Appendix 5 Model card parameters for built-in components

Appendix 5 Model card parameters for built-in components
Appendix 5
Model card parameters for built-in
components
In this Appendix, names and default values of model card parameters are given for built-in analogue
components. These are SPICE models of diode, MOSFET, BJT, and JFET. In SPICE manuals more detailed
explanations of these models and model card parameters can be found. Nevertheless, there are different versions of
SPICE, and we hope this list of model card parameters can be useful to determine which version of SPICE model is
implemented in Alecsis.
If you need some version of the model that is not built into Alecsis, you have to define new model in
AleC++.
Note:
In the parameter tables, some of the parameters are dummy, i.e. they have no meaning. They are
given here for completeness, as memory is allocated for them (as in SPICE). Some of them are used for results of
parameters preprocessing.
A5.1. Diode model card parameters
SPICE 2G6 diode model is built into Alecsis.
208
Appendix 5. Model card parameters for built-in components
209
Physical units are not given in the following table. We will give these
units in new versions of this Manual.
Table A5.1.
name
default
Diode model card parameters in Alecsis.
unit
-
meaning
dummy, not used
saturation current
is
1e-14
parasitic resistance
rs
0.0
emission coefficient
n
1.0
transit time
tt
0.0
zero-bias p-n capacitance
cjo
0.0
p-n potential
vj
1.0
p-n grading coefficient
m
0.5
bandgap voltage
eg
1.11
IS temperature coefficient
xti
3.0
flicker noise coefficient
kf
0.0
flicker noise exponent
af
1.0
forward-bias depletion capacitance coefficient
fc
0.5
reverse breakdown "knee" voltage
bv
0.0
reverse breakdown "knee" current
ibv
1e-3
Following parameters are read from the model card, but are not used in the current version of the model:
recombination current parameter
isr
emission coefficient for ISR
nr
high-injection "knee" current
ikf
reverse breakdown ideality factor
nbv
low-level reverse breakdown "knee" current
ibvl
low-level reverse breakdown ideality factor
nbvl
IKF temperature coefficient (linear)
tikf
BV temperature coefficient (linear)
tbv1
BV temperature coefficient (quadratic)
tbv2
RS temperature coefficient (linear)
trs1
RS temperature coefficient (quadratic)
trs2
-
A5.2. MOSFET model card parameters
Alecsis has four versions (levels) of MOS models. These are level 1, level 2, level 3 and level 13 models.
The first three are standard SPICE models. Fourth model is BSIM model (Berkeley Short-Channel IGFET Model),
which is denoted as level 13 in HSPICE.
A5.2.1. MOSFET level 1, 2 and 3 parameters
SPICE 2G6 MOSFET level 1, 2, and 3 models are built into Alecsis.
210
Alecsis 2.3 - User’s manual
Parameter explanations are not given in the following table. We will give
these explanations in new versions of this Manual.
Table A5.2.
MOSFET level 1, 2, and 3 model card parameters in Alecsis.
name
default
level
gamma
nss
nsub
phi
tpg
vto
af
kf
rd
rs
rsh
cgso
cgdo
cgbo
tox
cj
cjsw
mj
mjsw
pb
fc
ld
kp
lambda
delta
neff
nfs
ucrit
uexp
uo
vmax
xj
is
js
kappa
theta
cox
eta
vbi
xqc
xd
fnarrow
vt
xd2
1
1.0e15
1.0
1.0
1.0e-7
0.5
0.33
0.8
0.5
1.0
1.0e4
600.0
1.0e-14
0.2
-
unit
V1/2
1/cm2
1/cm3
V
V
Ω
Ω
Ω/square
F/m
F/m
F/m
m
F/m2
F/m
V
m
A/V2
1/V
1/cm2
V/cm
cm2/(Vs)
m/s
m
A
A/m2
1/V
F/m2
V
-
meaning
For use of macromodels.
Appendix 5. Model card parameters for built-in components
211
Following parameters are read from the model card, but are not used in the current version of the model:
rg
Ω
rb
Ω
rds
Ω
A/m
jssw
n
−
V
pbsw
F
cbd
F
cbs
s
tt
m
wd
utra
The following two parameters are used, if they are not given when MOS transistor is invoked (connected):
m
channel length
l
0.0
m
channel width
w
0.0
A5.2.2. BSIM parameters (level 13)
HSPICE MOSFET level 13 model is built into Alecsis.
Table A5.3.
