datasheet for H7N0203AB by Renesas Electronics Corporation

datasheet for H7N0203AB by Renesas Electronics Corporation
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H7N0203AB
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1119-0500
(Previous: ADE-208-1490C)
Rev.5.00
Sep 07, 2005
Features
• Low on-resistance
RDS (on) =2.4 mΩ typ.
• Low drive current
• 4.5 V gate drive device can be driven from 5 V source
Outline
RENESAS Package code: PRSS0004AC-A
(Package name: TO-220AB)
D
1. Gate
2. Drain (Flange)
3. Source
G
1
Rev.5.00 Sep 07, 2005 page 1 of 7
2
3
S
H7N0203AB
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Symbol
VDSS
Value
20
Unit
V
VGSS
ID
±20
90
V
A
360
90
A
A
20
40
A
mJ
100
1.25
W
°C/W
150
–55 to +150
°C
°C
ID (pulse)
IDR
Note 1
Note 2
Avalanche current
Avalanche energy
IAP
Note 2
EAR
Channel dissipation
Channel to case thermal impedance
Pch
θ ch-c
Note 3
Channel temperature
Storage temperature
Tch
Tstg
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tch = 25°C, Rg ≥ 50 Ω
3. Value at Tc = 25°C
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Symbol
V (BR) DSS
Min
20
Typ
—
Max
—
Unit
V
Test Conditions
ID = 10 mA, VGS = 0
Gate to source breakdown voltage
Gate to source leak current
V (BR) GSS
IGSS
±20
—
—
—
—
±10
V
µA
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
Zero gate voltage drain current
Gate to source cutoff voltage
IDSS
VGS (off)
—
1.0
—
—
10
2.5
µA
V
VDS = 20 V, VGS = 0
Note 4
ID = 1 mA, VDS = 10 V
Static drain to source on state resistance
RDS (on)
—
—
2.4
3.5
3.0
5.1
mΩ
mΩ
ID = 45 A, VGS = 10 V
Note 4
ID = 45 A, VGS = 4.5 V
Forward transfer admittance
Input capacitance
|yfs|
Ciss
80
—
140
6800
—
—
S
pF
Output capacitance
Reverse transfer capacitance
Coss
Crss
—
—
1850
750
—
—
pF
pF
ID = 45 A, VDS = 10 V
VDS = 10 V
VGS = 0
f = 1 MHz
Total gate charge
Gate to source charge
Qg
Qgs
—
—
110
22
—
—
nC
nC
Gate to drain charge
Turn-on delay time
Qgd
td (on)
—
—
20
32
—
—
nC
ns
tr
380
110
—
—
ns
ns
VGS = 10 V, ID = 45 A
RL = 0.22 Ω
Rg = 4.7 Ω
IF = 90 A, VGS = 0
Rise time
Turn-off delay time
td (off)
—
—
Fall time
Body-drain diode forward voltage
tf
VDF
—
—
35
0.90
—
—
ns
V
trr
—
60
—
ns
Body-drain diode reverse recovery time
Note:
4. Pulse test
Rev.5.00 Sep 07, 2005 page 2 of 7
Note 4
VDD = 10 V
VGS = 10 V
ID = 90 A
IF = 90 A, VGS = 0
diF/dt = 50 A/µs
Note 4
H7N0203AB
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
1000
10 µs
(A)
300
ID
120
Drain Current
Channel Dissipation
Pch (W)
160
80
40
10
1 m 0 µs
s
100
30
DC Operation
(Tc = 25°C)
10
3
PW = 10 ms
1 Operation in (1 shot)
this area is
0.3 limited by RDS (on)
0.1
0.03
0
0
50
100
200
150
Case Temperature
Ta = 25°C
0.01
0.1
Tc (°C)
80
VDS (V)
Drain Current
60
2.8 V
40
20
40
–25°C
Tc = 75°C
20
25°C
0
0
0
2
4
6
Drain to Source Voltage
8
10
0
VDS (V)
Pulse Test
0.3
0.2
ID = 50 A
0.1
20 A
10 A
0
4
8
12
Gate to Source Voltage
Rev.5.00 Sep 07, 2005 page 3 of 7
16
20
VGS (V)
2
3
4
5
VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source On State Resistance
RDS (on) (mΩ)
0.4
1
Gate to Source Voltage
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
VDS (on) (mV)
100
80
VGS = 2.4 V
Drain to Source Voltage
