datasheet for VL31B1G63A

datasheet for VL31B1G63A
Product Specifications
PART NO.:
VL31B1G63A-K0/K9/F8/E7S
REV: 1.0
General Information
8GB 1Gx72 DDR3 SDRAM ECC UNBUFFERED DIMM 240-PIN
Description
The VL31B1G63A is a 1Gx72 DDR3 SDRAM high density UDIMM. This memory module is dual rank, consists of
eighteen CMOS 512Mx8 bits with 8 banks DDR3 synchronous DRAMs in BGA packages, and a 2K EEPROM in an 8pin MLF package. This module is a 240-pin dual in-line memory module and is intended for mounting into an edge
connector socket. Decoupling capacitors are mounted on the printed circuit board for each DDR3 SDRAM.
Features
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
Pin Description
240-pin, unbuffered dual in-line memory module (UDIMM)
Supports ECC error detection and correction
Fast data transfer rates: PC3-12800, PC3-10600, PC3-8500, PC3-6400
VDD = VDDQ = 1.5V +/-0.075V
JEDEC standard 1.5V +/-0.075V I/O (SSTL_15 )
VDDSPD = 3.0V to 3.6V
Eight internal component banks for concurrent operation
8-bit pre-fetch architecture
Bi-directional differential data-strobe
Nominal and dynamic on-die termination (ODT)
ZQ calibration support
Programmable CAS# latency:
11 (DDR3-1600), 9 (DDR3-1333), 7 (DDR3-1066), 6 (DDR3-800)
Programmable burst; length (8)
Average refresh period 7.8 us
Asynchronous reset
Fly-by topology
On board terminated command, address, and control bus
Serial presence detect (SPD) with EEPROM
Gold edge contacts
Lead-free, RoHS compliant
PCB: Height 30.00mm (1.181”), double sided component
Operating temperature (TOPER): - Commercial (0oC <= Tc <= 95oC)
- Industrial (-40oC <= Tc <= 95oC)
o
o
Notes: Double refresh rate is required when 85 C < TOPER <= 95 C.
TOPER is DRAM case temperature (Tc).
Order Information:
VL31B1G63A - K0 S X - X
OPERATING TEMPERATURE
None: Commercial
S1: Industrial screening
DRAM DIE (Option)
DRAM MANUFACTURER
S - SAMSUNG
MODULE SPEED
K0: PC3-12800 @ CL11
K9: PC3-10600 @ CL9
F8: PC3-8500 @ CL7
E7: PC3-6400 @ CL6
Pin Name
Function
A0~A15
Address Inputs
A10/AP
Address Input/ Autoprecharge
A12/BC#
Address Input/ Burst Chop
BA0~BA2
Bank Address Inputs
DQ0~DQ63
Data Input/Output
DQS0~DQS8
Data Strobes
DQS0#~DQS8#
Data Strobes Complement
DM0~DM8
Data Masks
CB0~CB7
Data Check Bits I/O
CK0, CK0#, CK1, CK1#
Clock Input
ODT0, ODT1
On-die Termination Control
CKE0, CKE1
Clock Enables
CS0#, CS1#
Chip Selects
RAS#
Row Address Strobes
CAS#
Column Address Strobes
WE#
Write Enable
RESET#
Register and SDRAM Control
VDD
Voltage Supply
VSS
Ground
SA0~SA2
SPD Address
SDA
SPD Data Input/Output
SCL
SPD Clock Input
VREFCA
Reference Voltage for CA
VREFDQ
Reference Voltage for DQ
VDDSPD
SPD Voltage Supply
VTT
Termination Voltage
NC
No Connect
VL: Lead-free/RoHS
DRAM component: Samsung K4B2G0846D-HCK0 (Lead-free/RoHS)
Tel 949.888.2444 – 30052 Tomas, Rancho Santa Margarita, CA 92688 USA – w w w .virtium.com
1
Product Specifications
PART NO.:
VL31B1G63A-K0/K9/F8/E7S
REV: 1.0
Pin Configuration
240-PIN DDR3 UDIMM FRONT SIDE
240-PIN DDR3 UDIMM BACK SIDE
Pin
Name
Pin
Name
Pin
Name
Pin
Name
Pin
Name
Pin
Name
Pin
Name
Pin
Name
1
VREFDQ
31
DQ25
61
A2
91
DQ41
121
VSS
151
VSS
181
A1
211
VSS
2
VSS
32
VSS
62
VDD
92
VSS
122
DQ4
152
DM3
182
VDD
212
DM5
3
DQ0
33
DQS3#
63
CK1
93
DQS5#
123
DQ5
153
NC
183
VDD
213
NC
4
DQ1
34
DQS3
64
CK1#
94
DQS5
