NXP TEA1995T GreenChip Synchronous Rectifier controller User guide

UM10891
GreenChip TEA1995DB1294 synchronous rectifier controller
demo board
Rev. 1 — 16 July 2015
User manual
Document information
Info
Content
Keywords
TEA1995T, LLC converter, dual Synchronous Rectifier (SR) driver, SO8,
high efficiency, power supply, TEA1995DB1294 demo board
Abstract
This user manual describes how the TEA1995DB1294 demo board can be
used in a resonant converter. The demo board contains a TEA1995T SR
controller in an SO8 package. In addition to the TEA1995T, the demo
board contains two power MOSFETs. The demo board replaces the
secondary side of the resonant converter, excluding the output capacitors
and the feedback hardware. There are two versions of the demo board
available. A version containing TO-220 MOSFETs (UM10891), and a
second version using LFPAK MOSFETs (UM10892).
UM10891
NXP Semiconductors
TEA1995DB1294 synchronous rectifier controller demo board
Revision history
Rev
Date
Description
v.1
20150716
first issue
Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
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User manual
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1. Introduction
WARNING
Lethal voltage and fire ignition hazard
The non-insulated high voltages that are present when operating this product, constitute a
risk of electric shock, personal injury, death and/or ignition of fire.
This product is intended for evaluation purposes only. It shall be operated in a designated test
area by personnel qualified according to local requirements and labor laws to work with
non-insulated mains voltages and high-voltage circuits. This product shall never be operated
unattended.
This user manual describes the TEA1995DB1294 demo board. It provides a functional
description, supported with instructions on how to connect the board to obtain the best
results and performance. The TEA1995DB1294 demo board contains the secondary part
of a single output LLC converter, excluding the output capacitors and the feedback control
hardware. To use the TEA1995DB1294 demo board correctly, an LLC converter board in
which the demo board can replace the secondary part, is required.
The TEA1995T is a dedicated controller IC for synchronous rectification on the secondary
side of resonant converters. It incorporates two driver stages for driving the SR
MOSFETs, which rectify the outputs of the central tap secondary transformer windings.
The two gate driver stages have their own sensing inputs and operate independently.
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Fig 1.
TEA1995T pinning configuration (SO8)
1.1 Features
•
•
•
•
•
•
•
•
•
•
UM10891
User manual
Adaptive gate drive for maximum efficiency at any load
Supply current in no-load operation below 200 A
Wide supply voltage range from 4.5 V to 38 V
Dual synchronous rectification for LLC resonant in SO8 package
Synchronous rectification for multi-output flyback converters
Supports 5 V operation with logic level SR MOSFETs
Differential inputs for sensing the drain and source voltages of each SR MOSFET
SR control without minimum on-time
Adaptive gate drive for fast turn-off at the end of conduction
UnderVoltage LockOut (UVLO) with active gate pull-down
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2. Safety warning
The board application is AC mains voltage powered. Avoid touching the board when
power is applied. An isolated housing is obligatory when used in uncontrolled,
non-laboratory environments. Always provide galvanic isolation of the mains phase using
a variable transformer. Figure 2 shows the symbols that identify isolated and non-isolated
devices.
019aab174
019aab173
a. Isolated
Fig 2.
b. Not isolated
Isolation symbols
3. TEA1995DB1294 photographs
The TEA1995DB1294 demo board consists of the TEA1995T in an SO8 package and two
MOSFETs in a TO-220 package with a typical RDSon of 3.0 m. Figure 3 shows the front
side and back side of the demo board. The TEA1995DB1294 demo board is a single layer
board, with plated-through vias for the Vout and MOSFET connections.
a. Front
Fig 3.
b. Back
TEA1995DB1294 demo board photographs
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User manual
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TEA1995DB1294 synchronous rectifier controller demo board
4. TEA1995DB1294 demo board setup
To ensure that the TEA1995DB1294 demo board can be used in various applications, two
versions are available.
• The TEA1995DB1294 demo board contains two NXP Semiconductors power
MOSFETs PSMN3R0-60PS (TO-220 package), intended for low output voltage (12 V)
applications with relative high output currents.
• The TEA1995DB1295 demo board contains two NXP Semiconductors power
MOSFETs (PSMN5R5-60PS; LFPAK), intended for applications with a higher output
voltage (19.5 V) and relatively lower output currents.
The demo boards can be incorporated into an existing resonant power supply.
