STW47NM50
N-CHANNEL 550V @ Tjmax - 0.065
Ω
- 45A TO-247
MDmesh™ MOSFET
ADVANCED DATA
TYPE V
DSS
(
@
Tjmax)
R
DS(on)
R ds(on)
*Q g
I
D
STW47NM50 550V < 0.085
Ω
5.6
Ω
*nC 45 A
TYPICAL R
DS
(on) = 0.065
Ω
HIGH dv/dt AND AVALANCHE CAPABILITIES
100% AVALANCHE TESTED
LOW INPUT CAPACITANCE AND GATE
CHARGE
LOW GATE INPUT RESISTANCE
TIGHT PROCESS CONTROL AND HIGH
MANUFACTURING YIELDS
TO-247
1
2
3
DESCRIPTION
The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the
Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.
APPLICATIONS
The MDmesh™ family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
GS
Gate- source Voltage
Parameter
I
D
Drain Current (continuous) at T
C
= 100°C
P
TOT
Total Dissipation at T
C
Derating Factor
Peak Diode Recovery voltage slope dv/dt (1)
T stg
T j
Storage Temperature
Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
(1) I
SD
≤
45A, di/dt
≤
400A/µs, V
DD
≤
V
(BR)DSS
, T j
≤
T
JMAX.
February 2004
Value
±30
45
28.4
2.08
15
–65 to 150
150
Unit
V
A
A
W/°C
V/ns
°C
°C
1/6
STW47NM50
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Rthj-amb Thermal Resistance Junction-ambient
T l
Max
Max
Maximum Lead Temperature For Soldering Purpose
AVALANCHE CHARACTERISTICS
Symbol Parameter
I
AR
E
AS
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T j max)
Single Pulse Avalanche Energy
(starting T j
= 25 °C, I
D
= I
AR
, V
DD
= 35 V)
0.3
30
300
Max Value
20
810
ELECTRICAL CHARACTERISTICS (T
CASE
OFF
= 25 °C UNLESS OTHERWISE SPECIFIED)
Symbol Parameter Test Conditions Min.
Typ.
Max.
I
D
= 250 µA, V
GS
= 0 500 V
(BR)DSS
Drain-source
Breakdown Voltage
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating, T
C
= 125 °C
V
GS
= ±30 V
10
100
±100
°C/W
°C/W
°C
Unit
A mJ
Unit
V
µA
µA nA
ON (1)
Symbol
V
GS(th)
R
DS(on)
Parameter
Gate Threshold Voltage V
DS
= V
GS
, I
D
= 250 µA
Static Drain-source On
Resistance
V
GS
Test Conditions
= 10 V, I
D
= 22.5 A
Min.
3
Typ.
4
0.065
Max.
5
0.085
Unit
V
Ω
DYNAMIC
Symbol g fs
(1)
C iss
C oss
C rss
Parameter
Input Capacitance
Test Conditions
Forward Transconductance V
DS
> I
D(on)
I
D
= 22.5A
x R
DS(on)max,
V
DS
= 25V, f= 1 MHz, V
GS
= 0
Output Capacitance
Min.
Typ.
20
3700
610
50
Max.
Unit
S pF pF pF Reverse Transfer
Capacitance
= 0V to 400V 325 pF
Capacitance
R
G
Gate Input Resistance f=1 MHz Gate DC Bias = 0 Obsolete Product(s) - Obsolete Product(s)
Open Drain
1.7
Ω
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. C oss eq.
V
DSS
.
is defined as a constant equivalent capacitance giving the same charging time as C oss when V
DS increases from 0 to 80%
2/6
STW47NM50
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol Parameter Test Conditions t d(on)
Turn-on Delay Time t r
Q g
Q gs
Q gd
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 250V, I
D
= 22.5 A
R
G
= 4.7
Ω
V
GS
= 10 V
(see test circuit, Figure 3)
V
DD
= 400 V, I
V
GS
= 10 V
D
= 45 A,
SWITCHING OFF
Symbol Parameter
Off-voltage Rise Time t r(Voff) t f t c
Fall Time
Cross-over Time
Test Conditions
V
DD
R
G
= 400 V, I
D
= 4.7
Ω,
V
GS
= 45 A,
= 10 V
(see test circuit, Figure 5)
SOURCE DRAIN DIODE
Symbol Parameter
I
SD
I
SDM
(2)
V
SD
(1) t rr
Q rr
I
RRM
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Test Conditions
I
SD
= 45 A, V
GS
= 0
I
SD
= 40 A, di/dt = 100A/µs,
V
DD
= 100 V, T j
= 25°C
(see test circuit, Figure 5) t rr
Q rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
V
DD
= 40 A, di/dt = 100A/µs,
= 100 V, T j
= 150°C
(see test circuit, Figure 5)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Min.
Typ.
40
35
87
23
42
Max.
117
Unit ns ns nC nC nC
Min.
Typ.
18
23
44
Max.
Unit ns ns ns
Min.
520
7.8
30
680
11.2
33
Typ.
Max.
45
180
1.5
Unit
A
A
V ns
µC
A ns
µC
A
Obsolete Product(s) - Obsolete Product(s)
Obsolete Product(s) - Obsolete Product(s)
3/6
STW47NM50
Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuit For
Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
Obsolete Product(s) - Obsolete Product(s)
Obsolete Product(s) - Obsolete Product(s)
4/6
DIM.
L5
M
V
V2
Dia
L
L1
L2
L3
L4
F2
F3
F4
G
H
A
D
E
F
F1
2
3
15.45
19.85
3.70
14.20
MIN.
4.85
2.20
0.40
1
2
3.55
18.50
34.60
5.50
5º
60º
TO-247 MECHANICAL DATA
mm.
TYP MAX.
5.15
2.60
0.80
1.40
MIN.
0.19
0.08
0.015
0.04
3
2
10.90
2.40
3.40
15.75
20.15
4.30
14.80
0.07
0.11
0.60
0.78
0.14
0.56
3 0.07
3.65
0.14
inch
TYP.
0.72
1.36
0.21
5º
60º
0.11
0.07
0.43
STW47NM50
0.09
0.13
0.62
0.79
0.17
0.58
MAX.
0.20
0.10
0.03
0.05
0.11
0.143
Obsolete Product(s) - Obsolete Product(s)
Obsolete Product(s) - Obsolete Product(s)
5/6
STW47NM50
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from Obsolete Product(s) - Obsolete Product(s) mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
All other names are the property of their respective owners
© 2004 STMicroelectronics - All Rights Reserved
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