BCR8FM-12LB Data Sheet (600V - 8A

BCR8FM-12LB Data Sheet (600V - 8A
Preliminary Datasheet
BCR8FM-12LB
R07DS1186EJ0100
Rev.1.00
Mar 03, 2014
600V - 8A - Triac
Medium Power Use
Features
•
•
•
•
• Insulated Type
• Planar Passivation Type
• Viso: 2000V
IT (RMS) : 8 A
VDRM : 600 V
Tj: 150 °C
IFGTI, IRGTI, IRGT III:30 mA(20mA) Note5
Outline
Applications
Switching mode power supply, washing machine, motor control, heater control, and other general purpose control
applications.
Maximum Ratings
Parameter
Voltage class
12
600
720
Symbol
Note1
Repetitive peak off-state voltage
Non-repetitive peak off-state voltageNote1
VDRM
VDSM
Parameter
RMS on-state current
Symbol
IT (RMS)
Ratings
8
Unit
A
Surge on-state current
ITSM
80
A
I2t
26
A2s
PGM
PG (AV)
VGM
IGM
Tj
Tstg
—
Viso
5
0.5
10
2
–40 to +150
–40 to +150
1.9
2000
W
W
V
A
°C
°C
g
V
I2t for fusion
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction Temperature
Storage temperature
Mass
Isolation voltage Note6
R07DS1186EJ0100 Rev.1.00
Mar 03, 2014
Unit
V
V
Conditions
Commercial frequency, sine full wave
360°conduction, Tc = 114°C
60 Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60 Hz, surge on-state current
Typical value
Ta=25°C, AC 1 minute,
T1•T2•G terminal to case
Page 1 of 7
BCR8FM-12LB
Preliminary
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Symbol
IDRM
VTM
Min.
—
—
Typ.
—
—
Max.
2.0
1.6
Unit
mA
V
Test conditions
Tj = 150°C, VDRM applied
Tc = 25°C, ITM = 12A,
instantaneous measurement
Gate trigger voltageNote2
Ι
ΙΙ
ΙΙΙ
VFGTΙ
VRGTΙ
VRGTΙΙΙ
—
—
—
—
—
—
1.5
1.5
1.5
V
V
V
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
Gate trigger curentNote2
Ι
ΙΙ
ΙΙΙ
IFGTΙ
IRGTΙ
IRGTΙΙΙ
—
—
—
—
—
—
30 Note5
30 Note5
30 Note5
mA
mA
mA
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
VGD
0.2
0.1
—
—
—
—
—
—
3.6
V
10
1
—
—
—
—
Gate non-trigger voltage
Thermal resistance
Rth (j-c)
Critical-rate of rise of off-state
Note4
commutation voltage
Notes: 1.
2.
3.
4.
5.
6.
(dv/dt)c
°C/W
V/μs
Tj = 125°C, VD = 1/2 VDRM
Tj = 150°C, VD = 1/2 VDRM
Note3
Junction to case
Tj = 125°C
Tj = 150°C
Gate open.
Measurement using the gate trigger characteristics measurement circuit.
The contact themal resistance Rth (c-f) in case of greasing is 0.5°C /W.
Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below.
High sensitivity (IGT≤20mA) is also available.(IGT item:1)
Make sure that your finished product containing this device meets your safe isolation requirements.
For safety, it's advisable that heatsink is electrically floating.
Test conditions
Commutating voltage and current waveforms
(inductive load)
1. Junction temperature
Tj = 125°C/150°C
2.Rate of rise of off-state commutating voltage
(dv/dt)c =-4 A/ms
3.Peak off-state voltage
VD = 400 V
R07DS1186EJ0100 Rev.1.00
Mar 03, 2014
Page 2 of 7
BCR8FM-12LB
Preliminary
Performance Curves
Maximum On-State Characteristics
Rated Surge On-State Current
2
Tj = 150°C
1
10
7
5
3
2
Tj = 25°C
0
10
7
5
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
70
60
50
40
30
20
10
2 3
5 7 101
2 3
5 7 102
Conduction Time (Cycles at 60Hz)
Gate Characteristics (I, II and III)
Gate Trigger Current vs.
