BLF888,112 datasheet

BLF888,112 datasheet
BLF888
UHF power LDMOS transistor
Rev. 6 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial
applications. The transistor is optimized for digital applications and can deliver 110 W
average DVB-T broadband over the full UHF band from 470 MHz to 860 MHz. The
excellent ruggedness of this device makes it ideal for digital transmitter applications.
Table 1.
Application information
RF performance at VDS = 50 V in a common source 860 MHz narrowband test circuit unless
otherwise specified.
f
PL(PEP) PL(AV) Gp
D
IMD3
(MHz)
(W)
(W)
(dB)
(%)
(dBc) (dBc)
2-Tone, class AB
f1 = 860; f2 = 860.1
500
250
19
46
32
-
DVB-T (8k OFDM)
858
-
110
19
31
-
31 [1]
Mode of operation
[1]
IMDshldr
Measured [dBc] with delta marker at 4.3 MHz from center frequency.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features and benefits
 2-Tone performance at 860 MHz, a drain-source voltage VDS of 50 V and a quiescent
drain current IDq = 1.3 A:
 Peak envelope power load power = 500 W
 Power gain = 19 dB
 Drain efficiency = 46 %
 Third order intermodulation distortion = 32 dBc
 DVB performance at 858 MHz, a drain-source voltage VDS of 50 V and a quiescent
drain current IDq = 1.3 A:
 Average output power = 110 W
 Power gain = 19 dB
 Drain efficiency = 31 %
 Shoulder distance = 31 dBc (4.3 MHz from center frequency)
 Integrated ESD protection
 Advanced flange material for optimum thermal behavior and reliability
BLF888
UHF power LDMOS transistor








Excellent ruggedness
High power gain
High efficiency
Designed for broadband operation (470 MHz to 860 MHz)
Excellent reliability
Internal input matching for high gain and optimum broadband operation
Easy power control
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
 Communication transmitter applications in the UHF band
 Industrial applications in the UHF band
2. Pinning information
Table 2.
Pinning
Pin
Description
1
drain1
2
drain2
3
gate1
4
gate2
5
Simplified outline
1
Graphic symbol
2
1
5
3
3
5
4
4
[1]
source
2
sym117
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Type number Package
Name Description
BLF888
-
Version
flanged LDMOST ceramic package; 2 mounting holes; 4 leads SOT979A
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
BLF888#6
Product data sheet
Symbol
Parameter
VDS
Conditions
Min
Max
Unit
drain-source voltage
-
104
V
VGS
gate-source voltage
0.5
+11
V
Tstg
storage temperature
65
+150
C
Tj
junction temperature
-
200
C
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Rev. 6 — 1 September 2015
© Ampleon The Netherlands B.V. 2015. All rights reserved.
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BLF888
UHF power LDMOS transistor
5. Thermal characteristics
Table 5.
Symbol
Rth(j-c)
[1]
Thermal characteristics
Parameter
Conditions
thermal resistance from junction to case
Tcase = 80 C; PL(AV) = 110 W
[1]
Typ
Unit
0.24
K/W
Rth(j-c) is measured under RF conditions.
6. Characteristics
Table 6.
DC characteristics
Tj = 25 C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
V(BR)DSS
drain-source breakdown voltage
VGS = 0 V; ID = 2.7 mA
[1]
104
-
-
V
VGS(th)
gate-source threshold voltage
VDS = 10 V; ID = 270 mA
[1]
1.4
1.9
2.4
V
IDSS
drain leakage current
VGS = 0 V; VDS = 50 V
-
-
2.8
A
IDSX
drain cut-off current
VGS = VGS(th) + 3.75 V; VDS = 10 V
-
43
-
A
IGSS
gate leakage current
VGS = 10 V; VDS = 0 V
-
-
280
nA
gfs
forward transconductance
VDS = 10 V; ID = 13.5 A
[1]
-
17
-
S
VGS = VGS(th) + 3.75 V; ID = 9.5 A
[1]
-
105
-
m
RDS(on)
drain-source on-state resistance
Ciss
input capacitance
VGS = 0 V; VDS = 50 V; f = 1 MHz
[2]
-
205
-
pF
Coss
output capacitance
VGS = 0 V; VDS = 50 V; f = 1 MHz
[2]
-
65
-
pF
Crss
reverse transfer capacitance
VGS = 0 V; VDS = 50 V; f = 1 MHz
[2]
-
2.2
-
pF
Min
Typ
Max
Unit
-
50
-
V
[1]
ID is the drain current.
