datasheet for VL493T1K66B

datasheet for VL493T1K66B
Product Specifications
PART NO:
VL493T1K66B-E6M/D5M/CCM
REV: 1.1
General Information
8GB 1Gx72 DDR2 SDRAM ECC SO-RDIMM 200-PIN WITH THERMAL SENSOR
Description
The VL493T1K66B is a 1Gx72 Double Data Rate DDR2 SDRAM high density SO-RDIMM. This memory module is four
rank, consists of eighteen DDP CMOS 512Mx8 bit with 8 banks DDR2 Synchronous DRAMs in BGA packages, two 28-bit
Registered buffers in BGA package, a zero delay PLL clock in BGA package, and two 2K EEPROMs with thermal sensor
in an 8-pin MLF package. This module is a 200-pin small-outline dual in-line memory module and is intended for mouting
into an edge connector socket. Decoupling capacitors are mounted on the printed circuit board for each DDR2 SDRAM.
Features
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Pin Description
200-pin, registered small-outline dual in-line memory module (SO-RDIMM)
JEDEC pin out
Supports ECC error detection and correction
Fast data transfer rates: PC2-5300, PC2-4200, PC2-3200
VDD = VDDQ = 1.8V
JEDEC standard 1.8V (SSTL_18 compatible)
VDDSPD = 3.0V to 3.6V
Differential data strobe (DQS, DQS# ) option
Differential clock inputs (CK, CK#)
Four-bit pre-fetch architecture
DLL aligns DQ and DQS transition with CK
Nominal and dynamic on-die termination (ODT)
Programmable CAS# latency: 5 (DDR2-667), 4 (DDR2-533), 3 (DDR2-400)
Write latency = Read latency - 1 tCK
Eight internal component banks for concurrent operation
Programmable burst; length (4, 8)
Adjustable data-output drive strength
Auto & self refresh, (8K/64ms refresh)
Serial presence detect (SPD) with EEPROM built-in thermal sensor
Thermal sensor range: -200C to +1250C (+/- 10C accuracy)
Gold edge contacts
Lead-free, RoHS compliant
PCB: Height 34.29mm (1.350”), double sided component
Order Information
VL493T1K66B-E6 M X
DRAM DIE (option)
DRAM MANUFACTURER
M - MICRON
MODULE SPEED
E6 : PC2-5300 @ CL5
D5 : PC2-4200 @ CL4
CC: PC2-3200 @ CL3
Pin Name
Function
A0~A14
Address Inputs
BA0~BA2
Bank Address Inputs
DQ0~DQ63
Data Input/Output
CB0~CB7
Check Bits
DQS0~DQS8
Data Strobes
DQS0#~DQS8#
Data Strobes Complement
ODT0,ODT1
On-di e Termination Control
CK,CK#
Clock Input
CKE0,CKE1
Clock Enables
CS0#~CS3#
Chi p Selects
RAS#
Row Address Strobes
C AS#
Column Address Strobes
WE#
Wri te Enable
RESET#
Regi ster Reset Input