Junction Temperature
101
7
5
3 VGT = 1.5V
2
PG(AV) = 0.5W
PGM = 5W
IGM = 2A
100
7
5
3
2
10–1
7 IFGT I IRGT I, IRGT III VGD = 0.1V
5
1
2
3
4
10 2 3 5 710 2 3 5 710 2 3 5 710
Gate Trigger Current (Tj = t°C)
× 100 (%)
Gate Trigger Current (Tj = 25°C)
Gate Voltage (V)
80
On-State Voltage (V)
3
2 VGM = 10V
Gate Trigger Voltage (Tj = t°C)
× 100 (%)
Gate Trigger Voltage (Tj = 25°C)
90
0 0
10
3
10
7
5
3
2
Typical Example
IRGT III
2
10
I
,I
7 FGT I RGT I
5
3
2
1
10
–60 –40–20 0 20 40 60 80 100 120 140 160
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage vs.
Junction Temperature
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
3
10
7
5
Typical Example
3
2
2
10
7
5
3
2
1
10
–60 –40–20 0 20 40 60 80 100 120 140 160
Junction Temperature (°C)
R07DS1186EJ0100 Rev.1.00
Mar 03, 2014
Transient Thermal Impedance (°C/W)
On-State Current (A)
3
2
Surge On-State Current (A)
100
10
7
5
102 2 3 5 7 103 2 3 5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
Conduction Time (Cycles at 60Hz)
Page 3 of 7
BCR8FM-12LB
Preliminary
10
7
5
3
2
2
10
7
5
3
2
1
10
7
5
3
2
0
10
7
5
3
2
–1
10 1
2
3
4
10 2 3 5 710 2 3 5 710 2 3 5 710 2 3 5 710
On-State Power Dissipation (W)
5
14
12 360° Conduction
Resistive,
10 inductive loads
8
6
4
2
0
2
4
6
8
10 12 14 16
Conduction Time (Cycles at 60Hz)
RMS On-State Current (A)
Allowable Case Temperature vs.
RMS On-State Current
Allowable Ambient Temperature vs.
RMS On-State Current
120
100
80
60
40
360° Conduction
Resistive,
inductive loads
20
0
0
2
4
6
8
160
Ambient Temperature (°C)
Curves apply regardless
of conduction angle
140
Case Temperature (°C)
16
No Fins
160
All fins are black painted
aluminum and greased
140
120 × 120 × t2.3
120
100 × 100 × t2.3
100
60 × 60 × t2.3
80
60
40
20
0
0
10 12 14 16
Curves apply
regardless of
conduction angle
Resistive,
inductive loads
Natural convection
2
4
6
8
10 12 14 16
RMS On-State Current (A)
RMS On-State Current (A)
Allowable Ambient Temperature vs.
RMS On-State Current
Repetitive Peak Off-State Current vs.
Junction Temperature
160
Ambient Temperature (°C)
Maximum On-State Power Dissipation
3
Natural convection
No Fins
Curves apply regardless
of conduction angle
Resistive, inductive loads
140
120
100
80
60
40
20
0
0
0.5
1.0
1.5
2.0
2.5
RMS On-State Current (A)
R07DS1186EJ0100 Rev.1.00
Mar 03, 2014
3.0
Repetitive Peak Off-State Current (Tj = t°C)
× 100 (%)
Repetitive Peak Off-State Current (Tj = 25°C)
Transient Thermal Impedance (°C/W)
Maximum Transient Thermal Impedance
Characteristics (Junction to ambient)
6
10
7
5
3
2
5
10
7
5
3
2
4
10
7
5
3
2
3
10
7
5
3
2
2
10
Typical Example
–60 –40–20 0 20 40 60 80 100 120 140 160
Junction Temperature (°C)
Page 4 of 7
BCR8FM-12LB
Preliminary
Latching Current vs.
Junction Temperature
3
103
Typical Example
Latching Current (mA)
7
5
4
3
2
102
7
5
4
3
2
101
–60 –40 –20 0 20 40 60 80 100 120140 160
10
7
5
3
2
Distribution
T2+, G–
Typical Example
2
10
7
5
3
2
101
7
5
3 T2+, G+
2 T –, G– Typical Example
2
0
10
–40
0
40
80
120
160
Junction Temperature (°C)
Breakover Voltage vs.
