Semiconductor Characterization System
4200-SCS
Semiconductor Characterization System
The easy-to-use Model 4200-SCS Semiconductor Characterization System performs lab grade DC I-V,
C-V, and pulse device characterization, real-time plotting, and analysis with high precision and subfemtoamp resolution. The 4200-SCS offers the most advanced capabilities available in a fully integrated
characterization system, including a complete, embedded PC with Windows operating system and
mass storage. Its self-documenting, point-and-click interface speeds and simplifies the process of taking
data, so users can begin analyzing their results sooner. Additional features enable stress-measure capabilities suitable for a variety of reliability tests.
The powerful test library management tools included allow standardizing test methods and extractions to ensure consistent test results. The Model 4200-SCS offers tremendous flexibility with hardware options that include four different switch matrix configurations and a variety of LCR meters
and pulse generators. Customer support packages are also available, including applications support,
calibration, repair, and training.
• Unique Remote PreAmps extend
the resolution of SMUs to 0.1fA
• C-V instrument makes C-V
measurements as easy as DC I-V
• Pulse and pulse I-V capabilities
for advanced semiconductor
testing
• Scope card provides integrated
scope and pulse measure
functionality
• Self-contained PC provides
fast test setup, powerful data
analysis, graphing and printing,
and on-board mass storage of
test results
• Unique browser-style Project
Navigator organizes tests by
device type, allows access to
multiple tests, and provides test
sequencing and looping control
• Built-in stress/measure,
looping, and data analysis
for point-and-click reliability
testing, including five JEDECcompliant sample tests
• Integrated support for a variety
of LCR meters, Keithley switch
matrix configurations, and
both Keithley Series 3400 and
Agilent 81110 pulse generators
• Includes software drivers for
leading analytical probers
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Applications Packages
By combining specific sets of hardware with Keithley-developed code and interconnect, a variety
of application packages are offered that expand the Model 4200-SCS’s pulsed testing capabilities.
The 4200-PIV-A package performs charge trapping and isothermal testing for leading-edge CMOS
research. The 4200-PIV-Q package is designed for higher power pulse testing in III-V, LDMOS, and
other higher frequency and higher power FET devices. The 4200-FLASH package tests floating gate
FLASH and embedded NVM memory.
Extended Measurement Resolution
An optional Remote PreAmp, the Model 4200-PA, extends the system’s measurement resolution from
100fA to 0.1fA by effectively adding five current ranges to either SMU model. The PreAmp module
is fully integrated with the system; to the user, the SMU simply appears to have additional measurement resolution available. The Remote PreAmp is shipped installed on the back panel of the Model
4200-SCS for local operation. This installation allows for standard cabling to a prober, test fixture, or
switch matrix. Users can remove the PreAmp from the back panel and place it in a remote location
(such as in a light-tight enclosure or on the prober platen) to eliminate measurement problems due
to long cables. Platen mounts and triax panel mount accessories are available.
KTE Interactive Software Tools
KTE Interactive includes four software tools for operating and maintaining the Model 4200-SCS in
addition to the Windows operating system:
• The Keithley Interactive Test Environment (KITE) is the Model 4200-SCS Windows device characterization application. It provides advanced test definition, parameter analysis and graphing, and
automation capabilities required for modern semiconductor characterization. Built-in looping,
stress-measure capabilities, and data management enable many types of reliability testing.
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SEMICONDUCTOR
• Intuitive, point-and-click
Windows®-based environment
A Total System Solution
The Model 4200-SCS provides a total system solution for DC I-V, C-V, and pulse characterization and
reliability testing of semiconductor devices, test structures, and materials. This advanced parameter
analyzer provides intuitive and sophisticated capabilities for a wide variety of semiconductor tests.
The Model 4200-SCS combines unprecedented measurement speed and accuracy with an embedded
Windows-based PC and the Keithley Interactive Test Environment (KITE) to provide a powerful singlebox solution. KITE allows users to gain familiarity quickly with tasks such as managing tests and results
and generating reports. Sophisticated and simple test sequencing and external instrument drivers simplify performing automated device and wafer testing with combined I-V, C-V, and pulse measurements.
The exceptional low current performance of the Model 4200-SCS makes it the perfect solution for
research studies of single electron transistors (SETs), molecular electronic devices, and other nanoelectronic devices that require I-V characterization. The Model 4200-SCS can be used to make four-probe
van der Pauw resistivity and Hall voltage measurements, eliminating the need for a switch matrix and
user-written code. With remote preamps added, resistances well above 1012Ω can be measured.
The Model 4200-SCS is modular and configurable. The system supports up to nine Source-Measure
Units (SMUs) in any combination of medium and high power SMUs. A high-power SMU provides 1A/20W
capability. Also available are the C-V option and the pulse and scope pulse measure modules. The C-V
option includes the C-V Power package, which supports high power C-V measurements up to 400V and
300mA, up to 60V of differential DC bias, and quasistatic C-V measurements.
Lab grade DC Side
device
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characterization
DC I-V, C-V, and Pulse in One Test Environment
4200-SCS
Semiconductor Characterization System
DC I-V, C-V, and Pulse in One Test Environment
The Keithley Interactive Test
Environment (KITE) is designed to
let users understand device behavior quickly. When running a test
sequence, users can view results and
plots for completed tests while the
sequence is still running. As shown
here, multiple plots can be viewed
at the same time to get a complete
picture of device performance.
Ordering Information
4200-SCS/F
Flat Panel Display
Lab grade DC Side
device
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characterization
4200-SCS/C
Composite Front Bezel; requires
an external SVGA display
Accessories Supplied
Reference and User Manual
on CD-ROM
236-ILC-3 Interlock Cable, 3m
Note: All 4200-SCS systems and
instrument options are supplied
with required cables of 2m length.
Additional Instrumentation
4210-CVU
Integrated C-V Instrument
4205-PG2
Dual-Channel Pulse Generator
4200-SCP2
Dual-Channel Digital Oscilloscope
4200-SCP2HR
High Resolution, Dual Channel
Integrated Oscilloscope
4200-PIV-A
Complete Pulse I-V Package
for leading edge CMOS
4200-PIV-Q
Pulse I-V Package with Q point
and dual-channel pulsing
4200-FLASH
Non-volatile Memory Test Package
4200-SCP2-ACC
Optional Scope Probe
SEMICONDUCTOR
Related Products
707A
Semiconductor Switching
Matrix Mainframe
708A
Single Slot Switching
Matrix Mainframe
4200-SCP2-ACC
70MHz Scope Probe
7072
8×12 Semiconductor
Matrix Card
7072-HV 8×12 High Voltage
Semiconductor Matrix Card
7174A
8×12 High Speed, Low
Current Matrix
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• Keithley User Library Tool (KULT)—Allows test engineers to integrate custom algorithms into KITE
using Model 4200-SCS or external instruments.