DM0~DM8
Data Masks
VD D
Voltage Supply 1.8V +/- 0.1V
A10/AP
Address Input/Auto Precharge
VD D SPD
SPD Voltage Supply
3.0V to 3.6V
VSS
Ground
SA1
SPD Address
SD A
SPD Data Input/Output
SC L
SPD Clock Input
VREF
SSTL_18 Reference Voltage
NC
No Connect
VL : Lead-free/RoHS
Virtium Technology, Inc. 30052 Tomas, Rancho Santa Margarita, CA 92688
Tel: 949-888-2444 Fax: 949-888-2445
PAGE 1 OF 10
Product Specifications
PART NO:
VL493T1K66B-E6M/D5M/CCM
REV: 1.1
Pin Configuration
200-PIN DDR2 SO-RDIMM FRONT
200-PIN DDR2 SO-RDIMM BACK
Pin
Name
Pin
Name
Pin
Name
Pin
Name
Pin
Name
Pin
Name
Pin
Name
Pin
Name
1
VREF
51
DQ18
101
VD D
151
VSS
2
VSS
52
VSS
102
A6
152
VSS
3
DQ0
53
DQ19
103
A5
153
DQS5#
4
DQ4
54
DQ28
104
A4
154
DM5
5
VSS
55
VSS
105
A3
155
DQS5
6
DQ5
56
DQ29
106
VD D
156
VSS
7
DQ1
57
DQ24
107
A2
157
VSS
8
VSS
58
VSS
108
A1
158
DQ46
9
DQS0#
59
DQ25
109
VD D
159
DQ42
10
DM0
60
DM3
110
A0
160
DQ47
11
DQS0
61
VSS
111
A10/AP
161
DQ43
12
VSS
62
VSS
112
BA1
162
VSS
13
VSS
63
DQS3#
113
BA0
163
VSS
14
DQ6
64
DQ30
114
VD D
164
DQ52
15
DQ2
65
DQS3
115
RAS#
165
DQ48
16
DQ7
66
DQ31
116
WE#
166
DQ53
17
DQ3
67
VSS
117
VD D
167
DQ49
18
VSS
68
VSS
118
C S 0#
168
VSS
19
VSS
69
DQ26
119
C AS#
169
VSS
20
DQ12
70
C B4
120
ODT0
170
DM6
21
DQ8
71
DQ27
121
C S 1#
171
DQS6#
22
DQ13
72
C B5
122
A 13
172
VSS
23
DQ9
73
VSS
123
VD D
173
DQS6
24
VSS
74
VSS
124
VD D
174
DQ54
25
VSS
75
C B0
125
ODT1
175
VSS
26
DM1
76
DM8
126
CK
176
DQ55
27
DQS1#
77
C B1
127
C S 3#
177
DQ50
28
VSS
78
VSS
128
C K#
178
VSS
29
DQS1
79
VSS
129
DQ32
179
DQ51
30
DQ14
80
C B6
130
VSS
180
DQ60
31
VSS
81
DQS8#
131
VSS
181
VSS
32
DQ15
82
C B7
132
DQ36
182
DQ61
33
DQ10
83
DQS8
133
DQ33
183
DQ56
34
VSS
84
VSS
134
DQ37
184
VSS
35
DQ11
85
VSS
135
DQS4#
185
DQ57
36
DQ20
86
C B2
136
VSS
186
DM7
37
VSS
87
C KE0
137
DQS4
187
VSS
38
DQ21
88
C B3
138
DM4
188
DQ62
39
DQ16
89
C KE1
139
VSS
189
DQS7#
40
VSS
90
VSS
140
VSS
190
VSS
41
DQ17
91
C S 2#
141
DQ34
191
DQS7
42
RESET#
92
BA2
142
DQ38
192
DQ63
43
VSS
93
VD D
143
DQ35
193
DQ58
44
DM2
94
A 14
144
DQ39
194
SD A
45
DQS2#
95
A 12
145
VSS
195
VSS
46
VSS
96
A11
146
VSS
196
SC L
47
DQS2
97
A9
147
DQ40
197
DQ59
48
DQ22
98
VD D
148
DQ44
198
SA1
49
VSS
99
A7
149
DQ41
199
VD D SPD
50
DQ23
100
A8
150
DQ45
200
S A 0*
Note:
*: These pins are not used in this module.
RESET (pin 42) RESET is connected to both OE of the PLL and Reset of the register.