Figure 4 and Figure 5 show the connection of the TEA1995DB1294 demo board to the
secondary side of an LLC controller board. The demo board has 4 connections. Connect
the 2 drain lines to the secondary outputs of the transformer. Connect the GND
connection to the power ground of the main board. And connect the VCC connection to the
Vout terminal of the main board. Use thick wires for the drain and GND connections, as the
currents in these tracks can be high. The VCC can be connected to the Vout with a small
wire. This wire is only required to supply the TEA1995T.
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UM10891
User manual
TEA1995DB1294 demo board typical configuration
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TEA1995DB1294 synchronous rectifier controller demo board
Fig 5.
Placement of demo board in existing resonant converter
5. Connecting the TEA1995DB1294 demo board
Figure 6 shows an example of the TEA1995DB1294 demo board used in a typical
resonant adapter.
Fig 6.
UM10891
User manual
TEA1995DB1294 demo board connected to 150 W resonant adapter board
APBADC069
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6. Operation
6.1 Turn-on
The MOSFETs are turned on when the drain-source voltage drops to below the turn-on
threshold (400 mV). The corresponding gate driver output turns on the external SR
MOSFET. The gate of this MOSFET is rapidly charged to a level that exceeds its
threshold level. After the turn-on phase, the regulation phase starts. There is no minimum
on-time.
6.2 Regulation mode and turn-off
During regulation mode, the IC regulates the voltage difference between the drain and the
source sense inputs to an absolute level of 55 mV. The corresponding gate driver output
level is adjusted accordingly. In this mode, the gate driver voltage follows the waveform of
the current through the external MOSFET. When the current drops to lower values, the
corresponding gate driver output is discharged to a value just above the gate-source
threshold level of the external MOSFET. The discharge enables a quick turn-off of the
external MOSFET when the current reaches zero.
Especially at Continuous Conduction Mode (CCM) conditions, it is important to choose a
MOSFET with a sufficiently low RDSon value. It enables the discharge of the gate driver
output to just above the gate-source threshold level of the external MOSFET. When the
current drops to zero, this discharge makes a rapid switch-off possible. The rapid
switch-off is very important for CCM conditions. It minimizes the reverse current and the
related voltage overshoot on the drain terminal of the external MOSFET.
When the drain voltage exceeds 150 mV, the driver output voltage is actively pulled low.
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User manual
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6.3 Operational behavior
Figure 7 shows the corresponding SR waveforms.
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Fig 7.
UM10891
User manual
DDD
9
Synchronous rectification signals
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TEA1995DB1294 synchronous rectifier controller demo board
7. Schematic
Figure 8 shows the schematic diagram of the TEA1995DB1294 demo board. Basically,
the board consists of the TEA1995T SR and two SR MOSFETs. The TEA1995T acts as a
dual controlled amplifier. For each side, the input is the voltage difference between drain
and source. The corresponding gate driver signal is the output.
Resistors R1 and R2 are added to ensure easy layout design for a single-sided board.
The resistor values must be in the range of 0  to 10 . Use the lowest value for the
fastest turn-off time. Capacitor C1 is a decoupling capacitor for the VCC of the TEA1995T.
Connect it close to the IC. In combination with resistor R5, it acts as a simple RC filter.
Provisions are made for snubbers resistor R3/capacitor C2 and resistor R4/capacitor C3.
The components are not mounted. However, if high-voltage spikes are present on the
drain-source connections of the MOSFETs, they can be added.
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TEA1995DB1294 demo board schematic
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User manual
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8. Bill Of Materials (BOM)
Table 1.
TEA1995DB1294 bill of materials
Reference
Description and values
Part number
Manufacturer
C1
capacitor; 100 nF; 50 V; 0805
-
-
C2
capacitor; not mounted; 1 nF; 0805
-
-
C3
capacitor; not mounted; 1 nF; 0805
-
-
Q1; Q2
MOSFET; Ron = 3.0 m; TO-220
PSMN3R0-60PS
NXP Semiconductors
R1
resistor; 4.7 ; 0805
-
-
R2
resistor; 4.7 ; 0805
-
-
R3
resistor; 10 ; 0805
-
-
R4
resistor; not mounted; 10 ; 0805
-
-
R5
resistor; not mounted; 10 ; 0805
-
-
U1
IC; TEA1995T; SO8
-
NXP Semiconductors
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User manual
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TEA1995DB1294 synchronous rectifier controller demo board
9. TEA1995DB1294 board layout
a. Front
Fig 9.
b. Back
TEA1995DB1294 demo board - Board layout
Some important guidelines for a good layout:
• Keep the trace from the DSA/B pin to the MOSFET drain pin as short as possible.