30
VDS = 10 V
Pulse Test
3.0 V
0
10
100
Pulse Test
60
Drain Current
3
Typical Transfer Characteristics
ID (A)
ID (A)
10 V
5V
3.5 V
1
Drain to Source Voltage
Typical Output Characteristics
100
0.3
10
Pulse Test
5
VGS = 4.5 V
10 V
2
1
1
10
Drain Current
100
ID (A)
1000
Static Drain to Source on State Resistance
vs. Temperature
8
Pulse Test
50 A
ID = 10, 20 A
VGS = 4.5 V
ID = 10, 20, 50 A
2
VGS = 10 V
0
–25
0
25
50
75
100 125 150
Case Temperature
Tc
Tc = –25°C
100
25°C
10
75°C
1
0.1
0.01
(V)
VDS
Ciss
Drain to Source Voltage
Capacitance C (pF)
20000
5000
Coss
1000
500
Crss
VGS = 0
f = 1 MHz
100
0
4
8
12
16
20
20
ID = 90 A
16
VDD = 5 V
10 V
20 V
30
VDS
20
8
10
0
td(off)
50
tf
td(on)
20
3
Drain Current
Rev.5.00 Sep 07, 2005 page 4 of 7
40
80
120
Gate Charge
10
30
ID (A)
100
Reverse Recovery Time trr (ns)
Switching Time t (ns)
tr
100
1
4
VDD = 20 V
10 V
5V
160
0
200
Qg (nc)
Static Drain to Source on State Resistance
vs. Drain Current
200
0.3
12
100
VGS = 10 V, VDD = 10 V
duty ≤ 1 %
10
0.1
VGS
40
0
Switching Characteristics
500
100
50
Drain to Source Voltage VDS (V)
1000
10
Dynamic Input Characteristics
50000
10000
1
Drain Current ID (A)
100000
200
0.1
(°C)
Typical Capacitance vs.
Drain to Source Voltage
2000
VDS = 10 V
Pulse Test
50
20
di / dt = 50 A / µs
VGS = 0, Ta = 25°C
10
0.1 0.2 0.5 1
2
5
Drain Current
10 20
IDR (A)
50 100
VGS (V)
4
1000
Gate to Source Voltage
6
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance
RDS (on) (mΩ)
H7N0203AB
H7N0203AB
Reverse Drain Current vs.
Source to Drain Voltage
Repetitive Avalanche Energy EAR (mJ)
Maximum Avalanche Energy vs.
Channel Temperature Derating
Reverse Drain Current
IF
(A)
100
80
10 V
VGS = 0, –5 V
60
5V
40
20
Pulse Test
0
0.4
0
0.8
1.2
1.6
Source to Drain Voltage
2.0
50
IAP = 20 A
VDD = 10 V
duty < 0.1 %
Rg ≥ 50 Ω
40
30
20
10
0
25
VSDF (V)
50
75
100
125
150
Channel Temperature Tch (°C)
Normalized Transient Thermal Impedance γ s (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
θch – c (t) = γ s (t) • θch – c
θch – c = 1.25°C/W, Tc = 25°C
0.1
0.05
PDM
2
0.0
1
lse
0
0.
pu
ot
h
1s
0.03
0.01
10 µ
D=
PW
T
PW
T
100 µ
1m
10 m
100 m
10
1
Pulse Width PW (S)
Avalanche Test Circuit
VDS
Monitor
Avalanche Waveform
L
EAR =
1
• L • IAP2 •
2
VDSS
VDSS – VDD
IAP
Monitor
Rg
D.U.T
V(BR)DSS
IAP
VDD
VDS
ID
Vin
15 V
50 Ω
0
Rev.5.00 Sep 07, 2005 page 5 of 7
VDD
H7N0203AB
Switching Time Test Circuit
90%
Vout
Monitor
Vin Monitor
Rg
Switching Time Waveform
D.U.T.
Vin
Vout
Vin
10 V
VDS
= 10 V
10%
10%
90%
td(on)
Rev.5.00 Sep 07, 2005 page 6 of 7
10%
RL
tr
90%
td(off)
tf
H7N0203AB
Package Dimensions
JEITA Package Code
RENESAS Code
Package Name
MASS[Typ.]
SC-46
PRSS0004AC-A
TO-220AB / TO-220ABV
1.8g
Unit: mm
2.79 ± 0.2
11.5 Max
10.16 ± 0.2
4.44 ± 0.2
9.5
+0.1
φ 3.6 –0.08
1.26 ± 0.15
15.0 ± 0.3
18.5 ± 0.5
1.27
6.4
+0.2
–0.1
8.0
7.8 ± 0.5
1.5 Max
0.76 ± 0.1
2.54 ± 0.5
2.54 ± 0.5
14.0 ± 0.5
2.7 Max
0.5 ± 0.1
Ordering Information
Part Name
Quantity
Shipping Container
H7N0203AB-E
500 pcs
Box (Sack)
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.5.00 Sep 07, 2005 page 7 of 7
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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