CR8FM-12B Data Sheet (600V-8A-Thyristor / Medium Power Use)

CR8FM-12B Data Sheet (600V-8A-Thyristor / Medium Power Use)
Preliminary Datasheet
CR8FM-12B
R07DS1099EJ0100
Rev.1.00
Aug 02, 2013
600V-8A-Thyristor
Medium Power Use
Features
•
•
•
•
• Insulated Type
• Planar Passivation Type
IT (AV) : 8 A
VDRM : 600 V
IGT : 15 mA
Viso : 2000 V
Outline
RENESAS Package code: PRSS0003AG-A
(Package name: TO-220FP)
2
1. Cathode
2. Anode
3. Gate
3
1
1
2 3
Applications
Switching mode power supply, regulator for autocycle, motor control, heater control, and other general purpose control
applications
Maximum Ratings
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
DC off-state voltage
R07DS1099EJ0100 Rev.1.00
Aug 02, 2013
Symbol
VRRM
VRSM
VR(DC)
VDRM
VD(DC)
Voltage class
12
600
720
480
600
480
Unit
V
V
V
V
V
Page 1 of 7
CR8FM-12B
Parameter
RMS on-state current
Average on-state current
Surge on-state current
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Mass
Isolation voltage
Preliminary
Symbol
IT (RMS)
IT (AV)
Ratings
12.6
8
Unit
A
A
ITSM
120
A
I2t
60
A2s
PGM
PG (AV)
VFGM
VRGM
IFGM
Tj
Tstg
—
Viso
5
0.5
6
10
2
– 40 to +150
– 40 to +150
1.9
2000
W
W
V
V
A
°C
°C
g
V
Conditions
Commercial frequency, sine half wave
180° conduction, Tc = 106°C
60Hz sine half wave 1 full cycle,
peak value, non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
Ta = 25°C, AC 1 minute,
each terminal to case
Electrical Characteristics
Parameter
Repetitive peak reverse current
Symbol
IRRM
Repetitive peak off-state current
IDRM
On-state voltage
VTM
Gate trigger voltage
Gate non-trigger voltage
VGT
VGD
Gate trigger current
Holding current
Thermal resistance
IGT
IH
Rth(j-c)
Min.
—
—
—
—
—
Typ.
—
—
—
—
—
Max.
2.0
5.0
2.0
5.0
1.4
Unit
mA
mA
mA
mA
V
—
0.2
0.1
—
—
—
—
—
—
—
15
—
1.0
—
—
15
—
3.7
V
V
V
mA
mA
°C/W
Test conditions
Tj = 125°C, VRRM applied
Tj = 150°C, VRRM applied
Tj = 125°C, VDRM applied
Tj = 150°C, VDRM applied
Tc = 25°C, ITM = 25 A,
instantaneous value
Tj = 25°C, VD = 6 V, IT = 1 A
Tj = 125°C, VD = 1/2 VDRM
Tj = 150°C, VD = 1/2 VDRM
Tj = 25°C, VD = 6 V, IT = 1 A
Tj = 25°C, VD = 12 V
Junction to case Note1
Notes: 1. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W.
R07DS1099EJ0100 Rev.1.00
Aug 02, 2013
Page 2 of 7
CR8FM-12B
Preliminary
Performance Curves
Rated Surge On-State Current
Maximum On-State Characteristics
103
200
Surge On-State Current (A)
102
101
1
2
3
4
× 100 (%)
Gate Trigger Current (Tj = t°C)
Gate Voltage (V)
× 100 (%)
Gate Trigger Voltage (Tj = t°C)
Gate Trigger Voltage (Tj = 25°C)
PGM = 5W
PG(AV)
= 0.5W
IGT = 15mA
VGD = 0.2V
101
IFGM = 2A
102
103
103
Typical Example
102
101
100
–40
0
40
80
160
120
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage vs.
Junction Temperature
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
Typical Example
102
–40
102
101
Gate Trigger Current vs.
Junction Temperature
103
101
40
Gate Characteristics
VGT = 1V
10-1
80
Conduction Time (Cycles at 50Hz)
VFGM = 6V
100
120
On-State Voltage (V)
102
101
160
0
100
5
Gate Trigger Current (Tj = 25°C)
100
0
0
40
80
120
Junction Temperature (°C)
R07DS1099EJ0100 Rev.1.00
Aug 02, 2013
160
Transient Thermal Impedance (°C/W)
On-State Current (A)
Tc = 125°C
102
101
100
10–1 –3
10
10–2
10–1
100
101
Time (s)
Page 3 of 7
CR8FM-12B
Preliminary
Allowable Case Temperature vs.
Average On-State Current
(Single-Phase Half Wave)
Maximum Average Power Dissipation
(Single-Phase Half Wave)
160
16
Case Temperature (°C)
Average Power Dissipation (W)
20
180°
12