• Keithley Configuration Utility (KCON)—Allows test engineers to define the configuration of GPIB
instruments, switch matrices, and analytical probers connected to the Model 4200-SCS. It also
­provides ­system diagnostics functions.
• Keithley External Control Interface (KXCI)—The Model 4200-SCS application for controlling the
Model 4200-SCS from an external computer via the GPIB bus.
KITE Projects
A project is a collection of related tests, organized in a hierarchy that parallels the physical layout
of the devices on a wafer. KITE operates on projects using an interface called the project navigator.
The project navigator simplifies organizing test files, test execution, and test sequencing. The project
navigator organizes tests into a logical hierarchy presented in a browser style format. This structure
allows users to define projects around wafer testing:
• The project level organizes subsites and controls wafer looping ­execution.
• The subsite level organizes devices and controls subsite test sequencing.
• The device level organizes test modules, manages test module libraries, and controls device test
sequencing.
• The test module level performs tests, analyzes data, and plots results.
Prober Control
Keithley provides integrated prober control for supported analytical probers when test sequencing is
executed on a user-programmable number of probe sites on a wafer. Contact the factory for a list of
supported analytical probers. A manual prober mode prompts the operator to perform prober operations during the test sequence.
Test Sequencing
KITE provides “point and click” test sequencing on a device, a group of devices (subsite, module, or
test element group), or a user-programmable number of probe sites on a wafer. One sequence can
include DC I-V, C-V, and pulse tests.
Keithley User Library Tool (KULT)
The Keithley User Library Tool is an open environment that provides you with the flexibility to create your own custom routines as well as use existing Keithley and third-party C-­language subroutine
libraries. User library ­modules are accessed in KITE through User Test Modules. Factory supplied
libraries provide up and running capability for supported instruments. Users can edit and compile
subroutines, then integrate libraries of sub­routines with KITE, allowing the Model 4200-SCS to
control an entire test rack from a single user interface. KULT is derived from the Keithley S600 and
Series S400 Parametric Test Systems. This simplifies migration of test libraries between the Model
4200-SCS and Keithley parametric test ­systems.
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4200-SCS
Semiconductor Characterization System
DC I-V, C-V, and Pulse in One Test Environment
4210-CVU: Selected C-V Specifications
4210-CVU C-V Instrument
C-V measurements are as easy to perform as I-V measurements with the
integrated C-V instrument. This optional capacitance-voltage instrument
performs capacitance measurements from femtoFarads (fF) to nanoFards
(nF) at frequencies from 1kHz to 10MHz. The C-V option includes a new
Power package that supports:
Measurement Functions
Measurement parameters: Cp-G, Cp-D, Cs-Rs, Cs-D, R-jX, Z-theta.
Ranging: Auto and fixed.
Frequency range: 1kHz to 10MHz.
Source Frequency Accuracy: ±0.1%.
Signal output level Range: 10mV rms to 100mV rms.
Resolution: 1mV rms.
Accuracy: ±(10.0% + 1mV rms) unloaded (at rear panel).
• High power C-V measurements up to 400V (200V per device terminal)—for testing high power devices, such as MEMs, LDMOS devices,
displays, etc.
• DC currents up to 300mA—for measuring capacitance when a transistor
is on.
DC Bias Function
DC voltage bias Range: ±30V on both C-V HI and C-V LO (±60V differential).
Resolution: 1.0mV.
Accuracy: ±(0.5% + 5.0mV) unloaded.
Maximum DC Current: 10mA.
The innovative design of the 4200-SCS has eight patents pending and is
complemented by the broadest C-V test and analysis library available in any
commercial C-V measurement solution. It also supplies diagnostic tools
that ensure the validity of your C-V test results.
Sweep Characteristics
With this system, you can configure linear or custom C-V and C-f sweeps
with up to 4096 data points. In addition, through the open environment
of the 4200-SCS, you can modify any of the included tests, such as:
Available sweep parameters: DC bias voltage, frequency, AC drive level.
Sweep type: Linear, Custom.
Sweep direction: Up sweep, Down sweep.
Number of measurement points: 4096 points.
• C-V, C-t, and C-f measurements and analysis of:
C-V Power Package
Typical Performance Characteristics
– New! Complete solar cell libraries, including DLCP
Measurement Parameters: Cp-Gp, DCV, timestamp.
Ranging: 1pF to 1nF.
Measurement Terminals: 2-wire SMA, with BNC adapters.
Test Signal: 100kHz to 10MHz, 10mV to 100mV.
DC Voltage Source: ±200V with 5mV resolution (±400V differential).
DC Current: 100mA or 300mA maximum.
Typical Cp Accuracy @ 1MHz: 1.0%.
DC Current Sensitivity: 10nA/V.
SMU Bias Terminals Supported: 4.
– High and low k structures
– MOSFETs
– BJTs
– Diodes
– III-V compound devices
– Carbon nanotube (CNT) devices
Lab grade DC Side
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Test Signal
Ramp Rate Quasistatic C-V
Typical Performance Characteristics
• Doping profiles, TOX, and carrier lifetime tests
• Junction, pin-to-pin, and interconnect capacitance measurements
Measurement Parameters: Cp, DCV, timestamp.
Ranging: 1pF to 1nF.
Measurement Terminals: Triaxial guarded.
Ramp Rate: 0.1V/s to 1V/s.
DC Voltage: ±200V.
Typical Cp Accuracy: 5% at 1V/s ramp rate.
SEMICONDUCTOR
The C-V instrument integrates directly into the Model 4200-SCS chassis.
It can be purchased as an upgrade to existing systems or as an option for
new systems.
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4200-SCS
Semiconductor Characterization System
DC I-V, C-V, and Pulse in One Test Environment
Lab grade DC Side
device
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characterization
Dual-Channel Pulse Generator
The optional, integrated dual-channel pulse generator adds pulsing to the
Model 4200-SCS’s DC source and measure capabilities. It supports voltage
pulses as short as 10ns or up to ±20V (into 50Ω). Two pulse generators on
one card provides you with the flexibility to apply pulses to two points on
a DUT, such as the gate and the drain, simultaneously. The 4200-SCS can
support up to four synchronized cards per system for eight pulse channels.
The 4205-PG2 supports two waveform generation modes in addition to
the standard pulse mode. The Arbitrary Waveform mode can generate
complex waveforms made up of up to 256K data points at clock speeds up
to 25MHz. The Segment ARB™ mode (patent pending) simplifies creating,
storing, and generating complex waveforms made from up to 1024 userdefined line segments. Each segment can have a different duration, allowing exceptional waveform generation flexibility.
