A1
A2
K
A1
K
TO-247 LL
A2
Features
No or negligible reverse recovery
Switching behavior independent of temperature
Robust high voltage periphery
Operating T j
from -40 °C to 175 °C
ECOPACK ® 2 compliant
STPSC20H12C
1200 V power Schottky silicon carbide diode
Datasheet - production data
Description
The SiC diode, available in TO-247 LL, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate.
The wide band-gap material allows the design of a low V
F
Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
Especially suited for use in PFC and secondary side applications, this ST SiC diode will boost the performance in hard switching conditions. This rectifier will enhance the performance of the targeted application. Its high forward surge capability ensures a good robustness during transient phases.
Table 1: Device summary
Symbol Value
I
F(AV)
V
RRM
T j
(max.)
V
F
(typ.)
2 x 10 A
1200 V
175 °C
1.35 V
February 2017 DocID030344 Rev 1
This is information on a product in full production.
1/10 www.st.com
Characteristics
1 Characteristics
STPSC20H12C
Table 2: Absolute ratings (limiting values per diode at 25 °C, unless otherwise specified)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage (T j
= -40 °C to +175 °C)
I
F(RMS)
Forward rms current
T
C
= 150 °C, DC current
I
F(AV)
Average forward current
T
C
= 135 °C, DC current
Per diode/per device
T
C
= 25 °C, DC current
1200
25
10/20
14/28
25/50
V
A
A
I
FRM
Repetitive peak forward current
T
C
= 150 °C, T j
= 175 °C, δ = 0.1 42 A
I
FSM
T
T stg j
Surge non repetitive forward current t p
= 10 ms sinusoidal t p
= 10 µs square
Storage temperature range
Operating junction temperature range
T
C
= 25 °C
T
C
= 150 °C
T
C
= 25 °C
71
60 A
420
-65 to +175 °C
-40 to +175 °C
Symbol
R th(j-c)
Table 3: Thermal resistance parameters
Parameter Typ. value
Junction to case
Per diode
Per device
0.70
0.35
Max. value
0.95
0.48
Unit
°C/W
Symbol
I
R
(1)
V
F
(2)
Table 4: Static electrical characteristics (per diode)
Parameter Test conditions Min. Typ. Max. Unit
Reverse leakage current
Forward voltage drop
T j
= 25 °C
T j
= 150 °C
T j
= 25 °C
T j
= 150 °C
I
V
F
R
= V
RRM
= 10 A
-
-
-
-
5
30
1.35
1.75
60
400
1.50
2.25
µA
V
Notes:
(1)
Pulse test: t p
= 10 ms, δ < 2%
(2)
Pulse test: t p
= 500 µs, δ < 2%
To evaluate the conduction losses, use the following equation:
P = 1.03 x I
F(AV)
+ 0.122 x I
F
2
(RMS)
2/10 DocID030344 Rev 1
STPSC20H12C Characteristics
Table 5: Dynamic electrical characteristics (per diode)
Parameter Test conditions Min. Typ. Max. Unit Symbol
Q
Cj
(1)
Total capacitive charge V
R
= 800 V
C j
Total capacitance
V
R
= 0 V, T c
= 25 °C, F = 1 MHz
V
R
= 800 V, T c
= 25 °C, F = 1 MHz
-
-
-
57
725
47
-
-
- nC pF
Notes:
(1)
Most accurate value for the capacitive charge:
𝑄 𝑐𝑗
( 𝑉
𝑅
) = ∫
0
𝑉
𝑅 𝐶 𝑗
( 𝑉 ) 𝑑𝑉
DocID030344 Rev 1 3/10
Characteristics
1.1 Characteristics (curves)
Figure 1: Forward voltage drop versus forward current (typical values, per diode)