Virtium Technology, Inc. 30052 Tomas, Rancho Santa Margarita, CA 92688
Tel: 949-888-2444 Fax: 949-888-2445
PAGE 2 OF 10
Product Specifications
PART NO:
VL493T1K66B-E6M/D5M/CCM
REV: 1.1
Functional Block Diagram
RCS3#
RCS2#
RCS1#
RCS0#
DQS0
DQS0#
DM0
DQS4
DQS4#
DM4
DM/
RDQS
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
CS0# DQS DQS# CS1#
D0
DM/
RDQS
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
CS0# DQS DQS# CS1#
DQ32
DQ33
DQ34
DQ35
DQ36
DQ37
DQ38
DQ39
D9
DQS1
DQS1#
DM1
DM/ NU/ CS0# DQS DQS# CS1#
RDQS RDQS#
DM/ NU/ CS0# DQS DQS# CS1#
RDQS RDQS#
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
D4
D13
DQS5
DQS5#
DM5
DM/
RDQS
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
CS0# DQS DQS# CS1#
D1
DM/
RDQS
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
DM/
RDQS
CS0# DQS DQS# CS1#
DQ40
DQ41
DQ42
DQ43
DQ44
DQ45
DQ46
DQ47
D10
DQS2
DQS2#
DM2
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
CS0# DQS DQS# CS1#
DM/
RDQS
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
D5
CS0# DQS DQS# CS1#
D14
DQS6
DQS6#
DM6
DM/
RDQS
DQ16
DQ17
DQ18
DQ19
DQ20
DQ21
DQ22
DQ23
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
CS0# DQS DQS# CS1#
D2
DM/
RDQS
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
DM/
RDQS
CS0# DQS DQS# CS1#
DQ48
DQ49
DQ50
DQ51
DQ52
DQ53
DQ54
DQ55
D2
D11
DQS3
DQS3#
DM3
CS0# DQS DQS# CS1#
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
DM/
RDQS
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
D6
CS0# DQS DQS# CS1#
D15
DQS7
DQS7#
DM7
DM/
RDQS
DQ24
DQ25
DQ26
DQ27
DQ28
DQ29
DQ30
DQ31
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
CS0# DQS DQS# CS1#
D3
DM/
RDQS
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
DM/
RDQS
CS0# DQS DQS# CS1#
DQ56
DQ57
DQ58
DQ59
DQ60
DQ61
DQ62
DQ63
D12
CS0# DQS DQS# CS1#
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
DM/
RDQS
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
D7
CS0# DQS DQS# CS1#
D16
DQS8
DQS8#
DM8
Serial PD with Thermal sensor
DM/
RDQS
CB0
CB1
CB2
CB3
CB4
CB5
CB6
CB7
CS0#
CS1#
CS2#
CS3#
BA0-BA2
A0-A14
RAS#
CAS#
WE#
CKE0
CKE1
ODT0
ODT1
1:2
R
E
G
I
S
T
E
R
RESET#**
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
CS0# DQS DQS# CS1#
D8
DM/
RDQS
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
CS0# DQS DQS# CS1#
SCL
D17
RCS0# -> CS# : DDR2 SDRAMs D0 - D8
RCS1# -> CS# : DDR2 SDRAMs D0 - D8
RCS2# -> CS# : DDR2 SDRAMs D9 - D17
RCS3# -> CS# : DDR2 SDRAMs D9 - D17
RBA0-RBA2 -> BA0-BA2 : DDR2 SDRAMs D0 - D17
RA0-RA14 -> A0-A14 : DDR2 SDRAMs D0 - D17
RRAS# -> RAS:# DDR2 SDRAMs D0 - D17
RCAS# -> CAS:# DDR2 SDRAMs D0 - D17
RWE# -> WE# : DDR2 SDRAMs D0 - D17
RCKE0 -> CKE : DDR2 SDRAMs D0 - D8
RCKE1 -> CKE : DDR2 SDRAMs D9 - D17
RODT0 -> ODT : DDR2 SDRAMs D0 - D8
RODT1 -> ODT : DDR2 SDRAMs D9 - D17
VDDSPD
Serial PD
VDD/VDDQ
D0 - D17
VREF
D0 - D17
VSS
D0 - D17
MCP98242
WP A0
A1
SDA
A2
SA1
VDDSPD
Serial PD with Thermal sensor
SCL
MCP98242
WP A0
A1
SDA
A2
SA1
CK
CK#
RESET#
PCK0-PCK6, PCK8, PCK9 -> CK : DDR2 SDRAMs D0 - D17
P
L
L
OE
PCK0# -> PCK6#, PCK8#, PCK9# -> CK#: DDR2 SDRAMs D0 - D17
PCK7 -> CK : Register
PCK7# >- CK# : Register
RST#
PCK7**
PCK7#**
Notes :