Using a supplied User Test Module, it is simple to incorporate pulse generation into KITE test sequences. The pulse generator can also be used as
a stand-alone pulse generator using the pulse generator’s Window’s GUI.
This GUI can control a wide range of variables, including pulse frequency,
duty cycle, rise/fall time, amplitude, offset, and the ability to trigger single
pulses and/or pulse chains.
Key Pulse Generator SPECIFICATIONS
The dual-channel pulse generator has a
wide range of uses. Typical ­applications
Frequency Range 1Hz–50MHz
include:
Programmable from 10ns to near DC
Pulse Width
• Charge pumping to characterize interDual independent channels
Channels
face state densities in MOSFET devices
Pulse Amplitude 100mV–20V into 50Ω,
100mV–40V into 1MΩ
Range
• Using AC stress pulses of varying
frequencies to simulate real-world
Pulse width, duty cycle, rise time,
Programmable
fall time, amplitude, offset
Parameters
AC signals applied to clocked devices
• Basic clock generation for test ­vectoring
and failure analysis
• Digital triggering
The pulse generator can be ­purchased as an upgrade to existing systems
(KTEI ­version 6.0 or above required) or as an option for new systems.
Dual-Channel Digital Oscilloscope
The optional dual-channel digital oscilloscopes place more than the performance of a bench-top oscilloscope into your 4200-SCS. They also support
time-domain measurements of pulse waveforms and monitor the reactions
of devices under test to those pulses. Some of the features of these oscillo­
scopes include: a broad selection of acquisition modes, triggers, measurements, calculations, and up to four reference waveforms.
SEMICONDUCTOR
The dual-channel oscilloscopes integrate directly into the Model 4200-SCS
chassis. Either can be purchased as an upgrade to existing systems (KTEI
version 6.0 or above required) or as an option for new systems.
Key Oscilloscope SPECIFICATIONS
Bandwidth
Channels
Maximum Sample Rate
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4200-SCP2
4200-SCP2HR
(High Resolution)
DC to 750MHz
DC to 250MHz
2
2
1.25GS/s per channel
200MS/s per channel
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4200-SCS
Semiconductor Characterization System
DC I-V, C-V, and Pulse in One Test Environment
1-year factory warranty extended to 3 years
from date of shipment
4200-3Y-CAL
3 (Z540-1 compliant) calibrations within 3
years of purchase for Model 4200-SCS*
4200-FLASH-3Y-EW 1-year factory warranty extended to 3 years
from date of shipment
4200-FLASH-3Y-CAL 3 (Z540-1 compliant) calibrations within 3
years of purchase for Model 4200-FLASH*
4200-PA-3Y-EW
1-year factory warranty extended to 3 years
from date of shipment
4200-PIV-A-3Y-EW 1-year factory warranty extended to 3 years
from date of shipment
4200-PIV-A-3Y-CAL 3 (Z540-1 compliant) calibrations within 3
years of purchase for Model 4200-PIV-A*
4200-PIV-Q-3Y-EW 1-year factory warranty extended to 3 years
from date of shipment
4200-PIV-Q-3Y-CAL 3 (Z540-1 compliant) calibrations within 3
years of purchase for Model 4200-PIV-Q*
4200-SCP2-3Y-EW 1-year factory warranty extended to 3 years
from date of shipment
4200-SCP2-3Y-CAL 3 (Z540-1 compliant) calibrations within 3
years of purchase for Model 4200-SCP2*
4205-PG2-3Y-EW
1-year factory warranty extended to 3 years
from date of shipment
4205-PG2-3Y-CAL 3 (Z540-1 compliant) calibrations within 3
years of purchase for Model 4205-PG2*
IMPL-4200
1-day on-site implementation of TRN-42001-C
TRN-4200-1-C
Course: Optimizing the 4200-SCS for Your
Application
*Not available in all countries
Application Packages
Optional application packages combine specific sets of hardware, interconnect, and Keithley
developed code. They are described in the following pages.
Application packages designed for specific needs
4200-PIV-A
For charge trapping
and isothermal testing
in lower technologies
such as CMOS
Device
FET
4200-PIV-Q
For higher power pulse
testing in III-V, LDMOS,
and other higher
frequency and higher
power FET devices
HEMT, FET
Technology
Advanced CMOS
III-V/LDMOS
Source Method
Pulse gate, DC bias on
drain
Measure Method
Pulse I-V and DC
Measurements
Gate voltage, Drain
voltage and current
Pulse Width Range1
Unique Capability
40ns to 150ns
Description
8-bit, 1 gigasample/s
measure rate, good
for advanced CMOS
Pulse I-V testing and
high speed single-pulse
charge trapping
4200-FLASH
For testing FLASH
memory devices (NOR
and NAND, including
MLC technologies)
Floating gate FET
NAND, NOR,
nonvolatile memory
Dual pulse for gate and Pulse gate, drain,
drain with quiescent
source, and substrate
point testing
Pulse I-V and DC
DC only
Gate voltage and
current, Drain voltage
and current
500ns to 999ms
Gate voltage and
current, Drain voltage
and current
250ns to 1s
Dual-channel,
quiescent point pulsing
for scaled-down RF
transistors
One multi-level pulse
channel per DUT
pin, integrated High
Endurance Output
Relay supports
endurance testing of
NAND and NOR
Lab grade DC Side
device
Text
characterization
Services Available
4200-3Y-EW
SEMICONDUCTOR
1. Full Width Half Maximum (FWHM)
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4200-SCS
Semiconductor Characterization System
DC I-V, C-V, and Pulse in One Test Environment
4200-PIV-A: Pulse I-V Solution Package
The 4200-PIV-A Pulse I-V package provides a turnkey pulse I-V solution. It is a comprehensive package
of hardware and software, designed to integrate seamlessly with the Model 4200-SCS workstation. It
combines the dual-channel pulse generator, dual-channel digital oscilloscope, specialized interconnect, and patented Pulse I-V software.
Lab grade DC Side
device
Text
characterization
Poly Si
Gate Electrode
Upper Interfacial Region
High κ Film
Lower Interfacial Region
Bulk Si
Pulse I-V measurement capabilities are
in­creasingly critical for high κ gate stack
characterization and isothermal testing of
new devices.
The Pulse I-V software controls sourcing (from the pulse generator) and data acquisition (from the
oscilloscope) to automate a variety of Pulse I-V tests. Running in the Model 4200-SCS’s proven interface, the Pulse I-V software provides instrument setup and control, data storage, and presentation.
The innovative software includes both cable compensation and a solution to the load-line effect,
producing pulsed-based I-V transistor curves, such as the V DS-ID family of curves and VGS-ID for voltage
threshold extraction.
The Pulse I-V bundle allows the Model 4200-SCS to support a wide range of applications, such as
charge trapping for high κ dielectric characterization, isothermal testing of devices and materials
subject to self-heating effects, charge pumping, AC stress testing, clock generation, and mixed signal
device testing.