120°
90°
θ = 30°
60°
8
θ
4
0
360°
2
4
6
8
10
12
14
Resistive,
inductive loads
100
80
180°
60
120°
90°
40
60°
θ = 30°
2
4
6
8
10
14
12
16
Average On-State Current (A)
Average On-State Current (A)
Maximum Average Power Dissipation
(Single-Phase Full Wave)
Allowable Case Temperature vs.
Average On-State Current
(Single-Phase Full Wave)
160
16
180°
θ = 30°
12
120°
90°
60°
8
θ
4
θ
360°
Case Temperature (°C)
Average Power Dissipation (W)
360°
0
0
16
20
Resistive
loads
140
0
2
4
6
8
10
12
80
180°
60
120°
90°
40
0
0
16
θ
100
60°
20
14
θ
360°
120
θ = 30°
Resistive loads
0
2
4
6
8
10
12
14
Average On-State Current (A)
Average On-State Current (A)
Maximum Average Power Dissipation
(Rectangular Wave)
Allowable Case Temperature vs.
Average On-State Current
(Rectangular Wave)
20
16
90° 120°
12
DC
270°
θ = 30°
8
θ
4
360°
2
4
6
8
10
12
14
Average On-State Current (A)
R07DS1099EJ0100 Rev.1.00
Aug 02, 2013
16
θ
360°
120
100
80
60
40
20
Resistive,
inductive loads
0
Resistive,
inductive loads
140
60°
0
16
160
180°
Case Temperature (°C)
Average Power Dissipation (W)
θ
120
20
Resistive,
inductive loads
0
140
0
0
180° 270°
60°
DC
θ = 30° 90° 120°
2
4
6
8
10
12
14
16
Average On-State Current (A)
Page 4 of 7
Breakover Voltage vs.
Junction Temperature
160
Typical Example
140
120
100
80
60
40
20
0
–40
0
40
80
120
160
Breakover Voltage vs.
Rate of Rise of Off-State Voltage
160
Tj = 125°C
Typical Example
140
120
100
80
60
40
20
0
101
102
103
104
Repetitive Peak Reverse Voltage vs.
Junction Temperature
160
Typical Example
140
120
100
80
60
40
20
0
–40
0
40
80
120
160
Junction Temperature (°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage
160
Tj = 150°C
Typical Example
140
120
100
80
60
40
20
0 1
10
102
103
104
Rate of Rise of Off-State Voltage (V/μs)
Rate of Rise of Off-State Voltage (V/μs)
Holding Current vs.
Junction Temperature
Turn-Off Time vs.
Junction Temperature
103
100
Typical Example
Turn-Off Time (μs)
Holding Current (Tj = t°C)
× 100 (%)
Holding Current (Tj = 25°C)
Breakover Voltage (dv/dt = vV/μs)
× 100 (%)
Breakover Voltage (dv/dt = 1V/μs)
Junction Temperature (°C)
Repetitive Peak Reverse Voltage (Tj = t°C)
× 100 (%)
Repetitive Peak Reverse Voltage (Tj = 25°C)
Preliminary
Breakover Voltage (dv/dt = vV/μs)
× 100 (%)
Breakover Voltage (dv/dt = 1V/μs)
Breakover Voltage (Tj = t°C)
× 100 (%)
Breakover Voltage (Tj = 25°C)
CR8FM-12B
102
IT = 8A, –di/dt = 5A/µs,
VD = 300V, dv/dt = 20V/µs
VR = 50V
80
60
40
Typical Example
20
Distribution
101
–40
0
40
80
120
Junction Temperature (°C)
R07DS1099EJ0100 Rev.1.00
Aug 02, 2013
160
0
0
20
40
60
80 100 120 140 160
Junction Temperature (°C)
Page 5 of 7
CR8FM-12B
Preliminary
Gate Trigger Current (tw)
× 100 (%)
Gate Trigger Current (DC)
Gate Trigger Current vs.
Gate Current Pulse Width
103
Typical Example
102
101 -1
10
100
101
102
Gate Current Pulse Width (μs)
R07DS1099EJ0100 Rev.1.00
Aug 02, 2013
Page 6 of 7
CR8FM-12B
Preliminary
Package Dimensions
Package Name
TO-220FP
JEITA Package Code

RENESAS Code
PRSS0003AG-A
Previous Code

MASS[Typ.]
1.9g
Unit: mm
10.16 ± 0.20
2.54 ± 0.20
6.68 ± 0.20
3.3 ± 0.2
1.28 ± 0.30
3.18 ± 0.20
12.98 ± 0.30
15.87 ± 0.20
3.18 ± 0.10
Max 1.47
2.76 ± 0.20
0.80 ± 0.20
0.50
4.7 ± 0.2
5.08 ± 0.20
Ordering Information
Orderable Part Number
CR8FM-12B#BB0
Packing
Tube
Quantity
50 pcs.
Remark
Straight type
Note : Please confirm the specification about the shipping in detail.
R07DS1099EJ0100 Rev.1.00
Aug 02, 2013
Page 7 of 7
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