** RESET#, PCK7 and PCK7# connect to both Registers. Other signals connect to one of two Registers.
1. Unless otherwise noted, resister values are 22 Ohms
Virtium Technology, Inc. 30052 Tomas, Rancho Santa Margarita, CA 92688
Tel: 949-888-2444 Fax: 949-888-2445
PAGE 3 OF 10
Product Specifications
PART NO:
VL493T1K66B-E6M/D5M/CCM
REV: 1.1
Absolute Maximum Ratings
Symbol
Parameter
MIN
MAX
Unit
VDD
Voltage on VDD pin relative to VSS
-1.0
2.3
V
VDDQ
Voltage on VDDQ pin relative to VSS
-0.5
2.3
V
VDDL
Voltage on VDDL pin relative to VSS
-0.5
2.3
V
Voltage on any pin relative to VSS
-0.5
2.3
V
Storage temperature
-55
150
Command/Address,
RAS#, CAS#, WE#,
CKE, ODT, BA
-5
5
uA
C S#
-5
5
uA
-250
+250
uA
DM
-20
20
uA
DQ, DQS, DQS#
-20
20
uA
-72
72
uA
VIN, VOUT
TSTG
Input leakage current; Any input
0V<VIN<VDD; VREF input
0V<VIN<0.95V; Other pins not under
test = 0V
IL
Output leakage current;
0V<VOUT<VDDQ; DQs and ODT
are disabled
IOZ
C K, C K#
VREF leakage current; VREF = Valid VREF level
IVREF
0
C
DC Operating Conditions
All voltages referenced to VSS
Parameter
Symbol
Min
Typical
Max
Unit
Notes
VD D
1.7
1.8
1.9
V
1
I/O Supply voltage
VD D Q
1.7
1.8
1.9
V
4
VDDL Supply voltage
VD D L
1.7
1.8
1.9
V
4
I/O Reference voltage
VREF
0.49 x VDDQ
0.50 x VDDQ
0.51 x VDDQ
V
2
I/O Termination voltage
VTT
VREF-0.04
VREF
VREF+0.04
V
3
Supply voltage
Notes: 1. VDD, VDDQ must track each other. VDDQ must be less than or equal to VDD.
2. VREF is expected to equal VDDQ/2 of the transmitting device and to track variations in the DC level of the same. Peak-topeak noise on VREF may not exceed +/-1percent of the DC value. Peak-to-peak AC noise on VREF may not exceed +/-2
percent of VREF. This measurement is to be taken at the nearest VREF bypass capacitor.
3. VTT is not applied directly to the device. VTT is a system supply for signal termination resistors, is expected to be set equal
to VREF and must track variations in the DC level of VREF.
4. VDDQ tracks with VDD; VDDL tracks with VDD.
Virtium Technology, Inc. 30052 Tomas, Rancho Santa Margarita, CA 92688
Tel: 949-888-2444 Fax: 949-888-2445
PAGE 4 OF 10
Product Specifications
PART NO:
VL493T1K66B-E6M/D5M/CCM
REV: 1.1
Operating Temperature Condition
Parameter
Operating temperature
Symbol
Rating
TOPER
0 to 85
Units
0
C
Notes
1,2
Notes:
1. Operating temperature is the case surface temperature on the center/top side of the DRAM. For the measurement conditions,
