# Appendix 5 Model card parameters for built-in components

Appendix 5 Model card parameters for built-in components In this Appendix, names and default values of model card parameters are given for built-in analogue components. These are SPICE models of diode, MOSFET, BJT, and JFET. In SPICE manuals more detailed explanations of these models and model card parameters can be found. Nevertheless, there are different versions of SPICE, and we hope this list of model card parameters can be useful to determine which version of SPICE model is implemented in Alecsis. If you need some version of the model that is not built into Alecsis, you have to define new model in AleC++. Note: In the parameter tables, some of the parameters are dummy, i.e. they have no meaning. They are given here for completeness, as memory is allocated for them (as in SPICE). Some of them are used for results of parameters preprocessing. A5.1. Diode model card parameters SPICE 2G6 diode model is built into Alecsis. 208 Appendix 5. Model card parameters for built-in components 209 Physical units are not given in the following table. We will give these units in new versions of this Manual. Table A5.1. name default Diode model card parameters in Alecsis. unit - meaning dummy, not used saturation current is 1e-14 parasitic resistance rs 0.0 emission coefficient n 1.0 transit time tt 0.0 zero-bias p-n capacitance cjo 0.0 p-n potential vj 1.0 p-n grading coefficient m 0.5 bandgap voltage eg 1.11 IS temperature coefficient xti 3.0 flicker noise coefficient kf 0.0 flicker noise exponent af 1.0 forward-bias depletion capacitance coefficient fc 0.5 reverse breakdown "knee" voltage bv 0.0 reverse breakdown "knee" current ibv 1e-3 Following parameters are read from the model card, but are not used in the current version of the model: recombination current parameter isr emission coefficient for ISR nr high-injection "knee" current ikf reverse breakdown ideality factor nbv low-level reverse breakdown "knee" current ibvl low-level reverse breakdown ideality factor nbvl IKF temperature coefficient (linear) tikf BV temperature coefficient (linear) tbv1 BV temperature coefficient (quadratic) tbv2 RS temperature coefficient (linear) trs1 RS temperature coefficient (quadratic) trs2 - A5.2. MOSFET model card parameters Alecsis has four versions (levels) of MOS models. These are level 1, level 2, level 3 and level 13 models. The first three are standard SPICE models. Fourth model is BSIM model (Berkeley Short-Channel IGFET Model), which is denoted as level 13 in HSPICE. A5.2.1. MOSFET level 1, 2 and 3 parameters SPICE 2G6 MOSFET level 1, 2, and 3 models are built into Alecsis. 210 Alecsis 2.3 - User’s manual Parameter explanations are not given in the following table. We will give these explanations in new versions of this Manual. Table A5.2. MOSFET level 1, 2, and 3 model card parameters in Alecsis. name default level gamma nss nsub phi tpg vto af kf rd rs rsh cgso cgdo cgbo tox cj cjsw mj mjsw pb fc ld kp lambda delta neff nfs ucrit uexp uo vmax xj is js kappa theta cox eta vbi xqc xd fnarrow vt xd2 1 1.0e15 1.0 1.0 1.0e-7 0.5 0.33 0.8 0.5 1.0 1.0e4 600.0 1.0e-14 0.2 - unit V1/2 1/cm2 1/cm3 V V Ω Ω Ω/square F/m F/m F/m m F/m2 F/m V m A/V2 1/V 1/cm2 V/cm cm2/(Vs) m/s m A A/m2 1/V F/m2 V - meaning For use of macromodels. Appendix 5. Model card parameters for built-in components 211 Following parameters are read from the model card, but are not used in the current version of the model: rg Ω rb Ω rds Ω A/m jssw n − V pbsw F cbd F cbs s tt m wd utra The following two parameters are used, if they are not given when MOS transistor is invoked (connected): m channel length l 0.0 m channel width w 0.0 A5.2.2. BSIM parameters (level 13) HSPICE MOSFET level 13 model is built into Alecsis. Table A5.3. MOSFET level 13 model card parameters in Alecsis. name default level vfb0 lvfb wvfb phi0 lphi wphi k1 lk1 wk1 k2 lk2 wk2 eta0 leta weta muz dl0 dw0 u00 lu0 wu0 u1 lu1 wu1 x2m lx2m wx2m -1.0641 1.71979e-1 