The specialized interconnect
solves most of the problems
encountered in high speed
pulse testing, such as:
DC Source
• Combining pulse and DC
sources to a single DUT
pin to permit both DC and
pulse characterization without recabling or switching
DC
DC Source
• Impedance matching for
pulse integrity to minimize
reflection
SEMICONDUCTOR
To minimize the signal reflections due to poor
impedance matching that often plague “doit-yourself” pulse testing systems, Keithley’s
Pulse I-V package includes a system interconnect setup that provides AC/DC coupling
to connect the pulse generator and the DC
instrumentation.
• Straightforward cabling and
connection to the DUT for
easy setup
DC
Trigger
NEW! 4200-MMPC-X
Multi-Measurement Cable
Set allows easy changeover
from I-V to C-V to PIV
AC+DC
Out
Dual-Channel
Pulse Generator
The Pulse I-V package includes everything needed to implement a turnkey system for pulsed I-V testing of leading-edge
devices and materials. Pieces included in the package are:
• Integrated dual-channel pulse generator
• Dual-channel digital oscilloscope
• Pulse I-V control software (patent pending)
• Interconnect designed to minimize the signal reflections
common to pulse I-V testing (patent pending)
• All required connectors and cables
• Sample projects for:
- Pulse I-V isothermal testing of FinFETs, SOI devices, and
other devices with self-heating problems
- Charge-trap testing for high κ gate stack characterization
Pulse testing can characterize a device with ­little to no isothermal
degradation.
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Dual-Channel
Digital
Oscilloscope for
Measurement
AC+DC
Out
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4200-SCS
Semiconductor Characterization System
DC I-V, C-V, and Pulse in One Test Environment
4200-PIV-Q: Pulsed I-V, Q Point,
Dual-Channel, Pulsing Package
4200-FLASH: Non-Volatile Memory Test Package
The optional 4200-FLASH application package tests single FLASH memory
cells or small arrays quickly and easily using four (or up to eight optional)
independent, but synchronized, multi-level pulse channels. It includes all
the code and interconnect needed to perform a standard set of FLASH
memory tests for NAND and NOR technologies, such as characterization,
endurance, and disturb tests. It also supplies the higher pulse voltages that
are important for MLC technologies.
The 4200-PIV-Q package is designed for quiescent point pulsing of scaleddown RF transistors, such as HEMT and FET devices in III-V or LDMOS
technologies. It can be used for a variety of large signal tests on high
frequency transistors as well as for investigation of dispersion phenomena
and device performance at speed.
This package includes multiple 4205-PG2 pulse generators and the
4200-SCP2HR oscilloscope and offers capabilities such as dual-channel
pulsing (for pulsing on both the gate and the drain simultaneously), higher
power pulsing than the 4200-PIV-A package, and pulsing from a non-zero
quiescent point. Some of its features include:
• Elimination or characterization
of thermal issues
• Dual-channel pulse I-V testing
for III-V and LDMOS:
• Ability to compare DC vs. Pulse
for dispersion effects
– Pulse voltage on gate and
drain
• Software and interconnect for
Quiescent point testing
– Measure gate current, drain
voltage, and current
• Test code for typical characterization tests
– ±20V pulses for the gate,
±38V pulses for the drain
• Pulse widths adjustable from
500ns to near-DC (999ms)
• Ability to use the same setup for
performing true DC tests without re-cabling the system
4200-FLASH takes advantage of the new patent-pending Segment ARB™
waveform generator, which makes typical FLASH program/erase cycles
simple to set up and run on a single pulse channel. It also combines the
Segment ARB waveform generator with the in-line high endurance relay for
Endurance tests. The tight control of this output relay can shorten lifetime
test times significantly.
4200-FLASH provides four (or up to Other 4200-FLASH features
eight optional) channels of multiinclude:
level pulse that support:
• Code for performing tests on
• ±40V pulsing into a high impefloating gate FLASH and embeddance pin (±20V into 50Ω)
ded NVM memory
• High endurance output relay
• Performs linear or log-based DC
which provides fast open/close
measurements for Disturb and
for pin isolation during an erase
Endurance tests based on the
pulse
number of program/erase cycles
• Pulse widths from 200ns to 1s
• Controls switching between
program/erase and DC charac• Up to 25 pulse levels (100 pulse
terization without using a switch
segments)
matrix
• Full support for multi-level cell
NEW! 4200-MMPC-X
Multi-Measurement Cable Set
technology with up to ±40V
allows easy changeover from
pulsing on the gate
I-V to C-V to PIV
• Solid state relays with high
endurance output relay (HEOR)
capability for pin disconnect
within Program+Erase waveform
Some of the specific tests are:
• V DS–ID: Both pulse and DC
• VGS–ID: Both pulse and DC
• Single-pulse scope view, which is
useful for setup validation, pulse
width optimization, and prototyping of novel pulse tests
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SEMICONDUCTOR
Typical NOR FLASH gate program/erase cycle
Lab grade DC Side
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Text
characterization
Easy setup for program/erase cycles
4200-SCS
Semiconductor Characterization System
DC I-V, C-V, and Pulse in One Test Environment
OPTIONAL APPLICATION PACKAGES
4200-PIV-A Complete Pulse I-V Package for leading edge CMOS
4200-PIV-Q Pulse I-V Package with Q point and dual-channel
pulsing
4200-FLASH Non-volatile Memory Test Package
OPTIONAL SWITCHING SYSTEMS AND CARDS
Systems
707A
6-Slot Switching Matrix Mainframe
708A
Single-Slot Switching Matrix Mainframe
Cards
7071
7071-4
7072
7072-HV
7075
7173-50
7174A
8×12, General Purpose, Matrix Card
Dual 4×12, General Purpose, Matrix Card
8×12, Semiconductor Matrix Card
8×12, High Voltage, Semiconductor Matrix Card
Eight 1×12, Two-Pole, Multiplexer Card
4×12, Two-Pole, High Frequency, Matrix Card
8×12, High Speed, Low Leakage Current, Matrix Card
SEMICONDUCTOR
Lab grade
Model
DC Side
device
specifications
Text
characterization
Optional Instrumentation and Accessories
OPTIONAL INSTRUMENTATION
4210-CVU Integrated C-V Instrument
4200-SMU Medium Power Source-Measure Unit for 4200-SCS.
