UM10833 TEA1836DB1200 TEA18362LT + TEA1892TS 45 W cool

UM10833 TEA1836DB1200 TEA18362LT + TEA1892TS 45 W cool
UM10833
TEA1836DB1200 TEA18362LT + TEA1892TS 45 W cool cube
charger
Rev. 1 — 3 February 2015
User manual
Document information
Info
Content
Keywords
TEA1836DB1200, TEA18362LT, TEA1892TS, very low standby power
consumption, active X-cap discharge, burst mode operation, flyback
converter, 45 W, charger, converter, power supply, demo board
Abstract
This user manual describes the 45 W cool cube demo board with the
TEA18362LT and TEA1892TS. The TEA1836DB1200 demo board
provides an output of 19.5 V/2.31 A. It has very small dimensions
(31 mm  52 mm). It fits in the cool cube casing (outer dimensions).
UM10833
NXP Semiconductors
TEA1836DB1200 TEA18362LT + TEA1892TS 45 W cool cube charger
Revision history
Rev
Date
Description
v.1
20150203
first issue
Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
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1. Introduction
WARNING
Lethal voltage and fire ignition hazard
The non-insulated high voltages that are present when operating this product, constitute a
risk of electric shock, personal injury, death and/or ignition of fire.
This product is intended for evaluation purposes only. It shall be operated in a designated test
area by personnel qualified according to local requirements and labor laws to work with
non-insulated mains voltages and high-voltage circuits. This product shall never be operated
unattended.
1.1 Scope of this document
This user manual describes the 45 W notebook adapter TEA1836DB1200 demo board
using the TEA18362LT and TEA1892TS. It contains a set of measurements that shows
the main characteristics.
1.2 TEA18362LT
The TEA18362LT is a controller IC for low-cost Switched Mode Power Supplies (SMPS)
intended for flyback topologies. The built-in green functions provide high efficiency at all
power levels.
At high power levels, the flyback operates in QR mode. When lowering the power levels,
the controller switches to DCM or Frequency Reduction (FR) mode. The peak current is
reduced to 25 % of the maximum peak current.
At low power levels, when the flyback switching frequency reaches 25 kHz, the flyback
converter switches to burst mode. To ensure high efficiency at low power and excellent
no-load power performance, a burst mode has been integrated that reduces the opto
current to a minimum level. As the switching frequency in this mode has a minimum value
of 25 kHz while the burst frequency is always below 800 Hz, the frequencies are outside
the audible range.
During the non-switching phase of the burst mode, the internal IC supply current is
reduced to optimize efficiency further.
Valley switching is used in all operating modes.
The TEA18362LT includes an OverPower Protection (OPP). The OPP enables the
controller to deliver 150 % peak power for a limited amount of time (200 ms) in case of
overpower situations. If the output is shorted, the output power is limited to 100 % to keep
the average power consumption lower than 5 W.
The TEA18362LT is realized in a high-voltage Silicon-On-Insulator (SOI) process. This
process combines the advantages of a low-voltage process, like accuracy, high-speed
protection functions, and control, while maintaining the high-voltage capabilities like
high-voltage start-up and integrated X-cap discharge.
The TEA18362LT enables low-cost, highly efficient and reliable supplies for power
requirements up to 75 W to be designed easily and with a minimum number of external
components.
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1.3 TEA1892TS
The TEA1892TS is a member of the generation of Synchronous Rectifier (SR) controller
ICs for switched mode power supplies. Its high level of integration enables the design of a
cost-effective power supply with a very low number of external components.
The TEA1892TS is a controller IC dedicated to synchronous rectification on the
secondary side of discontinuous conduction mode and quasi-resonant flyback converters.
1.4 Setup of the 45 W notebook adapter
The board is designed for universal mains (90 V (AC) to 265 V (AC)). When a DC input
voltage is applied, the power consumption is higher due to continuous activation of the
X-capacitor discharge function.
The TEA1836DB1200 demo board incorporates two subcircuits:
• A DCM/QR type flyback converter
• A Synchronous Rectifier (SR)
The purpose of the demo board is to show the operation of the TEA18362LT and
TEA1892TS in a small-size board. The performance is according to the current general
standards including the DoE + CoC efficiency requirements. It can be used as a starting
point for further product development.
