BCR16LM-12LB Datasheet
Preliminary
BCR16LM-12LB
Triac
REJ03G1805-0100
Rev.1.00
Jul 22, 2009
Medium Power Use
Features
•
•
•
•
• The Product guaranteed maximum junction
temperature 150°C
• Insulated Type
• Planar Passivation Type
IT (RMS) : 16 A
VDRM : 600 V
IFGT I, IRGT I, IRGT III : 30 mA
Viso : 1800 V
Outline
RENESAS Package code: PRSS0003AF-A)
(Package name: TO-220FL)
2
3
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
1
1
2 3
Applications
Switching mode power supply, copying machine, motor control, heater control, and other general purpose control
applications.
Maximum Ratings
Parameter
Voltage class
12
600
720
Symbol
Note1
Repetitive peak off-state voltage
Non-repetitive peak off-state voltageNote1
Notes: 1. Gate open.
VDRM
VDSM
Parameter
RMS on-state current
Symbol
IT (RMS)
Ratings
16
Unit
A
Surge on-state current
ITSM
160
A
I2 t
106.5
A2s
PGM
PG (AV)
VGM
IGM
Tj
Tstg
—
Viso
5
0.5
10
2
–40 to +150
–40 to +150
1.5
1800
W
W
V
A
°C
°C
g
V
I2t for fusion
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction Temperature
Storage temperature
Mass
Isolation voltage
Notes: 1. Gate open.
REJ03G1805-0100 Rev.1.00 Jul 22, 2009
Page 1 of 7
Unit
V
V
Conditions
Commercial frequency, sine full wave
360°conduction, Tc = 87°C
60 Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60 Hz, surge on-state current
Typical value
Ta = 25°C, AC 1 minute,
T1 • T2 • G terminal to case
BCR16LM-12LB
Preliminary
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Symbol
IDRM
VTM
Min.
—
—
Typ.
—
—
Max.
2.0
1.5
Unit
mA
V
Test conditions
Tj = 150°C, VDRM applied
Tc = 25°C, ITM = 25 A,
instantaneous measurement
Gate trigger voltageNote2
Ι
ΙΙ
ΙΙΙ
VFGTΙ
VRGTΙ
VRGTΙΙΙ
—
—
—
—
—
—
1.5
1.5
1.5
V
V
V
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
Gate trigger curentNote2
Ι
ΙΙ
ΙΙΙ
IFGTΙ
IRGTΙ
IRGTΙΙΙ
—
—
—
—
—
—
30
30
30
mA
mA
mA
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
VGD
Rth (j-c)
0.2/0.1
—
—
—
—
3.5
V
°C/W
Tj = 125°C/150°C, VD = 1/2 VDRM
Junction to caseNote3
(dv/dt)c
10/1
—
—
V/µs
Tj = 125°C/150°C
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
Note4
commutation voltage
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W.
4. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below.
Test conditions
1. Junction temperature
Tj = 125°C/150°C
2. Rate of decay of on-state commutating current
(di/dt)c = –8.0 A/ms
3. Peak off-state voltage
VD = 400 V
REJ03G1805-0100 Rev.1.00 Jul 22, 2009
Page 2 of 7
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
(di/dt)c
Time
Main Voltage
(dv/dt)c
Time
VD
BCR16LM-12LB
Preliminary
Performance Curves
103
7
5
3
2
Tj = 150°C
101
7
5
3
2
Tj = 25°C
1.0
1.5
2.5
3.0
3.5
140
120
100
80
60
40
20
0
100
4.0
2 3 4 5 7 101
2 3 4 5 7 102
Gate Characteristics (I, II and III)
Gate Trigger Current vs.