[2]
Capacitance values without internal matching.
Table 7.
RF characteristics
Th = 25 C unless otherwise specified.
Symbol
Parameter
Conditions
2-Tone, class AB
VDS
drain-source voltage
IDq
quiescent drain current
-
1.3
-
A
PL(PEP)
peak envelope power load power
500
-
-
W
PL(AV)
average output power
250
-
-
W
Gp
power gain
18
19
-
dB
D
drain efficiency
42
46
-
%
IMD3
third-order intermodulation distortion
-
32
28
dBc
-
50
-
V
total device
DVB-T (8k OFDM)
VDS
drain-source voltage
IDq
quiescent drain current
-
1.3
-
A
PL(AV)
average output power
110
-
-
W
Gp
power gain
18
19
-
dB
BLF888#6
Product data sheet
total device
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Rev. 6 — 1 September 2015
© Ampleon The Netherlands B.V. 2015. All rights reserved.
3 of 17
BLF888
UHF power LDMOS transistor
Table 7.
RF characteristics …continued
Th = 25 C unless otherwise specified.
Symbol
Parameter
Conditions
D
drain efficiency
IMDshldr
intermodulation distortion shoulder
[1]
PAR
peak-to-average ratio
[2]
Min
Typ
Max
Unit
-
%
28
31
-
31
28
dBc
-
8.3
-
dB
[1]
Measured [dBc] with delta marker at 4.3 MHz from center frequency.
[2]
PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on CCDF.
001aaj274
250
Coss
(pF)
200
150
100
50
0
20
40
60
VDS (V)
VGS = 0 V; f = 1 MHz.
Fig 1.
Output capacitance as a function of drain-source voltage; typical values per
section; capacitance value without internal matching
6.1 Ruggedness in class-AB operation
The BLF888 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1
through all phases under the following conditions: VDS = 50 V; f = 860 MHz at rated
power. Ruggedness is measured in the application circuit as described in Section 8.
BLF888#6
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 6 — 1 September 2015
© Ampleon The Netherlands B.V. 2015. All rights reserved.
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BLF888
UHF power LDMOS transistor
7. Application information
7.1 Narrowband RF figures
7.1.1 2-Tone
001aak641
22
Gp
(dB)
20
60
50
22
Gp
(dB)
20
40
18
30
16
ηD
(%)
Gp
18
16
ηD
001aak642
IMD3
(dBc)
−10
Gp
−20
−30
IMD3
14
20
14
−40
12
10
12
−50
10
0
100
200
0
400
300
0
100
2-Tone power gain and drain efficiency as
function of load power; typical values
Product data sheet
200
300
PL (W)
VDS = 50 V; IDq = 1.3 A; measured in a common source
narrowband 860 MHz test circuit.
BLF888#6
−60
400
10
PL (W)
Fig 2.
0
VDS = 50 V; IDq = 1.3 A; measured in a common source
narrowband 860 MHz test circuit.
Fig 3.
2-Tone power gain and third order
intermodulation distortion as function of
load power; typical values
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BLF888
UHF power LDMOS transistor
7.1.2 DVB-T
001aak643
22
Gp
(dB)
20
0
IMDshldr
(dBc)
−10
Gp
001aak644
12
PAR
(dB)
10
70
ηD
(%)
50
ηD
18
−20
8
16
−30
6
10
14
−40
4
−10
12
−50
2
−30
−60
300
350
PL (W)
0
30
PAR
IMDshldr
10
0
50
100
150
200
250
0
VDS = 50 V; IDq = 1.3 A; measured in a common source
narrowband 860 MHz test circuit.