2. Safety warning
The board must be connected to the mains voltage. Touching the board during operation
must always be avoided. An isolated housing is obligatory when used in uncontrolled,
non-laboratory environments. Galvanic isolation of the mains phase using a variable
transformer is always recommended. Figure 1 shows the symbols by which these devices
can be recognized.
019aab174
019aab173
a. Isolated
Fig 1.
UM10833
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b. Not isolated
Variable transformer (Variac) isolation symbols
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3. Board photographs
a. Top
b. Bottom
Fig 2.
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TEA1836DB1200 demo board photographs
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4. Specifications
Table 1.
TEA1836DB1200 specifications
Symbol
Description
Conditions
Value
Input specifications
Vin
input voltage
90 V to 265 V
fi
input frequency
Pi(noload)
no-load input power
47 Hz to 64 Hz
at 230 V/50 Hz
< 25 mW
Output specifications
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User manual
Vout
output voltage
19.5 V
Iout
output current
Io(peak)
peak output current
for 200 ms at Vi = 90 V at 60 Hz
3A
0 A to 2.31 A
thold
hold time
at 115 V/60 Hz; full load
> 10 ms
-
line regulation
-
load regulation
tstartup
start-up time
at 115 V/60 Hz
1s

efficiency
DoE: > 88.5 % at cable end
(including 0.5 % margin);
CoC: > 89.5 % at cable end
(including 0.5 % margin)
 92 %
-
ElectroMagnetic Interference
(EMI)
CISPR22 compliant
pass
±1 %
±1 %
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5. Measurements
5.1 Test facilities
•
•
•
•
Oscilloscope: Yokogawa DL9140L
AC Power Source: Agilent 6812B
Electronic load: Agilent 6063B
Digital power meter: Yokogawa WT210
5.2 Efficiency
Efficiency measurements are performed at stabilized conditions. The output voltage and
output current is measured directly at the PCB connector. Measurements are done for
90 V/60 Hz, 115 V/60 Hz, 230 V/50 Hz, and 265 V/50 Hz. Table 2 shows the average
value of 10 boards.
Table 2.
Iout (A)
Efficiency PCB end
Vout (V)
Pin (W)
Efficiency (%)
Average 0.585 A to 2.31 A
90 V (AC)/60 Hz
0.24
19.392
5.055
92.07
0.585
19.4
12.33
92.04
1.155
19.406
24.159
92.78
1.725
19.411
36.21
92.47
2.31
19.421
49.22
91.15
5.045
92.25
92.11
115 V (AC)/60 Hz
0.24
19.392
0.585
19.4
12.283
92.40
1.155
19.407
24.052
93.19
1.725
19.411
35.82
93.48
2.31
19.418
48.22
93.02
93.02
230 V (AC)/50 Hz
0.24
19.393
5.106
91.15
0.585
19.403
12.401
91.53
1.155
19.408
24.18
92.71
1.725
19.414
35.87
93.36
2.31
19.421
47.79
93.87
90.20
92.87
265 V (AC)/50 Hz
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User manual
0.24
19.394
5.16
0.585
19.405
12.525
90.63
1.155
19.41
24.39
91.92
1.725
19.418
36.14
92.68
2.31
19.423
48.1
93.28
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DDD
Ș
,RXW$
(1) Vin = 115 V (AC)
(2) Vin = 90 V (AC)
(3) Vin = 230 V (AC)
(4) Vin = 265 V (AC)
Fig 3.
Efficiency as a function of Iout
5.3 Standby power consumption
Power consumption performance of the total application board without load connected
was measured with a Yokogawa WT210 digital power meter. The standby power
consumption has been measured 20 minutes after switch-on.
Measurements were performed for 90 V/60 Hz, 115 V/60 Hz, 230 V/50 Hz, and
265 V/50 Hz. Table 3 shows the average value of 10 boards.
Table 3.
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Standby power consumption
Vin V (AC)
Pnoload (mW)
Vout (V)
90 V/60 Hz
18.5
19.4
115 V/60 Hz
19.1
19.4
230 V/50 Hz
22.9
19.4
265 V/50 Hz
24.8
19.4
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DDD
3QRORDG
P:
Fig 4.
9LQ9
Standby power consumption at no-load
5.4 Current for changing between normal and burst mode operation
Table 4.
Condition
Current for changing between normal and burst mode operation
115 V/60 Hz
230 V/50 Hz
From normal mode to burst mode operation
current (A)
0.40
0.50
power (W)
7.75
9.7
From burst mode to normal mode operation
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current (A)
0.25
0.33
power (W)
4.85
6.4
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5.5 Load regulation
The output voltage versus load current was measured at the PCB connector.
