Power Supply IC
S1F77B01
Technical Manual
SEIKO EPSON CORPORATION
Rev.1.3
NOTICE
No part of this material may be reproduced or duplicated in any form or by any means without the written
permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice.
Seiko Epson does not assume any liability of any kind arising out of any inaccuracies contained in this material
or due to its application or use in any product or circuit and, further, there is no representation that this material is
applicable to products requiring high level reliability, such as, medical products. Moreover, no license to any
intellectual property rights is granted by implication or otherwise, and there is no representation or warranty that
anything made in accordance with this material will be free from any patent or copyright infringement of a third
party. This material or portions thereof may contain technology or the subject relating to strategic products
under the control of the Foreign Exchange and Foreign Trade Law of Japan and may require an export license
from the Ministry of International Trade and Industry or other approval from another government agency.
All other product names mentioned herein are trademarks and/or registered trademarks of their respective
companies.
©SEIKO EPSON CORPORATION 2006, All rights reserved.
Configuration of product number
zDEVICES
S1
F
77B01
B
0C00
00
Packing specifications
Specifications
Shape
(B:WCSP, Y:SOT)
Model number
Model name
(F : Power Supply)
Product classification
(S1:Semiconductors)
CONTENTS
1. DESCRIPTION ................................................................................................................................. 1
2. FEATURES ...................................................................................................................................... 1
3. PACKAGE........................................................................................................................................ 1
4. APPLICATION ................................................................................................................................. 1
5. BLOCK DIAGRAM........................................................................................................................... 2
6. SELECTION GUIDE......................................................................................................................... 3
7. PIN ASSIGNMENT........................................................................................................................... 3
8. MARKING ........................................................................................................................................ 4
9. MARKING ........................................................................................................................................ 5
10. PIN DESCRIPTION .......................................................................................................................... 6
11. ABSOLUTE MAXIMUM RATINGS .................................................................................................. 6
12. TIMING CHARTS AND RECOMMENDED CIRCUIT DIAGRAMS................................................... 7
13. ELECTRICAL CHARACTERISTICS, DELAY CIRCUIT BUILT-IN PRODUCTS.............................. 8
14. CHARACTERISTIC MEASURING CIRCUITS ................................................................................. 9
15. DIMENSIONS................................................................................................................................. 12
16. CHARACTERISTIC EXAMPLE .....................................................................................................14
S1F77B01 Technical Manual (Rev.1.3)
EPSON
i
1. DESCRIPTION
1.
DESCRIPTION
The S1F77B01 is a CMOS detector that runs at superlow consumption current 350nA (Typ.).
The detecting voltage can be selected in the range from 1.5V to 4.6V which is set to high accuracy ±2.0% in
0.1V steps. The power voltage is allowable in the range of low voltage 0.9 to 5.5V.
This detector adopts a compact package, which is available in a compact mobile device.
2.
•
•
•
•
•
•
3.
FEATURES
Superlow power consumption:
Range of detecting voltage:
Accuracy of detecting voltage:
Hysteresis characteristics:
Temperature characteristics of detecting voltage:
Output type:
PACKAGE
SOT23
WCSP
4.
•
•
•
•
•
•
•
350nA (VDD=3.0V, Typ.)
1.5 to 4.6V (in 0.1V steps)
±2.0%
5.0% Typ.
±100 ppm/°C (Typ.)
CMOS, Nch open drain
5pin
4pin
APPLICATION
Microcomputer and logic circuit resetting
Battery checker
Level discriminator
Waveform rectifier circuit
Backup power switching circuit
Power failure detector
Overcurrent protection circuit
S1F77B01 Technical Manual (Rev.1.3)
EPSON
1
5. BLOCK DIAGRAM
5.
BLOCK DIAGRAM
zCMOS output
VREF
Delay circuit
VDD
VOUT
VSS
DS*
zNch open drain output
VREF
Delay circuit
VDD
VOUT
VSS
DS*
Note: SOT23 package product only; otherwise, a product with DS pin set to NC
The DS pin must be fixed to “LOW” outside the IC.
2
EPSON
S1F77B01 Technical Manual (Rev.1.3)
6. SELECTION GUIDE
6.
SELECTION GUIDE
S1F77B01 * * * * 0 * *
a bcd e
a
b
c
d
e
7.