Fig 4.
DVB-T power gain and intermodulation
distortion shoulder as function of load power;
typical values
50
100
150
200
250
−50
300
350
PL (W)
VDS = 50 V; IDq = 1.3 A; measured in a common source
narrowband 860 MHz test circuit.
Fig 5.
DVB-T peak-to-average ratio and drain
efficiency as function of load power;
typical values
7.2 Broadband RF figures
7.2.1 2-Tone
Gp
(dB)
001aak645
24
22
60
55
ηD
(%)
Gp
(dB)
001aak646
24
22
−15
Gp
Gp
−10
50
20
−20
18
45
18
−25
16
40
16
−30
14
35
14
20
ηD
IMD3
(dBc)
−35
IMD3
12
30
12
−40
10
25
10
−45
8
400
500
600
700
20
800
900
f (MHz)
8
400
2-Tone power gain and drain efficiency as
function of frequency; typical values
BLF888#6
Product data sheet
600
700
−50
800
900
f (MHz)
PL(AV) = 250 W; VDS = 50 V; IDq = 1.3 A; measured in a
common source broadband test circuit as described in
Section 8.
PL(AV) = 250 W; VDS = 50 V; IDq = 1.3 A; measured in a
common source broadband test circuit as described in
Section 8.
Fig 6.
500
Fig 7.
2-Tone power gain and third order
intermodulation distortion as function of
frequency; typical values
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Rev. 6 — 1 September 2015
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BLF888
UHF power LDMOS transistor
7.2.2 DVB-T
001aak647
9.5
ηD
(%)
PAR
(dB)
001aak648
22
50
Gp
Gp
(dB)
IMDshldr
(dB)
PAR
8.5
40
18
30
14
−10
−20
ηD
7.5
−30
IMDshldr
6.5
5.5
400
500
600
700
10
800
900
f (MHz)
6
400
500
600
700
−50
800
900
f (MHz)
PL(AV) = 110 W; VDS = 50 V; IDq = 1.3 A; measured in a
common source broadband test circuit as described in
Section 8.
PL(AV) = 110 W; VDS = 50 V; IDq = 1.3 A; measured in a
common source broadband test circuit as described in
Section 8.
Fig 8.
−40
10
20
DVB-T peak-to-average ratio and drain
efficiency as function of frequency;
typical values
Fig 9.
DVB-T power gain and intermodulation
distortion shoulder as a function of frequency;
typical values
7.3 Impedance information
ZL
drain
Zi
gate
001aai086
Fig 10. Definition of transistor impedance
Table 8.
Typical push-pull impedance
Simulated Zi and ZL device impedance; impedance info at VDS = 50 V and PL(PEP) = 600 W (DVB-T).
BLF888#6
Product data sheet
f
Zi
ZL
MHz


300
1.018  j1.350
5.565 + j0.747
325
1.045  j1.022
5.435 + j0.752
350
1.076  j0.722
5.303 + j0.746
375
1.110  j0.444
5.167 + j0.730
400
1.148  j0.183
5.030 + j0.704
425
1.190 + j0.064
4.892 + j0.668
450
1.238 + j0.299
4.754 + j0.622
475
1.291 + j0.526
4.617 + j0.567
500
1.351 + j0.746
4.481 + j0.504
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BLF888
UHF power LDMOS transistor
Table 8.
Typical push-pull impedance …continued
Simulated Zi and ZL device impedance; impedance info at VDS = 50 V and PL(PEP) = 600 W (DVB-T).