124
VSS
154
VSS
184
CK0
214
VSS
5
VSS
35
VSS
65
VDD
95
VSS
125
DM0
155
DQ30
185
CK0#
215
DQ46
6
DQS0#
36
DQ26
66
VDD
96
DQ42
126
NC
156
DQ31
186
VDD
216
DQ47
7
DQS0
37
DQ27
67
VREFCA
97
DQ43
127
VSS
157
VSS
187 EVENT#*
217
VSS
8
VSS
38
VSS
68
PAR_IN *
98
VSS
128
DQ6
158
CB4
188
A0
218
DQ52
9
DQ2
39
CB0
69
VDD
99
DQ48
129
DQ7
159
CB5
189
VDD
219
DQ53
10
DQ3
40
CB1
70
A10/AP
100
DQ49
130
VSS
160
VSS
190
BA1
220
VSS
11
VSS
41
VSS
71
BA0
101
VSS
131
DQ12
161
DM8
191
VDD
221
DM6
12
DQ8
42
DQS8#
72
VDD
102
DQS6#
132
DQ13
162
NC
192
RAS#
222
NC
13
DQ9
43
DQS8
73
WE#
103
DQS6
133
VSS
163
VSS
193
CS0#
223
VSS
14
VSS
44
VSS
74
CAS#
104
VSS
134
DM1
164
CB6
194
VDD
224
DQ54
15
DQS1#
45
CB2
75
VDD
105
DQ50
135
NC
165
CB7
195
ODT0
225
DQ55
16
DQS1
46
CB3
76
CS1#
106
DQ51
136
VSS
166
VSS
196
A13
226
VSS
17
VSS
47
VSS
77
ODT1
107
VSS
137
DQ14
167
TEST *
197
VDD
227
DQ60
18
DQ10
48
VTT
78
VDD
108
DQ56
138
DQ15
168
RESET#
198
NC
228
DQ61
19
DQ11
49
VTT
79
NC
109
DQ57
139
VSS
169
CKE1
199
VSS
229
VSS
20
VSS
50
CKE0
80
VSS
110
VSS
140
DQ20
170
VDD
200
DQ36
230
DM7
21
DQ16
51
VDD
81
DQ32
111
DQS7#
141
DQ21
171
A15
201
DQ37
231
NC
22
DQ17
52
BA2
82
DQ33
112
DQS7
142
VSS
172
A14
202
VSS
232
VSS
23
VSS
53
ERR_OUT# *
83
VSS
113
VSS
143
DM2
173
VDD
203
DM4
233
DQ62
24
DQS2#
54
VDD
84
DQS4#
114
DQ58
144
NC
174
NC
234
DQ63
25
DQS2
55
A11
85
DQS4
115
DQ59
145
VSS
175
A9
205
VSS
235
VSS
26
VSS
56
A7
86
VSS
116
VSS
146
DQ22
176
VDD
206
DQ38
236
VDDSPD
27
DQ18
57
VDD
87
DQ34
117
SA0
147
DQ23
177
A8
207
DQ39
237
SA1
28
DQ19
58
A5
88
DQ35
118
SCL
148
VSS
178
A6
208
VSS
238
SDA
29
VSS
59
A4
89
VSS
119
SA2
149
DQ28
179
VDD
209
DQ44
239
VSS
30
DQ24
60
VDD
90
DQ40
120
VTT
150
DQ29
180
A3
210
DQ45
240
VTT
A12/ BC# 204
*: These pins are not used in this module.
Tel 949.888.2444 – 30052 Tomas, Rancho Santa Margarita, CA 92688 USA – w w w .virtium.com
2
Product Specifications
PART NO.:
VL31B1G63A-K0/K9/F8/E7S
REV: 1.0
Function Block Diagram
CS1#
CS0#
DQS0
DQS0#
DM0
DQS4
DQS4#
DM4
DM CS# DQS DQS#
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
ZQ
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
Vss
D0
DM CS# DQS DQS#
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
ZQ
DQ32
DQ33
DQ34
DQ35
DQ36
DQ37
DQ38
DQ39
D9
Vss
Vss
DQS1
DQS1#
DM1
DM CS# DQS DQS#
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
ZQ
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
Vss
D1
DQ40
DQ41
DQ42
DQ43
DQ44
DQ45
DQ46
DQ47
Vss
D10
Vss
DM CS# DQS DQS#
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
ZQ
DQ16
DQ17
DQ18
DQ19
DQ20
DQ21
DQ22
DQ23
Vss
D2
DQ48
DQ49
DQ50
DQ51
DQ52
DQ53
DQ54
DQ55
Vss
D11
Vss
DM CS# DQS DQS#
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
ZQ
DQ24
DQ25
DQ26
DQ27
DQ28
DQ29
DQ30
DQ31
Vss
D3
D13
Vss
DM CS# DQS DQS#
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
ZQ
D5
DM CS# DQS DQS#
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
ZQ
D14
Vss
DQS6
DQS6#
DM6
DM CS# DQS DQS#
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
ZQ
DQS3
DQS3#
DM3
D4
DM CS# DQS DQS#
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
ZQ
DQS5
DQS5#
DM5
DM CS# DQS DQS#
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
ZQ
DQS2
DQS2#
DM2
DM CS# DQS DQS#
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
ZQ
DM CS# DQS DQS#
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