please refer to JEDEC JESD51.2
2. At 0 - 850C, operation temperature range, all DRAM specifications will be supported.
Input DC Logic Level
All voltages referenced to VSS
Parameter
Symbol
Min
Max
Unit
Input High (Logic 1) Voltage
VIH(DC)
VREF + 0.125
VDDQ + 0.300
V
Input Low (Logic 0) Voltage
VIL(DC)
-0.300
VREF - 0.125
V
Input AC Logic Level
All voltages referenced to VSS
Parameter
Symbol
Min
Max
Unit
AC Input High (Logic 1) Voltage DDR2-533 & DDR2-400
VIH(AC)
VREF + 0.250
-
V
AC Input High (Logic 1) Voltage DDR2-667
VIH(AC)
VREF + 0.200
-
V
AC Input Low (Logic 0) Voltage DDR2-533 & DDR2-400
VIL(AC)
-
VREF - 0.250
V
AC Input Low (Logic 0) Voltage DDR2-667
VIL(AC)
-
VREF - 0.200
V
Input/Output Capacitance
TA=250C, f=100MHz
Parameter
Symbol
Min
Max
Unit
Input capacitance (A0 ~ A14, BA0 ~ BA2, RAS#, CAS#, WE#)
CIN1
6.5
7.5
pF
Input capacitance (CKE0, CKE1), (ODT0, ODT1)
CIN2
6.5
7.5
pF
Input capacitance (CS0# ~ CS3#)
CIN3
6.5
7.5
pF
Input capacitance (CK, CK#)
CIN4
6
7
pF
Input/Output capacitance (DQ, DQS, DQS#, DM, CB)
CIN5
14
20
pF
Virtium Technology, Inc. 30052 Tomas, Rancho Santa Margarita, CA 92688
Tel: 949-888-2444 Fax: 949-888-2445
PAGE 5 OF 10
Product Specifications
PART NO:
VL493T1K66B-E6M/D5M/CCM
REV: 1.1
IDD Specification
Condition
Symbol
E6
D5
CC
(DDR2-667) (DDR2-533) (DDR2-400)
Unit
Operating one bank active-precharge;
tCK= tCK(IDD); tRC= tRC(IDD); tRAS= tRAS MIN(IDD); CKE is HIGH, CS# is HIGH between valid
commands; Address bus inputs are SWITCHING; Data bus inputs are SWITCHING
IDD0*
1497
1407
1407
mA
Operating one bank active-read-precharge;
IOUT = 0mA; BL = 4; CL = CL(IDD);tCK= tCK(IDD); tRC= tRC(IDD); tRAS= tRAS MIN(IDD); CKE is HIGH,
CS# is HIGH between valid commands; Address bus inputs are SWITCHING; Data bus
inputs are SWITCHING; Data pattern is same as IDD4W.
IDD1*
1902
1542
1542
mA
Precharge pow er-dow n current;
All banks idle; tCK= tCK(IDD); CKE is LOW; Other control and address bus inputs are STABLE;
Data bus inputs are FLOATING
IDD2P**
660
660
660
mA
Precharge quiet standby current;
All banks idle; tCK= tCK(IDD); CKE is HIGH; CS# is HIGH; Other control and address bus inputs
are STABLE; Data bus inputs are FLOATING
IDD2Q**
1434
1254
1200
mA
Precharge standby current;
All banks idle; tCK= tCK(IDD); CKE is HIGH; CS# is HIGH; Other control and address bus inputs
are STABLE; Data bus inputs are SWITCHING.
IDD2N**
1614
1434
1344
mA
Active pow er-dow n current;
All banks open; tCK= tCK(IDD); CKE is LOW; Other control
and address bus inputs are STABLE; Data bus inputs
are FLOATING.
1164
1074
1074
mA
IDD3P**
732
732
732
mA
Fast PDN Exit MRS(12) = 0
Slow PDN Exit MRS(12) = 1
Active standby current;
All banks open;tCK= tCK(IDD); tRC= tRC(IDD); tRAS= tRAS MIN(IDD));CKE is HIGH, CS# is HIGH between
valid commands; Other control and address bus inputs are SWITCHING; Data bus inputs are
SWITCHING.
