NXP MRF5S19060M 1990 MHz, 12 W AVG., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs Data Sheet

NXP MRF5S19060M 1990 MHz, 12 W AVG., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs Data Sheet
Freescale Semiconductor
Technical Data
Document Number: MRF5S19060M
Rev. 5, 5/2006
Replaced by MRF5S19060NR1/NBR1. There are no form, fit or function changes with
this part replacement. N suffix added to part number to indicate transition to lead - free
terminations.
MRF5S19060MR1
MRF5S19060MBR1
RF Power Field Effect Transistors
Designed for broadband commercial and industrial applications with
frequencies from 1930 to 1990 MHz. The high gain and broadband
performance of these devices make them ideal for large - signal, common source amplifier applications in 28 Volt base station equipment.
• Typical 2 - carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 750 mA,
Pout = 12 Watts Avg., Full Frequency Band. IS - 95 (Pilot, Sync, Paging,
Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR =
9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 14 dB
Drain Efficiency — 23%
IM3 @ 2.5 MHz Offset — - 37 dBc in 1.2288 MHz Channel Bandwidth
ACPR @ 885 kHz Offset — - 51 dBc in 30 kHz Channel Bandwidth
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 1990 MHz, 12 Watts Avg.
Output Power
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• 200°C Capable Plastic Package
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
1990 MHz, 12 W AVG., 28 V
2 x N - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 1486 - 03, STYLE 1
TO - 270 WB - 4
PLASTIC
MRF5S19060MR1
CASE 1484 - 04, STYLE 1
TO - 272 WB - 4
PLASTIC
MRF5S19060MBR1
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
VDSS
- 0.5, +65
Vdc
Gate - Source Voltage
VGS
- 0.5, +15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
218.8
1.25
W
W/°C
Storage Temperature Range
Tstg
- 65 to +175
°C
Operating Junction Temperature
TJ
200
°C
Symbol
Value (1)
Unit
ARCHIVE INFORMATION
ARCHIVE INFORMATION
N - Channel Enhancement - Mode Lateral MOSFETs
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 75°C, 12 W CW
RθJC
0.80
°C/W
1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF5S19060MR1 MRF5S19060MBR1
1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1C (Minimum)
Machine Model (per EIA/JESD22 - A115)
C (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Rating
Package Peak Temperature
Unit
3
260
°C
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 225 μAdc)
VGS(th)
2.5
—
3.5
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 750 mAdc)
VGS(Q)
—
3.8
—
Vdc
Drain - Source On - Voltage
(VGS = 5 Vdc, ID = 2.25 Adc)
VDS(on)
—
0.26
—
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 2.25 Adc)
gfs
—
5
—
S
Crss
—
1.5
—
pF
On Characteristics
Dynamic Characteristics (1)
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 750 mA, Pout = 12 W Avg., f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz., 2 - carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carriers. ACPR measured in
30 kHz Channel Bandwidth @ ±885 kHz Offset. IM3 measured in 1.2288 MHz Channel Bandwidth @ ±2.5 MHz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF.
