BCR08AM-12A Datasheet

BCR08AM-12A Datasheet
BCR08AM-12A
Triac
Low Power Use
REJ03G0343-0200
Rev.2.00
Nov 30, 2007
Features
•
•
•
•
IT (RMS) : 0.8 A
VDRM : 600 V
IRGTI, IRGT III : 5 mA
Planar Passivation Type
Outline
RENESAS Package code: PRSS0003EA-A
(Package name: TO-92)
2
3
13
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
1
2
Applications
Electric fan, air cleaner, and other general purpose control applications
Maximum Ratings
Parameter
Symbol
Repetitive peak off-state voltageNote1
Non-repetitive peak off-state voltageNote1
REJ03G0343-0200
Page 1 of 6
Rev.2.00
Nov 30, 2007
VDRM
VDSM
Voltage class
12
600
720
Unit
V
V
BCR08AM-12A
Parameter
RMS on-state current
Symbol
IT (RMS)
Ratings
0.8
Unit
A
Surge on-state current
ITSM
8
A
I2 t
0.26
A2s
PGM
PG (AV)
VGM
IGM
Tj
Tstg
—
1
0.1
6
0.5
– 40 to +125
– 40 to +125
0.23
W
W
V
A
°C
°C
g
Symbol
IDRM
VTM
Min.
—
—
Typ.
—
—
Max.
1.0
2.0
Unit
mA
V
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Mass
Conditions
Commercial frequency, sine full wave
360° conduction, Tc = 56°C
60Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
Notes: 1. Gate open.
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Gate trigger voltageNote2
Gate trigger currentNote2
Test conditions
Tj = 125°C, VDRM applied
Tc = 25°C, ITM = 1.2 A,
Instantaneous measurement
ΙΙ
VRGTΙ
—
—
2.0
V
ΙΙΙ
VRGTΙΙΙ
—
—
2.0
V
ΙΙ
IRGTΙ
—
—
5
mA
ΙΙΙ
IRGTΙΙΙ
—
—
5
mA
VGD
Rth (j-c)
0.1
—
—
—
—
60
V
°C/W
Tj = 125°C, VD = 1/2 VDRM
Junction to caseNote3
(dv/dt)c
0.5
—
—
V/µs
Tj = 125°C
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
Note4
commutating voltage
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. Case temperature is measured at the T2 terminal 1.5 mm away from the molded case.
4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
Test conditions
1. Junction temperature
Tj = 125°C
2. Rate of decay of on-state commutating current
(di/dt)c = – 0.4 A/ms
3. Peak off-state voltage
VD = 400 V
REJ03G0343-0200
Page 2 of 6
Rev.2.00
Nov 30, 2007
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
(di/dt)c
Time
Main Voltage
(dv/dt)c
Time
VD
BCR08AM-12A
Performance Curves
Maximum On-State Characteristics
10
Surge On-State Current (A)
Tj = 25°C
3
2
100
7
5
3
2
Gate Voltage (V)
3
2
Gate Trigger Voltage (Tj = t°C)
× 100 (%)
Gate Trigger Voltage (Tj = 25°C)
2.0
2.5
3.0
3.5
4.0
5
4
3
2
1
2 3 4 5 7 101
2 3 4 5 7 102
Gate Trigger Current vs.
Junction Temperature
PGM = 1W
PG(AV) =
0.1W
IRGT I, IRGT III
VGD = 0.1V
3 5 7 101 2 3 5 7 10 2 2 3 5 7 103
103
7
5
Typical Example
3
2
102
7
5
3
2
101
–60 –40 –20
0 20 40 60 80 100 120 140
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage vs.
Junction Temperature
Maximum Transient Thermal
Impedance Characteristics
(Junction to case, Junction to ambient)
103
7
5
Typical Example
3
2
102
7
5
3
2
–60 –40 –20
0 20 40 60 80 100 120 140
Junction Temperature (°C)
REJ03G0343-0200
Page 3 of 6
6
Gate Characteristics ( II and III)
IGM = 0.5A
101
7
Conduction Time (Cycles at 60Hz)
VGT
100
7
5
3
2
8
On-State Voltage (V)
VGM = 6V
101
7
5
3
2
10–1
7
5
3
1.5
9
0
100
Gate Trigger Current (Tj = t°C)
× 100 (%)
Gate Trigger Current (Tj = 25°C)
10–1
1.0
Rev.2.00
Nov 30, 2007
Transient Thermal Impedance (°C/W)
On-State Current (A)
101
7
5
Rated Surge On-State Current
2
3
4
5
310 2 3 5 7 10 2 3 5 7 10 2 3 5 7 10
2
Junction to ambient
102
7
5
Junction to case
3
2
101
7
5
3
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
Conduction Time (Cycles at 60Hz)
BCR08AM-12A
Allowable Case Temperature vs.