IDD3N**
1524
1344
1254
mA
Operating burst w rite current;
All banks open; Continuous burst writes; BL = 4; CL = CL(IDD); AL = 0; tCK= tCK(IDD);
tRAS= tRAS MAX(IDD); tRP= tRP(IDD); CKE is HIGH, CS# is HIGH between valid commands; Address
bus inputs are SWITCHING; Data bus inputs are SWITCHING.
IDD4W*
2037
1767
1722
mA
Operating burst read current;
All banks open; Continuous burst reads; IOUT = 0mA; BL = 4; CL = CL(IDD); AL = 0;
tCK= tCK(IDD); tRAS= tRAS MAX(IDD); tRP= tRP(IDD); CKE is HIGH, CS# is HIGH between valid
commands; Address bus inputs are SWITCHING; Data pattern is same as IDD4W.
IDD4R*
2127
1947
1857
mA
Burst auto refresh current;
tCK=tCK(IDD); Refresh command at every tRFC(IDD) interval; CKE is HIGH; CS# is HIGH between
valid commands; Other control and address bus inputs are SWITCHING; Data bus inputs
are SWITCHING.
IDD5**
5574
5214
5034
mA
Self refresh current;
CK and CK# at 0V; CKE < 0.2V; Other control and
address bus inputs are FLOATING; Data bus inputs are
FLOATING.
IDD6**
360
360
360
mA
IDD7*
3657
3252
3252
mA
Normal
Operating bank interleave read current;
All bank interleaving reads; IOUT = 0mA; BL = 4; CL = CL(IDD); AL = tRCD(IDD) - 1*tCK(IDD);
tCK= tCK(IDD); tRC= tRC(IDD); tRRD = tRRD(IDD); tRCD = 1*tCK(IDD) ; CKE is HIGH; CS# is HIGH between
valid commands; Address bus inputs are STABLE during DESELECTs; Data bus inputs are
SWITCHING.
Notes: IDD specification is based on Micron A-die components.
*: Value calculated as one module rank in this operating condition, and all other module ranks in IDD2P (CKE LOW) mode.
**: Value calculated reflects all module ranks in this operating condition.
Virtium Technology, Inc. 30052 Tomas, Rancho Santa Margarita, CA 92688
Tel: 949-888-2444 Fax: 949-888-2445
PAGE 6 OF 10
Product Specifications
PART NO:
VL493T1K66B-E6M/D5M/CCM
REV: 1.1
AC Timing Parameters & Specifications
Parameter
Clock
Data
D5
CC
(DDR2-533)
(DDR2-400)
Unit
Min
Max
Min
Max
Min
Max
CL=5
tCK (5)
3000
8000
-
-
-
-
ps
CL=4
tCK (4)
-
-
3,750
8,000
-
-
ps
CL=3
tCK (3)
-
-
-
-
5,000
8,000
ps
CK high-level width
tCH(AVG)
0.48
0.52
0.48
0.52
0.48
0.52
tCK
CK low-level width
tCL(AVG)
0.48
0.52
0.48
0.52
0.48
0.52
tCK
Half clock period
tHP
MIN
(tCH,tCL)
Clock jitter
tJIT
-125
125
-125
125
-125
125
ps
DQ output access time from CK/CK#
tAC
-450
+450
-500
+500
-600
+600
ps
Data-out high impedance window from CK/CK#
tHZ
tAC (MAX)
ps
Data-out low-impedance window from CK/CK#
tLZ
tAC (MIN)
tAC (MAX)
ps
DQ and DM input setup time relative to DQS