• Keep the trace from the SSA/B pin to MOSFET source pin as short as possible.
• Keep the area of the loop from the DSA/B pin to MOSFET drain to MOSFET source to
the SSA/B pin as small as possible. Make sure that this loop overlaps the power drain
track or power source track as minimal as possible and the 2 loops do not cross each
other.
• Keep tracks from GD pins to gate of MOSFETs as short as possible.
• Decouple pins VCC and GND as close to the IC as possible with a small (100 nF)
capacitor.
• Use separate clean tracks for the VCC pin and GND. If possible, use a small ground
plane underneath the IC, which is good for heat dispersion.
• Keep the ground and source sense tracks separated. Use separate tracks for each
source sense connection and connect the IC ground to the ground plane on the PCB.
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10. NXP Semiconductors Power MOSFETs
Table 2 gives a selection of NXP Semiconductors MOSFETs that are suited to be used for
SR applications. The complete Power MOSFET selection guide can be found at:
www.nxp.com/products/mosfets.
Table 2.
Extract from NXP Semiconductors Power MOSFETs Selection Guide
Type number
Package name
VDS(max)
(V)
RDSon(max) at
VGS = 10 V
(m)
ID(max)
(A)
QGD (typical) QG(tot)
(nC)
(typical)
(nC)
PSMN1R0-40YLD
LFPAK56
40
1.1
100
17
59
PSMN1R4-40YLD
LFPAK56
40
1.4
100
13
45
PSMN1R5-40ES
I2PAK
40
1.6
120
32
136
PSMN1R5-40PS
TO-220AB
40
1.6
150
32
136
PSMN1R6-40YLC
LFPAK56
40
1.55
100
15.3
59
PSMN1R8-40YLC
LFPAK56
40
1.8
100
10.9
45
PSMN1R9-40PL
TO-220AB
40
1.7
150
40.9
230
PSMN2R1-40PL
TO-220AB
40
2.2
150
29.6
168.9
PSMN2R2-40PS
TO-220AB
40
2.1
100
25
110
PSMN2R6-40YS
LFPAK56
40
2.8
100
14
63
PSMN2R8-40PS
TO-220AB
40
2.8
100
17
71
PSMN3R3-40YS
LFPAK56
40
3.3
100
11.2
49
PSMN4R0-40YS
LFPAK56
40
4.2
100
7
38
PSMN4R5-40PS
TO-220AB
40
4.6
100
8.8
35
PSMN5R8-40YS
LFPAK56
40
5.7
90
7.8
28.8
PSMN8R0-40PS
TO-220AB
40
7.6
77
3.8
17
PSMN8R3-40YS
LFPAK56
40
8.6
70
4.5
20
PSMN2R0-60ES
I2PAK
60
2.2
120
32
137
PSMN2R0-60PS
TO-220AB
60
2.2
120
32
137
PSMN2R5-60PL
TO-220AB
60
2.6
150
41.2
223
PSMN2R6-60PS
TO-220AB
60
2.6
150
43.7
140
PSMN3R0-60ES
I2PAK
60
3
100
28
130
PSMN3R0-60PS
TO-220AB
60
3
100
28
130
PSMN3R3-60PL
TO-220AB
60
3.4
130
31
175
PSMN3R9-60PS
TO-220AB
60
3.9
130
33
103
PSMN4R2-60PL
TO-220AB
60
3.9
130
27
151
PSMN4R6-60PS
TO-220AB
60
4.6
100
14.8
70.8
PSMN5R5-60YS
LFPAK56
60
5.2
100
11.2
56
PSMN7R0-60YS
LFPAK56
60
6.4
89
9.6
45
PSMN7R6-60PS
TO-220AB
60
7.8
92
10.6
38.7
PSMN8R5-60YS
LFPAK56
60
8
76
7.7
39
PSMN3R3-80ES
I2PAK
80
3.3
120
27
139
PSMN3R3-80PS
TO-220AB
80
3.3
120
27
139
PSMN3R5-80ES
I2PAK
80
3.5
120
27
139
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Table 2.