Gps
12.5
Drain Efficiency
ηD
21
23
—
%
Intermodulation Distortion
IM3
—
- 37
- 35
dBc
ACPR
—
- 51
- 48
dBc
IRL
—
- 12
-9
dB
Power Gain
Adjacent Channel Power Ratio
Input Return Loss
14
16
dB
ARCHIVE INFORMATION
ARCHIVE INFORMATION
Off Characteristics
1. Part is internally matched both on input and output.
(continued)
MRF5S19060MR1 MRF5S19060MBR1
2
RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Pulse Peak Power
(VDD = 28 Vdc, 1 - Tone CW Pulsed, IDQ = 750 mA, tON = 8 μs,
1% Duty Cycle)
Psat
—
110
—
W
Video Bandwidth
(VDD = 28 Vdc, Pout = 60 W PEP, IDQ = 750 mA, Tone Spacing =
1 MHz to VBW, Δ IM3<2dB)
VBW
—
35
—
MHz
ARCHIVE INFORMATION
ARCHIVE INFORMATION
Typical RF Performance (50 ohm system)
MRF5S19060MR1 MRF5S19060MBR1
RF Device Data
Freescale Semiconductor
3
Z11
VBIAS
VSUPPLY
R1
+
R2
C1
Z6
C2
C3
+
+
+
C4
C5
C6
Z9
Z10
R3
Z1
Z2
Z3
Z4
Z5
C7
Z8
RF
OUTPUT
C12
DUT
C8
ARCHIVE INFORMATION
Z7
C9
C10
C11
Z12
C13
Z1
Z2*
Z3*
Z4*
Z5
Z6
Z7
0.250″
0.500″
0.500″
0.515″
0.480″
1.140″
0.600″
x 0.083″
x 0.083″
x 0.083″
x 0.083″
x 1.000″
x 0.080″
x 1.000″
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Z8*
Z9*
Z10
Z11
Z12
PCB
+
+
C14
C15
0.420″ x 0.083″ Microstrip
0.975″ x 0.083″ Microstrip
0.250″ x 0.083″ Microstrip
0.700″ x 0.080″ Microstrip
0.700″ x 0.080″ Microstrip
Taconic TLX8 - 0300, 0.030″, εr = 2.55
* Variable for tuning
Figure 1. MRF5S19060MR1/MBR1 Test Circuit Schematic
Table 6. MRF5S19060MR1/MBR1 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1
1 μF, 35 V Tantalum Capacitor
TAJB105K35
AVX
C2
10 pF 100B Chip Capacitor
100B10R0CW
ATC
C3, C7, C12, C13
6.8 pF 100B Chip Capacitors
100B6R8CW
ATC
C4, C5, C14, C15
10 μF, 35 V Tantalum Capacitors
TAJD106K035
AVX
C6
220 μF, 63 V Electrolytic Capacitor, Radial
13668221
Philips
C8
0.8 pF 100B Chip Capacitor
100B0R8BW
ATC
C9
1.5 pF 100B Chip Capacitor
100B1R5BW
ATC
C10
1.0 pF 100B Chip Capacitor
100B1R0BW
ATC
C11
0.2 pF 100B Chip Capacitor
100B0R2BW
ATC
R1, R2
10 kW, 1/4 W Chip Resistors (1206)
R3
10 W, 1/4 W Chip Resistors (1206)
ARCHIVE INFORMATION
RF
INPUT
MRF5S19060MR1 MRF5S19060MBR1
4
RF Device Data
Freescale Semiconductor
VDD
VGG
C3
R1
R2 C1 C2
C4 C5
R3
C9
CUT OUT AREA
C8
C10
C14
C11
C12
C15
C13
MRF5S19060M
Rev 0
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 2. MRF5S19060MR1/MBR1 Test Circuit Component Layout
ARCHIVE INFORMATION
ARCHIVE INFORMATION
C7
C6
MRF5S19060MR1 MRF5S19060MBR1
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS
24
14.2
Gps
−35
IM3
IRL
14
22
−41
−47
13.8
13.6
1900
1920
1940
1960
1980
−53
2020
2000
−10
−15
−20
f, FREQUENCY (MHz)
Figure 3. 2 - Carrier N - CDMA Broadband Performance @ Pout = 12 Watts Avg.
13.8
35
Gps
VDD = 28 Vdc, Pout = 30 W (Avg.), IDQ = 750 mA
2−Carrier N−CDMA, 2.5 MHz Carrier Spacing,
IM3
13.6
13.4
37
ηD
1.2288 MHz Channel Bandwidth, PAR = 9.8 dB
@ 0.01% Probability (CCDF)
IRL
−31
13.2
13
1900
−37
ACPR
1920
1940
1960
−25
1980
2000
−43
2020
−5
−10
−15
−20
IRL, INPUT RETURN LOSS (dB)
Gps, POWER GAIN (dB)
14
ηD, DRAIN
EFFICIENCY (%)
39
IM3 (dBc), ACPR (dBc)
14.2
f, FREQUENCY (MHz)
Figure 4. 2 - Carrier N - CDMA Broadband Performance @ Pout = 30 Watts Avg.