tDS
100
100
150
ps
DQ and DM input hold time relative to DQS
tDH
175
225
275
ps
DQ and DM input pulse width (for each input)
tDIPW
0.35
0.35
0.35
tCK
Data hold skew factor
tQHS
DQ–DQS hold, DQS to first DQ to go nonvalid,
p e r a cce ss
tQH
tHP - tQHS
tHP - tQHS
tHP - tQHS
ps
Data valid output window (DVW)
tDVW
tQH - tDQSQ
tQH - tDQSQ
tQH - tDQSQ
ns
DQS input high pulse width
tDQSH
0.35
0.35
0.35
tCK
DQS input low pulse width
tDQSL
0.35
0.35
0.35
tCK
DQS output access time fromCK/CK#
tDQSCK
-400
DQS falling edge to CK rising – setup time
tDSS
0.2
0.2
0.2
tCK
DQS falling edge from CK rising – hold time
tDSH
0.2
0.2
0.2
tCK
DQS–DQ skew, DQS to last DQ valid, per group,
p e r a cce ss
tDQSQ
DQS read preamble
tRPRE
0.9
1.1
0.9
1.1
DQS read postamble
tRPST
0.4
0.6
0.4
0.6
DQS write preamble setup time
tWPRES
0
0
0
ps
DQS write preamble
tWPRE
0.35
0.35
0.35
tCK
DQS write postamble
tWPST
0.4
0.6
0.4
0.6
0.4
0.6
tCK
Write command to first DQS latching transition
tDQSS
WL-0.25
WL+0.25
WL-0.25
WL+0.25
WL-0.25
WL+0.25
tCK
Clock cycle time
Data Strobe
Symbol
E6
(DDR2-667)
MIN
(tCH,tCL)
tAC (MAX)
tAC (MAX)
tAC (MAX)
tAC (MIN)
340
+400
MIN
(tCH,tCL)
tAC (MAX)
tAC (MIN)
400
-450
240
+450
450
-500
300
+500
ps
ps
350
ps
0.9
1.1
tCK
0.4
0.6
tCK
Virtium Technology, Inc. 30052 Tomas, Rancho Santa Margarita, CA 92688
Tel: 949-888-2444 Fax: 949-888-2445
PAGE 7 OF 10
ps
Product Specifications
PART NO:
VL493T1K66B-E6M/D5M/CCM
REV: 1.1
AC Timing Parameters & Specifications ( cont')
Parameter
Symbol
E6
D5
CC
(DDR2-667)
(DDR2-533)
(DDR2-400)
Power-Down
ODT
Self Refresh
Command and Address
Min
Max
Min
Max
Min
Unit
Max
Address and control input pulse width for each
input
tIPW
0.6
0.6
0.6
tCK
Address and control input setup time
tIS
200
250
350
ps
Address and control input hold time
tIH
275
375
475
ps
CAS# to CAS# command delay
tCCD
2
2
2
tCK
ACTIVE to ACTIVE (same bank) command
tRC
60
60
55
ns
ACTIVE bank a to ACTIVE bank b command
tRRD
7.5
7.5
7.5
ns
ACTIVE to READ or WRITE delay
tRCD
15
15
15
ns
Four Bank Activate period
tFAW
37.5
37.5
37.5
ns
ACTIVE to PRECHARGE command
tRAS
45
Internal READ to precharge command delay
tRTP
7.5
7.5
7.5
ns
Write recovery time
tWR
15
15
15
ns
Auto precharge write recovery + precharge time
tDAL
tWR+tRP
tWR+tRP
tWR+tRP
tCK
Internal WRITE to READ command delay
tWTR
7.5
7.5
10
ns
PRECHARGE command period
tRP
15
15
15
ns
70,000
45
70,000
40
70,000
ns
LOAD MODE command cycle time
tMRD
2
2
2
tCK
CKE low to CK,CK# uncertainty
tDELAY
tIS+tCK+tIH