DDD
9RXW
9
,RXW$
a. Vin = 115 V/60 Hz
DDD
9RXW
9
,RXW$
b. Vin = 230 V/50 Hz
Fig 5.
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Output voltage as a function of output current
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5.6 Line regulation
The output voltage versus mains input voltage was measured directly at the output
connector for nominal load condition (2.31 A).
The values remain within the target of 19.5 V 1 %.
DDD
9RXW
9
Fig 6.
9LQ9
Output voltage as function of the mains voltage
5.7 Output voltage regulation in standby mode
The output voltage regulation during no load operation was measured for 90 V/60 Hz and
265 V/50 Hz.
a. Vin = 90 V at 60 Hz
Fig 7.
b. Vin = 265 V at 50 Hz
Output voltage regulation at no-load
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Table 5.
Output voltage ripple at no-load condition
Symbol
90 V/60 Hz
230 V/50 Hz
Vripple (mV)
79
96
5.8 OverPower Protection (OPP)
The continuous maximum peak output power was measured directly at the output
connector for various mains input voltages. When this level is exceeded, the protection is
activated after the internal overpower counter-passes 200 ms.
DDD
3RPD[
:
Fig 8.
9LQ9
Overpower protection level
5.9 Voltage on pin VCC
Table 6.
VCC voltage
Condition
115 V/60 Hz
230 V/50 Hz
no-load
12
12
nominal load
22.9
20.1
5.10 Brownout and start-up level
Table 7.
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VCC voltage
Condition
Brownout (V)
Start level (V)
no-load
70
79
nominal load
70
79
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5.11 Short circuit protection
Output short circuit directly at the PCB connectors before switching on the mains voltage
or during operation. The system protects and latches during the short circuit condition.
With a TEA18362T, the system protects and restarts continuously during the short circuit
condition.
Table 8.
Behavior during output short circuit condition
Condition
Behavior
output short before applying AC mains voltage
latch
output short circuit during operation at full load and no-load
latch
Table 9.
Condition
90 V/60 Hz
230 V/50 Hz
265 V/50 Hz
input power
0.33 W
0.31 W
0.35 W
Fig 9.
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Input power at output short circuit condition
Short circuit during operation at Vin = 230 V (AC)
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5.12 Overvoltage protection
Applying a short circuit across the optoLED of the optocoupler (OPTO1; see Figure 22)
creates an output overvoltage condition. The overvoltage protection is triggered when the
AUX pin voltage increases to 3 V during the OVP detection interval. The output voltage
was measured directly at the output connector for both a nominal load (2.31 A) and a
no-load condition.
Table 10.
Maximum output voltage at OVP
Condition
115 V/60 Hz
230 V/50 Hz
no-load
29 V
29 V
nominal load (3.37 A)
29 V
29 V
a. Io = 0 A
b. Io = 2.31 A
Fig 10. Maximum output voltage when OVP is triggered
5.13 Start-up time
The start-up time is the time between the mains voltage switching on and the nominal
output power available at the output.
Table 11.
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Start-up time
Condition
Start-up time
90 V/60 Hz
370 ms
115 V/60 Hz
210 ms
230 V/50 Hz
150 ms
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5.14 Start-up profile
The shape of the output voltage during start-up was measured for 90 V/60 Hz and
265 V/50 Hz. It was measured directly at the output connector for a no-load and a nominal
load (2.31 A) condition.
a. Vin = 90 V (AC)
b. Vin = 265 V (AC)
Fig 11. Start-up at nominal output load
a. Vin = 90 V (AC)
b. Vin = 265 V (AC)
Fig 12. Start-up at no output load
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5.15 Hold-up time
The hold-up time is defined as the time between the following moments:
• After mains switch-off: The moment that the lowest bulk capacitor voltage during a
mains cycle is crossed.
• The moment that the output voltage starts to decrease.
The hold-up time is measured for 115 V/60 Hz for a full load (2.31 A) condition. The output
voltage was measured directly at the output connector.
Table 12.
Hold-up time
Condition
Hold-up time
115 V/60 Hz
10 ms
Fig 13. Hold-up time at Vin = 115 V (AC) and full load condition (2.31 A)
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5.16 Fast latch reset
The fast latch reset time was measured. The fast latch reset time is the time that the
voltage on pin VCC requires to drop to the reset level (8.65 V typical) when the mains
voltage is disconnected. It is 730 ms.