MOSFET level 13 model card parameters in Alecsis.
name
default
level
vfb0
lvfb
wvfb
phi0
lphi
wphi
k1
lk1
wk1
k2
lk2
wk2
eta0
leta
weta
muz
dl0
dw0
u00
lu0
wu0
u1
lu1
wu1
x2m
lx2m
wx2m
-1.0641
1.71979e-1
1.11454e-1
7.95392e-1
0.0
0.0
1.10425
-4.3371e-1
-9.8518e-2
1.93126e-1
4.14269e-4
-6.0274e-2
-4.7124e-3
-1.0565e-2
1.08645e-2
6.00853e2
6.2438e-1
1.0384
5.11222e-2
1.73108e-1
-5.9804e-2
-2.3954e-1
2.91101
-5.3638e-2
4.66158
-8.0305
5.54267
unit
V
V µm
V µm
V
V µm
V µm
V1/2
V1/2 µm
V1/2 µm
µm
µm
µm
µm
cm2/(Vs)
µm
µm
1/V
(1/V) µm
(1/V) µm
µm/V
(µm/V) µm
(µm/V) µm
(cm/V)2 / s
((cm/V)2 / s) µm
((cm/V)2 / s) µm
meaning
mosfet model level selector, 13 for HSPICE BSIM
flatband voltage and its length and width sensitivities
two times the Fermi potential, its length and width
sensitivities
root-vbs threshold coefficient, its length and width
sensitivities
linear vbs threshold coefficient, its length and width
sensitivities
linear vds threshold coefficient, its length and width
sensitivities
low drain field first order mobility
difference between drawn poly and electrical
difference between drawn diffusion and electrical
gate field mobility reduction factor, its length and width
sensitivities
drain field mobility reduction factor, its length and width
sensitivities
vbs correction to low field first order mobility, its length and
width sensitivities
212
x2e
lx2e
wx2e
x3e
lx3e
wx3e
x2u0
lx2u0
wx2u0
x2u1
lx2u1
wx2u1
mus
lms
wms
x2ms
lx2ms
wx2ms
x3ms
lx3ms
wx3ms
x3u1
lx3u1
wx3u1
toxm
tempm
vddm
cgdom
cgsom
cgbom
xpart
dum1
dum2
n0
ln0
wn0
nb0
lnb
wnb
nd0
lnd
wnd
rshm
cjm
cjw
ijs
pj
pjw
mj0
mjw
wdf
ds
Alecsis 2.3 - User’s manual
-9.142e-4
1.23113e-2
2.4326e-3
1.05704e-4
1.04115e-2
-2.5834e-3
2.68363e-4
-1.5668e-3
-8.5052e-4
-7.2567e-2
1.10182e-1
5.66859e-2
5.49834e2
1.77273e3
-9.0196e1
-1.6724e1
8.98504
2.8234e1
4.86164
1.56629e1
-6.57
7.76925e-3
-1.094e-1
-8.3353e-3
2.5e-2
25.0
5.0
1.5e-9
1.5e-9
2.0e-10
1.0
0.0
0.0
1.5
0.0
0.0
0.1
0.0
0.0
0.0
0.0
0.0
50.0
4.5e-5
0.0
1.0e-4
0.8
0.6
0.5
0.33
2.0e-6
0.5
1/V
(1/V) µm
(1/V) µm
1/V
(1/V) µm
(1/V) µm
1/V2
(1/V2) µm
(1/V2) µm
µm/V2
(µm/V2) µm
(µm/V2) µm
cm2/(Vs)
cm2/(Vs) µm
cm2/(Vs) µm
(cm/V)2 / s
((cm/V)2 / s) µm
((cm/V)2 / s) µm
(cm/V)2 / s
((cm/V)2 / s) µm
((cm/V)2 / s) µm
µm/V2
(µm/V2) µm
(µm/V2) µm
µm
ºC
V
F/m
F/m
F/m
µm
µm
1/V
(1/V) µm
(1/V) µm
1/V
(1/V) µm
(1/V) µm
Ω/square
F/m2
F/m
A/m2
V
V
m
m
vbs correction to linear vds threshold coefficient, its length
and width sensitivities
vds correction to linear vds threshold coefficient, its length
and width sensitivities
vbs reduction to gate field mobil. reduction factor, its length
and width sensitivities
vbs reduction to drain field mobil. reduction factor, its
length and width sensitivities
high drain field mobility, its length and width sensitivities
vbs reduction to high drain field mobility, its length and
width sensitivities
vds reduction to high drain field mobility, its length and
width sensitivities
vds reduction to drain field mobility reduction factor, its
length and width sensitivities
gate oxide thickness
reference temperature of model
critical voltage for high drain field mobility reduction
gate to drain parasitic capacitance; f/m of width
gate to source parasitic capacitance; f/m of width
gate to bulk parasitic capacitance; f/m of length
selector for gate capacitance charge sharing coefficient
dummy, not used
dummy, not used
low field weak inversion gate drive coefficient, -||-, value of
200 for n0 disables weak inversion calculation
vbs reduction to low field weak inversion gate drive
coefficient., its length and width sensitivities
vds reduction to low field weak inversion gate drive
coefficient., its length and width sensitivities
sheet resistance / square
zero-bias bulk junction bottom capacitance
zero-bias bulk junction sidewall capacitance
bulk junction saturation current
bulk junction bottom potential
bulk junction sidewall potential
bulk junction bottom grading coefficient
bulk junction sidewall grading coefficient
default width of the layer
average variation of size due to side etching or mask
compensation
Appendix 5. Model card parameters for built-in components
213
A5.3. BJT model card parameters
SPICE 2G6 bipolar junction transistor (BJT) model is built into Alecsis.