ZQ
D6
DM CS# DQS DQS#
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
ZQ
D15
Vss
DQS7
DQS7#
DM7
DM CS# DQS DQS#
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
ZQ
DQ56
DQ57
DQ58
DQ59
DQ60
DQ61
DQ62
DQ63
Vss
D12
DM CS# DQS DQS#
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
ZQ
D7
DM CS# DQS DQS#
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
ZQ
DQ7
D16
Vss
Vss
DQS8
DQS8#
DM8
Command, address, control, and clock line terminations
DM CS# DQS DQS#
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
ZQ
CB0
CB1
CB2
CB3
CB4
CB5
CB6
CB7
Vss
D8
DM CS# DQS DQS#
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
ZQ
DQ7
A0-A15, BA0-BA2
RAS#, CAS#, WE#,
CS0#, CKE0, ODT0
CS1#, CKE1, ODT1
D17
DDR3
SDRAM
39 ohm +/-5%
VTT
36 ohm +/-5%
CK0, CK1
CK0#, CK1#
DDR3
SDRAM
VDD
0.1uF
Vss
CK0
SCL
SDA
WP
Vss
A0
A1
D0-D17
VTT
D0-D17
VREFCA
D0-D17
VREFDQ
D0-D17
VSS
D0-D17
A2
SA0 SA1 SA2
Serial PD
VDD
Notes:
CK1
D0-D8
CK0#
VDDSPD
Serial PD
A0-A15: SDRAMs D0-D17
BA0-BA2: SDRAMs D0-D17
RAS#: SDRAMs D0-D17
CAS#: SDRAMs D0-D17
WE#: SDRAMs D0-D17
CKE0: SDRAMs D0-D8
ODT0: SDRAMs D0-D8
CKE1: SDRAMs D9-D17
ODT1: SDRAMs D9-D17
RESET#: SDRAMs D0-D17
A0-A15
BA0-BA2
RAS#
CAS#
WE#
CKE0
ODT0
CKE1
ODT1
RESET#
D9-D17
CK1#
1. Unless otherw ise noted, resistor values are 15 ohms +/-5%
2. ZQ resistors are 240 ohms +/-1%
3.3pF
3.3pF
Tel 949.888.2444 – 30052 Tomas, Rancho Santa Margarita, CA 92688 USA – w w w .virtium.com
3
Product Specifications
PART NO.:
VL31B1G63A-K0/K9/F8/E7S
REV: 1.0
Absolute Maximum Ratings
Symbol
VDD
VDDQ
VIN, VOUT
TSTG
IL
IOZ
IVREF
MIN
MAX
Unit
Voltage on VDD pin relative to VSS
Parameter
-0.4
1.975
V
Voltage on VDDQ pin relative to VSS
-0.4
1.975
V
Voltage on any pin relative to VSS
-0.4
1.975
Storage temperature
Input leakage current; Any input 0V<VIN<VDD;
VREF input 0V<VIN<0.95V;
Other pins not under test = 0V
Output leakage current;
0V<VOUT<VDDQ; DQs and ODT are disabled
V
0
-55
100
Address, RAS#,
CAS#, WE#, BA
-36
36
uA
CS#, CKE, ODT
-18
18
uA
CK, CK#
-18
18
uA
DM
-4
4
uA
-10
10
uA
-18
18
uA
DQ, DQS, DQS#
VREF supply leakage current; VREF = Valid VREF level
C
DC Operating Conditions
Symbol
VDD
VDDQ
Parameter
Min
Typical
Max
Unit
Notes
Supply Voltage
1.425
1.5
1.575
V
1,2
I/O Supply Voltage
1.425
1.5
1.575
V
1,2
VREFDQ (DC)
I/O reference voltage DQ bus
0.49 x VDD
0.5 x VDD
0.51 x VDD
V
3,4
VREFCA (DC)
Input reference voltage CMD/ADD bus
0.49 x VDD
0.5 x VDD
0.51 x VDD
V
3,4
-0.483 x VDDQ
0.5 x VDDQ
+0.517 x VDDQ
V
5
VTT
Termination Reference Voltage
Notes:
1. Under all conditions VDDQ must be less than or equal to VDD.
2. VDDQ tracks with VDD. AC parameters are measured with VDD and VDDQ tied together.
3. The AC peak noise on VREF may not allow VREF to deviate from VREF(DC) by more than +/-1% VDD
4. For reference: approximate VDD/2 +/-15mV.
5. VTT termination voltage in excess of stated limit will adversely affect the command and address signals’ voltage margin and will reduce
timing margins.
Operating Temperature Condition
Symbol
TOPER
Parameter
Operating temperature
Rating
Commercial
Industrial
Units
0 to 95
-40 to +95
0
C
Notes
1,2
Notes:
1. Operating temperature is the case surface temperature on the center/top side of the DRAM. For the measurement conditions, please refer
to JEDEC JESD51-2.