Fig 14. Latch reset when disconnecting mains voltage
5.17 X-capacitor discharge time
Unplug the power line at no-load condition and measure the discharge time at the
X-capacitor (330 nF).
The discharge time is the time between the moment of disconnecting the mains source
and the moment when the voltage reaches a defined voltage value.
Table 13.
X-capacitor discharge time test results
Condition
from 265 V * 2 to 135 V
from 265 V * 2 to 60 V
X-capacitor discharge time
55 ms
145 ms
Remark: The discharge can start 100 ms later (worse case) than measured and shown
because in burst mode operation the mains measurement interval is approximately
100 ms (twait(burst)HV).
The TEA1836 complies with Nemko Certification: NO081101 and with the DK-40437-UL
certification (see for documentation on the certificates
http://www.nxp.com/demoboard/TEA1836DB1200.html#documentation).
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Fig 15. X-capacitor discharge at 265 V (AC)/50 Hz and no-load
5.18 Dynamic load
The output voltage was measured at the end of the board.
Table 14.
Maximum output voltage ripple in case of OVP
Condition
Load
Output voltage ripple (mV)
115 V/60 Hz
Io: 0 % to 100 %
374
230 V/50 Hz
Io: 0 % to 100 %
374
a. Vin = 115 V (AC)
b. Vin = 230 V (AC)
Fig 16. Output voltage during dynamic load
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5.19 Output ripple
Output ripple was measured at the end of a 16AWG cable with 1.2 m length using a
standard filter of 10 F + 100 nF on the probing position. Output ripple and noise were
measured at nominal output current (2.31 A) and at no-load condition (0 A).
$GDSWHUFDEOH
—)
Q)
3UREH
3UREHWLS
DDD
Fig 17. Measurement setup
a. Vin = 90 V (AC)
b. Vin = 265 V (AC)
Fig 18. Output voltage ripple nominal load
Table 15.
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Output voltage ripple at nominal load
Condition
peak-to-peak output voltage ripple and noise
90 V/60 Hz
177 mV
265 V/50 Hz
108 mV
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a. Vin = 90 V (AC)
b. Vin = 265 V (AC)
Fig 19. Output voltage ripple at burst mode operation (no-load)
Table 16.
Output voltage ripple at no-load
Condition
peak-to-peak output voltage ripple and noise
90 V/60 Hz
70 mV
265 V/50 Hz
96 mV
5.20 EMI performance
Conditions:
•
•
•
•
•
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Type: Conducted EMI measurement
Frequency range: 150 kHz to 30 MHz
Output power: Full load condition
Input voltage: 115 V and 230 V
Secondary GND connected to PE GND
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Fig 20. Conducted EMI: Vin = 115 V (AC) - curves
Table 17.
Conducted EMI: Vmains = 115 V (AC) - sheet
Trace 1: EN55022Q
Trace 2: EN55022A
Trace 3: ---
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Trace
Frequency
Level dBV
Delta limit dB
1 quasi peak
158 kHz
55.25 N
10.31
1 quasi peak
3.97 MHz
41.43 N
14.56
1 quasi peak
230 kHz
47.80 N
14.64
1 quasi peak
4.046 MHz
41.01 N
14.99
2 average
182 kHz
37.77 N
16.62
1 quasi peak
250 kHz
41.94 N
19.80
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Fig 21. Conducted EMI: Vin = 230 V (AC) - curves
Table 18.
Conducted EMI: Vin = 230 V (AC) - sheet
Trace 1: EN55022Q
Trace 2: EN55022A
Trace 3: ---
UM10833
User manual
Trace
Frequency
Level dBV
Delta limit dB
1 quasi peak
258 kHz
53.49 N
8.00
2 average
258 kHz
42.63 N
8.86
2 average
382 kHz
35.00 N
13.23
2 average
20.166 MHz
33.80 N
16.19
1 quasi peak
19.37 MHz
42.46 N
17.53
1 quasi peak
24.706 MHz
41.82 L1
18.17
1 quasi peak
154 kHz
47.03 N
18.74
1 quasi peak
26.958 MHz
41.08 L1
18.91
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5.21 Thermal measurements
The component temperatures were measured with open frame. The open PCB was
placed on the table. After 1 hour of warming up time at full load (2.31 A), the component
temperatures were measured using an infrared thermal camera. Tamb = 25 C. The
MOSFET switch uses thermal compound for cooling.