Package type
SOT23 5PIN
“Y”
WCSP 4PIN
“B”
Indicates a value that is ten times the detecting voltage.
For CMOS output, delay 50ms
“C”
For CMOS output, delay 100ms
“D”
For CMOS output, delay 200ms
“E”
For Nch open drain output, delay 50ms
“L”
For Nch open drain output, delay 100ms
“M”
For Nch open drain output, delay 200ms
“N”
Fixed to 0 in this IC.
Taping form
TR type
“0R”
PIN ASSIGNMENT
VDD
VOUT
4
5
VDD
SOT23 5PIN
1
DS
2
3
VSS
NC
S1F77B01 Technical Manual (Rev.1.3)
WCSP 4PIN
3
4
Top View
1
2
DS
EPSON
VOUT
VSS
3
8.
8.
MARKING
MARKING
SOT23 5PIN
WCSP 4PIN
3
4
5
a b c
d
e
a b
d
: Product code
c d e : Lot code
1
2
3
CMOS
VdetOption
1.5V
1.6V
1.7V
1.8V
1.9V
2.0V
2.1V
2.2V
2.3V
2.4V
2.5V
2.6V
2.7V
2.8V
2.9V
3.0V
3.1V
3.2V
3.3V
3.4V
3.5V
3.6V
3.7V
3.8V
3.9V
4.0V
4.1V
4.2V
4.3V
4.4V
4.5V
4.6V
4
1
Delay time 50ms
a
b
B
5
B
6
B
7
B
8
B
9
J
0
J
1
J
2
J
3
J
4
J
5
J
6
J
7
J
8
J
9
J
A
J
B
J
C
J
D
J
E
J
F
J
G
J
H
J
J
J
K
J
L
J
M
J
N
J
P
J
Q
J
R
J
S
a b : Product code
b
a
Top View
4
c
c
d : Lot code
2
Delay time 100ms Delay time 200ms
a
b
a
b
_
B
5
B
5
_
B
6
B
6
_
B
7
B
7
_
B
8
B
8
_
B
9
B
9
_
J
0
J
0
_
J
1
J
1
_
J
2
J
2
_
J
3
J
3
_
J
4
J
4
_
J
5
J
5
_
J
6
J
6
_
J
7
J
7
_
J
8
J
8
_
J
9
J
9
_
J
A
J
A
_
J
B
J
B
_
J
C
J
C
_
J
D
J
D
_
J
E
J
E
_
J
F
J
F
_
J
G
J
G
_
J
H
J
H
_
J
J
J
J
_
J
K
J
K
_
J
L
J
L
_
J
M
J
M
_
J
N
J
N
_
J
P
J
P
_
J
Q
J
Q
_
J
R
J
R
_
J
S
J
S
EPSON
S1F77B01 Technical Manual (Rev.1.3)
9.
9.
MARKING
MARKING
SOT23 5PIN
3
4
5
a b c d
1
WCSP 4PIN
2
a b
e
c
d
: Product code
d e : Lot code
a
Top View
4
a b : Product code
b
c
c
d : Lot code
3
1
Nch open drain
VdetDelay time 50ms
Option
a
b
1.5V
B
5
1.6V
B
6
1.7V
B
7
1.8V
B
8
1.9V
B
9
2.0V
J
0
2.1V
J
1
2.2V
J
2
2.3V
J
3
2.4V
J
4
2.5V
J
5
2.6V
J
6
2.7V
J
7
2.8V
J
8
2.9V
J
9
3.0V
J
A
3.1V
J
B
3.2V
J
C
3.3V
J
D
3.4V
J
E
3.5V
J
F
3.6V
J
G
3.7V
J
H
3.8V
J
J
3.9V
J
K
4.0V
J
L
4.1V
J
M
4.2V
J
N
4.3V
J
P
4.4V
J
Q
4.5V
J
R
4.6V
J
S
S1F77B01 Technical Manual (Rev.1.3)
2
Delay time 100ms Delay time 200ms
a
b
a
b
_
B
5
B
5
_
B
6
B
6
_
B
7
B
7
_
B
8
B
8
_
B
9
B
9
_
J
0
J
0
_
J
1
J
1
_
J
2
J
2
_
J
3
J
3
_
J
4
J
4
_
J
5
J
5
_
J
6
J
6
_
J
7
J
7
_
J
8
J
8
_
J
9
J
9
_
J
A
J
A
_
J
B
J
B
_
J
C
J
C
_
J
D
J
D
_
J
E
J
E
_
J
F
J
F
_
J
G
J
G
_
J
H
J
H
_
J
J
J
J
_
J
K
J
K
_
J
L
J
L
_
J
M
J
M
_
J
N
J
N
_
J
P
J
P
_
J
Q
J
Q
_
J
R
J
R
_
J
S
J
S
EPSON
5
10. PIN DESCRIPTION
10.