o
2. At -40 to +85 C, operation temperature range, all DRAM specifications will be supported. The refresh rate is required to double when
o
o
85 C < TOPER <= 95 C.
Tel 949.888.2444 – 30052 Tomas, Rancho Santa Margarita, CA 92688 USA – w w w .virtium.com
4
Product Specifications
PART NO.:
VL31B1G63A-K0/K9/F8/E7S
REV: 1.0
Input DC Logic Level
All voltages referenced to VSS
Symbol
Parameter
Min
Max
Unit
Command and Address
VIHCA(DC)
Input High (Logic 1) Voltage (DDR3-800/1066/1333/1600)
VREF + 0.100
VDD
V
VILCA(DC)
Input Low (Logic 0) Voltage (DDR3-800/1066/1333/1600)
VSS
VREF - 0.100
V
VIHDQ(DC)
Input High (Logic 1) Voltage (DDR3-800/1066/1333/1600)
VREF + 0.100
VDD
V
VILDQ(DC)
Input Low (Logic 0) Voltage (DDR3-800/1066/1333/1600)
VSS
VREF - 0.100
V
Min
Max
Unit
DQ and DM
Input AC Logic Level
All voltages referenced to VSS
Symbol
Parameter
Command and Address
VIHCA(AC)
Input High (Logic 1) Voltage (DDR3-800/1066/1333/1600)
VREF + 0.175
-
V
VILCA(AC)
Input Low (Logic 0) Voltage (DDR3-800/1066/1333/1600)
-
VREF - 0.175
V
DQ and DM
VIHDQ(AC)
Input High (Logic 1) Voltage (DDR3-800/1066)
VREF + 0.175
-
V
VILDQ(AC)
Input Low (Logic 0) Voltage (DDR3-800/1066)
-
VREF - 0.175
V
VIHDQ(AC)
Input High (Logic 1) Voltage (DDR3-1333/1600)
VREF + 0.150
-
V
VILDQ(AC)
Input Low (Logic 0) Voltage (DDR3-1333/1600)
-
VREF - 0.150
V
Input/Output
Capacitance
0
Parameter
TA=25 C, f=100MHz
K0
K9
(DDR3-1600) (DDR3-1333)
Symbol
F8
(DDR3-1066)
E7
(DDR3-800)
Unit
Min
Max
Min
Max
Min
Max
Min
Max
CIN1
17.5
27.4
17.5
27.4
17.5
31
17.5
31
pF
CIN2
10.75
15.7
10.75
15.7
10.75
17.5
10.75
17.5
pF
Input capacitance (CK0, CK0#), (CK1, CK1#)
CIN3
11.2
16.6
11.2
16.6
11.2
18.4
11.2
18.4
pF
Input/Output capacitance (DQ, DQS, DQS#, CB, DM)
CIO
7
8.6
7
9
7
9.4
7
10
pF
Input capacitance (A0~A15, BA0~BA2, RAS#,
CAS#, WE#)
Input capacitance (CKE0, CKE1), (ODT0, ODT1),
(CS0#, CS1#)
Tel 949.888.2444 – 30052 Tomas, Rancho Santa Margarita, CA 92688 USA – w w w .virtium.com
5
Product Specifications
PART NO.:
VL31B1G63A-K0/K9/F8/E7S
REV: 1.0
IDD Specification
Condition
Symbol
K0
K9
F8
E7
(DDR3-1600) (DDR3-1333) (DDR3-1066) (DDR3-800)
Unit
Operating one bank active-precharge current;
tCK= tCK(IDD); tRC= tRC(IDD); tRAS= tRAS MIN(IDD); CKE
is HIGH, CS# is HIGH between valid commands; Address bus
inputs are SWITCHING; Data bus inputs are SWITCHING.
IDD0*
675
630
585
585
mA
Operating one bank active-read-precharge current;
IOUT = 0mA; BL = 8; CL = CL(IDD); AL = 0; tCK= tCK(IDD);
tRC= tRC(IDD); tRAS= tRAS MIN(IDD); tRCD= tRCD(IDD);
CKE is HIGH, CS# is HIGH between valid commands; Address
bus inputs are SWITCHING; Data pattern is same as IDD4W.
IDD1*
810
765
720
720
mA
IDD2P-F**
360
360
360
360
mA
IDD2P-S**
270
270
270
270
mA
IDD2N**
540
540
450
450
mA
IDD2Q**
540
450
450
450
mA
IDD3P**
540
450
450
450
mA
IDD3N**
900
810
720
720
mA
IDD4R*
1260
1125
990
990
mA
IDD4W*
1395
1305
1080
1080
mA
IDD5**
3240
3060
2790
2790
mA
IDD6**
270
270
270
270
mA
IDD7*
2025
1980
1620
1620
mA
Precharge power-down current;
All device banks idle; tCK= tCK(IDD); CKE is LOW; Other
control and address bus inputs are STABLE; Data bus inputs
are FLOATING.
Precharge standby current;
All device banks idle; tCK= tCK(IDD); CKE is HIGH; CS# is
HIGH; Other control and address bus inputs are SWITCHING;
Data bus inputs are SWITCHING.
Precharge quiet standby current;
All device banks idle; tCK= tCK(IDD); CKE is HIGH; CS# is
HIGH; Other control and address bus inputs are STABLE;
Data bus inputs are FLOATING.
Active power-down current;
All device banks open; tCK= tCK(IDD); CKE is LOW; Other
control and address bus inputs are STABLE; Data bus inputs
are FLOATING.
Active standby current;
All device banks open; tCK= tCK(IDD); tRP= tRP(IDD); tRAS=
tRAS MAX(IDD)); CKE is HIGH, CS# is HIGH between valid
commands; Other control and address bus inputs are
SWITCHING; Data bus inputs are SWITCHING.