Table 19.
Thermal measurements
Component
Part reference
Temperature (C)
Vin = 115 V (AC)
TEA1836
U4
76.8
Transformer core
T1
84.1
Transformer winding
T1
88.5
MOSFET switch SPU07N60C3
Q1
92.5
Clamp diode SA2M
D3
83.1
Discharge resistor in peak clamp
R7
84.3
SR MOSFFET PSMN012-100YS
Q2
63.2
Vin = 230 V (AC)
UM10833
User manual
TEA1836
U4
73.5
Transformer core
T1
84
Transformer winding
T1
86.5
MOSFET switch SPU07N60C3
Q1
88.8
Clamp diode SA2M
D3
82.7
Discharge resistor in peak clamp
R7
84.7
SR MOSFFET PSMN012-100YS
Q2
68.7
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6. Schematic
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Fig 22. TEA1836DB1200 schematic diagram TEA18362LT and TEA1892TS 45 W charger demo board
UM10833
24 of 33
© NXP Semiconductors N.V. 2015. All rights reserved.
6*
VSDUNJDSPP
&
Q)
9
TEA1836DB1200 TEA18362LT + TEA1892TS 45 W cool cube charger
Rev. 1 — 3 February 2015
All information provided in this document is subject to legal disclaimers.
'
%$6
'
6$0
UM10833
NXP Semiconductors
TEA1836DB1200 TEA18362LT + TEA1892TS 45 W cool cube charger
7. Bill Of Materials (BOM)
Table 20.
TEA1836DB1200 bill of material
Reference
Description and values
Part number
Manufacturer
C1
capacitor; 68 F; 20 %; 400 V; aluminum;
THT
400BXW68MEFC18X20
Rubycon
C3
capacitor; 10 F; 20 %; 35 V; aluminum; THT 35ML10MEFC4X7
Rubycon
C4
capacitor; 1000 F; 20 %; 25 V; aluminum;
10 mm  20 mm
EEUFR1E102
Panasonic
C5; C15; C17 capacitor; 100 nF; 10 %; 50 V; X7R; 0402
C1005X7R1H104K050BB
TDK
C6
capacitor; 47 nF; 10 %; 50 V; X7R; 0402
CGA2B3X7R1H473K050BB
TDK
C8; C14
capacitor; 1 nF; 10 %; 50 V; X7R; 0402
C0402C102K5RACTU
KEMET
C10
capacitor; 100 pF; 5 %; 50 V; C0G; 0402
C0402C101J5GACTU
KEMET
C11
capacitor; 10 nF; 10 %; 50 V; X7R; 0402
C0402C103K5RACTU
KEMET
C12
capacitor; 680 pF; 10 %; 630 V; X7R; 1206
C1206C681KBRACTU
KEMET
C18
capacitor; 220 nF; 10 %; 10 V; X5R; 0402
GRM155R61A224KE19D
Murata
C19
capacitor; 68 pF; 5 %; 50 V; C0G; 0402
C0402C680J5GACTU
KEMET
C20
capacitor; 1 nF; 10 %; 100 V; X7R; 0603
C1608X7R2A102K080AA
TDK
C22
capacitor; 1 nF; 5 %; 500 V; X7R; 0805
501R15W102KV4E
Johanson Dielectrics
C24
capacitor; 3.3 pF; 0.25 pF; 50 V; C0G; 0402
06035A3R3CAT2A
AVX
C25
capacitor; 4.7 F; 10 %; 35 V; X7R; 0805
C2012X7R1V475K125AC
TDK
CX1
capacitor; X2; 330 nF; 20 %; 630 V; MKP
B32922C3334M189
EPCOS
CY1
capacitor; X1/Y1; 220 pF; 10 %; 250 V (AC); DE1B3KX221KA5B
DE1
Murata
D1; D4; D5
diode; 100 V; 250 mA
BAS316
NXP Semiconductors
D2
diode; Zener; 8.2 V; 200 mA
BZX384-C8V2
NXP Semiconductors
D3
diode; 1000 V; 2 A
SA2M-E3/61T
Vishay
D6; D7
diode; 1000 V; 1 A
S1ML
Taiwan Semiconductor
D8; D9; D10;
D11
diode; 1 kV; 3 A
AS3PM-M3/86A
Vishay
F1
fuse; 250 V; 2 A; slow blow
MCPMP 2A 250V
Multicomp
L1
CM-choke: T16  12  8 (16.5 mH); 0.6 
60T:60T
AC10300301
Axis Power
Q1
MOSFET-N; 650 V; 7.3 A
SPU07N60C3
Infineon
Q2
MOSFET-N; 100 V; 15 A; LFPAK
PSMN012‐100YS,115
NXP Semiconductors
R2
resistor; 0 ; 63 mW; 0402
CRCW04020000Z0ED
Vishay
R3; R21
resistor; 1 k; 1 %; 63 mW; 0402