PIN DESCRIPTION
For SOT-23-5
Pin No.
1
2
3
4
5
Pin Name
DS
VSS
NC
VOUT
VDD
Function
Fixed to “LOW”.
GND pin.
No connection
Voltage detection output pin
Power input pin
For WCSP
Pin No.
1
2
3
4
11.
Pin Name
DS
VSS
VDD
VOUT
Function
Fixed to “LOW”.
GND pin.
Voltage output pin
Power detection output pin
ABSOLUTE MAXIMUM RATINGS
(Ta=25°C RL=∞ unless otherwise specified)
Item
Symbol
VDD-VSS
Power voltage
Output voltage
Nch open drain output
CMOS output
VOUT
Output current
Allowable dissipation
Guaranteed operating temperature range
Storage temperature range
PD
IOUT
SOT23
WCSP
Topr
Tstg
Rating
7.0
VSS-0.3V to 7.0
VSS-0.3V to VDD+0.3V
20
300
100
-40 to +85
-40 to +125
Unit
V
V
mA
mW
mW
°C
°C
Note: To stabilize the IC, insert the decoupling capacitor between VDD and VSS.
6
EPSON
S1F77B01 Technical Manual (Rev.1.3)
12. TIMING CHARTS AND RECOMMENDED CIRCUIT DIAGRAMS
12.
TIMING CHARTS AND RECOMMENDED CIRCUIT DIAGRAMS
zCMOS
Power
voltage
VDD
Release voltage
VDET+
Detecting voltage
VDET-
Hysteresis width
Min. operating
voltage
VDD
VSS
VOUT
DS
V
VSS
Output
voltage
Recommended circuit diagram
td
zNch open drain
Power
voltage
VDD
Release voltage
VDET+
Detecting voltage
VDET-
Hysteresis width
Min. operating
voltage
R
470kΩ
VDD
VOUT
DS
VSS
VSS
Output
voltage
V
Recommended circuit diagram
td
S1F77B01 Technical Manual (Rev.1.3)
EPSON
7
13. ELECTRICAL CHARACTERISTICS, DELAY CIRCUIT BUILT-IN PRODUCTS
13.
ELECTRICAL CHARACTERISTICS, DELAY CIRCUIT BUILT-IN PRODUCTS
(1) CMOS output
(Ta=25°C RL=∞ unless otherwise specified)
Item
Detecting voltage
Hysteresis width
Symbol
VDETVHYS
Consumption current 1
ISS1
Consumption current 2
ISS2
Max. operating voltage
Min. operating voltage
VDDH
VDDL
IOUTN
Output current
IOUTP
Delay time
td
Response time
Detecting voltage
temperature
coefficient
tPHL
∆VDET
∆Topt
Conditions
Min.
Typ.
Max.