BLF888#6
Product data sheet
f
Zi
ZL
MHz


525
1.417 + j0.961
4.346 + j0.432
550
1.492 + j1.171
4.214 + j0.353
575
1.577 + j1.378
4.084 + j0.266
600
1.672 + j1.582
3.958 + j0.173
625
1.779 + j1.783
3.834 + j0.074
650
1.901 + j1.983
3.713  j0.031
675
2.039 + j2.180
3.596  j0.142
700
2.196 + j2.373
3.482  j0.257
725
2.376 + j2.563
3.372  j0.377
750
2.581 + j2.745
3.266  j0.501
775
2.817 + j2.918
3.163  j0.628
800
3.087 + j3.076
3.064  j0.759
825
3.395 + j3.212
2.968  j0.893
850
3.746 + j3.317
2.876  j1.030
875
4.142 + j3.377
2.787  j1.170
900
4.583 + j3.374
2.701  j1.312
925
5.063 + j3.288
2.619  j1.455
950
5.566 + j3.094
2.540  j1.601
975
6.064 + j2.770
2.464  j1.749
1000
6.514 + j2.299
2.391  j1.898
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Rev. 6 — 1 September 2015
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8 of 17
BLF888
UHF power LDMOS transistor
7.4 Reliability
001aak649
106
Years
(1)
(2)
(3)
(4)
(5)
(6)
105
104
103
102
(7)
(8)
(9)
(10)
(11)
10
1
0
4
8
12
16
20
24
IDS(DC) (A)
TTF (0.1 % failure fraction).
The reliability at pulsed conditions can be calculated as follows: TTF (0.1 %)  1 / .
(1) Tj = 100 C
(2) Tj = 110 C
(3) Tj = 120 C
(4) Tj = 130 C
(5) Tj = 140 C
(6) Tj = 150 C
(7) Tj = 160 C
(8) Tj = 170 C
(9) Tj = 180 C
(10) Tj = 190 C
(11) Tj = 200 C
Fig 11. BLF888 electromigration (IDS(DC), total device)
8. Test information
Table 9.
List of components
For test circuit, see Figure 12, Figure 13 and Figure 14.
Component
Description
Value
B1, B2
semi rigid coax
25 ; 49.5 mm
Remarks
EZ90-25-TP
C1
multilayer ceramic chip capacitor
12 pF
[1]
C2, C9, C10
multilayer ceramic chip capacitor
10 pF
[1]
C3
multilayer ceramic chip capacitor
4.7 pF
[2]
C4, C5, C6
multilayer ceramic chip capacitor
8.2 pF
[1]
C7
multilayer ceramic chip capacitor
5.6 pF
[2]
C8, C13, C14
multilayer ceramic chip capacitor
100 pF
[1]
C11, C12
multilayer ceramic chip capacitor
2.0 pF
[2]
BLF888#6
Product data sheet
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Rev. 6 — 1 September 2015
© Ampleon The Netherlands B.V. 2015. All rights reserved.
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BLF888
UHF power LDMOS transistor
Table 9.
List of components …continued
For test circuit, see Figure 12, Figure 13 and Figure 14.
Component
Description
Value
Remarks
C15, C16
multilayer ceramic chip capacitor
4.7 F, 50 V
TDK C4532X7R1E475MT020U or
capacitor of same quality.
C17, C18
multilayer ceramic chip capacitor
100 pF
C19, C20
multilayer ceramic chip capacitor
10 F, 50 V
C21, C22
electrolytic capacitor
470 F; 63 V
C30, C31
multilayer ceramic chip capacitor
10 pF
[3]
C32
multilayer ceramic chip capacitor
5.6 pF
[3]
C33, C34, C35
multilayer ceramic chip capacitor
100 pF
[3]
C36, C37
multilayer ceramic chip capacitor
4.7 F
L1
microstrip
-
[4]
(W  L) 15 mm  13 mm
-
[4]
(W  L) 5 mm  26 mm
(W  L) 2 mm  49.5 mm
L2
microstrip
[2]
TDK C570X7R1H106KT000N or
capacitor of same quality.
TDK C4532X7R1E475MT020U or
capacitor of same quality.
L3, L32
microstrip
-
[4]
L4
microstrip
-
[4]
(W  L) 1.7 mm 3.5 mm
L5
microstrip
-
[4]
(W  L) 2 mm  9.5 mm
-
[4]
(W  L) 5 mm  13 mm
(W  L) 2 mm  11 mm
(W  L) 2 mm  3 mm
L30
microstrip
L31
microstrip
-
[4]
L33
microstrip
-
[4]
R1, R2
resistor
10 
R3, R4
resistor
5.6 
R5, R6
resistor
100 
R7, R8
potentiometer
1 k
[1]
American technical ceramics type 180R or capacitor of same quality.