Operating burst read current;
All device banks open; Continuous burst reads; IOUT = 0mA;
BL = 8; CL = CL(IDD); AL = 0; tCK= tCK(IDD); tRAS= tRAS
MAX(IDD); tRP= tRP(IDD); CKE is HIGH, CS# is HIGH
between valid commands; Address bus inputs are
SWITCHING; Data pattern is same as IDD4W.
Operating burst write current;
All device banks open; Continuous burst writes; BL = 8; CL =
CL(IDD); AL = 0; tCK= tCK(IDD); tRAS= tRAS MAX(IDD);
tRP= tRP(IDD); CKE is HIGH, CS# is HIGH between valid
commands; Address bus inputs are SWITCHING; Data bus
inputs are SWITCHING.
Burst refresh current;
tCK=tCK(IDD); Refresh command at every tRFC(IDD)
interval; CKE is HIGH; CS# is HIGH between valid commands;
Other control and address bus inputs are SWITCHING; Data
bus inputs are SWITCHING.
Self refresh current;
CK and CK# at 0V; CKE < 0.2V; Other control and address
bus inputs are FLOATING; Data bus inputs are FLOATING.
Operating bank interleave read current;
All bank interleaving reads; IOUT = 0mA; BL = 8; CL =
CL(IDD); AL = tRCD(IDD) - 1*tCK(IDD); tCK= tCK(IDD); tRC=
tRC(IDD); tRRD = tRRD(IDD); tRCD = 1*tCK(IDD) ; CKE is
HIGH; CS# is HIGH between valid commands; Address bus
inputs are STABLE during DESELECTs; Data pattern is same
as IDD4R.
Notes: IDD specification is based on Samsung A-die components.
*: Value calculated as one module rank in this operating condition, and all other module ranks in IDD2P (CKE LOW) mode.
**: Value calculated reflects all module ranks in this operating condition.
Tel 949.888.2444 – 30052 Tomas, Rancho Santa Margarita, CA 92688 USA – w w w .virtium.com
6
Product Specifications
PART NO.:
VL31B1G63A-K0/K9/F8/E7S
REV: 1.0
AC TIMING PARAMETERS & SPECIFICATIONS
Parameter
Symbol
K0
(DDR3-1600)
K9
(DDR3-1333)
F8
(DDR3-1066)
E7
(DDR3-800)
Unit
MIN
MAX
MIN
MAX
MIN
MAX
MIN
MAX
8
-
8
-
8
-
8
-
ns
1.25
<1.50
1.5
<1.875
1.875
<2.5
2.5
3.3
ns
Clock Timing
Minimum Clock Cycle Time (DLL off mode)
Average Clock Period
tCK(DLL_OFF)
tCK(avg)
tCK(avg)min tCK(avg)max tCK(avg)min tCK(avg)max tCK(avg)min tCK(avg)max tCK(avg)min tCK(avg)max
+
+
+
+
+
+
+
+
tJIT(per)min tJIT(per)max tJIT(per)min tJIT(per)max tJIT(per)min tJIT(per)max tJIT(per)min tJIT(per)max
Clock Period
tCK(abs)
Average high pulse width
tCH(avg)
0.47
0.53
0.47
0.53
0.47
0.53
0.47
0.53
tCK(avg)
Average low pulse width
tCL(avg)
0.47
0.53
0.47
0.53
0.47
0.53
0.47
0.53
tCK(avg)
Clock Period Jitter
tJIT(per)
-70
70
-80
80
-90
90
-100
100
ps
tJIT(per, lck)
-60
60
-70
70
-80
80
-90
90
ps
Clock Period Jitter during DLL locking period
Cycle to Cycle Period Jitter
ns
tJIT(cc)
140
160
180
200
ps
Cycle to Cycle Period Jitter during DLL
locking period
tJIT(cc, lck)
120
140
160
180
ps
Cumulative error across 2 cycles
tERR(2per)
-103
103
-118
118
-132
132
-147
147
ps
Cumulative error across 3 cycles
tERR(3per)
-122
122
-140
140
-157
157
-175
175
ps
Cumulative error across 4 cycles
tERR(4per)
-136
136
-155
155
-175
175
-194
194
ps
Cumulative error across 5 cycles
tERR(5per)
-147
147
-168
168
-188
188
-209
209
ps
Cumulative error across 6 cycles
tERR(6per)
-155
155
-177
177
-200
200
-222
222
ps
Cumulative error across 7 cycles
tERR(7per)
-163
163
-186
186
-209
209
-232
232
ps
Cumulative error across 8 cycles
tERR(8per)
-169
169
-193
193
-217
217
-241
241
ps
Cumulative error across 9 cycles
tERR(9per)
-175
175
-200
200
-224
224
-249
249
ps