20
IF(A)
Pulse test : t p
= 500 µs
STPSC20H12C
Figure 2: Reverse leakage current versus reverse voltage applied (typical values, per diode)
1.E+02
I
R
(µA)
1.E+01
15
T j
= 150 °C
1.E+00
T a
= 25 °C
T a
= 150 °C
10
T j
= 25 °C
1.E-01
5
1.E-02
0
0.0
0.5
1.0
1.5
2.0
2.5
V
F
(V)
3.0
Figure 3: Peak forward current versus case temperature (per diode)
100
I
M
(A)
T
δ = 0.1
δ = tp/T
80 tp
1.E-03
0
700
600
V
R
(V)
100 200 300 400 500 600 700 800 900 1000 1100 1200
Figure 4: Junction capacitance versus reverse voltage applied (typical values, per diode)
Cj(pF)
F = 1 MHz
V
OSC
T j
= 30 mV
RMS
= 25 °C
60
δ = 0.3
δ = 0.5
500
400
300
40
20
200
100 δ = 1 δ = 0.7
0
0 25 50 75 100
Tc (°C)
125 150 175
0
0.1
1.0
10.0
100.0
1000.0
V
R
(V)
10000.0
Figure 5: Relative variation of thermal impedance junction to case versus pulse duration
Zth(j-c)/Rth(j-c)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.E-05
Single pulse
1.E-04 1.E-03 1.E-02 1.E-01 tp (s)
1.E+00
Figure 6: Non-repetitive peak surge forward current versus pulse duration (sinusoidal waveform, per diode)
1.E+03
I
FSM
(A)
1.E+02
1.E+01
1.E-05 1.E-04
T a
= 25 °C
T a
= 150 °C
1.E-03 tp(s)
1.E-02
4/10 DocID030344 Rev 1
STPSC20H12C
40
30
20
10
0
0
Figure 7: Total capacitive charges versus reverse voltage applied (typical values, per diode)
60
Qcj(nC)
50
100 200 300 400 500 600 700
VR(V)
800
Characteristics
DocID030344 Rev 1 5/10
Package information
2 Package information
STPSC20H12C
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK ® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK ® is an ST trademark.
Epoxy meets UL94, V0
Cooling method: by conduction (C)
Recommended torque value: 0.9 to 1.2 N·m
6/10 DocID030344 Rev 1
STPSC20H12C
2.1 TO-247 long leads package information
Figure 8: TO-247 long leads package outline
Package information
DocID030344 Rev 1 7/10
Package information
Dim.
L4
L5
M
V
L
L1
L2
L3
F1
F2
G
H
A
D
E
F
V1
V3
DIA
15.77
20.82
4.16
5.49
20.05
3.68
6.04
2.25
Min.
4.90
1.85
0.55
1.07
1.90
2.87
Table 6: TO-247 long leads package mechanical data mm. Inches
STPSC20H12C
Typ. Typ.
10.90 BSC
Max.
5.15
2.10
0.67
1.32
2.38
3.38
Min.
0.192
0.072
0.021
0.042
0.074
0.110
0.429 BSC
Max.
0.202
0.082
0.026
0.051
0.093
0.133
3.55
10°
3°
20°
16.02
21.07
4.47
5.74
20.30
3.93
6.29
2.55
3.66
0.620
0.810
0.163
0.216
0.789
0.144
0.237
0.088
0.139
10°
3°
20°
0.630
0.820
0.175
0.225
0.799
0.154
0.247
0.100
0.143
8/10 DocID030344 Rev 1
STPSC20H12C
3 Ordering information
Ordering information
Order code
Table 7: Ordering information
Marking Package Weight Base qty. Delivery mode
STPSC20H12CWL STPSC20H12CWL TO-247 LL 6.09 g 30 Tube
4 Revision history
Date
Table 8: Document revision history
Revision Changes
28-Feb-2017 1 Initial release.
DocID030344 Rev 1 9/10
STPSC20H12C
IMPORTANT NOTICE – PLEASE READ CAREFULLY
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2017 STMicroelectronics
– All rights reserved
10/10 DocID030344 Rev 1