[2]
American technical ceramics type 100B or capacitor of same quality.
[3]
American technical ceramics type 100A or capacitor of same quality.
[4]
Printed-Circuit Board (PCB): Taconic RF35; r = 3.5 F/m; height = 0.76 mm; Cu (top/bottom metallization);
thickness copper plating = 35 m.
BLF888#6
Product data sheet
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Rev. 6 — 1 September 2015
© Ampleon The Netherlands B.V. 2015. All rights reserved.
10 of 17
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BLF888#6
Product data sheet
+VG1(test)
R7
C19
R1
C17
+VD1(test)
R5
C36
L5
R3
C21
L30
C34
50 Ω
C33
L31
L33
C11
L1
L32
C5
C3
C1
C9
C13
C7 L2
B2
C15
L4
C8
50 Ω
B1
C32 C31
Rev. 6 — 1 September 2015
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R4
L3
C30
C2
C4
C35
C6
C12
C10
C14
C16
C22
C37
R6
+VD2(test)
C18
R2
C20
R8
001aak650
+VG2(test)
See Table 9 for a list of components.
Fig 12. Class-AB common-source broadband amplifier; VD1(test), VD2(test), VG1(test) and VG2(test) are drain and gate test voltages
BLF888
UHF power LDMOS transistor
11 of 17
© Ampleon The Netherlands B.V. 2015. All rights reserved.
BLF888
UHF power LDMOS transistor
L3
L32
L5
L30
50
mm
L1
L2
L31
L33
L4
L31
L2
L30
L1
L5
L32
L3
105 mm
001aak651
See Table 9 for a list of components.
Fig 13. Printed-Circuit Board (PCB) for class-AB common source amplifier
+VG1(test)
+VD1(test)
+
C17
R7
R5
C36
R1
−
C21
C19
C34
C33
50 Ω
C11
9 mm
R3
C30
C32
C1
C3
C31
C35
C9
C5 C6
C2
C4
19.5 mm
2 mm
R4
C13
C7
C12
C10
31.5 mm
C14
C15
C8
50
Ω
C16
C21
C20
C37
−
R6
R8
C18
C22
R2
+
+VG2(test)
6.5
mm
+VD2(test)
001aak652
See Table 9 for a list of components.
Fig 14. Component layout for class-AB common source amplifier
BLF888#6
Product data sheet
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Rev. 6 — 1 September 2015
© Ampleon The Netherlands B.V. 2015. All rights reserved.
12 of 17
BLF888
UHF power LDMOS transistor
9. Package outline
Flanged LDMOST ceramic package; 2 mounting holes; 4 leads
SOT979A
D
A
F
D1
U1
B
q
C
H1
1
H
2
w2
C
w1
A
c
B
p
U2
E
E1
5
L
3
4
A
w3
b
Q
e
w3
0.25
0
5
10 mm
scale
0.010
Dimensions
Unit(1)
mm
A
b
c
D
D1
E
E1
e
F
H
H1
L
max 5.77 11.81 0.15 31.55 31.37 10.29 10.29
1.969 17.50 25.53 3.86
nom
13.72
min 4.80 11.56 0.10 30.94 31.12 10.03 10.03
1.689 17.25 25.27 3.35
p
Q
3.30
3.02
q
3.05
2.77
U1
U2
w1
w2
0.25
0.51
41.28 10.29
35.56
41.02 10.03
max 0.227 0.465 0.006 1.242 1.235 0.405 0.405
0.078 0.689 1.005 0.152 0.130 0.119
1.625 0.405
0.540
1.400
0.010 0.020
inches nom
min 0.189 0.455 0.004 1.218 1.225 0.395 0.395
0.067 0.679 0.995 0.132 0.120 0.109
1.615 0.395
Note
1. millimeter dimensions are derived from the original inch dimensions.