tIS+tCK+tIH
tIS+tCK+tIH
ns
REFRESH to Active or Refresh to Refresh
command interval
tRFC
197.5
Average periodic refresh interval
tREFI
Exit self refresh to non-READ command
tXSNR
tRFC(MIN)+10
tRFC(MIN)+10
tRFC(MIN)+10
ns
Exit self refresh to READ
tXSRD
200
200
200
tCK
Exit self refresh timing reference
tISXR
tIS
tIS
tIS
ps
ODT turn-on delay
tAOND
2
2
2
2
2
2
tCK
ODT turn-on
tAON
tAC(MIN)
tAC(MAX)+
700
tAC(MIN)
tAC(MAX)+
1000
tAC(MIN)
tAC(MAX)+
1000
ps
ODT turn-off delay
tAOFD
2.5
2.5
2.5
2.5
2.5
2.5
tCK
ODT turn-off
tAOF
tAC(MIN)
tAC(MAX)+
600
tAC(MIN)
tAC(MAX)+
600
tAC(MIN)
tAC(MAX)+
600
ps
tAONPD
tAC(MIN)+
2000
2 x tCK +
tAC(MAX)+
1000
tAC(MIN)+
2000
2 x tCK +
tAC(MAX)+
1000
tAC(MIN)+
2000
2 x tCK +
tAC(MAX)+
1000
ps
ODT turn-off (power-down mode)
tAOFPD
tAC(MIN)+
2000
2.5 x tCK +
tAC(MAX)+
1000
tAC(MIN)+
2000
2.5 x tCK +
tAC(MAX)+
1000
tAC(MIN)+
2000
2.5 x tCK +
tAC(MAX)+
1000
ps
ODT to power-down entry latency
tANPD
3
3
3
tCK
ODT power-down exit latency
tAXPD
8
8
8
tCK
Exit active power-down to READ command,
MR[bit12=0]
tXARD
2
2
2
tCK
Exit active power-down to READ command,
MR[bit12=1]
tXARDS
7-AL
6-AL
6-AL
tCK
Exit precharge power-down to any non-READ
command.
tXP
2
2
2
tCK
CKE minimum high/low time
tCKE
3
3
3
tCK
ODT turn-on (power-down mode)
70,000
197.5
7.8
70,000
197.5
7.8
Virtium Technology, Inc. 30052 Tomas, Rancho Santa Margarita, CA 92688
Tel: 949-888-2444 Fax: 949-888-2445
PAGE 8 OF 10
70,000
ns
7.8
us
Product Specifications
PART NO:
VL493T1K66B-E6M/D5M/CCM
REV: 1.1
Package Dimensions
FRONT VIEW
3.72 MAX
67.60
4.00 +/- 0.10 (2X)
34.29
1.80 (2X)
TYP
20.00 TYP
6.00 TYP
2.55 TYP
1.00 +/- 0.10
2.15 TYP
0.45 TYP
1.00 TYP
PIN 1
0.60 TYP
PIN 199
63.60 TYP
BACK VIEW
4.00 +/- 0.10
4.2 TYP
PIN 200
47.40 TYP
PIN 2
11.40 TYP
15.35 TYP
NOTE:
All dimesions are in millimeters with tolerance +/- 0.15mm unless otherwise specified.
Virtium Technology, Inc. 30052 Tomas, Rancho Santa Margarita, CA 92688
Tel: 949-888-2444 Fax: 949-888-2445
PAGE 9 OF 10
Product Specifications
PART NO:
VL493T1K66B-E6M/D5M/CCM
Revision History
Date
Rev.
P ag e
C h an g es
04/08/09
0.01
All
Preliminary spec
09/15/09
0.02
9
Dimension Package update
10/02/09
0.03
1, 3
12/02/09
1.0
1, 3, 9
Update to use 2 EEPROMs
Spec release
12/20/10
1.1
1
Update General Information
EEPROM update with thermal sensor
Virtium Technology, Inc. 30052 Tomas, Rancho Santa Margarita, CA 92688
Tel: 949-888-2444 Fax: 949-888-2445
PAGE 10 OF 10
REV: 1.1
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