Junction Temperature
PG(AV) = 0.5W
PGM = 5W
IGM = 2A
100
7
5
3
2
10–1
7 IFGT I, IRGT I, IRGT III
VGD = 0.1V
5
1
2
10 2 3 5 7 10 2 3 5 7 103 2 3 5 7 104
Gate Trigger Voltage (Tj = t°C)
× 100 (%)
Gate Trigger Voltage (Tj = 25°C)
160
Conduction Time (Cycles at 60Hz)
101
7
5
3 VGT = 1.5V
2
103
7
5
4
3
2
180
On-State Voltage (V)
3
2 VGM = 10V
Gate Voltage (V)
2.0
Gate Trigger Current (Tj = t°C)
× 100 (%)
Gate Trigger Current (Tj = 25°C)
0.5
Surge On-State Current (A)
200
102
7
5
3
2
100
Rated Surge On-State Current
103
7
5
4
3
2
Typical Example
IRGT III
102
7
5
4
3
2
IFGT I, IRGT I
101
–60 –40 –20 0 20 40 60 80 100 120 140 160
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage vs.
Junction Temperature
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
Typical Example
102
7
5
4
3
2
101
–60 –40 –20 0 20 40 60 80 100 120 140 160
Junction Temperature (°C)
REJ03G1805-0100 Rev.1.00 Jul 22, 2009
Page 3 of 7
Transient Thermal Impedance (°C/W)
On-State Current (A)
Maximum On-State Characteristics
102
4.0
103
104
100
101
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10–1
102
Conduction Time (Cycles at 60Hz)
BCR16LM-12LB
Preliminary
103
7
5
3
2
Maximum On-State Power Dissipation
40
No Fins
On-State Power Dissipation (W)
Transient Thermal Impedance (°C/W)
Maximum Transient Thermal Impedance
Characteristics (Junction to ambient)
102
7
5
3
2
101
7
5
3
2
100
7
5
3
2
10–1
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105
25
20
15
10
5
0
4
6
8 10 12 14 16 18 20
Allowable Case Temperature vs.
RMS On-State Current
Allowable Ambient Temperature vs.
RMS On-State Current
160
120
100
80
60
40
360° Conduction
Resistive,
inductive loads
20
0
2
4
6
Ambient Temperature (°C)
Curves apply regardless
of conduction angle
8 10 12 14 16 18 20
140
All fins are black painted
aluminum and greased
120
100
80
120 120 t2.3
100 100 t2.3
60 60 t2.3
60 Curves apply
regardless of
40 conduction angle
Resistive,
20 inductive loads
Natural convection
0
0 2 4 6 8 10 12 14 16 18 20
RMS On-State Current (A)
RMS On-State Current (A)
Allowable Ambient Temperature vs.
RMS On-State Current
Repetitive Peak Off-State Current vs.
Junction Temperature
160
Natural convection
No Fins
Curves apply regardless
of conduction angle
Resistive, inductive loads
140
120
100
80
60
40
20
0
2
RMS On-State Current (A)
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
RMS On-State Current (A)
REJ03G1805-0100 Rev.1.00 Jul 22, 2009
Page 4 of 7
Repetitive Peak Off-State Current (Tj = t°C)
× 100 (%)
Repetitive Peak Off-State Current (Tj = 25°C)
Case Temperature (°C)
360° Conduction
Resistive,
inductive loads
Conduction Time (Cycles at 60Hz)
140
Ambient Temperature (°C)
30
0
160
0
35
5
3 Typical Example
2
105
7
5
3
2
104
7
5
3
2
103
7
5
3
2
102
–60 –40 –20 0 20 40 60 80 100 120 140160
Junction Temperature (°C)
BCR16LM-12LB
Preliminary
103
7
5
4
3
2
Latching Current vs.
Junction Temperature
Latching Current (mA)
Typical Example
102
7
5
4
3
2
101
–60 –40 –20 0 20 40 60 80 100 120 140 160
103
7
5
3
2
Distribution
T2+, G–
Typical Example
102
7
5
3
2
101
7
5
3
2
T2+, G+
Typical Example
T2–, G–
100
–40
0
40
80
120
160
Junction Temperature (°C)
Breakover Voltage vs.