Outline
version
References
IEC
JEDEC
JEITA
sot979a_po
European
projection
Issue date
08-04-24
08-09-04
SOT979A
Fig 15. Package outline SOT979A
BLF888#6
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 6 — 1 September 2015
© Ampleon The Netherlands B.V. 2015. All rights reserved.
13 of 17
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10. Abbreviations
Table 10.
Abbreviations
Acronym
Description
CCDF
Complementary Cumulative Distribution Function
DVB
Digital Video Broadcast
DVB-T
Digital Video Broadcast - Terrestrial
LDMOS
Laterally Diffused Metal-Oxide Semiconductor
LDMOST
Laterally Diffused Metal-Oxide Semiconductor Transistor
OFDM
Orthogonal Frequency Division Multiplexing
PAR
Peak-to-Average power Ratio
RF
Radio Frequency
TTF
Time To Failure
UHF
Ultra High Frequency
VSWR
Voltage Standing-Wave Ratio
11. Revision history
Table 11.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BLF888#6
20150901
Product data sheet
-
BLF888 v.5
Modifications:
•
The format of this document has been redesigned to comply with the new identity guidelines
of Ampleon.
•
Legal texts have been adapted to the new company name where appropriate.
BLF888 v.5
20110121
Product data sheet
-
BLF888 v.4
BLF888 v.4
20100429
Product data sheet
-
BLF888 v.3
BLF888 v.3
20100211
Product data sheet
-
BLF888 v.2
BLF888 v.2
20091022
Preliminary data sheet
-
BLF888 v.1
BLF888 v.1
20081216
Objective data sheet
-
-
BLF888#6
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 6 — 1 September 2015
© Ampleon The Netherlands B.V. 2015. All rights reserved.
14 of 17
BLF888
UHF power LDMOS transistor
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
Definition
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.ampleon.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Ampleon does not give any representations or
warranties as to the accuracy or completeness of information included herein
and shall have no liability for the consequences of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local Ampleon sales office. In
case of any inconsistency or conflict with the short data sheet, the full data
sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Ampleon and its customer, unless Ampleon and customer have explicitly
agreed otherwise in writing. In no event however, shall an agreement be valid
in which the Ampleon product is deemed to offer functions and qualities
beyond those described in the Product data sheet.
12.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, Ampleon does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. Ampleon takes no responsibility for
the content in this document if provided by an information source outside of
Ampleon.
In no event shall Ampleon be liable for any indirect, incidental, punitive,
special or consequential damages (including - without limitation - lost profits,
lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, Ampleon’ aggregate and cumulative liability towards customer
for the products described herein shall be limited in accordance with the
Terms and conditions of commercial sale of Ampleon.
Right to make changes — Ampleon reserves the right to make changes to
information published in this document, including without limitation
specifications and product descriptions, at any time and without notice. This
document supersedes and replaces all information supplied prior to the
publication hereof.
Suitability for use — Ampleon products are not designed, authorized or
warranted to be suitable for use in life support, life-critical or safety-critical
systems or equipment, nor in applications where failure or malfunction of an
BLF888#6
Product data sheet
Ampleon product can reasonably be expected to result in personal injury,
death or severe property or environmental damage. Ampleon and its
suppliers accept no liability for inclusion and/or use of Ampleon products in
such equipment or applications and therefore such inclusion and/or use is at
the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Ampleon makes no representation
or warranty that such applications will be suitable for the specified use without
further testing or modification.
Customers are responsible for the design and operation of their applications
and products using Ampleon products, and Ampleon accepts no liability for
any assistance with applications or customer product design. It is customer’s
sole responsibility to determine whether the Ampleon product is suitable and
fit for the customer’s applications and products planned, as well as for the
planned application and use of customer’s third party customer(s). Customers
should provide appropriate design and operating safeguards to minimize the
risks associated with their applications and products.
