datasheet for S8201 by Polyfet
polyfet rf devices
S8201
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
SILICON GATE ENHANCEMENT MODE
RF POWER VDMOS TRANSISTOR
4.0 Watts Single Ended
Package Style SO8
"Polyfet"TM process
HIGH EFFICIENCY, LINEAR
HIGH GAIN, LOW NOISE
features
low feedback and output capacitances,
resulting in high Ft transistors with high
input impedance and high efficiency.
ROHS COMPLIANT
o
ABSOLUTE MAXIMUM RATINGS ( T = 25 C )
Total
Device
Dissipation
Junction to
Case Thermal
Resistance
20 Watts
o
10.00 C/W
Maximum
Junction
Temperature
o
200 C
DC Drain
Current
Storage
Temperature
o
o
-65 C to 150 C
RF CHARACTERISTICS (
SYMBOL PARAMETER
MIN
Gps
Common Source Power Gain
η
Drain Efficiency
VSWR
TYP
1.2 A
Drain to
Source
Voltage
Gate to
Source
Voltage
70 V
70 V
20 V
4.0 WATTS OUTPUT )
MAX
10
45
Load Mismatch Tolerance
Drain to
Gate
Voltage
20:1
UNITS TEST CONDITIONS
dB
Idq = 0.20 A, Vds =
28.0 V, F =1,000 MHz
%
Idq = 0.20 A, Vds =
28.0 V, F =1,000 MHz
Relative Idq = 0.20 A, Vds = 28.0 V, F =1,000 MHz
ELECTRICAL CHARACTERISTICS ( EACH SIDE )
SYMBOL PARAMETER
MIN
TYP
MAX
UNITS TEST CONDITIONS
V
Ids = 10.00 mA, Vgs = 0V
Bvdss
Drain Breakdown Voltage
Idss
Zero Bias Drain Current
0.2
mA
Vds = 28.0 V, Vgs = 0V
Igss
Gate Leakage Current
1
uA
Vds = 0V Vgs = 30V
Vgs
Gate Bias for Drain Current
5
V
gM
Forward Transconductance
65
2
Ids = 0.02 A, Vgs = Vds
0.3
Mho
Vds = 10V, Vgs = 5V
Rdson
Saturation Resistance
4.00
Ohm
Vgs = 20V, Ids = 0.50 A
Idsat
Saturation Current
1.40
Amp
Vgs = 20V, Vds = 10V
Ciss
Common Source Input Capacitance
10.0
pF
Vds = 28.0 Vgs = 0V, F = 1 MHz
Crss
Common Source Feedback Capacitance
0.6
pF
Vds = 28.0 Vgs = 0V, F = 1 MHz
Coss
Common Source Output Capacitance
6.0
pF
Vds = 28.0 Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 10/01/2007
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sell@polyfet.com URL:www.polyfet.com
S8201
POUT VS PIN GRAPH
CAPACITANCE VS VOLTAGE
S8201 POUT VS PIN Freq=1000MHz, VDS=28V, Idq=.2A
S2A 1 DICE CAPACITANCE
100
6
13.50
5
12.50
Pout
4
11.50
3
10.50
2
9.50
Gain
Efficiency = 45%
1
CAPACITANCE IN PFS
Coss
10
Ciss
1
8.50
0
7.50
0
0.2
0.4
0.6
PIN IN WATTS
0.8
Crss
0.1
0
1
4
8
12
16
20
24
28
VDS IN VOLTS
IV CURVE
ID & GM VS VGS
S2A 1 DIE ID & GM Vs VG
S2A 1 DIE IV
10.00
1.4
Id in amps; Gm in mhos
1.2
ID IN AMPS
1
0.8
0.6
0.4
Id
1.00
0.10
gM
0.2
0.01
0
0
vg=2v
2
4
Vg=4v
6
8
10
12
14
VDS IN VOLTS vg=8v
Vg=6v
16
0
18
20
0
2
vg=12v
Zin Zout
4
6
8
10
Vgs in Volts
12
14
16
18
PACKAGE DIMENSIONS IN INCHES
Tolerance .XX +/-0.01
POLYFET RF DEVICES
.XXX +/-.005 inches
REVISION 10/01/2007
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sell@polyfet.com URL:www.polyfet.com
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