BCR10KM-12LB DATASHEET

BCR10KM-12LB DATASHEET
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Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
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April 1st, 2010
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BCR10KM-12LB
Triac
Medium Power Use
REJ03G0322-0100
Rev.1.00
Aug.20.2004
Features
•
•
•
•
•
• Insulated Type
• Planar Passivation Type
• Refer to the recommended circuit values around the
triac before using.
IT (RMS) : 10 A
VDRM : 600 V
IFGTI , IRGTI, IRGTⅢ : 30 mA (20 mA)Note5
Viso : 2000 V
The product guaranteed maximum junction
temperature 150°C.
Outline
TO-220FN
2
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
3
1
1
2 3
Applications
Switching mode power supply, washing machine, motor control, heater control, and other general purpose control
applications
Maximum Ratings
Parameter
Repetitive peak off-state voltageNote1
Non-repetitive peak off-state voltageNote1
Rev.1.00, Aug.20.2004, page 1 of 7
Symbol
Voltage class
12
Unit
VDRM
VDSM
600
720
V
V
BCR10KM-12LB
Parameter
RMS on-state current
Symbol
IT (RMS)
Ratings
10
Unit
A
Surge on-state current
ITSM
100
A
I2 t
41.6
A2s
PGM
PG (AV)
VGM
IGM
Tj
Tstg
—
Viso
5
0.5
10
2
– 40 to +150
– 40 to +150
2.0
2000
W
W
V
A
°C
°C
g
V
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Mass
Isolation voltage
Conditions
Commercial frequency, sine full wave
360° conduction, Tc = 111°C
60Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
Ta = 25°C, AC 1 minute,
T1·T2·G terminal to case
Notes: 1. Gate open.
Electrical Characteristics
Parameter
Symbol
Min.
Typ.
Max.
Unit
IDRM
VTM
—
—
—
—
2.0
1.5
mA
V
Tj = 150°C, VDRM applied
Tc = 25°C, ITM = 15 A,
Instantaneous measurement
VFGTΙ
VRGTΙ
VRGTΙΙΙ
IFGTΙ
IRGTΙ
IRGTΙΙΙ
VGD
Rth (j-c)
(dv/dt)c
—
—
—
—
—
—
0.2/0.1
—
10/1
—
—
—
—
—
—
—
—
—
1.5
1.5
1.5
30Note5
30Note5
30Note5
—
3.4
—
V
V
V
mA
mA
mA
V
°C/W
V/µs
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
Repetitive peak off-state current
On-state voltage
Gate trigger voltageNote2
Gate trigger currentNote2
Ι
ΙΙ
ΙΙΙ
Ι
ΙΙ
ΙΙΙ
Test conditions
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
Gate non-trigger voltage
Tj = 125°C/150°C, VD = 1/2 VDRM
Thermal resistance
Junction to caseNote3
Critical-rate of rise of off-state
Tj = 125°C/150°C
commutating voltageNote4
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W.
4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
5. High sensitivity (IGT ≤ 20 mA) is also available. (IGT item: 1)
Test conditions
1. Junction temperature
Tj = 125°C/150°C
2. Rate of decay of on-state commutating current
(di/dt)c = – 5 A/ms
3. Peak off-state voltage
VD = 400 V
Rev.1.00, Aug.20.2004, page 2 of 7
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
(di/dt)c
Time
Main Voltage
(dv/dt)c
Time
VD
BCR10KM-12LB
Performance Curves
100
7
5
90
3
2
Surge On-State Current (A)
102
Tj = 150°C
101
7
5
3
2
Tj = 25°C
100
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Gate Voltage (V)
70
60
50
40
30
20
10
2 3 4 5 7 101
2 3 4 5 7 102
On-State Voltage (V)
Conduction Time (Cycles at 60Hz)
Gate Characteristics (I, II and III)
Gate Trigger Current vs.