Table A5.4.
BJT model card parameters in Alecsis.
name
default
is
bf
nf
vaf
ikf
ise
ne
br
nr
var
ikr
isc
nc
1.0e-16
100.
1.
0. (means ∝)
0. (means ∝)
0.
1.5
1.
1.
0. (means ∝)
0. (means ∝)
0.
2.
rb
irb
rbm
re
rc
cje
vje
mje
tf
xtf
vtf
itf
ptf
cjc
vjc
mjc
xcjc
0.
0. (means ∝)
0. (means rb)
0.
0.
0.
0.75
0.33
0.
0.
0. (means ∝)
0.
0.
0.
0.75
0.33
1.
tr
0.
cjs
vjs
mjs
xtb
eg
xti
kf
0.
0.75
0.5
0
1.11
3.
0.
unit
A
V
A
A
V
A
A
Ω
A
Ω
Ω
Ω
F
V
s
V
A
º
F
V
s
F
V
eV
-
meaning
dummy, not used
saturation current
ideal maximum forward current gain
forward current emission coefficient
forward early voltage
corner for forward beta high-current roll-off
base-emitter leakage saturation current
base-emitter leakage emission coefficient
ideal maximum reverse current gain
reverse current emission coefficient
reverse early voltage
corner for reverse beta high-current roll-off
base-collector leakage saturation current
base-collector leakage emission coefficient
dummy, not used
dummy, not used
zero bias base resistance
current where base resistance falls halfway to its minimum value
minimum base resistance at high currents
emitter resistance
collector resistance
zero-bias base-emitter depletion capacitance
base-emitter built-in potential
base-emitter junction grading coefficient
ideal forward transit time
coefficient for bias dependence of tf
voltage describing vbc depencence of tf
high-current parameter for effect on tf
excess phase at f=1/(2*π*tf)
zero-bias base-collector depletion capacitance
base-collector built-in potential
base-collector junction grading coefficient
fraction of base-collector depletion
capacitance connected to internal base node
ideal reverse transit time
dummy, not used
dummy, not used
dummy, not used
dummy, not used
zero-bias collector-substrate capacitance
substrate-junction built-in potential
substrate-junction exponential factor
forward and reverse beta temperature coefficient
energy gap for temperature effect on is
saturation current temperature exponent
flicker noise coefficient
214
Alecsis 2.3 - User’s manual
flicker noise exponent
coefficient for forward-bias depletion
Following parameters are read from the model card, but are not used in the current version of the model:
high-current roll-off coefficient
nk
A
substrate p-n saturation current
iss
substrate p-n emission coefficient
ns
C
epitaxial region charge factor
qco
epitaxial region resistance
rco
Ω
V
carrier mobility "knee" voltage
vo
epitaxial region doping factor
gamma
1/ºC
RE temperature coefficient(linear)
tre1
1/(ºC)2
RE temperature coefficient(quadratic)
tre2
1/ºC
RB temperature coefficient(linear)
tbr1
1/(ºC)2
RB temperature coefficient(quadratic)
tbr2
1/ºC
RBM temperature coefficient(linear)
trm1
1/(ºC)2
RBM temperature coefficient(quadratic)
trm2
1/ºC
RC temperature coefficient(linear)
trc1
1/(ºC)2
RC temperature coefficient(quadratic)
trc2
af
fc
1.
0.5
A5.4. JFET model card parameters
SPICE JFET model is built into Alecsis.
Physical units and parameter explanations are not given in the following
table for most of the parameters. We will give these units and
explanations in new versions of this Manual.
Table A5.5.
name
default
vto
beta
lambda
rd
rs
cgs
cgd
pb
is
kf
af
fc
-2.0
1e-4
0.0
0.0
0.0
0.0
0.0
1.0
1e-14
0.0
1.0
0.5
JFET model card parameters in Alecsis.
unit
-
meaning
dummy, not used
-
dummy, not used
dummy, not used
dummy, not used
Appendix 5. Model card parameters for built-in components
215
dummy, not used
Following parameters are read from the model card, but are not used in the current version of the model:
dummy, not used
dummy, not used
dummy, not used
gate p-n emission coefficient
n
gate p-n recombination current parameter
isr
emission coefficient for ISR
nr
ionization coefficient
alpha
ionization "knee" voltage
vk
gate p-n grading coefficient
m
VTO temperature coefficient
vtotc
BETA exponential temperature coefficient
betatce
IS temperature coefficient
xti
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