RMS On-State Current
Maximum On-State Power Dissipation
160
1.6
360° Conduction
1.4 Resistive,
1.2 inductive loads
1.0
0.8
0.6
0.4
0.2
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Curves apply regardless
of conduction angle
140
120
100
80
60
40
360° Conduction
20 Resistive,
inductive loads
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
RMS On-State Current (A)
RMS On-State Current (A)
Allowable Ambient Temperature vs.
RMS On-State Current
Repetitive Peak Off-State Current vs.
Junction Temperature
160
Ambient Temperature (°C)
Case Temperature (°C)
1.8
Natural convection
No fins
Curves apply regardless
of conduction angle
Resistive, inductive loads
140
120
100
80
60
40
360° Conduction
20 Resistive,
inductive loads
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
RMS On-State Current (A)
Repetitive Peak Off-State Current (Tj = t°C)
× 100 (%)
Repetitive Peak Off-State Current (Tj = 25°C)
On-State Power Dissipation (W)
2.0
105
7
5
3
2
Typical Example
104
7
5
3
2
103
7
5
3
2
102
–60 –40 –20
Latching Current vs.
Junction Temperature
102
103
Typical Example
7
5
Latching Current (mA)
Holding Current (Tj = t°C)
× 100 (%)
Holding Current (Tj = 25°C)
20 40 60 80 100 120 140
Junction Temperature (°C)
Holding Current vs.
Junction Temperature
3
2
102
7
5
3
2
101
–60 –40 –20 0
20 40 60 80 100 120 140
Junction Temperature (°C)
REJ03G0343-0200
Page 4 of 6
0
Rev.2.00
Nov 30, 2007
7
5
3
2
Distribution
T2+, G–
Typical Example
101
7
5
3
2
100
7
5
3
2
10–1
T2–, G–
Typical Example
–40
0
40
80
120
Junction Temperature (°C)
160
BCR08AM-12A
Breakover Voltage (dv/dt = xV/µs)
× 100 (%)
Breakover Voltage (dv/dt = 1V/µs)
160
Typical Example
140
120
100
80
60
40
20
0
–60 –40 –20 0
20 40 60 80 100 120 140
Typical Example
Tj = 125°C
140
120
I Quadrant
100
80
60
40
III Quadrant
20
0
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
Commutation Characteristics
Gate Trigger Current vs.
Gate Current Pulse Width
Typical Example
Tj = 125°C
IT = 1A
τ = 500µs
VD = 200V
3
2
100
7
5
III Quadrant
Minimum
Characteristics
Value
10–1
10–1
2
I Quadrant
5 7 100
3
2
3
5 7 101
Rate of Decay of On-State
Commutating Current (A/ms)
6Ω
6Ω
A
6V
V
330Ω
Test Procedure II
Rev.2.00
A
6V
V
330Ω
Test Procedure III
Nov 30, 2007
103
7
5
3
2
Typical Example
IRGT I
IRGT III
102
7
5
3
2
101 0
10
2 3 4 5 7 101
2 3 4 5 7 102
Gate Current Pulse Width (µs)
Gate Trigger Characteristics Test Circuits
REJ03G0343-0200
Page 5 of 6
160
Rate of Rise of Off-State Voltage (V/µs)
101
7
5
3
2
Breakover Voltage vs.
Rate of Rise of Off-State Voltage
Junction Temperature (°C)
Gate Trigger Current (tw)
× 100 (%)
Gate Trigger Current (DC)
Critical Rate of Rise of Off-State
Commutating Voltage (V/µs)
Breakover Voltage (Tj = t°C)
× 100 (%)
Breakover Voltage (Tj = 25°C)
Breakover Voltage vs.
Junction Temperature
BCR08AM-12A
Package Dimensions
Package Name
TO-92*
JEITA Package Code
SC-43A
RENESAS Code
PRSS0003EA-A
Previous Code

MASS[Typ.]
0.23g
Unit: mm
φ5.0Max
11.5Min
5.0Max
4.4
1.25 1.25
3.6
1.1
Circumscribed circle φ0.7
Order Code
Lead form
Straight type
Lead form
Form A8
Standard packing
Vinyl sack
Vinyl sack
Taping
Quantity
500
500
2000
Standard order code
Type name
Type name – Lead forming code
Type name – TB
Note : Please confirm the specification about the shipping in detail.
REJ03G0343-0200
Page 6 of 6
Rev.2.00
Nov 30, 2007
Standard order
code example
BCR08AM-12A
BCR08AM-12A-A6
BCR08AM-12A-TB
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