Junction Temperature
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=125°C)
160
Typical Example
140
120
100
80
60
40
20
0
–60 –40–20 0 20 40 60 80 100 120 140 160
Breakover Voltage (dv/dt = xV/μs)
× 100 (%)
Breakover Voltage (dv/dt = 1V/μs)
Junction Temperature (°C)
160
Typical Example
Tj = 125°C
140
120
100
80
60
III Quadrant
40
20
I Quadrant
0 1
2
3
4
10 2 3 5 710 2 3 5 710 2 3 5 710
Junction Temperature (°C)
Rate of Rise of Off-State Voltage (V/μs)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=150°C)
Commutation Characteristics (Tj=125°C)
160
140
Typical Example
Tj = 150°C
120
100
80
60
40
III Quadrant
20
I Quadrant
0 1
2
3
4
10 2 3 5 710 2 3 5 710 2 3 5 710
Rate of Rise of Off-State Voltage (V/μs)
R07DS1186EJ0100 Rev.1.00
Mar 03, 2014
Critical Rate of Rise of Off-State
Commutating Voltage (V/μs)
Breakover Voltage (dv/dt = xV/μs)
× 100 (%)
Breakover Voltage (dv/dt = 1V/μs)
Breakover Voltage (Tj = t°C)
× 100 (%)
Breakover Voltage (Tj = 25°C)
Holding Current (Tj = t°C)
× 100 (%)
Holding Current (Tj = 25°C)
Holding Current vs.
Junction Temperature
7
5
3
2
101
7
5
Time
Main Voltage
(dv/dt)c
VD
Main Current
(di/dt)c
IT
τ
Time
Minimum
Characteristics
Value
Typical Example
Tj = 125°C
IT = 4A
τ = 500μs
VD = 200V
f = 3Hz
I Quadrant
3
2
0
10
7 0
10
III Quadrant
2 3
5 7 10
1
2 3
5 7 10
2
Rate of Decay of On-State
Commutating Current (A/ms)
Page 5 of 7
BCR8FM-12LB
Preliminary
Gate Trigger Current vs.
Gate Current Pulse Width
7
5
3
2
Time
Main Voltage
(dv/dt)c
VD
Main Current
(di/dt)c
IT
τ
Time
1
10
7
5
Gate Trigger Current (tw)
× 100 (%)
Gate Trigger Current (DC)
Critical Rate of Rise of Off-State
Commutating Voltage (V/μs)
Commutation Characteristics (Tj=150°C)
Typical Example
Tj = 150°C
IT = 4A
τ = 500μs
VD = 200V
f = 3Hz
III Quadrant
I Quadrant
3
2
Minimum
Characteristics
Value
0
10
7 0
10
2 3
5 7 10
1
2 3
5 7 10
2
3
10
7
5
Typical Example
IFGT I
3
2
IRGT I
IRGT III
2
10
7
5
3
2
1
10 0
10
2 3
5 7 10
1
2 3
5 7 10
2
Rate of Decay of On-State
Commutating Current (A/ms)
Gate Current Pulse Width (μs)
Gate Trigger Characteristics Test Circuits
Recommended Circuit Values Around The Triac
6Ω
6Ω
Load
C1
A
6V
V
Test Procedure I
R1
A
6V
330Ω
V
330Ω
Test Procedure II
C0
R0
C1 = 0.1 to 0.47μF C0 = 0.1μF
R1 = 47 to 100Ω
R0 = 100Ω
6Ω
A
6V
V
330Ω
Test Procedure III
R07DS1186EJ0100 Rev.1.00
Mar 03, 2014
Page 6 of 7
BCR8FM-12LB
Preliminary
Package Dimensions
Package Name
TO-220FP
JEITA Package Code

RENESAS Code
PRSS0003AG-A
Previous Code

MASS[Typ.]
1.9g
Unit: mm
10.16 ± 0.20
2.54 ± 0.20
6.68 ± 0.20
3.3 ± 0.2
1.28 ± 0.30
3.18 ± 0.20
12.98 ± 0.30
15.87 ± 0.20
3.18 ± 0.10
Max 1.47
2.76 ± 0.20
0.80 ± 0.20
0.50
4.7 ± 0.2
5.08 ± 0.20
Ordering Information
Orderable Part Number
Packing
Quantity
BCR8FM-12LB#BB0
Tube
50 pcs.
BCR8FM-12LB-1#BB0
Tube
50 pcs.
BCR8FM-12LB-#BB0
Tube
50 pcs.
BCR8FM-12LB1#BB0
Tube
50 pcs.
Note : Please confirm the specification about the shipping in detail.
R07DS1186EJ0100 Rev.1.00
Mar 03, 2014
Remark
Straight type
Straight type, IGT item:1
:Lead forming type
:Lead forming type, IGT item:1
Page 7 of 7
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