Cumulative error across 10 cycles
tERR(10per)
-180
180
-205
205
-231
231
-257
257
ps
Cumulative error across 11 cycles
tERR(11per)
-184
184
-210
210
-237
237
-263
263
ps
Cumulative error across 12 cycles
tERR(12per)
-188
188
-215
215
-242
242
-269
269
ps
Cumulative error across n = 13, 14 ... 49, 50
cycles
tERR(nper)
tERR(nper)min =(1+ 0.68ln(n))*tJIT(per)min
tERR(nper)max=(1+ 0.68ln(n))*tJIT(per)max
ps
Absolute clock HIGH pulse width
tCH(abs)
0.43
-
0.43
-
0.43
-
0.43
-
tCK(avg)
Absolute clock Low pulse width
tCL(abs)
0.43
-
0.43
-
0.43
-
0.43
-
tCK(avg)
DQS,DQS# to DQ skew, per group, per
access
tDQSQ
-
100
-
125
-
150
-
200
ps
DQ output hold time from DQS, DQS#
tQH
0.38
-
0.38
-
0.38
-
0.38
-
tCK(avg)
DQ low-impedance time from CK, CK#
tLZ(DQ)
-450
225
-500
250
-600
300
-800
400
ps
DQ high-impedance time from CK, CK#
tHZ(DQ)
-
225
-
250
-
300
-
400
ps
tDS(base)
10
-
30
-
25
-
75
-
ps
tDH(base)
45
-
65
-
100
-
150
-
ps
tDIPW
360
-
400
-
490
-
600
-
ps
Data Timing
Data setup time to DQS, DQS# referenced
to Vih(ac)Vil(ac) levels
Data hold time to DQS, DQS# referenced to
Vih(ac)Vil(ac) levels
DQ and DM Input pulse width for each input
Tel 949.888.2444 – 30052 Tomas, Rancho Santa Margarita, CA 92688 USA – w w w .virtium.com
7
Product Specifications
PART NO.:
VL31B1G63A-K0/K9/F8/E7S
REV: 1.0
AC TIMING PARAMETERS & SPECIFICATIONS
Parameter
Symbol
K0
(DDR3-1600)
K9
(DDR3-1333)
F8
(DDR3-1066)
E7
(DDR3-800)
MIN
MAX
MIN
MAX
MIN
MAX
MIN
MAX
Unit
Data Strobe Timing
DQS, DQS# READ Preamble
tRPRE
0.9
-
0.9
-
0.9
-
0.9
-
tCK
DQS, DQS# differential READ Postamble
tRPST
0.3
-
0.3
-
0.3
-
0.3
-
tCK
DQS, DQS# output high time
tQSH
0.4
-
0.4
-
0.38
-
0.38
-
tCK(avg)
DQS, DQS# output low time
tQSL
0.4
-
0.4
-
0.38
-
0.38
-
tCK(avg)
DQS, DQS# WRITE Preamble
tWPRE
0.9
-
0.9
-
0.9
-
0.9
-
tCK
DQS, DQS# WRITE Postamble
tWPST
0.3
-
0.3
-
0.3
-
0.3
-
tCK
tDQSCK
-225
225
-255
255
-300
300
-400
400
ps
tLZ(DQS)
-450
225
-500
250
-600
300
-800
400
ps
tHZ(DQS)
-
225
-
250
-
300
-
400
ps
tDQSL
0.45
0.55
0.45
0.55
0.45
0.55
0.45
0.55
tCK
tDQSH
0.45
0.55
0.45
0.55
0.45
0.55
0.45
0.55
tCK
tDQSS
-0.27
0.27
-0.25
0.25
-0.25
0.25
-0.25
0.25
tCK(avg)
tDSS
0.18
-
0.2
-
0.2
-
0.2
-
tCK(avg)
tDSH
0.18
-
0.2
-
0.2
-
0.2
-
tCK(avg)
DLL locking time
tDLLK
512
-
512
-
512
-
512
-
nCK
Internal READ Command to PRECHARGE
Command delay
tRTP
max
(4tCK,7.5ns)
-
max
(4tCK,7.5ns)
-
max
(4tCK,7.5ns)
-
max
(4tCK,7.5ns)
-
tWTR
max
(4tCK,7.5ns)
-
max
(4tCK,7.5ns)
-
max
(4tCK,7.5ns)
-
max
(4tCK,7.5ns)
-
tWR
15
-
15
-
15
-
15
-
ns
tMRD
4
-
4
-
4
-
4
-
nCK
Mode Register Set command update delay
tMOD
max
(12tCK,15ns)
-
max
(12tCK,15ns)
-
max
(12tCK,15ns)
-
max
(12tCK,15ns)
-
CAS# to CAS# command delay
tCCD
4
-
4
-
4
-
4
-
DQS, DQS# rising edge output access time
from rising CK, CK#
DQS, DQS# low-impedance time
(Referenced from
DQS, DQS# high-impedance time
(Referenced from RL+BL/ 2)
DQS, DQS# differential input low pulse width
DQS, DQS# differential input high pulse
width
DQS, DQS# rising edge to CK, CK# rising
edge
DQS,DQS# failing edge setup time to CK,
CK# rising edge
DQS,DQS# failing edge hold time to CK,
CK# rising edge
Command and Address Timing
Delay from start of internal write transaction
to internal read command
WRITE recovery time
Mode Register Set command cycle time
Auto precharge write recovery + precharge
time
Multi-Purpose Register Recovery Time