100mA to 100fA, 200V to 1μV, 2 Watt
4210-SMU High Power Source-Measure Unit for 4200-SCS. 1A
to 100fA, 200V to 1μV, 20 Watt
4200-PA Remote PreAmp Option for 4200-SMU and 4210SMU, extends SMU to 0.1fA resolution
4205-PG2 Dual-Channel Pulse Generator
4200-SCP2 Dual-Channel Integrated Oscilloscope
4200-SCP2HR High Resolution, Dual-Channel Integrated
Oscilloscope
4200-SCP2-ACC Optional Scope Probe
1.888.KEITHLEY (U.S. only)
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OPTIONAL ACCESSORIES
Connectors and Adapters
CS-565 Female BNC to Female BNC Adapter
CS-701 BNC Tee Adapter (female, male, female)
CS-719 3-lug Triax Jack Receptacle
CS-1247 SMA Female to BNC Male Adapter
CS-1249 SMA Female to SMB Plug Adapter
CS-1251 BNC Female to SMB Plug Adapter
CS-1252 SMA Male to BNC Female Adapter
CS-1281 SMA Female to SMA Female Adapter
CS-1382 Female MMBX Jack to Male SMA Plug Adapter
CS-1390 Male LEMO Triax to Female SMA Adapter
CS-1391 SMA Tee Adapter (female, male, female)
CS-1479 SMA Male to BNC Male Adapter
237-BAN-3A
Triax Cable Center Conductor terminated in a
safety banana plug
237-BNC-TRX Male BNC to 3-lug Female Triax Adapter
237-TRX-BAR 3-lug Triax Barrel Adapter (female to female)
237-TRX-T
3-slot Male to Dual 3-lug Female Triax Tee
Adapter
7078-TRX-BNC 3-Slot Male Triax to BNC Adapter
7078-TRX-GND 3-Slot Male Triax to Female BNC Connector
(guards removed)
Cables and Cable Sets
NOTE: All 4200-SCS systems and instrument options are supplied
with required cables, 2m (6.5 ft.) length.
CA-19-2 BNC to BNC Cable, 1.5m
CA-404B SMA to SMA Coaxial Cable, 2m
CA-405B SMA to SMA Coaxial Cable, 15cm
CA-406B SMA to SMA Coaxial Cable, 33cm
CA-446A SMA to SMA Coaxial Cable, 3m
CA-447A SMA to SMA Coaxial Cable, 1.5m
CA-451A SMA to SMA Coaxial Cable, 10.8cm
CA-452A SMA to SMA Coaxial Cable, 20.4cm
236-ILC-3 Safety Interlock Cable, 3m
237-ALG-2 Low Noise Triax Input Cable terminated with 3
alligator clips, 2m
4210-MMPC-C Multi-Measurement (I-V, C-V, Pulse) Prober Cable
Kit for Cascade Microtech 12000 prober series
4210-MMPC-S Multi-Measurement (I-V, C-V, Pulse) Prober Cable
Kit for SUSS MicroTec PA200/300 prober series
4200-MTRX-* Ultra Low Noise SMU Triax Cable: 1m, 2m, and 3m
options
4200-PRB-C SMA to SSMC Y Cable with local ground
4200-RPC-* Remote PreAmp Cable: 0.3m, 2m, 3m, 6m options
4200-TRX-* Ultra Low Noise PreAmp Triax Cable: 0.3m, 2m,
3m options
7007-1
Double-Shielded Premium GPIB Cable, 1m
7007-2
Double-Shielded Premium GPIB Cable, 2m
A
G R E A T E R
Fixtures
8101-4TRX 4-Pin Transistor Fixture
8101-PIV Pulse I-V Demo Fixture
LR8028 Component Test Fixture
Cabinet Mounting Accessories
4200-RM
Fixed Cabinet Mount Kit
Remote PreAmp Mounting Accessories
4200-MAG-BASE Magnetic Base for mounting 4200-PA on a
probe platen
4200-TMB
Triaxial Mounting Bracket for mounting 4200PA on a triaxial mounting panel
4200-VAC-BASE Vacuum Base for mounting 4200-PA on a
prober platen
Computer Accessories
4200-MOUSE
Microsoft Ambidextrous 2 Button Mouse (Note:
A pointing device is integrated with the 4200SCS keyboard.)
Software
ACS-BASIC
Component Characterization Software
Drivers
4200ICCAP-6.0 IC-CAP Driver and Source Code for 4200-SCS:
UNIX/Windows
Other Accessories
EM-50A
Modified Power Splitter
TL-24 SMA Torque Wrench
4200-CART
Roll-Around Cart for 4200-SCS
4200-CASE
Transport Case for 4200-SCS
4200-MAN
Printed Manual Set
Adapter, Cable, and Stabilizer Kits
4200-CVU-PWR CVU Power Package for ±200V C-V
4200-CVU-PROBER-KIT
Accessory Kit for connection to popular
analytical probers
4200-Q-STBL-KITAddresses oscillation when performing pulse
I-V tests on RF transistors
SUPPLIED ACCESSORIES
Accessories Supplied with each Model 4210-CVU:
CA-447A SMA Cables, male to male, 100Ω, 1.5m (5 ft.) (4)
CS-1247 Female SMA to Male BNC Adapters (4)
CS-701 BNC Tee Adapters (2)
TL-24 SMA Torque Wrench
Accessories Supplied with each Model 4200-SMU
or 4210-SMU:
4200-MTRX-2 Two Ultra Low Noise SMU Triax Cables, 2m (6.6
ft). Not included with SMUs configured with a
4200-PA Remote PreAmp.
4200-TRX-2 Ultra Low Noise PreAmp Triax Cable, 2m (6.6 ft).
Two supplied for Ground Unit. Two supplied in
replacement of 4200-MTRX-2 cables for each SMU
configured with a 4200-PA.
4200-RPC-2 Remote PreAmp Cable, 2m (6.6 ft). One supplied
for each PreAmp.
236-ILC-3 Interlock Cable, 3m (10 ft)
Line Cord
NEMA 5-15P for 100-115VAC or CEE 7/7
(Continental European) for 240VAC
M E A S U R E
O F
C O N F I D E N C E
4200-SCS
Semiconductor Characterization System
DC I-V, C-V, and Pulse in One Test Environment
Current
RANGE1
4210-SMU2
High
Power
SMU
4200-SMU2
Medium
Power
SMU
4200-SMU and
4210-SMU with
optional
4200-PA PreAmp
1 A
100mA
100mA
10mA
1mA
100 µA
10 µA
1 µA
100 nA
10 nA
1 nA
100 pA
10 pA
1 pA
Max.
