STD80N6F6
Automotive-grade Nchannel 60 V, 4.4 mΩ typ., 80 A
STripFET™ F6 Power MOSFET in a DPAK package
Datasheet - production data
Figure 1: Internal schematic diagram
D(2, TAB)
G(1)
Features
Order code V
DS
R
DS(on)
max.
STD80N6F6 60 V 5 mΩ
AEC-Q101 qualified
Very low on-resistance
Very low gate charge
High avalanche ruggedness
Low gate drive power loss
I
D
80 A
Applications
Switching applications
Description
This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting
Power MOSFET exhibits very low R
DS(on)
in all packages.
S(3)
Order code
STD80N6F6
AM01475v1_noZen
Table 1: Device summary
Marking Package
80N6F6 DPAK
Packaging
Tape and reel
May 2017 DocID023471 Rev 3
This is information on a product in full production.
1/16 www.st.com
Contents
Contents
STD80N6F6
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1
Electrical characteristics (curves) ...................................................... 6
3 Test circuits ..................................................................................... 8
4 Package mechanical data ............................................................... 9
4.1
4.2
DPAK (TO-252) type A2 package information................................. 10
DPAK (TO-252) tape and reel mechanical data .............................. 13
5 Revision history ............................................................................ 15
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STD80N6F6
1 Electrical ratings
Symbol
Table 2: Absolute maximum ratings
Parameter
V
DS
V
GS
I
D
(1)
I
D
(1)
I
DM
(2)
P
TOT
T stg
T j
Drain-source voltage
Gate-source voltage
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
Total dissipation at T
C
= 25 °C
Storage temperature range
Operating junction temperature range
Notes:
(1)
Current limited by package.
(2)
Pulse width limited by safe operating area.
Symbol
Table 3: Thermal data
Parameter
R thj-case
R
thj-pcb
(1)
Thermal resistance junction-case
Thermal resistance junction-pcb
Notes:
(1)
When mounted on a 1-inch² FR-4 board, 2oz Cu.
Electrical ratings
Value
60
±20
80
80
320
120
- 55 to 175
Unit
V
V
A
A
A
W
°C
Value
1.25
50
Unit
°C/W
°C/W
DocID023471 Rev 3 3/16
Electrical characteristics
2 Electrical characteristics
(T
C
= 25 °C unless otherwise specified).
Symbol Parameter
Table 4: Static
Test conditions
V
(BR)DSS
I
DSS
Drain-source breakdown voltage
V
GS
= 0 V, I
D
= 250 µA
V
GS
= 0 V, V
DS
= 60 V
Zero gate voltage drain current
V
GS
= 0 V, V
DS
= 60 V,
T j
= 125 °C (1)
Gate-body leakage current V
DS
= 0 V, V
GS
= ±20 V I
GSS
V
GS(th)
Gate threshold voltage
R
DS(on)
Static drain-source on-resistance
V
V
DS
GS
= V
GS
, I
D
= 10 V, I
= 250 µA
D
= 40 A
STD80N6F6
Min. Typ. Max. Unit
60
3
V
1 µA
100 µA
4.4
±100 nA
4.5 V
5 mΩ
Notes:
(1)
Defined by design, not subject to production test.
Symbol Parameter
Table 5: Dynamic
Test conditions
C iss
C oss
C rss
Q g
Q gs
Q gd
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-source charge
Gate-drain charge
V
DS
= 25 V, f = 1 MHz,
V
GS
= 0 V
V
DD
= 30 V, I
D
= 80 A, V
GS
= 0 to 10 V
(see Figure 14: "Test circuit for gate charge behavior" )
Symbol Parameter t d(on)
Turn-on delay time t r
Rise time t d(off)
Turn-off delay time t f
Fall time
Table 6: Switching times
Test conditions
V
DD
= 30 V, I
D
= 40 A,
R
G
= 4.7 Ω, V
GS
= 10 V
(see Figure 13: "Test circuit for resistive load switching times" and Figure 18: "Switching time waveform" )
Min. Typ. Max. Unit
-
-
8325
500
-
- pF pF
-
-
-
-
Min. Typ. Max. Unit
-
-
-
40
71
132
-
-
- ns ns ns
-
400
147
44
46
40
-
-
-
-
- pF nC nC nC ns
4/16 DocID023471 Rev 3
STD80N6F6
Symbol Parameter
I
SD
(1)
Source-drain current
I
SDM
(2)
Source-drain current
(pulsed)
V
SD
(3)
Forward on voltage t rr
Q rr
Reverse recovery time
Reverse recovery charge
I
RRM
Table 7: Source-drain diode
Test conditions
Reverse recovery current
I
V
GS
SD
= 0 V, I
SD
= 80 A
= 80 A, di/dt = 100 A/µs,
V
DD
= 48 V, T j
= 150 °C
(see Figure 15: "Test circuit for inductive load switching and diode recovery times" )
Electrical characteristics
Min. Typ. Max. Unit
-
-
-
-
-
-
46
65
2.8
80
320
1.3
A
A
V ns nC
A
Notes:
(1)
Current limited by package.
