 135 ° +0.2

− 0.2

+0.5

0.2

0.5

90 ° +1 1 12 GHz +2 45 ° +5 2 100 MHz 5 10 − 5 0 ° 1.0

0.8

0.6

0.4

0.2

0

Fig 9.

− 135 ° − 0.5

− 2 − 45 ° − 1 − 90 °

001aad825

V CE = 2 V; I C = 25 mA; Z o = 50 

Common emitter input reflection coefficient (s 11 ); typical values

90 ° 1.0

135 ° 45 ° 180 ° 0.5

0.4

0.3

0.2

0.1

0 100 MHz 12 GHz 0 ° − 135 ° − 45 ° − 90 °

001aad826

V CE = 2 V; I C = 25 mA

Fig 10. Common emitter reverse transmission coefficient (s 12 ); typical values

BFG424F

Product data sheet

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Rev. 2 — 13 September 2011

© NXP B.V. 2011. All rights reserved.

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NXP Semiconductors

90 ° 135 ° 180 ° 50 100 MHz 40 30 20 10 0 12 GHz

BFG424F NPN 25 GHz wideband transistor

45 ° 0 ° − 135 ° − 45 ° − 90 °

001aad827

V CE = 2 V; I C = 25 mA

Fig 11. Common emitter forward transmission coefficient (s 21 ); typical values

180 ° 0 135 ° +0.5

+0.2

0.2

0.5

90 ° +1 12 GHz 1 2 +2 45 ° +5 5 10 100 MHz 0 ° 1.0

0.8

0.6

0.4

0.2

0 − 0.2

− 5 − 135 ° − 0.5

− 2 − 45 ° − 1 − 90 °

001aad828

V CE = 2 V; I C = 25 mA; Z o = 50 

Fig 12. Common emitter input reflection coefficient (s 22 ); typical values

1.0

BFG424F

Product data sheet

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Rev. 2 — 13 September 2011

© NXP B.V. 2011. All rights reserved.

8 of 14

NXP Semiconductors BFG424F NPN 25 GHz wideband transistor 7.1 Noise data Table 8.

Noise data

V CE = 2 V; typical values.

f (MHz) I C (mA)

900 1 2 4 10 15 2000 20 25 30 1 2 4 10 15 20 25 30 NF min (dB) 3 2 1.9

2.1

2.3

1.3

1.2

1.2

1.6

1.9

NF min (dB)

0.7

0.81

1 1.4

1.65

2.2

2.5

2.8

(1) (2) 

opt ratio

0.67

0.48

0.28

0.02

0.11

0.19

0.25

0.29

0.56

0.43

0.22

0.06

0.13

0.17

0.22

0.27

1

001aad829

(deg)

19.1

17.8

11.7

 63.9

 162.4

 165.5

 166.3

 166.5

57.5

57.2

60.8

137.4

 162.1

 155.5

 152.2

 150.8

r n (

)

0.40

0.27

0.24

0.19

0.18

0.18

0.19

0.19

0.36

0.25

0.18

0.19

0.20

0.20

0.21

0.25

0 0 10 20 I C (mA) 30 (1) f = 2 GHz (2) f = 900 MHz

Fig 13. Minimum noise figure as a function of collector current; typical values

BFG424F

Product data sheet

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Rev. 2 — 13 September 2011

© NXP B.V. 2011. All rights reserved.

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NXP Semiconductors Plastic surface-mounted flat pack package; reverse pinning; 4 leads BFG424F NPN 25 GHz wideband transistor SOT343F

D y

3

e

4

A E H E

2

w M A b p e 1 b 1

1

w M A A detail X L p c X 0 1 scale

DIMENSIONS (mm are the original dimensions) UNIT

mm

A max

0.75

0.65

b p

0.4

0.3

b 1

0.7

0.5

c

0.25

0.10

D

2.2

1.8

E

1.35

1.15

e e 1

1.3

1.15

H E

2.2

2.0

L p

0.48

0.38

w

0.2

2 mm

y

0.1

OUTLINE VERSION

SOT343F

IEC REFERENCES JEDEC JEITA Fig 14. Package outline SOT343F

BFG424F

Product data sheet

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Rev. 2 — 13 September 2011 EUROPEAN PROJECTION ISSUE DATE

05-07-12 06-03-16 © NXP B.V. 2011. All rights reserved.

10 of 14

NXP Semiconductors BFG424F NPN 25 GHz wideband transistor Table 9.

Revision history Document ID

BFG424F v.2

Modifications: BFG424F v.1

Release date Data sheet status Change notice Supersedes

20110913

Product data sheet BFG424F v.1

The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors.

Legal texts have been adapted to the new company name where appropriate.

20060321 Product data sheet BFG424F

Product data sheet

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© NXP B.V. 2011. All rights reserved.

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NXP Semiconductors BFG424F NPN 25 GHz wideband transistor

10. Legal information

Document status [1][2]

Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet

Product status

Development Qualification Production

[3] Definition

This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. [1] [2] [3] Please consult the most recently issued document before initiating or completing a design. The term ‘short data sheet’ is explained in section “Definitions”. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com

.

10.2 Definitions Draft —

The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information.

Short data sheet —

A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.

Product specification —

The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet.

10.3 Disclaimers Limited warranty and liability —

Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the

Terms and conditions of commercial sale

of NXP Semiconductors.

Right to make changes —

NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.

Suitability for use —

NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or BFG424F

Product data sheet

malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk.

Applications —

Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect.

Limiting values —

Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device.

Terms and conditions of commercial sale —

NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer.

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Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.

Export control —

This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities.

All information provided in this document is subject to legal disclaimers.

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NXP Semiconductors BFG424F NPN 25 GHz wideband transistor Quick reference data —

The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.

Non-automotive qualified products —

Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications.

In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the

11. Contact information

product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications.

10.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.

For more information, please visit:

http://www.nxp.com

For sales office addresses, please send an email to:

salesaddresses@nxp.com

BFG424F

Product data sheet

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NXP Semiconductors

12. Contents

7

7.1

8

9

10

10.1 10.2 10.3

10.4

11

12

3 4

5 6

1

1.1 1.2 1.3 1.4

2

Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1

Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . 3

Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Noise data. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10

Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11

Legal information. . . . . . . . . . . . . . . . . . . . . . . 12

Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Contact information. . . . . . . . . . . . . . . . . . . . . 13

Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

BFG424F NPN 25 GHz wideband transistor

Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’.

© NXP B.V. 2011.

All rights reserved.

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 13 September 2011 Document identifier: BFG424F

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