H5N2005DL H5N2005DS Datasheet

H5N2005DL H5N2005DS Datasheet
Preliminary Datasheet
H5N2005DL, H5N2005DS
R07DS0796EJ0400
(Previous: REJ03G1104-0300)
Rev.4.00
Jun 07, 2012
200V - 6A - MOS FET
High Speed Power Switching
Features
 Low on-resistance
RDS(on) = 0.52  typ. (at ID = 3 A, VGS = 10 V, Ta = 25C)
 Low drive power
 High speed switching
Outline
RENESAS Package code: PRSS0004ZD-B
(Package name: DPAK(L)-(2) )
RENESAS Package code: PRSS0004ZD-C
(Package name: DPAK(S) )
4
D
4
1. Gate
2. Drain
3. Source
4. Drain
G
1
1
2
3
S
2
3
Absolute Maximum Ratings
(Ta = 25C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Channel dissipation
Channel to case thermal Impedance
Channel temperature
Storage temperature
Symbol
VDSS
VGSS
ID
ID(pulse) Note 1
IDR
IDR(pulse) Note 1
IAPNote3
Pch Note 2
Value
200
30
6
24
6
24
6
25
Unit
V
V
A
A
A
A
A
W
ch-c
Tch
Tstg
5
150
–55 to +150
C/W
C
C
Notes: 1. PW  10 s, duty cycle  1%
2. Value at Tc = 25C
3. STch = 25C, Tch  150C
R07DS0796EJ0400 Rev.4.00
Jun 07, 2012
Page 1 of 6
H5N2005DL, H5N2005DS
Preliminary
Electrical Characteristics
(Ta = 25C)
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward voltage
Symbol
V(BR)DSS
IGSS
IDSS
VGS(off)
RDS(on)
|yfs|
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td (off)
tf
VDF
Min
200
—
—
3.0
—
2.0
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
0.52
3.4
300
44
12.5
9.8
2.0
5.2
23
24
43.5
11
1.0
Max
—
0.1
1
4.5
0.65
—
—
—
—
—
—
—
—
—
—
—
1.5
Unit
V
A
A
V

S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
Body-drain diode reverse recovery time
Body-drain diode reverse recovery charge
trr
Qrr
—
—
90
300
—
—
ns
nC
Test Conditions
ID = 10 mA, VGS = 0
VGS = 30 V, VDS = 0
VDS = 200 V, VGS = 0
VDS = 10 V, ID = 1 mA
ID = 3 A, VGS = 10 V Note 4
ID = 3 A, VDS = 10 V Note 4
VDS = 25 V
VGS = 0
f = 1 MHz
VDD = 160 V
VGS = 10 V
ID = 6 A
ID = 3 A
VGS = 10 V
RL = 33.3 
Rg = 10 
IF = 6 A, VGS = 0 Note 4
IF = 6 A, VGS = 0
diF/dt = 100 A/s
Notes: 4. Pulse test
R07DS0796EJ0400 Rev.4.00
Jun 07, 2012
Page 2 of 6
H5N2005DL, H5N2005DS
Preliminary
Main Characteristics
Typical Output Characteristics
Maximum Safe Operation Area
10
PW
10
10
=
10
0
Ta = 25°C
Pulse Test
μs
Drain Current ID (A)
Drain Current ID (A)
100
μs
1
0.1
Operation in this
area is limited by
RDS(on)
0.01
1
10
6V
4
5.5 V
2
VGS = 4.5 V
0
4
8
12
16
20
Drain to Source Voltage VDS (V)
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
Static Drain to Source on State Resistance
vs. Drain Current (Typical)
Drain to Source on State Resistance
RDS(on) (Ω)
VDS = 10 V
Pulse Test
16
Tc = −25°C
12
8
25°C
75°C
4
0
0
2
4
6
8
10
10
VGS = 10 V
Ta = 25°C
Pulse Test
1
0.1
0.1
1
10
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Static Drain to Source on State Resistance
vs. Temperature (Typical)
Body-Drain Diode Reverse
Recovery Time (Typical)
2.0
100
1000
VGS = 10 V
Pulse Test
1.6
1.2
ID = 6 A
0.8
1A
3A
0.4
0
−25
0
25
50
75
100 125 150
Case Temperature Tc (°C)
R07DS0796EJ0400 Rev.4.00
Jun 07, 2012
Reverse Recovery Time trr (ns)
Drain Current ID (A)
8V
6
0
1000
100
20
Static Drain to Source on State Resistance
RDS(on) (Ω)
10 V
5V
Tc = 25°C
1 shot
0.001
0.1
8
7V
100
di/dt = 100 A/μs
VGS = 0, Ta = 25°C
10
0.1
1
10
100
Reverse Drain Current IDR (A)
Page 3 of 6
H5N2005DL, H5N2005DS
Preliminary
Typical Capacitance vs.