(2)
Pulse width limited by safe operating area.
(3) Pulsed: pulse duration = 300 μs, duty cycle 1.5%.
DocID023471 Rev 3 5/16
Electrical characteristics
2.1 Electrical characteristics (curves)
Figure 2: Safe operating area
STD80N6F6
Figure 3: Thermal impedance
Figure 4: Output characteristics Figure 5: Transfer characteristics
Figure 6: Normalized gate threshold voltage vs. temperature
Figure 7: Normalized V
(BR)DSS
vs. temperature
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STD80N6F6
Figure 8: Static drain-source on-resistance
Electrical characteristics
Figure 9: Normalized on-resistance vs. temperature
Figure 10: Gate charge vs. gate-source voltage Figure 11: Capacitance variations
Figure 12: Source- drain diode forward characteristics
DocID023471 Rev 3 7/16
Test circuits
3 Test circuits
Figure 13: Test circuit for resistive load switching times
STD80N6F6
Figure 14: Test circuit for gate charge behavior
Figure 15: Test circuit for inductive load switching and diode recovery times
Figure 16: Unclamped inductive load test circuit
Figure 17: Unclamped inductive waveform Figure 18: Switching time waveform
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STD80N6F6
4
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK ® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK ® is an ST trademark.
DocID023471 Rev 3 9/16
Package mechanical data
4.1 DPAK (TO-252) type A2 package information
Figure 19: DPAK (TO-252) type A2 package outline
STD80N6F6
10/16 DocID023471 Rev 3
STD80N6F6
Dim.
D1
E
E1 e e1
H
L
L1
L2
L4
R
V2 b4 c c2
D
A
A1
A2 b
Package mechanical data
Table 8: DPAK (TO-252) type A2 mechanical data mm
Min. Typ. Max.
4.95
6.40
5.10
2.16
4.40
9.35
1.00
2.20
0.90
0.03
0.64
5.20
0.45
0.48
6.00
2.60
0.65
0.60
0°
5.10
5.20
2.28
2.80
0.80
0.20
5.25
6.60
5.30
2.40
4.60
10.10
1.50
2.40
1.10
0.23
0.90
5.40
0.60
0.60
6.20
3.00
0.95
1.00
8°
DocID023471 Rev 3 11/16
Package mechanical data STD80N6F6
Figure 20: DPAK (TO-252) type A2 recommended footprint (dimensions are in mm)
12/16 DocID023471 Rev 3
STD80N6F6
4.2
Package mechanical data
DPAK (TO-252) tape and reel mechanical data
Figure 21: DPAK (TO-252) tape outline
DocID023471 Rev 3 13/16
Package mechanical data
Figure 22: DPAK (TO-252) reel outline
STD80N6F6
14/16
Dim.
F
K0
P0
P1
P2
R
T
W
A0
B0
B1
D
D1
E
7.9
1.9
40
0.25
15.7
1.5
1.5
1.65
7.4
2.55
3.9
Table 9: DPAK (TO-252) tape and reel mechanical data
Tape Reel mm
Dim.
Min.
6.8
10.4
Max.
7
10.6
12.1
1.6
1.85
7.6
2.75
4.1
8.1
2.1
A
B
C
D
G
N
T
Base qty.
Bulk qty.
Min.
1.5
12.8
20.2
16.4
50
0.35
16.3 mm
Max.
330
13.2
18.4
22.4
2500
2500
DocID023471 Rev 3
STD80N6F6
5
Revision history
Revision history
Date Revision
Table 10: Document revision history
Changes
08-Aug-2012
17-Jan-2014
23-May-2017
1
2
3
Initial release.
– Document status promoted from preliminary to production data
– Modified: title
– Modified: Features
– Added: note 1 in cover page
– Modified: RDS(on)max and ID values in cover page
– Modified: Derating factor value in Table 2
– Modified: RDS(on) values in Table 4
– Modified: ID and the entire typical values in Table 5, 6 and 7
– Added: Section 2.1: Electrical characteristics (curves)
– Updated: Section 3: Package mechanical data
– Minor text changes
Modified title and features on cover page.
Modified Table 3: "Thermal data" .
Modified Section 4: "Package mechanical data" .
Minor text changes.
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STD80N6F6
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16/16 DocID023471 Rev 3