Junction Temperature
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=125°C)
160
Typical Example
140
120
100
80
60
40
20
0
–60 –40 –20 0 20 40 60 80 100 120 140 160
Breakover Voltage (dv/dt = xV/µs)
× 100 (%)
Breakover Voltage (dv/dt = 1V/µs)
Junction Temperature (°C)
160
Typical Example
Tj = 125°C
140
120
III Quadrant
100
80
60
40
I Quadrant
20
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
Junction Temperature (°C)
Rate of Rise of Off-State Voltage (V/µs)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=150°C)
Commutation Characteristics (Tj=125°C)
160
Typical Example
Tj = 150°C
140
120
100
III Quadrant
80
60
40
I Quadrant
20
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
Rate of Rise of Off-State Voltage (V/µs)
REJ03G1805-0100 Rev.1.00 Jul 22, 2009
Page 5 of 7
Critical Rate of Rise of Off-State
Commutating Voltage (V/µs)
Breakover Voltage (dv/dt = xV/µs)
× 100 (%)
Breakover Voltage (dv/dt = 1V/µs)
Breakover Voltage (Tj = t°C)
× 100 (%)
Breakover Voltage (Tj = 25°C)
Holding Current (Tj = t°C)
× 100 (%)
Holding Current (Tj = 25°C)
Holding Current vs.
Junction Temperature
102
7
5
3
2
Time
Main Voltage
Typical Example
(dv/dt)c
VD Tj = 125°C
Main Current
(di/dt)c IT = 4A
IT
τ = 500µs
τ
Time
VD = 200V
f = 3Hz
101
7 Minimum
5 Characteristics
Value
I Quadrant
3
2
100
7
III Quadrant
3
5 7 101
2 3
5 7 102
2 3
Rate of Decay of On-State
Commutating Current (A/ms)
BCR16LM-12LB
Preliminary
Gate Trigger Current vs.
Gate Current Pulse Width
102
7 Typical Example Main Voltage
(dv/dt)c
5 Tj = 150°C
Main Current
IT = 4A
IT
3 τ = 500µs
τ
2 VD = 200V
f = 3Hz
101
7
I Quadrant
5
Gate Trigger Current (tw)
× 100 (%)
Gate Trigger Current (DC)
Critical Rate of Rise of Off-State
Commutating Voltage (V/µs)
Commutation Characteristics (Tj=150°C)
Time
VD
(di/dt)c
Time
III Quadrant
3
2
100
7
Minimum
Characteristics
Value
3
5 7 101
2 3
5 7 102
2 3
Rate of Decay of On-State
Commutating Current (A/ms)
Typical Example
IFGT I
IRGT I
IRGT III
102
7
5
4
3
2
101 0
10
2 3 4 5 7 101
2 3 4 5 7 102
Gate Current Pulse Width (µs)
Gate Trigger Characteristics Test Circuits
6Ω
103
7
5
4
3
2
6Ω
Recommended Circuit Values Around The Triac
Load
C1
A
6V
V
V
6Ω
A
V
330Ω
Test Procedure II
Test Procedure I
6V
R1
A
6V
330Ω
330Ω
Test Procedure III
REJ03G1805-0100 Rev.1.00 Jul 22, 2009
Page 6 of 7
C0
R0
C1 = 0.1 to 0.47µF C0 = 0.1µF
R0 = 100Ω
R1 = 47 to 100Ω
BCR16LM-12LB
Preliminary
Package Dimensions
Package Name
TO-220FL
JEITA Package Code

Previous Code
TO-220FL
RENESAS Code
PRSS0003AF-A
Unit: mm
6.5 ± 0.3
3.0 ± 0.3
2.8 ± 0.2
φ 3.2 ± 0.2
3.6 ± 0.3
12.5 ± 0.5
15.0 ± 0.3
10.0 ± 0.3
MASS[Typ.]
1.5g
1.15 ± 0.2
1.15 ± 0.2
0.75 ± 0.15
0.40 ± 0.15
4.5 ± 0.2
2.54 ± 0.25
2.6 ± 0.2
2.54 ± 0.25
Order Code
Lead form
Straight type
Lead form
Standard packing
Plastic Magazine (Tube)
Plastic Magazine (Tube)
Quantity
50
50
Standard order code
Type name
Type name – Lead forming code
Note : Please confirm the specification about the shipping in detail.
REJ03G1805-0100 Rev.1.00 Jul 22, 2009
Page 7 of 7
Standard order
code example
BCR16LM-12LB
BCR16LM-12LB-A8
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Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this
document or Renesas Electronics products, or if you have any other inquiries.
(Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majorityowned subsidiaries.
(Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics.
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