Junction Temperature
5
3
2 VGM = 10V
101
PG(AV) =
7
5
0.5W
3 VGT = 1.5V
2
PGM = 5W
IGM = 2A
100
7
5
3
2
IRGT I
IFGT I, IRGT III
10–1
7
VGD = 0.1V
5
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
103
7
5
4
3
2
80
0
100
4.0
Gate Trigger Current (Tj = t°C)
× 100 (%)
Gate Trigger Current (Tj = 25°C)
7
5
Gate Trigger Voltage (Tj = t°C)
× 100 (%)
Gate Trigger Voltage (Tj = 25°C)
Rated Surge On-State Current
103
Typical Example
7
5
3
IRGT I, IRGT III
2
102
7
5
IFGT I
3
2
101
–60 –40 –20 0 20 40 60 80 100 120 140 160
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage vs.
Junction Temperature
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
Typical Example
102
7
5
4
3
2
101
–60 –40 –20 0 20 40 60 80 100 120 140 160
Junction Temperature (°C)
Rev.1.00, Aug.20.2004, page 3 of 7
Transient Thermal Impedance (°C/W)
On-State Current (A)
Maximum On-State Characteristics
102 2 3 5 7 103 2 3 5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
Conduction Time (Cycles at 60Hz)
BCR10KM-12LB
10
7
5
3
2
2
10
7
5
3
2
1
10
7
5
3
2
0
10
7
5
3
2
–1
10 1
On-State Power Dissipation (W)
12 360° Conduction
Resistive,
10 inductive loads
8
6
4
2
0
0
2
4
6
8
10
12
14
16
RMS On-State Current (A)
Allowable Case Temperature vs.
RMS On-State Current
Allowable Ambient Temperature vs.
RMS On-State Current
100
80
60
40
360° Conduction
20 Resistive,
inductive loads
0
0
2
4
6
8
10
12
14
160
Ambient Temperature (°C)
120
16
140
All fins are black painted
aluminum and greased
120
120 × 120 × t2.3
100 × 100 × t2.3
100
60 × 60 × t2.3
80
60 Curves apply
regardless of
40 conduction angle
Resistive,
20 inductive loads
Natural convection
0
0
2
4
6
8
10
12
14
16
RMS On-State Current (A)
RMS On-State Current (A)
Allowable Ambient Temperature vs.
RMS On-State Current
Repetitive Peak Off-State Current vs.
Junction Temperature
160
Natural convection
No Fins
Curves apply regardless
of conduction angle
Resistive, inductive loads
140
120
100
80
60
40
20
0
14
Conduction Time (Cycles at 60Hz)
Curves apply regardless
of conduction angle
140
Case Temperature (°C)
16
No Fins
10 2 3 5 7102 2 3 5 7103 2 3 5 7104 2 3 5 7105
160
Ambient Temperature (°C)
Maximum On-State Power Dissipation
3
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
RMS On-State Current (A)
Rev.1.00, Aug.20.2004, page 4 of 7
Repetitive Peak Off-State Current (Tj = t°C)
× 100 (%)
Repetitive Peak Off-State Current (Tj = 25°C)
Transient Thermal Impedance (°C/W)
Maximum Transient Thermal Impedance
Characteristics (Junction to ambient)
106
7 Typical Example
5
3
2
105
7
5
3
2
104
7
5
3
2
103
7
5
3
2
102
–60 –40 –20 0 20 40 60 80 100 120 140 160
Junction Temperature (°C)
BCR10KM-12LB
Typical Example
Latching Current (mA)
103
7
5
4
3
2
Latching Current vs.
Junction Temperature
102
7
5
4
3
2
101
–60 –40 –20 0 20 40 60 80 100 120 140 160
Distribution
102
T2+, G–
Typical Example
7
5
3
2
101
7
5
3 T2+, G+
2
Typical Example
T2–, G–
100
–40
0
40
80
120
160
Junction Temperature (°C)
Breakover Voltage vs.