IDQ = 1150 mA
16
VDD = 28 Vdc
f1 = 1960 MHz, f2 = 1962.5 MHz
Two −Tone Measurements, 2.5 MHz Tone Spacing
950 mA
15
750 mA
14
550 mA
13
350 mA
12
−15
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
17
Gps, POWER GAIN (dB)
ARCHIVE INFORMATION
ACPR
−5
ARCHIVE INFORMATION
VDD = 28 Vdc, Pout = 12 W (Avg.), IDQ = 750 mA
2−Carrier N−CDMA, 2.5 MHz Carrier Spacing,
1.2288 MHz Channel Bandwidth, PAR = 9.8 dB
@ 0.01% Probability (CCDF)
14.4
23
IRL, INPUT RETURN LOSS (dB)
ηD
IM3 (dBc), ACPR (dBc)
Gps, POWER GAIN (dB)
14.6
ηD, DRAIN
EFFICIENCY (%)
14.8
VDD = 28 Vdc
f1 = 1960 MHz, f2 = 1962.5 MHz
Two −Tone Measurements,
2.5 MHz Tone Spacing
−20
−25
−30
IDQ = 350 mA
−35
1150 mA
−40
950 mA
−45
750 mA
−50
550 mA
−55
−60
1
10
100
1
10
100
Pout, OUTPUT POWER (WATTS) PEP
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF5S19060MR1 MRF5S19060MBR1
6
RF Device Data
Freescale Semiconductor
54
VDD = 28 Vdc, Pout = 12 W (Avg.), IDQ = 750 mA
Two −Tone Measurements, Center Frequency = 1960 MHz
−15
Pout, OUTPUT POWER (dBm)
−20
−25
3rd Order
−30
−35
−40
5th Order
−45
7th Order
P1dB = 48.65 dBm (73.3 W)
51
Actual
50
49
48
47
VDD = 28 Vdc, IDQ = 750 mA
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 1960 MHz
46
45
−55
0.1
44
10
Ideal
52
−50
1
P3dB = 49.4 dBm (87 W)
53
100
30 31
32 33 34 35
36 37 38 39 40
41 42 43
TWO −TONE SPACING (MHz)
Pin, INPUT POWER (dBm)
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
Figure 8. Pulse CW Output Power versus
Input Power
TC = −30_C
ηD
VDD = 28 Vdc, IDQ = 750 mA
25_C
f1 = 1960 MHz, f2 = 1962.5 MHz
85_C
2−Carrier N−CDMA, 2.5 MHz Carrier
85_C
IM3
Spacing, 1.2288 MHz Channel
25_C
Bandwidth, PAR = 9.8 dB
−30_C
@ 0.01% Probability (CCDF)
ACPR
85_C
25_C
−30_C
Gps
−30_C
25_C
85_C
35
30
25
20
15
10
5
−10
−20
−30
−40
−50
−60
−70
IM3, (dBc), ACPR (dBc)
40
−80
0
−90
1
10
100
Pout, OUTPUT POWER (WATTS) AVG.
Figure 9. 2 - Carrier N - CDMA ACPR, IM3, Power Gain
and Drain Efficiency versus Output Power
16
16
−30_C
25_C
50
15
14
40
85_C
13
85_C
VDD = 28 Vdc
IDQ = 750 mA
f = 1960 MHz
12
30
ηD
20
Gps
11
10
1
10
10
0
100
Gps, POWER GAIN (dB)
15
ηD, DRAIN EFFICIENCY (%)
Gps, POWER GAIN (dB)
60
25_C
TC = −30_C
44
ARCHIVE INFORMATION
−10
ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
ARCHIVE INFORMATION
IMD, INTERMODULATION DISTORTION (dBc)
TYPICAL CHARACTERISTICS
VDD = 32 V
14
13
28 V
12
11
10
30
24 V
50
IDQ = 750 mA
f = 1960 MHz
70
90
Pout, OUTPUT POWER (WATTS) CW
Pout, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
Figure 11. Power Gain versus Output Power
MRF5S19060MR1 MRF5S19060MBR1
RF Device Data
Freescale Semiconductor
7
TYPICAL CHARACTERISTICS
108
107
ARCHIVE INFORMATION
106
90 100 110 120 130 140 150 160 170 180 190 200 210
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2 for MTTF in a particular application.
Figure 12. MTTF Factor versus Junction Temperature
N - CDMA TEST SIGNAL
100
0
1.2288 MHz
Channel BW
−10
10
−20
1
−IM3 in
1.2288 MHz
Integrated BW
−30
+IM3 in
1.2288 MHz
Integrated BW
−40
0.1
IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8
Through 13) 1.2288 MHz Channel Bandwidth
Carriers. ACPR Measured in 30 kHz Bandwidth @
±885 kHz Offset. IM3 Measured in 1.2288 MHz
Bandwidth @ ±2.5 MHz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF.
0.01
0.001
(dB)
PROBABILITY (%)
ARCHIVE INFORMATION
MTTF FACTOR (HOURS X AMPS2)
109
−50
−60
−70
−ACPR in 30 kHz
Integrated BW
+ACPR in 30 kHz
Integrated BW
−80
0.0001
0
2
4
6
8
10
−90
PEAK −TO−AVERAGE (dB)
Figure 13. 2 - Carrier CCDF N - CDMA
−100
−7.5
−6
−4.5
−3
−1.5
0
1.5
3
4.5
6
7.5
f, FREQUENCY (MHz)
Figure 14. 2 - Carrier N - CDMA Spectrum
MRF5S19060MR1 MRF5S19060MBR1
8
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
Zload
f = 1990 MHz
f = 1930 MHz
Zsource
f = 1930 MHz
Zo = 5 Ω
VDD = 28 Vdc, IDQ = 750 mA, Pout = 12 W Avg.