VOLTAGE
21 V
210 V
21 V
210 V
210 V
210 V
210 V
210 V
210 V
210 V
210 V
210 V
210 V
210 V
MEASURE
Resolution3
1 µA
100 nA
100 nA
10 nA
1 nA
100 pA
10 pA
1 pA
100 fA
10 fA
3 fA
1 fA
0.3 fA
100 aA
SOURCE
Accuracy
±(% rdg + amps)
0.100% +200µA
0.045% + 3µA
0.045% + 3µA
0.037% +300nA
0.035% + 30nA
0.033% + 3nA
0.050% +600pA
0.050% + 100pA
0.050% + 30pA
0.050% + 1pA
0.050% + 100 fA
0.100% + 30 fA
0.500% + 15 fA
1.000% + 10 fA
Accuracy
±(% rdg + amps)
0.100% +350 µA
0.050% + 15 µA
0.050% + 15 µA
0.042% + 1.5 µA
0.040% +150 nA
0.038% + 15 nA
0.060% + 1.5 nA
0.060% +200 pA
0.060% + 30 pA
0.060% + 3 pA
0.060% +300 fA
0.100% + 80 fA
0.500% + 50 fA
1.000% + 40 fA
Resolution3
50 µA
5 µA
5 µA
500 nA
50 nA
5 nA
500 pA
50 pA
5 pA
500 fA
50 fA
15 fA
5 fA
1.5 fA
Specification Conditions
Specifications are the performance standards against
which the Models 4200-SMU, 4210-SMU, and 4200-PA
are tested. The measurement and source accuracy are
specified at the termina­tion of the ­supplied cables.
• 23°C ±5°C, within 1 year of calibration, RH
between 5% and 60%, after 30 minutes of warm-up.
• Speed set to NORMAL.
• Guarded Kelvin connection.
• ±1°C and 24 hours from ACAL.
ModelModel
4200-SCS
Side
specifications
Text
specifications
DC SMU Current SPECIFICATIONS
Voltage Compliance: Bipolar limits set with a single value between full scale and 10% of selected voltage range.
DC SMU Voltage SPECIFICATIONS
Voltage
RANGE1
200 V 4
20 V
2 V
200mV
Max.
Current
4200-SMU
10.5 mA
105 mA
105 mA
105 mA
4210-SMU
105 mA
1.05
A
1.05
A
1.05
A
MEASURE
Resolution3
200 µV
20 µV
2 µV
1 µV
SOURCE
Accuracy
±(% rdg + volts)
0.015% + 3 mV
0.01 % + 1 mV
0.012% +150 µV
0.012% +100 µV
Resolution3
5mV
500 µV
50 µV
5 µV
Accuracy
±(% rdg + volts)
0.02% + 15mV
0.02% + 1.5mV
0.02% +300 µV
0.02% +150 µV
Current Compliance: Bipolar limits set with a single value between full scale and 10% of selected current range.
NOTES
1. All ranges extend to 105% of full scale.
2. Specifications apply on these ranges with or without a
4200-PA.
3. Specified resolution is limited by fundamental noise limits.
Measured resolution is 61⁄2 digits on each range. Source
resolution is 41⁄2 digits on each range.
4. Interlock must be engaged to use the 200V range.
Supplemental DC SMU Information
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Remote Sense: <10Ω in series with FORCE terminal not to
exceed a 5V difference between FORCE and SENSE terminals.
±30V maximum between COMMON and SENSE LO.
Maximum load Capacitance: 10nF.
Maximum GUARD Offset Voltage: 3mV from FORCE.
GUARD Output Impedance: 100kΩ.
Maximum GUARD Capacitance: 1500pF.
Maximum shield Capacitance: 3300pF.
4200-SMU and 4210-SMU Shunt resistance (FORCE to
COMMON): >1012Ω (100nA–1µA ranges).
4200-PA Shunt resistance (FORCE to COMMON): >1016Ω
(1pA and 10pA ranges), >1013Ω (100pA–100nA ranges).
Output Terminal Connection: Dual triaxial connect­ors
for 4200-PA, dual mini-triaxial connectors for 4200-SMU and
4210-SMU.
Noise Characteristics (typical):
Voltage Source (rms):
0.01% of output range.
Current Source (rms):
0.1% of output range.
Voltage Measure (p-p): 0.02% of measurement range.
Current Measure (p-p): 0.2% of measurement range.
Maximum Slew Rate: 0.2V/µs.
A
G R E A T E R
M E A S U R E
SEMICONDUCTOR
Supplemental information is not warranted but provides useful infor­mation about the Models 4200-SMU, 4210-SMU, and
4200-PA.
Compliance Accuracy:
Voltage compliance equals the voltage source specifications.
Current compliance equals the current source specifications.
Overshoot: <0.1% typical.
Voltage: Full scale step, resistive load, and 10mA range.
Current: 1mA step, R L = 10kΩ, 20V range.
Range Change Transient:
Voltage Ranging: <200mV.
Current Ranging: <200mV.
Accuracy Specifications: Accuracy specifications are multiplied by one of the following factors, depending upon the
ambient temperature and humidity.
% Relative Humidity
Temperature
5–60
60–80
10°–18°C
×3
×3
18°–28°C
×1
×3
28°–40°C
×3
×5
O F
C O N F I D E N C E
4200-SCS
Semiconductor Characterization System
DC I-V, C-V, and Pulse in One Test Environment
Model 4200-SCS
Side Text
specifications
Additional DC SMU Specifications
General
Max. Output Power: 22 watts for 4210-SMU and 2.2 watts
for 4200-SMU (both are four-quadrant source/sink operation).
DC Floating Voltage: COMMON can be floated ±32 volts
from chassis ground.
Differential Voltage Monitor
Voltage Monitor (SMU in VMU mode)
Ground Unit
Voltage Range
200 V
20 V
2 V
200mV
Measure
Resolution
200 µV
20 µV
2 µV
1 µV
Measure Accuracy
±(%rdg + volts)
0.015% + 3 mV
0.01% + 1 mV
0.012% +110 µV
0.012% + 80 µV
Input Impedance: >1013Ω.
Input Leakage Current: <30pA.
Measurement Noise: 0.02% of measure­ment range (rms).
Differential Voltage Monitor is available by measuring with two
SMUs in VMU mode or by using the low sense terminal provided
with each SMU.
Voltage error when using the ground unit is included in the
4200-SMU, 4210-SMU, and 4200-PA specifications. No additional
errors are intro­duced when using the ground unit.
Output Terminal Connection: Dual triaxial, 5-way binding post.
Maximum Current: 2.6A using dual triaxial connection; 8.5A
using 5-way binding posts.
Load Capacitance: No limit.
Cable Resistance: FORCE ≤1Ω, SENSE ≤10Ω.