Ampleon does not accept any liability related to any default, damage, costs or
problem which is based on any weakness or default in the customer’s
applications or products, or the application or use by customer’s third party
customer(s). Customer is responsible for doing all necessary testing for the
customer’s applications and products using Ampleon products in order to
avoid a default of the applications and the products or of the application or
use by customer’s third party customer(s). Ampleon does not accept any
liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — Ampleon products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.ampleon.com/terms, unless otherwise agreed in a valid written
individual agreement. In case an individual agreement is concluded only the
terms and conditions of the respective agreement shall apply. Ampleon
hereby expressly objects to applying the customer’s general terms and
conditions with regard to the purchase of Ampleon products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
All information provided in this document is subject to legal disclaimers.
Rev. 6 — 1 September 2015
© Ampleon The Netherlands B.V. 2015. All rights reserved.
15 of 17
BLF888
UHF power LDMOS transistor
Non-automotive qualified products — Unless this data sheet expressly
states that this specific Ampleon product is automotive qualified, the product
is not suitable for automotive use. It is neither qualified nor tested in
accordance with automotive testing or application requirements. Ampleon
accepts no liability for inclusion and/or use of non-automotive qualified
products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without Ampleon’ warranty of the product for such
automotive applications, use and specifications, and (b) whenever customer
uses the product for automotive applications beyond Ampleon’ specifications
such use shall be solely at customer’s own risk, and (c) customer fully
indemnifies Ampleon for any liability, damages or failed product claims
resulting from customer design and use of the product for automotive
applications beyond Ampleon’ standard warranty and Ampleon’ product
specifications.
12.5 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Any reference or use of any ‘NXP’ trademark in this document or in or on the
surface of Ampleon products does not result in any claim, liability or
entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of
the NXP group of companies and any reference to or use of the ‘NXP’
trademarks will be replaced by reference to or use of Ampleon’s own Any
reference or use of any ‘NXP’ trademark in this document or in or on the
surface of Ampleon products does not result in any claim, liability or
entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of
the NXP group of companies and any reference to or use of the ‘NXP’
trademarks will be replaced by reference to or use of Ampleon’s own
trademarks.
12.4 Licenses
ICs with DVB-T or DVB-T2 functionality
Use of this product in any manner that complies with the DVB-T or the
DVB-T2 standard may require licenses under applicable patents of the
DVB-T respectively the DVB-T2 patent portfolio, which license is available
from Sisvel S.p.A., Via Sestriere 100, 10060 None (TO), Italy, and under
applicable patents of other parties.
13. Contact information
For more information, please visit:
http://www.ampleon.com
BLF888#6
Product data sheet
For sales office addresses, please visit:
http://www.ampleon.com/sales
All information provided in this document is subject to legal disclaimers.
Rev. 6 — 1 September 2015
© Ampleon The Netherlands B.V. 2015. All rights reserved.
16 of 17
BLF888
UHF power LDMOS transistor
14. Contents
1
1.1
1.2
1.3
2
3
4
5
6
6.1
7
7.1
7.1.1
7.1.2
7.2
7.2.1
7.2.2
7.3
7.4
8
9
10
11
12
12.1
12.2
12.3
12.4
12.5
13
14
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 3
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Ruggedness in class-AB operation . . . . . . . . . 4
Application information. . . . . . . . . . . . . . . . . . . 5
Narrowband RF figures . . . . . . . . . . . . . . . . . . 5
2-Tone. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
DVB-T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Broadband RF figures . . . . . . . . . . . . . . . . . . . 6
2-Tone. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
DVB-T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Impedance information . . . . . . . . . . . . . . . . . . . 7
Reliability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 9
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 13
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 14
Legal information. . . . . . . . . . . . . . . . . . . . . . . 15
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 15
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Licenses . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Contact information. . . . . . . . . . . . . . . . . . . . . 16
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© Ampleon The Netherlands B.V. 2015.
All rights reserved.
For more information, please visit: http://www.ampleon.com
For sales office addresses, please visit: http://www.ampleon.com/sales
Date of release: 1 September 2015
Document identifier: BLF888#6
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