1.11454e-1 7.95392e-1 0.0 0.0 1.10425 -4.3371e-1 -9.8518e-2 1.93126e-1 4.14269e-4 -6.0274e-2 -4.7124e-3 -1.0565e-2 1.08645e-2 6.00853e2 6.2438e-1 1.0384 5.11222e-2 1.73108e-1 -5.9804e-2 -2.3954e-1 2.91101 -5.3638e-2 4.66158 -8.0305 5.54267 unit V V µm V µm V V µm V µm V1/2 V1/2 µm V1/2 µm µm µm µm µm cm2/(Vs) µm µm 1/V (1/V) µm (1/V) µm µm/V (µm/V) µm (µm/V) µm (cm/V)2 / s ((cm/V)2 / s) µm ((cm/V)2 / s) µm meaning mosfet model level selector, 13 for HSPICE BSIM flatband voltage and its length and width sensitivities two times the Fermi potential, its length and width sensitivities root-vbs threshold coefficient, its length and width sensitivities linear vbs threshold coefficient, its length and width sensitivities linear vds threshold coefficient, its length and width sensitivities low drain field first order mobility difference between drawn poly and electrical difference between drawn diffusion and electrical gate field mobility reduction factor, its length and width sensitivities drain field mobility reduction factor, its length and width sensitivities vbs correction to low field first order mobility, its length and width sensitivities 212 x2e lx2e wx2e x3e lx3e wx3e x2u0 lx2u0 wx2u0 x2u1 lx2u1 wx2u1 mus lms wms x2ms lx2ms wx2ms x3ms lx3ms wx3ms x3u1 lx3u1 wx3u1 toxm tempm vddm cgdom cgsom cgbom xpart dum1 dum2 n0 ln0 wn0 nb0 lnb wnb nd0 lnd wnd rshm cjm cjw ijs pj pjw mj0 mjw wdf ds Alecsis 2.3 - User’s manual -9.142e-4 1.23113e-2 2.4326e-3 1.05704e-4 1.04115e-2 -2.5834e-3 2.68363e-4 -1.5668e-3 -8.5052e-4 -7.2567e-2 1.10182e-1 5.66859e-2 5.49834e2 1.77273e3 -9.0196e1 -1.6724e1 8.98504 2.8234e1 4.86164 1.56629e1 -6.57 7.76925e-3 -1.094e-1 -8.3353e-3 2.5e-2 25.0 5.0 1.5e-9 1.5e-9 2.0e-10 1.0 0.0 0.0 1.5 0.0 0.0 0.1 0.0 0.0 0.0 0.0 0.0 50.0 4.5e-5 0.0 1.0e-4 0.8 0.6 0.5 0.33 2.0e-6 0.5 1/V (1/V) µm (1/V) µm 1/V (1/V) µm (1/V) µm 1/V2 (1/V2) µm (1/V2) µm µm/V2 (µm/V2) µm (µm/V2) µm cm2/(Vs) cm2/(Vs) µm cm2/(Vs) µm (cm/V)2 / s ((cm/V)2 / s) µm ((cm/V)2 / s) µm (cm/V)2 / s ((cm/V)2 / s) µm ((cm/V)2 / s) µm µm/V2 (µm/V2) µm (µm/V2) µm µm ºC V F/m F/m F/m µm µm 1/V (1/V) µm (1/V) µm 1/V (1/V) µm (1/V) µm Ω/square F/m2 F/m A/m2 V V m m vbs correction to linear vds threshold coefficient, its length and width sensitivities vds correction to linear vds threshold coefficient, its length and width sensitivities vbs reduction to gate field mobil. reduction factor, its length and width sensitivities vbs reduction to drain field mobil. reduction factor, its length and width sensitivities high drain field mobility, its length and width sensitivities vbs reduction to high drain field mobility, its length and width sensitivities vds reduction to high drain field mobility, its length and width sensitivities vds reduction to drain field mobility reduction factor, its length and width sensitivities gate oxide thickness reference temperature of model critical voltage for high drain field mobility reduction gate to drain parasitic capacitance; f/m of width gate to source parasitic capacitance; f/m of width gate to bulk parasitic capacitance; f/m of length selector for gate capacitance charge sharing coefficient dummy, not used dummy, not used low field weak inversion gate drive coefficient, -||-, value of 200 for n0 disables weak inversion calculation vbs reduction to low field weak inversion gate drive coefficient., its length and width sensitivities vds reduction to low field weak inversion gate drive coefficient., its length and width sensitivities sheet resistance / square zero-bias bulk junction bottom capacitance zero-bias bulk junction sidewall capacitance bulk junction saturation current bulk junction bottom potential bulk junction sidewall potential bulk junction bottom grading coefficient bulk junction sidewall grading coefficient default width of the layer average variation of size due to side etching or mask compensation Appendix 5. Model card parameters for built-in components 213 A5.3. BJT model card parameters SPICE 2G6 bipolar junction transistor (BJT) model is built into Alecsis. Table A5.4. BJT model card parameters in Alecsis. name default is bf nf vaf ikf ise ne br nr var ikr isc nc 1.0e-16 100. 