CRCW04021K00FKED
Vishay
R4
resistor; 162 k; 1 %; 63 mW; 0402
CRCW0402162KFKED
Vishay
R5; R8
resistor; 10 ; 1 %; 63 mW; 0603
-
-
R6
resistor; 24 k; 1 %; 63 mW; 0402
CRCW040224K0FKED
Vishay
R7
resistor; 100 k; 1 %; 500 mW; 1206
CRCW1206100KFKEAHP
Vishay
R9
resistor; 10 k; 1 %; 63 mW; 0402
CRCW040210K0FKED
Vishay
R10
resistor; 330 ; 1 %; 63 mW; 0402
CRCW0402330RFKED
Vishay
R13
resistor; jumper; 0 ; 2 A; 250 mW; 1206
-
-
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TEA1836DB1200 TEA18362LT + TEA1892TS 45 W cool cube charger
Table 20.
TEA1836DB1200 bill of material …continued
Reference
Description and values
Part number
Manufacturer
R15
resistor; 2.2 k; 1 %; 100 mW; 0603
RC0603FR-072K2L
Yageo
R16
resistor; 10 ; 1 %; 63 mW; 0402
CRCW040210R0FKED
Vishay
R17
resistor; 4.7 ; 5 %; 63 mW; 0402
CRCW04024R70JNEAIF
Vishay
R18; R19
resistor; 0.43 ; 1 %; 250 mW; 0805
ERJ6BQFR43V
Panasonic
R22
resistor; 5.6 k; 1 %; 63 mW; 0402
CRCW04025K60FKED
Vishay
R23
resistor; 33 k; 1 %; 63 mW; 0402
CRCW040233K0FKED
Vishay
R24
resistor; 150 k; 1 %; 250 mW; 1206
-
-
R25
resistor; 43 k; 1 %; 63 mW; 0402
-
-
R26; R27
resistor; 20 k; 1 %; 250 mW; 1206
-
-
R28
resistor; jumper; 0 ; 63 mW; 0603
-
-
R30
resistor; 330 ; 5 %; 63 mW; 0603
-
-
RT2
resistor; NTC; 100 k; 5 %; 100 mW; 4190K; NTCLE100E3104JB0
mount high against transformer T1 (top)
Vishay
T1
transformer; RM8; 12P
TEA1836DB1200_T1
NXP Semiconductors
U1
voltage regulator; 2.495 V to 30 V; 1 %;
150 mA
SC431CSK-1TRT
Semtech Corporation
U2
synchronization rectifier controller;
TEA1892TS
TEA1892TS-1
NXP Semiconductors
U3
optocoupler; 70 V; 50 mA; controller 130 %
to 260 %
TCLT1008
Vishay
U4
SMTP controller; TEA18362LT
TEA18362LT
NXP Semiconductors
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Rev. 1 — 3 February 2015
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TEA1836DB1200 TEA18362LT + TEA1892TS 45 W cool cube charger
8. PCB layout
8.1 Copper tracks and area
a. Top
b. Bottom
Fig 23. Demo board PCB layout (copper tracks and areas)
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Rev. 1 — 3 February 2015
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TEA1836DB1200 TEA18362LT + TEA1892TS 45 W cool cube charger
8.2 Component placement
a. Top
b. Bottom
Fig 24. Demo board PCB layout (component placement)
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Rev. 1 — 3 February 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
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TEA1836DB1200 TEA18362LT + TEA1892TS 45 W cool cube charger
9. Transformer data
9.1 Introduction
For this demo board, requirements were set to show high performance in a very small
45 W form factor board using a basic circuit configuration. To reach this goal, the
transformer design requires extra attention to support the combination of high-efficiency
performance while still being EMI-compliant using a 220 pF Y-capacitor. At the same time,
the concept must deliver 45 W nominal output power and generate a peak output power
that is 50 % higher.