4205-PG2 Dual-Channel Pulse Generator Specifications 1, 2
PULSE/LEVEL3
TIMING
High Speed
–5V to +5V
–10V to +10V
±(3% + 50 mV)
1 mV
2 mV
SMA
50Ω Nominal
1%
±200 mA
High Voltage
–20V to +20V
–40V to +40V
±(3% + 100 mV)
5 mV
10 mV
SMA
50Ω Nominal
1%
±800 mA
Frequency Range
Timing Resolution
RMS Jitter (period, width)
Period Range
Accuracy
Pulse Width Range
Accuracy
Programmable
Transition Time (0–100%)
50 Ω into 50 Ω
VOUT
50 Ω into 1 MΩ
VOUT
Accuracy
Amplitude/Level 50 Ω into 50 Ω
50 Ω into 1 MΩ
Resolution
Output Connectors
Source Impedance
Accuracy
Short Circuit Current
Current into 50Ω Load
±100 mA typical
±400 mA typical
(at full scale)
±(0.1% + 5 mV) RMS typical ±(0.1% + 5 mV) RMS typical
Baseline Noise
±5% of amplitude ±20mV
±5% of amplitude ±80mV
Overshoot/Pre-shoot/Ringing
Programmable limit to protect the DUT
Output Limit
Accuracy
Transition Slew Rate4
Linearity
Typical Minimum
Transition Time 10–90%
Pulse Vp-p (into 50Ω)
Solid State Relay
SEMICONDUCTOR
Temperature Range
Operating: +10° to +40°C.
Storage: –15° to +60°C.
Humidity Range
Operating: 5% to 80% RH, non-condensing.
Storage: 5% to 90% RH, non-condensing.
Altitude
Operating: 0 to 2000m.
Storage: 0 to 4600m.
Power Requirements: 100V to 240V, 50 to 60Hz.
Maximum VA: 1000VA.
Regulatory Compliance:
Safety: Low Voltage Directive 73/23/EEC.
EMC: Directive 89/336/EEC.
Dimensions: 43.6cm wide × 22.3cm high × 56.5cm deep
(17 5⁄32 in × 83⁄4 in × 221⁄4 in).
Weight (approx.): 29.7kg (65.5 lbs) for typical configuration of four SMUs.
I/O Ports: USB, SVGA, Printer, RS-232, GPIB, Ethernet,
Mouse, Keyboard.
20ns
High Speed Range
Pulse Period
Operating Region
70ns
10 ns–33 ms
100 ns–33 ms
±1% for transition time
±1% for transition time
<100 ns
<1 µs
3% for transition time
3% for transition time
<100 ns
<150 ns
<15 ns
<150 ns
Pulse Period and width are variable in 10 ns steps without
any output glitches or dropouts
Open or
close time
100 µs
100 µs
Trigger Output Impedance: 50Ω.
Trigger Output Level: TTL.
Trigger In Impedance: 10kΩ.
Trigger In Level: TTL.
Trigger In Transition Timing, maximum: <100ns.
Trigger In to Pulse out delay: 560ns.
Trigger Synchronization/Jitter5: <8ns.
Not
Permitted
3V
High Voltage
1 Hz to 2 MHz
10 ns
0.01 % + 200 ps typical
500 ns to 1 s
±1%
250ns to (period – 100ns)
±(3% + 5ns)
TRIGGER
70ns
10V
High Speed
1 Hz to 50 MHz
10 ns
0.01 % + 200 ps typical
20 ns to 1 s
±1%
10ns to (period – 10ns)
±(3% + 200 ps)
Period
1s
Notes
Figure 1. Permitted area of operation.
1. Unless stated otherwise, all specifications assume a 50Ω termination.
2. Maximum number of PG2 cards in the 4200 chassis is 4.
3. Level specifications are valid after 50ns typical settling time (after slewing) for the high speed mode and after
500ns typical settling time (after slewing) for the high voltage mode into a 50Ω load.
4. Specifications apply to a 10–90% transition, typical. Minimum slew rate for high speed range = 724mV/ms. For
high voltage range = 2.71V/ms, which applies to both the standard pulse and Segment ARB™ mode.
5. For multiple 4205-PG2 cards, when using appropriate cabling and the “trigger per waveform” trigger mode.
All specifications apply at 23° ±5°C, within one year of calibration, RH between 5% and 60%, after 30 minutes of
warmup.
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G R E A T E R
M E A S U R E
O F
C O N F I D E N C E
4200-SCS
Semiconductor Characterization System
DC I-V, C-V, and Pulse in One Test Environment
4200-PIV-A Pulse I-V Option Specifications1
Channels: 2.
TYPICAL PULSE PERFORMANCE (with 4205 Remote Bias Tee4):
Measurement Accuracy: <4% of signal ±1mV.
Maximum Current Measure: 100mA.
Resolution: 100nA 2.
Offset: <500nA.
Sample Rate: 1GS/s.
Duty Cycle: <0.1%.
DC Offset: ±200V.
Minimum Transition Time (10–90%): <15ns.
Pulse Source Voltage Range: 0 to ±5V into gate.
Pulse Width: 40ns to 150ns.
SMU Typical DC Performance (with 4205 Remote Bias Tee):
Leakage: 1–10nA/V3.
Noise: 1–10nA RMS.
Maximum Voltage: 210V (>40V requires safety interlock and related precautions).
Maximum Current: 0.5A.
4200 REMOTE BIAS TEE TYPICAL PERFORMANCE:
Band Pass: 3.5kHz–300MHz (3dB).
Power Divider Max Power Input: 0.125W DC.
ANALOG INPUT1
4200-SCP2HR
2
DC to 250 MHz, typical
DC to 125 MHz, typical
0.05, 0.1, 0.25, 0.5, 1, 2, 5,
10 (Vp-p)
0.25, 0.5, 1.25, 2.5, 5, 10, 25,
50 (Vp-p)
< ±0.25% of full scale
1 MΩ||12 pF or 50 Ω
±1%
DC or AC
±(full scale range/2)
±1%
BNC
±5V DC
±210V DC
ANALOG-TO-DIGITAL CONVERTER
Resolution
Sample Rate
Memory Depth
Acquisition Time Range
Acquisition Modes
NOTES
4200-SCP2
4200-SCP2HR
8 bit
16 bit
2.5 kS/s to 1.25 GS/s in
10 kS/s to 200 MS/s in
1, 2.5, 5 steps
1, 2.5, 4, 5 steps
2.5 GS/s (1 channel interleaved) 400 MS/s (1 channel interleaved)
1 MS/channel
1 MS/channel
2 MS on 1 channel, interleaved
2 MS on 1 channel, interleaved
50 ns to 419 seconds
250 ns to 3,355 seconds
Normal, Average, Envelope, and Normal, Average, Envelope, and
Equivalent-time
Equivalent-time
1.
2.
3.
4.
Unless stated otherwise, all specifications assume a 50 termination.
When using Adaptive filtering.
Leakage measured after a 5 second settling time.
All typical specs apply to the AC+DC output connector of the 4205 Remote Bias Tee and after system
compensation.
All specifications apply at 23°±5°C, within one year of calibration, RH between 5% and 60%, after 30 minutes of
warmup.