1. 0. (means ∝) 0. (means ∝) 0. 1.5 1. 1. 0. (means ∝) 0. (means ∝) 0. 2. rb irb rbm re rc cje vje mje tf xtf vtf itf ptf cjc vjc mjc xcjc 0. 0. (means ∝) 0. (means rb) 0. 0. 0. 0.75 0.33 0. 0. 0. (means ∝) 0. 0. 0. 0.75 0.33 1. tr 0. cjs vjs mjs xtb eg xti kf 0. 0.75 0.5 0 1.11 3. 0. unit A V A A V A A Ω A Ω Ω Ω F V s V A º F V s F V eV - meaning dummy, not used saturation current ideal maximum forward current gain forward current emission coefficient forward early voltage corner for forward beta high-current roll-off base-emitter leakage saturation current base-emitter leakage emission coefficient ideal maximum reverse current gain reverse current emission coefficient reverse early voltage corner for reverse beta high-current roll-off base-collector leakage saturation current base-collector leakage emission coefficient dummy, not used dummy, not used zero bias base resistance current where base resistance falls halfway to its minimum value minimum base resistance at high currents emitter resistance collector resistance zero-bias base-emitter depletion capacitance base-emitter built-in potential base-emitter junction grading coefficient ideal forward transit time coefficient for bias dependence of tf voltage describing vbc depencence of tf high-current parameter for effect on tf excess phase at f=1/(2*π*tf) zero-bias base-collector depletion capacitance base-collector built-in potential base-collector junction grading coefficient fraction of base-collector depletion capacitance connected to internal base node ideal reverse transit time dummy, not used dummy, not used dummy, not used dummy, not used zero-bias collector-substrate capacitance substrate-junction built-in potential substrate-junction exponential factor forward and reverse beta temperature coefficient energy gap for temperature effect on is saturation current temperature exponent flicker noise coefficient 214 Alecsis 2.3 - User’s manual flicker noise exponent coefficient for forward-bias depletion Following parameters are read from the model card, but are not used in the current version of the model: high-current roll-off coefficient nk A substrate p-n saturation current iss substrate p-n emission coefficient ns C epitaxial region charge factor qco epitaxial region resistance rco Ω V carrier mobility "knee" voltage vo epitaxial region doping factor gamma 1/ºC RE temperature coefficient(linear) tre1 1/(ºC)2 RE temperature coefficient(quadratic) tre2 1/ºC RB temperature coefficient(linear) tbr1 1/(ºC)2 RB temperature coefficient(quadratic) tbr2 1/ºC RBM temperature coefficient(linear) trm1 1/(ºC)2 RBM temperature coefficient(quadratic) trm2 1/ºC RC temperature coefficient(linear) trc1 1/(ºC)2 RC temperature coefficient(quadratic) trc2 af fc 1. 0.5 A5.4. JFET model card parameters SPICE JFET model is built into Alecsis. Physical units and parameter explanations are not given in the following table for most of the parameters. We will give these units and explanations in new versions of this Manual. Table A5.5. name default vto beta lambda rd rs cgs cgd pb is kf af fc -2.0 1e-4 0.0 0.0 0.0 0.0 0.0 1.0 1e-14 0.0 1.0 0.5 JFET model card parameters in Alecsis. unit - meaning dummy, not used - dummy, not used dummy, not used dummy, not used Appendix 5. Model card parameters for built-in components 215 dummy, not used Following parameters are read from the model card, but are not used in the current version of the model: dummy, not used dummy, not used dummy, not used gate p-n emission coefficient n gate p-n recombination current parameter isr emission coefficient for ISR nr ionization coefficient alpha ionization "knee" voltage vk gate p-n grading coefficient m VTO temperature coefficient vtotc BETA exponential temperature coefficient betatce IS temperature coefficient xti

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