An RM8 core was used in combination with a customized bobbin type to build the
transformer.
9.2 Transformer data
SLQV
“
%RWWRPYLHZ
‘
‘
“
“
“
6LGHYLHZ
DDD
Fig 25. Transformer data
Table 21.
UM10833
User manual
Technical specifications transformer
Description
Value/requirement
bobbin
RM8
ferrite material
N87 (EPCOS) or equivalent
input voltage
85 V to 265 V (AC)
output voltage
19.5 V
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 3 February 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
29 of 33
UM10833
NXP Semiconductors
TEA1836DB1200 TEA18362LT + TEA1892TS 45 W cool cube charger
Table 21.
Technical specifications transformer …continued
Description
Value/requirement
output current
2.36 A
maximum switching frequency
130 kHz
inductance
340 H; 3 %
9.3 Transformer winding construction
ILOOLQJPDWHULDO
65
$8;
$8;
35,0
6+,(/'
6(&
35,0
ZLQGLQJGLUHFWLRQ
DDD
Fig 26. Transformer winding construction
Table 22.
Transformer winding construction
Layer
Name
Number of
turns
Wires
parallel
Wire type
Wire
diameter
(m)
Pin (in)
Pin (out)
1
1/2 PRIM
18
2
enameled
212
pin 1
flying lead
2
SEC
8
2
TIW
350
flying lead
flying lead
3
SHIELD
1
1
foil (CuSn6)
20
pin 10
-
4
1/2 PRIM
24
1
enameled
280
flying lead
pin 3
5
AUX
7
1
enameled
150
pin 10
pin 11
6
AUX2
7
1
TIW
200
pin 11
flying lead
7
SR
4
1
TIW
200
flying lead
flying lead
UM10833
User manual
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Rev. 1 — 3 February 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
30 of 33
UM10833
NXP Semiconductors
TEA1836DB1200 TEA18362LT + TEA1892TS 45 W cool cube charger
10. Abbreviations
Table 23.
Abbreviations
Acronym
Description
BCM
Boundary Conduction Mode
DCM
Discontinuous Conduction Mode
EMI
ElectroMagnetic Interference
MOSFET
Metal-Oxide Semiconductor Field-Effect Transistor
OCP
OverCurrent Protection
OPP
OverPower Protection
OVP
OverVoltage Protection
OLP
Open-Loop Protection
PCB
Printed-Circuit Board
QR
Quasi Resonant
RMS
Root Mean Square
SOI
Silicon-On-Insulator
SR
Synchronous Rectification
11. References
[1]
TEA18361LT data sheet — GreenChip SMPS control IC
[2]
TEA18361T data sheet — GreenChip SMPS control IC
[3]
TEA18362LT data sheet — GreenChip SMPS control IC
[4]
TEA18362T data sheet — GreenChip SMPS control IC
[5]
TEA18363LT data sheet — GreenChip SMPS control IC
[6]
TEA18363T data sheet — GreenChip SMPS control IC
[7]
TEA1892TS data sheet — GreenChip synchronous rectifier controller
[8]
AN11403 application note — TEA1836XT GreenChip SMPS control IC
[9]
AN11149 application note — TEA1792 GreenChip synchronous rectifier controller
[10] UM10758 user manual — TEA1836DB1094 TEA1836 + TEA1792 65 W notebook
adapter
UM10833
User manual
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 3 February 2015
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31 of 33
UM10833
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TEA1836DB1200 TEA18362LT + TEA1892TS 45 W cool cube charger
12. Legal information
12.1 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
12.2 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
Evaluation products — This product is provided on an “as is” and “with all
faults” basis for evaluation purposes only. NXP Semiconductors, its affiliates
and their suppliers expressly disclaim all warranties, whether express, implied
or statutory, including but not limited to the implied warranties of
non-infringement, merchantability and fitness for a particular purpose. The
entire risk as to the quality, or arising out of the use or performance, of this
product remains with customer.
In no event shall NXP Semiconductors, its affiliates or their suppliers be liable
to customer for any special, indirect, consequential, punitive or incidental
damages (including without limitation damages for loss of business, business
interruption, loss of use, loss of data or information, and the like) arising out
the use of or inability to use the product, whether or not based on tort
(including negligence), strict liability, breach of contract, breach of warranty or
any other theory, even if advised of the possibility of such damages.