VDET-(S)×0.98 VDET-(S) VDET-(S)×1.02
VHYS=(VDET+)-(VDET-)
VDET-*0.03 VDET-*0.05 VDET-*0.07
VDD=2.5V, VDET-(S)=1.5V
350
700
VDD=3.7V, VDET-(S)=2.7V
350
700
350
700
VDD=5.5V, VDET-(S)=4.6V
VDD=1.3V, VDET-(S)=1.5V
280
560
VDD=2.5V, VDET-(S)=2.7V
280
560
280
560
VDD=4.4V, VDET-(S)=4.6V
5.5
0.9
VDD=0.9V, VDS=0.5V
0.2
0.8
1.5
[Nch]
VDD=1.2V, VDS=0.5V
1.0
2.2
3.5
VDD<VDET5.5
6.8
8.1
VDD=2.4V, VDS=0.5V
VDD=3.0V,
2.5
4.5
7.0
VDS=VDD-0.5V
[Pch]
VDD=4.0V,
4.5
6.2
8.0
VDD>VDETVDS=VDD-0.5V
VDD=5.5V,
6.5
8.2
9.8
VDS=VDD-0.5V
td=50ms
42.5
50
57.5
td=100ms
85
100
115
td=200ms
170
200
230
VDD: (VDET-(S))+1.0V ===> 0.9V
80
-40°C≦Topt≦85°C
-
±100
-
Unit
V
V
nA
nA
V
V
mA
ms
µs
ppm/°C
(2) Nch open drain output
(Ta=25°C RL=∞ unless otherwise specified)
Item
Detecting voltage
Hysteresis width
Symbol
VDETVHYS
Consumption current 1
ISS1
Consumption current 2
ISS2
Max. operating voltage
Min. operating voltage
VDDH
VDDL
Output current of
output transistor
IOUTN
Leak current of output
transistor
ILEAK
VDD=5.5V,VDS=5.5V
-
-
0.1
Delay time
td
Response time
Detecting voltage
temperature
coefficient
tPHL
td=50ms
td=100ms
td=200ms
VDD: (VDET-(S))+1.0V ===> 0.9V
42.5
85
170
-
50
100
200
-
57.5
115
230
80
∆VDET
∆Topt
-40°C≦Topt≦85°C
-
±100
-
8
Conditions
VHYS=(VDET+)-(VDET-)
VDD=2.5V, VDET-(S)=1.5V
VDD=3.7V, VDET-(S)=2.7V
VDD=5.5V, VDET-(S)=4.6V
VDD=1.3V, VDET-(S)=1.5V
VDD=2.5V, VDET-(S)=2.7V
VDD=4.4V, VDET-(S)=4.6V
VDD=0.9V, VDS=0.5V
[Nch]
VDD=1.2V, VDS=0.5V
VDD<VDETVDD=2.4V, VDS=0.5V
EPSON
Min.
Typ.
Max.
VDET-(S)×0.98 VDET-(S) VDET-(S)×1.02
VDET-*0.03 VDET-*0.05 VDET-*0.07
350
700
350
700
350
700
280
560
280
560
280
560
5.5
0.9
0.2
0.8
1.5
1.0
2.2
3.5
5.5
6.8
8.1
Unit
V
V
nA
nA
V
V
mA
µA
ms
µs
ppm/°C
S1F77B01 Technical Manual (Rev.1.3)
14. CHARACTERISTIC MEASURING CIRCUITS
14.
CHARACTERISTIC MEASURING CIRCUITS
VDET-, VHYS, tPLH, td
5V
470kΩ
VDD
VDD
Note: No pull-up resistor for
CMOS output
A: When fixed to DS=”LOW”
B: When fixed to DS=”HIGH”
VOUT
B
V
VSS
V
DS
A
Fig.1
ISS1, ISS2
VDD
A
VOUT
VDD
VSS, DS
Fig.2
S1F77B01 Technical Manual (Rev.1.3)
EPSON
9
14. CHARACTERISTIC MEASURING CIRCUITS
IOUT Nch, ILEAK
VDD
VDD
V
A
VOUT
VDS
V
VSS, DS
Fig.3
IOUT Pch
V
VDD
VDD
V
VOUT
VDS
A
VSS, DS
Fig.4
10
EPSON
S1F77B01 Technical Manual (Rev.1.3)
14. CHARACTERISTIC MEASURING CIRCUITS
zDescription of tPHL
Input: VDD
VDD=VDET+ +1.0V
*3
VDD=0.9V
Output: VOUT
VDD=VDET+
tPHL
+1.0V
50%
VOUT=VDD(0.9V)
VSS
*3: VDET+ indicates the actual release voltage. VDET+=VDET-×1.05 (Typ.)
(1) For CMOS output
tPHL provides the timeframe ranging from a time when the pulse voltage (VDET+)+1.0V → 0.9V is
applied to VDD, to a time when the output voltage reaches VDD/2.
(2) Nch open drain output
tPHL provides the timeframe ranging from a time when the pulse voltage (VDET+)+1.0V → 0.9V is
applied to VDD, to a time when the output voltage reaches VDD/2.