Junction Temperature
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=125°C)
Typical Example
140
120
100
80
60
40
20
0
–60 –40 –20 0 20 40 60 80 100 120 140 160
Breakover Voltage (dv/dt = xV/µs)
× 100 (%)
Breakover Voltage (dv/dt = 1V/µs)
160
103
7
5
3
2
Junction Temperature (°C)
160
Typical Example
Tj = 125°C
140
120
100
80
60
III Quadrant
40
20
I Quadrant
0
1
2
10 2 3 5 7 10 2 3 5 7 103 2 3 5 7 104
Junction Temperature (°C)
Rate of Rise of Off-State Voltage (V/µs)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=150°C)
Commutation Characteristics (Tj=125°C)
160
140
Typical Example
Tj = 150°C
120
100
80
60
40
III Quadrant
20
I Quadrant
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
Rate of Rise of Off-State Voltage (V/µs)
Rev.1.00, Aug.20.2004, page 5 of 7
Critical Rate of Rise of Off-State
Commutating Voltage (V/µs)
Breakover Voltage (dv/dt = xV/µs)
× 100 (%)
Breakover Voltage (dv/dt = 1V/µs)
Breakover Voltage (Tj = t°C)
× 100 (%)
Breakover Voltage (Tj = 25°C)
Holding Current (Tj = t°C)
× 100 (%)
Holding Current (Tj = 25°C)
Holding Current vs.
Junction Temperature
7
5
3
2
Time
Typical Example
Main Voltage
(dv/dt)c
VD Tj = 125°C
Main Current
(di/dt)c IT = 4A
IT
τ = 500µs
τ
Time
101
7
5
3
2
VD = 200V
f = 3Hz
Minimum
Characteristics
Value
I Quadrant
III Quadrant
100
7 0
10
2 3
5 7 101
2 3
5 7 102
Rate of Decay of On-State
Commutating Current (A/ms)
BCR10KM-12LB
Gate Trigger Current vs.
Gate Current Pulse Width
7
5
3
2
Time
Main Voltage
(dv/dt)c
VD
Main Current
(di/dt)c
IT
τ
Time
101
7
5
Gate Trigger Current (tw)
× 100 (%)
Gate Trigger Current (DC)
Critical Rate of Rise of Off-State
Commutating Voltage (V/µs)
Commutation Characteristics (Tj=150°C)
Typical Example
Tj = 150°C
IT = 4A
τ = 500µs
VD = 200V
f = 3Hz
I Quadrant
III Quadrant
3
2
Minimum
Characteristics
Value
100
7
100
2 3
5 7 101
2 3
5 7 102
103
7
5
4
3
2
Typical Example
IFGT I
IRGT I
IRGT III
102
7
5
4
3
2
101 0
10
2 3 4 5 7 101
2 3 4 5 7 102
Rate of Decay of On-State
Commutating Current (A/ms)
Gate Current Pulse Width (µs)
Gate Trigger Characteristics Test Circuits
Recommended Circuit Values Around The Triac
6Ω
Load
6Ω
C1
A
6V
V
Test Procedure I
A
V
V
330Ω
Test Procedure III
Rev.1.00, Aug.20.2004, page 6 of 7
C0
R0
330Ω
Test Procedure II
6Ω
6V
R1
A
6V
330Ω
C1 = 0.1 to 0.47µF C0 = 0.1µF
R1 = 47 to 100Ω
R0 = 100Ω
BCR10KM-12LB
Package Dimensions
TO-220FN
EIAJ Package Code

JEDEC Code

Mass (g) (reference value)
Lead Material
2.0
Cu alloy
2.8 ± 0.2
6.5 ± 0.3
3 ± 0.3
φ 3.2 ± 0.2
3.6 ± 0.3
14 ± 0.5
15 ± 0.3
10 ± 0.3
1.1 ± 0.2
1.1 ± 0.2
0.75 ± 0.15
0.75 ± 0.15
2.54 ± 0.25
4.5 ± 0.2
2.54 ± 0.25
2.6 ± 0.2
Symbol
Dimension in Millimeters
Min
Typ
Max
A
A1
A2
b
D
E
e
x
y
y1
ZD
ZE
Note 1) The dimensional figures indicate representative values unless
otherwise the tolerance is specified.
Order Code
Lead form
Standard packing
Quantity
Standard order code
Straight type
Plastic Magazine (Tube)
50 Type name
Lead form
Plastic Magazine (Tube)
50 Type name – Lead forming code
Note : Please confirm the specification about the shipping in detail.
Rev.1.00, Aug.20.2004, page 7 of 7
Standard order
code example
BCR10KM-12LB
BCR10KM-12LB-A8
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble
may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
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application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party.
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diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.
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information before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors.
Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors.
Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor
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Colophon .1.0
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