Notwithstanding any damages that customer might incur for any reason
whatsoever (including without limitation, all damages referenced above and
all direct or general damages), the entire liability of NXP Semiconductors, its
affiliates and their suppliers and customer’s exclusive remedy for all of the
foregoing shall be limited to actual damages incurred by customer based on
reasonable reliance up to the greater of the amount actually paid by customer
for the product or five dollars (US$5.00). The foregoing limitations, exclusions
and disclaimers shall apply to the maximum extent permitted by applicable
law, even if any remedy fails of its essential purpose.
Safety of high-voltage evaluation products — The non-insulated high
voltages that are present when operating this product, constitute a risk of
electric shock, personal injury, death and/or ignition of fire. This product is
intended for evaluation purposes only. It shall be operated in a designated
test area by personnel that is qualified according to local requirements and
labor laws to work with non-insulated mains voltages and high-voltage
circuits.
The product does not comply with IEC 60950 based national or regional
safety standards. NXP Semiconductors does not accept any liability for
damages incurred due to inappropriate use of this product or related to
non-insulated high voltages. Any use of this product is at customer’s own risk
and liability. The customer shall fully indemnify and hold harmless NXP
Semiconductors from any liability, damages and claims resulting from the use
of the product.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
12.3 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
GreenChip — is a trademark of NXP Semiconductors N.V.
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Rev. 1 — 3 February 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
32 of 33
UM10833
NXP Semiconductors
TEA1836DB1200 TEA18362LT + TEA1892TS 45 W cool cube charger
13. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
5.1
5.2
5.3
5.4
5.5
5.6
5.7
5.8
5.9
5.10
5.11
5.12
5.13
5.14
5.15
5.16
5.17
5.18
5.19
5.20
5.21
6
7
8
8.1
8.2
9
9.1
9.2
9.3
10
11
Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Scope of this document . . . . . . . . . . . . . . . . . . 3
TEA18362LT. . . . . . . . . . . . . . . . . . . . . . . . . . . 3
TEA1892TS . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Setup of the 45 W notebook adapter . . . . . . . . 4
Safety warning . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Board photographs . . . . . . . . . . . . . . . . . . . . . . 5
Specifications. . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Measurements . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test facilities . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Efficiency . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Standby power consumption. . . . . . . . . . . . . . . 8
Current for changing between normal and burst
mode operation. . . . . . . . . . . . . . . . . . . . . . . . . 9
Load regulation . . . . . . . . . . . . . . . . . . . . . . . . 10
Line regulation . . . . . . . . . . . . . . . . . . . . . . . . 11
Output voltage regulation in standby mode . . 11
OverPower Protection (OPP) . . . . . . . . . . . . . 12
Voltage on pin VCC . . . . . . . . . . . . . . . . . . . . 12
Brownout and start-up level . . . . . . . . . . . . . . 12
Short circuit protection . . . . . . . . . . . . . . . . . . 13
Overvoltage protection . . . . . . . . . . . . . . . . . . 14
Start-up time . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Start-up profile . . . . . . . . . . . . . . . . . . . . . . . . 15
Hold-up time . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Fast latch reset . . . . . . . . . . . . . . . . . . . . . . . . 17
X-capacitor discharge time . . . . . . . . . . . . . . . 17
Dynamic load . . . . . . . . . . . . . . . . . . . . . . . . . 18
Output ripple . . . . . . . . . . . . . . . . . . . . . . . . . . 19
EMI performance . . . . . . . . . . . . . . . . . . . . . . 20
Thermal measurements . . . . . . . . . . . . . . . . . 23
Schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Bill Of Materials (BOM) . . . . . . . . . . . . . . . . . . 25
PCB layout . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Copper tracks and area . . . . . . . . . . . . . . . . . 27
Component placement . . . . . . . . . . . . . . . . . . 28
Transformer data . . . . . . . . . . . . . . . . . . . . . . . 29
Introduction. . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Transformer data . . . . . . . . . . . . . . . . . . . . . . 29
Transformer winding construction. . . . . . . . . . 30
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 31
References . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
12
12.1
12.2
12.3
13
Legal information . . . . . . . . . . . . . . . . . . . . . .
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . .
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . .
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . .
Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
32
32
32
32
33
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP Semiconductors N.V. 2015.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 3 February 2015
Document identifier: UM10833
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