The output pin is pulled up with 470kΩ resistance and VDD power for measurement.
zDescription of td
Input: VDD
VDD=VDET+
+1.0V
VDD=0.9V
td
Output: VOUT
VOUT= 100 %
50%
VSS
(1) For CMOS output
td provides the timeframe ranging from a time when the pulse voltage 0.9V → (VDET+)+1.0V is
applied to VDD, to a time when the output voltage reaches VDD/2.
(2) For Nch open drain output
td provides the timeframe ranging from a time when the pulse voltage 0.9V → (VDET+)+1.0V is
applied to VDD, to a time when the output voltage reaches VDD/2.
The output pin is pulled up with 470kΩ resistance and VDD power for measurement.
S1F77B01 Technical Manual (Rev.1.3)
EPSON
11
15. DIMENSIONS
15.
DIMENSIONS
・SOT23 5PIN
l2
bi
4PIN
1PIN
HE
E
θ
5PIN
3PIN
D
θ
θ1
θ1
l2
θ
bi
2.40
1.00
0.95
0.80
AMax.
U
A1
A2
b
L
y S
e
S
Symbol
D
E
AMax.
AL
Ae
e
lo
C
L
L1
HE
y
L1
Min.
0
0.3
0.1
0.2
-
Dimention In Millmeters
Nom.
Max.
2.9
1.6
1.40
0.15
1.1
0.95
0.5
0.26
0.6
0.6
2.8
0.1
1 = 1mm
12
EPSON
S1F77B01 Technical Manual (Rev.1.3)
15.
DIMENSIONS
・WCSP 4PIN
Top View
E
D
INDEX
A
A2
A1 CORNER
A1
S
y S
Bottom View
e1
SE
SD
B
e2
e3
A
2
b
1
A1 CORNER
S1F77B01 Technical Manual (Rev.1.3)
Symbol
D
E
A
A1
A2
e1
e2
e3
b
x
y
SD
SE
EPSON
Min.
0.82
0.82
0.18
0.23
-
[Unit: mm]
Dimention In Millmeters
Nom.
Max.
0.92
1.02
0.92
1.02
0.67
0.21
0.24
0.40
0.50
0.50
0.71
0.26
0.29
0.08
0.05
0.25
0.25
-
13
16. CHARACTERISTIC EXAMPLE
16.
CHARACTERISTIC EXAMPLE
(1) Detecting voltage
(2) Release voltage
S1F77B01Y27000R
S1F77B01Y27000R
7
6
6
5
5
VOUT[V]
VOUT[V]
VOUT[V]
VOUT[V]
S1F77B01Y27000R
S1F77B01Y27000R
S1F77B01Y27000R
7
4
3
4
3
2
2
1
1
0
0
0
2
4
6
0
2
VDD
[V]
VDD[V]
4
6
VDD[V]
VDD
[V]
(3) Hysteresis width
S1F77B01Y27000R
S1F77B01Y27000R
7
6
VOUT[V]
VOUT[V]
5
4
3
2
1
0
0
2
4
6
VDD[V]
VDD
[V]
(4) Consumption current
S1F77B01Y15000R
S1F77B01Y15000R
700
S1F77B01Y27000R
S1F77B01Y27000R
450
400
600
350
300
400
IISS[nA]
SS[nA]
IISS[nA]
SS[nA]
500
300
200
150
200
100
100
50
0
0
0
14
250
1
2
3
4
[V]
VVDD
DD[V]
5
6
0
EPSON
1
2
3
4
VVDD
DD[V][V]
5
6
S1F77B01 Technical Manual (Rev.1.3)
16. CHARACTERISTIC EXAMPLE
(5) Nch output current VDS=0.5V (CMOS)
(6) Pch output current VDS=0.5V (CMOS)
S1F77B01Y27000R
S1F77B01Y27000R
S1F77B01Y27000R
S1F77B01Y27000R
0.6
0.4
IIOUT[mA]
OUT[mA]
IOUT[mA]
IOUT[mA]
0.5
0.3
0.2
0.1
0
0
0.2
0.4
0.6
VDD[V]
V
DD[V]
0.8
20.00
18.00
16.00
14.00
12.00
10.00
8.00
6.00
4.00
2.00
0.00
0.00
1
1.00
2.00
3.00
VDS[V]
VDS
[V]
(7) Delay time (100ms)
(8) Response time
S1F77B01Y27000R
Tek STOP
Tek STOP
S1F77B01Y27000R
(9) Characteristics between detecting voltage and ambient temperature
S1F77B01M15000R
S1F77B01M15000R
Detecting
VDET-[V]
検出電圧 Vdet-[V]
1.550
1.530
1.510
1.490
1.470
1.450
-50
-25
0
25
50
75
温度 Temperature[℃]
Temperature[°C]
100
* Ta=25°C unless otherwise specified
S1F77B01 Technical Manual (Rev.1.3)
EPSON
15
International Sales Operations
AMERICA
ASIA
EPSON ELECTRONICS AMERICA, INC.