ACTIVE to PRECHARGE command period
tDAL(min)
tMPRR
nCK
WR + roundup (tRP / tCK(AVG))
1
-
nCK
1
-
1
-
1
-
nCK
ns
tRAS
35
9*tREFI
36
9*tREFI
37.5
9*tREFI
37.5
9*tREFI
ACTIVE to ACTIVE command period for
1KB page size
tRRD
max
(4tCK,6ns)
-
max
(4tCK,6ns)
-
max
(4tCK,7.5ns)
-
max
(4tCK,10ns)
-
ACTIVE to ACTIVE command period for
2KB page size
tRRD
max
(4tCK,7.5ns)
-
max
(4tCK,7.5ns)
-
max
(4tCK,10ns)
-
max
(4tCK,10ns)
-
Four activate window for 1KB page size
tFAW
30
-
30
-
37.5
-
40
-
ns
Four activate window for 2KB page size
tFAW
40
-
45
-
50
-
50
-
ns
Command and Address setup time to CK,
CK# referenced to Vih(ac) / Vil(ac) levels
tIS(base)
45
-
65
-
125
-
200
-
ps
Command and Address hold time from CK,
CK# referenced to Vih(ac) / Vil(ac) levels
tIH(base)
120
-
140
-
200
-
275
-
ps
tIPW
560
-
620
-
780
-
900
-
ps
Control & Address Input pulse width for each
input
Tel 949.888.2444 – 30052 Tomas, Rancho Santa Margarita, CA 92688 USA – w w w .virtium.com
8
Product Specifications
PART NO.:
VL31B1G63A-K0/K9/F8/E7S
REV: 1.0
AC TIMING PARAMETERS & SPECIFICATIONS
Parameter
Symbol
K0
(DDR3-1600)
K9
(DDR3-1333)
F8
(DDR3-1066)
E7
(DDR3-800)
MIN
MAX
MIN
MAX
MIN
MAX
MIN
MAX
Unit
Refresh Timing
4Gb REFRESH to REFRESH or REFRESH
to ACTIVE command interval
tRFC
300
-
300
-
300
-
300
-
ns
Average periodic refresh interval
(0°C<= TCASE <= 85 °C)
tREFI
7.8
-
7.8
-
7.8
-
7.8
-
us
Average periodic refresh interval
(85°C<= TCASE <= 95 °C)
tREFI
3.9
-
3.9
-
3.9
-
3.9
-
us
Power-up and RESET calibration time
tZQinitI
512
-
512
-
512
-
512
-
tCK
Normal operation Full calibration time
tZQoper
256
-
256
-
256
-
256
-
tCK
Normal operation Short calibration time
tZQCS
64
-
64
-
64
-
64
-
tCK
tXPR
max
(5tCK, tRFC
+ 10ns)
-
max
(5tCK, tRFC
+ 10ns)
-
max
(5tCK, tRFC
+ 10ns)
-
max
(5tCK, tRFC
+ 10ns)
-
tXS
max(5tC,
tRFC+10ns)
-
max(5tC,
tRFC+10ns)
-
max(5tC,
tRFC +10ns)
-
max(5tC,
tRFC +10ns)
-
Exit Self Refresh to commands requiring a
locked DLL
tXSDLL
tDLLK(min)
-
tDLLK(min)
-
tDLLK(min)
-
tDLLK(min)
-
Minimum CKE low width for Self refresh
entry to exit timing
tCKESR
tCKE(min) +
1tCK
-
tCKE(min) +
1tCK
-
tCKE(min) +
1tCK
-
tCKE(min) +
1tCK
-
Valid Clock Requirement after Self Refresh
Entry (SRE)
tCKSRE
max(5tC,
10ns)
-
max(5tCK,
10ns)
-
max(5tCK,
10ns)
-
max(5tCK,
10ns)
-
Valid Clock Requirement before Self
Refresh Exit (SRX)
tCKSRX
max(5tC,
10ns)
-
max(5tCK,
10ns)
-
max(5tCK,
10ns)
-
max(5tCK,
10ns)
-
tXP
max
(3tCK,6ns)
-
max
(3tCK,6ns)
-
max
(3tCK,7.5ns)
-
max
(3tCK,7.5ns)
-
tXPDLL
max
(10tCK,24ns)
-
max
(10tCK,24ns)
-
max
(10tCK,24ns)
-
max
(10tCK,24ns)
-
tCKE
max (3tCK,
5.625ns)
-
max (3tCK,
5.625ns)
-
max (3tCK,
5.625ns)
-
max (3tCK,
7.5ns)
-
tCPDED
1
-
1
-
1
-
1
-
nCK
tPD
tCKE(min)
9*tREFI
tCKE(min)
9*tREFI
tCKE(min)
9*tREFI
tCKE(min)
9*tREFI
tCK
Timing of ACT command to Power Down
entry
tACTPDEN
1
-
1
-
1
-
1
-
nCK
Timing of PRE command to Power Down
entry
tPRPDEN
1
-
1
-
1
-
1
-
nCK
Timing of RD/RDA command to Power
Down entry
tRDPDEN
RL + 4 +1
-
RL + 4 +1
-
RL + 4 +1
-
RL + 4 +1
-
tWRPDEN
WL + 4
+(tWR/ tCK)
-
WL + 4
+(tWR/ tCK)
-
WL + 4
+(tWR/ tCK)
-
WL + 4
+(tWR/ tCK)
-
nCK
tWRAPDEN
WL+4+WR+
1
-
WL+4+WR+1
-
WL+4+WR+1
-
WL+4+WR+1
-
nCK
-
WL + 2
+(tWR/ tCK)
-
WL + 2
+(tWR/ tCK)
-
nCK
nCK
Calibration Timing
Reset Timing
Exit Reset from CKE HIGH to a valid
command
Self Refresh Timing