Drain to Source Voltage (Typical)
Coss
1
0
10
Reverse Drain Current IDR (A)
Crss
10
VGS = 0
f = 1 MHz
Ta = 25°C
20
40
60
80
12
VDD = 160 V
100 V
200
8
50 V
VDS
100
4
VDD = 160 V
100 V
50 V
4
8
0
12
16
Gate Charge Qg (nC)
Reverse Drain Current vs.
Source to Drain Voltage (Typical)
Gate to Source Cutoff Voltage
vs. Case Temperature (Typical)
4
2
0
300
Drain to Source Voltage VDS (V)
6
0
16
VGS
ID = 6 A
Ta = 25 °C
0
0
100
VGS = 0 V
Ta = 25 °C
Pulse Test
8
400
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage VSD (V)
R07DS0796EJ0400 Rev.4.00
Jun 07, 2012
Gate to Source Voltage VGS (V)
100
Gate to Source Cutoff Voltage VGS(off) (V)
Capacitance C (pF)
Ciss
Drain to Source Voltage VDS (V)
1000
Dynamic Input Characteristics (Typical)
20
5
ID = 10 mA
4
3
1 mA
0.1 mA
2
1
VDS = 10 V
0
-25
0
25
50
75
Case Temperature
100 125 150
Tc (°C)
Page 4 of 6
H5N2005DL, H5N2005DS
Preliminary
Normalized Transient Thermal Impedance γs (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
θch – c(t) = γs (t) • θch – c
θch – c = 5°C/W, Tc = 25°C
0.1
0.05
0.02
0.03 0.01 ulse
p
ot
1sh
0.01
10 μ
PDM
D=
PW
T
PW
T
100 μ
1m
10 m
100 m
1
10
Pulse Width PW (s)
Switching Time Test Circuit
Waveform
Vout
Monitor
Vin Monitor
90%
D.U.T.
RL
10 Ω
Vin
10 V
Vin
Vout
10%
10%
V DD
= 100 V
90%
td(on)
R07DS0796EJ0400 Rev.4.00
Jun 07, 2012
10%
tr
90%
td(off)
tf
Page 5 of 6
H5N2005DL, H5N2005DS
Preliminary
Package Dimensions
 H5N2005DL
JEITA Package Code
⎯
RENESAS Code
PRSS0004ZD-B
Previous Code
MASS[Typ.]
DPAK(L)-(2) / DPAK(L)-(2)V
0.42g
1.7 ± 0.5
Package Name
DPAK(L)-(2)
2.3 ± 0.2
0.55 ± 0.1
1.2 ± 0.3
16.2 ± 0.5
3.1 ± 0.5
1.15 ± 0.1
0.8 ± 0.1
(0.7)
4.7 ± 0.5
5.5 ± 0.5
6.5 ± 0.5
5.4 ± 0.5
Unit: mm
0.55 ± 0.1
0.55 ± 0.1
2.29 ± 0.5
2.29 ± 0.5
 H5N2005DS
JEITA Package Code
SC-63
RENESAS Code
PRSS0004ZD-C
Previous Code
DPAK(S) / DPAK(S)V
Unit: mm
(0.1)
(5.1)
(5.1)
(0.1)
MASS[Typ.]
0.28g
2.3 ± 0.2
0.55 ± 0.1
6.5 ± 0.5
5.4 ± 0.5
1.2 Max
5.5 ± 0.5
1.5 ± 0.5
Package Name
DPAK(S)
0 – 0.25
2.5 ± 0.5
(1.2)
1.0 Max.
2.29 ± 0.5
0.8 ± 0.1
0.55 ± 0.1
2.29 ± 0.5
Ordering Information
Orderable Part Number
H5N2005DL-E
H5N2005DSTL-E
R07DS0796EJ0400 Rev.4.00
Jun 07, 2012
Quantity
2160 pcs
3000 pcs
Shipping Container
Box (Tube)
Taping
Page 6 of 6
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