HEADQUARTERS
EPSON (CHINA) CO., LTD.
150 River Oaks Parkway
San Jose, CA 95134, U.S.A.
Phone: +1-800-228-3964
FAX: +1-408-922-0238
SHANGHAI BRANCH
7F, High-Tech Bldg., 900, Yishan Road,
Shanghai 200233, CHINA
Phone: +86-21-5423-5522
FAX: +86-21-5423-5512
SALES OFFICES
Northeast
301 Edgewater Place, Suite 210
Wakefield, MA 01880, U.S.A.
Phone: +1-800-922-7667
FAX: +1-781-246-5443
EUROPE
EPSON EUROPE ELECTRONICS GmbH
HEADQUARTERS
Riesstrasse 15
80992 Munich, GERMANY
Phone: +49-89-14005-0
23F, Beijing Silver Tower 2# North RD DongSanHuan
ChaoYang District, Beijing, CHINA
Phone: +86-10-6410-6655
FAX: +86-10-6410-7320
FAX: +49-89-14005-110
EPSON HONG KONG LTD.
20/F., Harbour Centre, 25 Harbour Road
Wanchai, Hong Kong
Phone: +852-2585-4600
FAX: +852-2827-4346
Telex: 65542 EPSCO HX
EPSON Electronic Technology Development (Shenzhen)
LTD.
12/F, Dawning Mansion, Keji South 12th Road,
Hi- Tech Park, Shenzhen
Phone: +86-755-2699-3828
DÜSSELDORF BRANCH OFFICE
FAX: +86-755-2699-3838
Altstadtstrasse 176
51379 Leverkusen, GERMANY
Phone: +49-2171-5045-0
FAX: +49-2171-5045-10
EPSON TAIWAN TECHNOLOGY & TRADING LTD.
FRENCH BRANCH OFFICE
EPSON SINGAPORE PTE., LTD.
1 Avenue de l’ Atlantique, LP 915 Les Conquerants
Z.A. de Courtaboeuf 2, F-91976 Les Ulis Cedex, FRANCE
Phone: +33-1-64862350
FAX: +33-1-64862355
UK & IRELAND BRANCH OFFICE
8 The Square, Stockley Park, Uxbridge
Middx UB11 1FW, UNITED KINGDOM
Phone: +44-1295-750-216/+44-1342-824451
FAX: +44-89-14005 446/447
Scotland Design Center
Integration House, The Alba Campus
Livingston West Lothian, EH54 7EG, SCOTLAND
Phone: +44-1506-605040
FAX: +44-1506-605041
14F, No. 7, Song Ren Road,
Taipei 110
Phone: +886-2-8786-6688
FAX: +886-2-8786-6677
1 HarbourFront Place,
#03-02 HarbourFront Tower One, Singapore 098633
Phone: +65-6586-5500
FAX: +65-6271-3182
SEIKO EPSON CORPORATION
KOREA OFFICE
50F, KLI 63 Bldg., 60 Yoido-dong
Youngdeungpo-Ku, Seoul, 150-763, KOREA
Phone: +82-2-784-6027
FAX: +82-2-767-3677
GUMI OFFICE
2F, Grand B/D, 457-4 Songjeong-dong,
Gumi-City, KOREA
Phone: +82-54-454-6027
FAX: +82-54-454-6093
SEIKO EPSON CORPORATION
SEMICONDUCTOR OPERATIONS DIVISION
IC Sales Dept.
IC International Sales Group
421-8, Hino, Hino-shi, Tokyo 191-8501, JAPAN
Phone: +81-42-587-5814
FAX: +81-42-587-5117
Document Code: 410800400
First Issue October 2006
H
Printed in JAPAN ○