Exit Self Refresh to commands not requiring
a locked DLL
nCK
Power Down Timing
Exit Power Down with DLL to any valid
command; Exit Precharge Power Down with
DLL frozen to commands not requiring a
locked DLL
Exit Precharge Power Down with DLL frozen
to commands requiring a locked DLL
CKE minimum pulse width
Command pass disable delay
Power Down Entry to Exit Timing
Timing of WR command to Power Down
entry BL8 (OTF, MRS), BL4OTF
Timing of WRA command to Power Down
entry BL8 (OTF, MRS), BL4OTF
Timing of WR command to Power Down
entry (BL4MRS)
tWRPDEN
WL + 2
+(tWR/ tCK)
-
WL + 2
+(tWR/ tCK)
Timing of WRA command to Power Down
entry (BL4MRS)
tWRAPDEN
WL+2+WR+
1
-
WL+2+WR+1
-
WL+2+WR+1
-
WL+2+WR+1
-
Timing of REF command to Power Down
entry
tREFPDEN
1
-
1
-
1
-
1
-
Timing of MRS command to Power Down
entry
tMRSPDEN
tMOD(min)
-
tMOD(min)
-
tMOD(min)
-
tMOD(min)
-
Tel 949.888.2444 – 30052 Tomas, Rancho Santa Margarita, CA 92688 USA – w w w .virtium.com
9
Product Specifications
PART NO.:
VL31B1G63A-K0/K9/F8/E7S
REV: 1.0
AC TIMING PARAMETERS & SPECIFICATIONS
Parameter
Symbol
K0
(DDR3-1600)
K9
(DDR3-1333)
F8
(DDR3-1066)
E7
(DDR3-800)
MIN
MAX
MIN
MAX
MIN
MAX
MIN
MAX
Unit
ODT Timing
ODT high time without write command or
with write command and BC4
ODTH4
4
-
4
-
4
-
4
-
nCK
ODT high time with Write command and BL8
ODTH8
6
-
6
-
6
-
6
-
nCK
Asynchronous RTT turn-on delay (PowerDown with DLL frozen)
tAONPD
2
8.5
2
8.5
2
8.5
2
8.5
ns
Asynchronous RTT turn-off delay (PowerDown with DLL frozen)
tAOFPD
2
8.5
2
8.5
2
8.5
2
8.5
ns
ODT turn-on
tAON
-225
225
-250
250
-300
300
-400
400
ps
RTT_NOM and RTT_WR turn-off time from
ODTL off reference
tAOF
0.3
0.7
0.3
0.7
0.3
0.7
0.3
0.7
tCK(avg)
RTT dynamic change skew
tADC
0.3
0.7
0.3
0.7
0.3
0.7
0.3
0.7
tCK(avg)
tWLMRD
40
-
40
-
40
-
40
-
tCK
tWLDQSEN
25
-
25
-
25
-
25
-
tCK
Setup time for tDQSS latch
tWLS
165
-
195
-
245
-
325
-
ps
Hold time for tDQSS latch
tWLH
165
-
195
-
245
-
325
-
ps
Write leveling output delay
tWLO
0
7.5
0
9
0
9
0
9
ns
Write leveling output error
tWLOE
0
2
0
2
0
2
0
2
ns
Write Leveling Timing
First DQS pulse rising edge after tDQSS
margining mode is programmed
DQS/DQS delay after tDQS margining mode
is programmed
Tel 949.888.2444 – 30052 Tomas, Rancho Santa Margarita, CA 92688 USA – w w w .virtium.com
10
Product Specifications
PART NO.:
VL31B1G63A-K0/K9/F8/E7S
REV: 1.0
Package Dimensions
FRONT VIEW
133.35
3.67
MAX
0.70 R MAX
(8X)
30.00
2.50 D
(2X)
17.30
2.30 TYP
2.20 TYP
1.50 TYP
1.50 +/-0.10
PIN 1
0.75 R
9.50
1.00
TYP
54.68
TYP
0.80
TYP
1.27 +/-0.10
PIN 120
123.00
TYP
BACK VIEW
3.00 TYP
(4X)
3.05 TYP
5.00
TYP
PIN 240
5.175 (2X)
71.00
TYP
PIN 121
47.00
TYP
Note: 1. All dimensions are in millimeters with tolerance +/- 0.15mm unless otherwise specified.
2. The dimensional diagram is for reference only.
Tel 949.888.2444 – 30052 Tomas, Rancho Santa Margarita, CA 92688 USA – w w w .virtium.com
11
Product Specifications
PART NO.:
VL31B1G63A-K0/K9/F8/E7S
REV: 1.0
Revision History:
Date
04/28/2011
Rev.
Page
1.0
All
Changes
Spec released
Tel 949.888.2444 – 30052 Tomas, Rancho Santa Margarita, CA 92688 USA – w w w .virtium.com
12
Was this manual useful for you? yes no
Thank you for your participation!

* Your assessment is very important for improving the work of artificial intelligence, which forms the content of this project

Download PDF

advertisement