Ch. 1
SCP2
TRIGGER
Trig In
Ch. 2
4200-SCP2
4200-SCP2HR
Channels 1 or 2, External, Pattern, Channels 1 or 2, External, Pattern,
Trigger Source
Software
Software
0 to 655 seconds
0 to 655 seconds
Post-Trigger Delay
0 to waveform time
0 to waveform time
Pre-Trigger Delay
0 to 655 seconds
0 to 655 seconds
Trigger Hold Off Range
Edge or Pulse Width
Edge or Pulse Width
Trigger Modes
Rising or Falling Edge
Rising or Falling Edge
Edge Trigger Mode
20ns to 655 seconds,
20ns to 655 seconds,
Pulse Width Range
10ns resolution
10ns resolution
TTL Compatible,
TTL Compatible,
External Trigger Input
10 kΩ input impedance
10 kΩ input impedance
SMB
SMB
Connector
AC Input
DC Sense
AC + DC
DC Force
RBT2
Trig Out
Trig In
PG2
Ch. 1
Ch. 2
SMU2
DUT
DC Sense
G
DC Force
S
1
Divider
2
SMU1
OPTIONAL SCOPE PROBE: 4200-SCP2-ACC
Bandwidth: 70MHz (4200-SCP2); 15MHz (4200-SCP2HR).
Attenuation: 1×.
Max DC: 300V DC rated.
Loading: 100pF and 1MΩ.
Length: 1m.
Connector: BNC.
S
AC Input
DC Sense
AC + DC
DC Force
RBT1
DC Sense
DC Force
Interconnection for 4200-PIV-A for leading edge CMOS, high k, and
isothermal testing. PIV-A pulses the voltage on the gate and provides
a DC bias on the drain.
NOTES
1. Inputs are referenced to 4200 chassis ground
All specifications apply at 23°±5°C, within 1 year of calibration, RH between 5% and 60%, after 30 minutes of
warmup.
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D
A
G R E A T E R
M E A S U R E
O F
C O N F I D E N C E
SEMICONDUCTOR
4200-SCP2
2
DC to 750 MHz
DC to 350 MHz
0.05, 0.1, 0.25, 0.5, 1, 2, 5,
Full Scale Input Range (50 Ω)
10 (Vp-p)
0.1, 0.2, 0.5, 1, 2.5, 5, 10, 20,
Full Scale Input Range (1 MΩ)
50, 100 (Vp-p)
<±1% of full scale
DC Gain Accuracy
1 MΩ||12 pF or 50 Ω
Impedance
±1%
Impedance Accuracy
DC or AC
Coupling
±(full scale range/2)
Offset Adjust
±(1% offset + 1% full scale)
Offset Accuracy
BNC
Input Connectors
±5V DC
Absolute Maximum Input (50 Ω)
±210V DC
Absolute Maximum Input (1 MΩ)
No. of Channels
Bandwidth (50Ω)
Bandwidth (1MΩ)
Model 4200-SCS
Side Text
specifications
4200-SCP2 1.25GS Dual-Channel Oscilloscope
Card and 4200-SCP2HR 200MS Dual-Channel
Oscilloscope Card Specifications1
4200-SCS
Semiconductor Characterization System
ModelModel
4200-SCS
Side
specifications
Text
specifications
DC I-V, C-V, and Pulse in One Test Environment
4200-PIV-Q Typical Specifications 1
4200-FLASH Typical Specifications1
Channels: 2.
TYPICAL PULSE PERFORMANCE 4:
Measurement Accuracy: Gate Current: <50μA offset, 10μA resolution 2.
Drain Current: <100μA offset, 10μA resolution 2.
Maximum Current Measure:Gate: 100mA (into 50Ω 6).
Drain: 760mA (into 50Ω), 1.33A into 5Ω 6.
Sample Rate: 200MS/s.
Duty Cycle: 0.001% to 99.9%.
Minimum Transition Time (10–90%): 150ns.
Gate Pulse Source: –20V to +20V.
Drain Voltage Range: –38V to +38V (into 50Ω), ±75V (into 1kΩ) 6.
Pulse Width: 500ns to 999ms.
Pulse Period: 510ns to 1s.
SMU Typical DC Performance:
Typical DC Leakage, Gate: <20nA offset for <35V.
Typical DC Leakage, Drain: <10nA/V 5 for <35V.
Typical DC Noise, Gate: < 20nA RMS.
Gate Offset: <20nA.
Typical DC Noise, Drain: <300pA RMS.
Maximum Voltage: 210V (>40V requires safety interlock and related precautions).
Maximum Current: 1A 5.
Channels: 4 channels (optional 8 channels max.).
TYPICAL PULSE PERFORMANCE:
Number of Voltage Levels/Waveform: 25.
Minimum Transition Time: 150ns.
Pulse Source Voltage Range: 0 to ±20V into 50Ω. 0 to ±40V into high impedance.
Pulse Width: 250ns to 1s.
Trigger Synchronization/Jitter: ±8ns.
Switching Time for DUT Pin Isolation: 100µs.
HEOR Off Capacitance: 250pF.
SMU Typical DC Performance
Typical DC Leakage: <10nA/V2 for <35V.
Typical DC Noise: <300pA RMS.
Maximum Voltage: 200V (>40V requires safety interlock and related precautions).
Maximum Current: 1A 3.
NOTES
1. Unless stated otherwise, all specifications assume a 50Ω termination
2. Leakage measured after a 5 second settling time
3. For the high power 4210-SMU. For the medium power 4200-SMU, the maximum current is 100 mA
NOTES
1. Unless stated otherwise, all specifications assume a 50Ω termination.
2. Offset and resolution specified when using adaptive filtering after system cable compensation and
offset correction.
3. Leakage measured after a 5 second settling time.
4. All typical specs apply to the AC+DC output cable (from the SMU Force, connected to the SMA tee attached to
Triax to SMA adapter) after system compensation.
5. For the high power 4210-SMU. For the medium power 4200-SMU, the maximum current is 100mA.
6. Drain Pulse Source is a voltage pulser with 55Ω output impedance. To calculate the approximate maximum
Drain current for any DUT resistance:
Idmax = 80V/55 + R DS.
To calculate approximate maximum Drain voltage, input the Imax calculated above:
Vdmax = Idmax × R DS
SEMICONDUCTOR
All specifications apply at 23° ±°5C, within 1 year of calibration, RH between 5% and 60%, after 30 minutes of
warmup.
Calle del Ebano #16625
Jardines de Chapultepec
Tijuana B.C. Mexico
Tel. (664) 681 1130
Fax. (664) 681 1150
Tel. 01800 027-4848
www.finaltest.com.mx
1.888.KEITHLEY (U.S. only)
w w w.keithley.com
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C O N F I D E N C E
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