f
MHz
Zsource
Ω
Zload
Ω
1930
3.11 - j4.55
2.60 - j3.18
1960
3.06 - j4.38
2.50 - j2.85
1990
2.93 - j4.28
2.44 - j2.53
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
ARCHIVE INFORMATION
f = 1990 MHz
Z
load
Figure 15. Series Equivalent Source and Load Impedance
MRF5S19060MR1 MRF5S19060MBR1
RF Device Data
Freescale Semiconductor
9
NOTES
MRF5S19060MR1 MRF5S19060MBR1
10
RF Device Data
Freescale Semiconductor
NOTES
MRF5S19060MR1 MRF5S19060MBR1
RF Device Data
Freescale Semiconductor
11
PACKAGE DIMENSIONS
E1
B
A
2X
E3
GATE LEAD
DRAIN LEAD
D
D1
4X
e
4X
b1
aaa M C A
2X
2X
D2
c1
E
H
DATUM
PLANE
F
ZONE J
A
A1
2X
A2
E2
NOTE 7
E5
E4
4
D3
3
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
E5
BOTTOM VIEW
C
SEATING
PLANE
PIN 5
NOTE 8
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M−1994.
3. DATUM PLANE −H− IS LOCATED AT THE TOP OF
LEAD AND IS COINCIDENT WITH THE LEAD
WHERE THE LEAD EXITS THE PLASTIC BODY AT
THE TOP OF THE PARTING LINE.
4. DIMENSIONS “D" AND “E1" DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .006 PER SIDE. DIMENSIONS “D" AND “E1" DO
INCLUDE MOLD MISMATCH AND ARE DETER−
MINED AT DATUM PLANE −H−.
5. DIMENSION “b1" DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE .005 TOTAL IN EXCESS
OF THE “b1" DIMENSION AT MAXIMUM MATERIAL
CONDITION.
6. DATUMS −A− AND −B− TO BE DETERMINED AT
DATUM PLANE −H−.
7. DIMENSION A2 APPLIES WITHIN ZONE “J" ONLY.
8. HATCHING REPRESENTS THE EXPOSED AREA
OF THE HEAT SLUG.
1
2
CASE 1486 - 03
ISSUE C
TO - 270 WB - 4
PLASTIC
MRF5S19060MR1
DIM
A
A1
A2
D
D1
D2
D3
E
E1
E2
E3
E4
E5
F
b1
c1
e
aaa
INCHES
MIN
MAX
.100
.104
.039
.043
.040
.042
.712
.720
.688
.692
.011
.019
.600
−−−
.551
.559
.353
.357
.132
.140
.124
.132
.270
−−−
.346
.350
.025 BSC
.164
.170
.007
.011
.106 BSC
.004
STYLE 1:
PIN 1.
2.
3.
4.
5.
MILLIMETERS
MIN
MAX
2.54
2.64
0.99
1.09
1.02
1.07
18.08
18.29
17.48
17.58
0.28
0.48
15.24
−−−
14
14.2
8.97
9.07
3.35
3.56
3.15
3.35
6.86
−−−
8.79
8.89
0.64 BSC
4.17
4.32
0.18
0.28
2.69 BSC
0.10
DRAIN
DRAIN
GATE
GATE
SOURCE
MRF5S19060MR1 MRF5S19060MBR1
12
RF Device Data
Freescale Semiconductor
MRF5S19060MR1 MRF5S19060MBR1
RF Device Data
Freescale Semiconductor
13
MRF5S19060MR1 MRF5S19060MBR1
14
RF Device Data
Freescale Semiconductor
MRF5S19060MR1 MRF5S19060MBR1
RF Device Data
Freescale Semiconductor
15
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purchase or use Freescale Semiconductor products for any such unintended or
unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all
claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
directly or indirectly, any claim of personal injury or death associated with such
unintended or unauthorized use, even if such claim alleges that Freescale
Semiconductor was negligent regarding the design or manufacture of the part.
Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc.
All other product or service names are the property of their respective owners.
© Freescale Semiconductor, Inc. 2006. All rights reserved.
RoHS-compliant and/or Pb-free versions of Freescale products have the functionality and electrical
characteristics of their non-RoHS-compliant and/or non-Pb-free counterparts. For further
information, see http://www.freescale.com or contact your Freescale sales representative.
For information on Freescale’s Environmental Products program, go to http://www.freescale.com/epp.
MRF5S19060MR1 MRF5S19060MBR1
Document Number: MRF5S19060M
Rev. 5, 5/2006
16
RF Device Data
Freescale Semiconductor
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