Extract from NXP Semiconductors Power MOSFETs Selection Guide
Type number
Package name
VDS(max)
(V)
RDSon(max) at
VGS = 10 V
(m)
ID(max)
(A)
QGD (typical) QG(tot)
(nC)
(typical)
(nC)
PSMN3R5-80PS
TO-220AB
80
3.5
120
27
139
PSMN4R3-80ES
I2PAK
80
4.3
120
28
111
PSMN4R3-80PS
TO-220AB
80
4.3
120
28.4
111
PSMN4R4-80PS
TO-220AB
80
4.1
100
25
112
PSMN5R0-80PS
TO-220AB
80
4.7
100
21
87
PSMN6R5-80PS
TO-220AB
80
6.9
100
16
71
PSMN8R2-80YS
LFPAK56
80
8.5
82
12
55
PSMN8R7-80PS
TO-220AB
80
8.7
90
11
52
PSMN4R3-100ES
I2PAK
100
4.3
120
49
170
PSMN4R3-100PS
TO-220AB
100
4.3
120
49
170
PSMN5R0-100ES
I2PAK
100
5
120
49
170
PSMN5R0-100PS
TO-220AB
100
5
120
49
170
PSMN5R6-100PS
TO-220AB
100
5.6
100
43
141
PSMN7R0-100ES
I2PAK
100
6.8
100
36
125
PSMN7R0-100PS
TO-220AB
100
6.8
100
36
125
PSMN8R5-100ES
I2PAK
100
8.5
100
33
111
PSMN8R5-100PS
TO-220AB
100
8.5
100
33
111
PSMN6R3-120ES
I2PAK
120
6.7
70
61.9
207.1
PSMN6R3-120PS
TO-220AB
120
6.7
70
61.9
207.1
PSMN7R8-120ES
I2PAK
120
7.9
70
50.5
167
PSMN7R8-120PS
TO-220AB
120
7.9
70
50.5
167
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11. Abbreviations
Table 3.
Abbreviations
Acronym
Description
CCM
Continuous Conduction Mode
MOSFET
Metal-Oxide Semiconductor Field-Effect Transistor
SR
Synchronous Rectifier
UVLO
UnderVoltage LockOut
12. References
[1]
UM10891
User manual
TEA1995T data sheet — GreenChip dual synchronous rectifier controller
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13. Legal information
13.1 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
13.2 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Evaluation products — This product is provided on an “as is” and “with all
faults” basis for evaluation purposes only. NXP Semiconductors, its affiliates
and their suppliers expressly disclaim all warranties, whether express, implied
or statutory, including but not limited to the implied warranties of
non-infringement, merchantability and fitness for a particular purpose. The
entire risk as to the quality, or arising out of the use or performance, of this
product remains with customer.
In no event shall NXP Semiconductors, its affiliates or their suppliers be liable
to customer for any special, indirect, consequential, punitive or incidental
damages (including without limitation damages for loss of business, business
interruption, loss of use, loss of data or information, and the like) arising out
the use of or inability to use the product, whether or not based on tort
(including negligence), strict liability, breach of contract, breach of warranty or
any other theory, even if advised of the possibility of such damages.
Notwithstanding any damages that customer might incur for any reason
whatsoever (including without limitation, all damages referenced above and
all direct or general damages), the entire liability of NXP Semiconductors, its
affiliates and their suppliers and customer’s exclusive remedy for all of the
foregoing shall be limited to actual damages incurred by customer based on
reasonable reliance up to the greater of the amount actually paid by customer
for the product or five dollars (US$5.00). The foregoing limitations, exclusions
and disclaimers shall apply to the maximum extent permitted by applicable
law, even if any remedy fails of its essential purpose.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
13.3 Trademarks
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
GreenChip — is a trademark of NXP Semiconductors N.V.
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are the property of their respective owners.
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14. Contents
1
1.1
2
3
4
5
6
6.1
6.2
6.3
7
8
9
10
11
12
13
13.1
13.2
13.3
14
Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Safety warning . . . . . . . . . . . . . . . . . . . . . . . . . . 4
TEA1995DB1294 photographs . . . . . . . . . . . . . 4
TEA1995DB1294 demo board setup . . . . . . . . 5
Connecting the TEA1995DB1294 demo board 6
Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Turn-on . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Regulation mode and turn-off . . . . . . . . . . . . . . 7
Operational behavior . . . . . . . . . . . . . . . . . . . . 8
Schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Bill Of Materials (BOM) . . . . . . . . . . . . . . . . . . 10
TEA1995DB1294 board layout . . . . . . . . . . . . 11
NXP Semiconductors Power MOSFETs. . . . . 12
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 14
References . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Legal information. . . . . . . . . . . . . . . . . . . . . . . 15
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP Semiconductors N.V. 2015.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 16 July 2015
Document identifier: UM10891
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