DS5003

DS5003
4/1/2008
PRODUCT RELIABILITY REPORT
FOR
DS5003, Rev A1
Maxim Integrated Products
4401 South Beltwood Parkway
Dallas, TX 75244-3292
Prepared by:
Don Lipps
Staff Reliability Engineer
MAXIM Integrated Products
4401 South Beltwood Pkwy.
Dallas, TX 75244-3292
Email: don.lipps@maxim-ic.com
ph: 972-371-3739
fax: 972-371-6016
Conclusion:
The following qualification successfully meets the quality and reliability standards required of all Dallas
Semiconductor products:
DS5003, Rev A1
In addition, Dallas Semiconductor's continuous reliability monitor program ensures that all outgoing
product will continue to meet Maxim's quality and reliability standards. The current status of the
reliability monitor program can be viewed at http://www.maxim-ic.com/TechSupport /dsreliability.html.
Device Description:
A description of this device can be found in the product data sheet. You can find the product data
sheet at http://dbserv.maxim-ic.com/l_datasheet3.cfm.
Reliability Derating:
The Arrhenius model will be used to determine the acceleration factor for failure mechanisms that
are temperature accelerated.
AfT = exp((Ea/k)*(1/Tu - 1/Ts)) = tu/ts
AfT = Acceleration factor due to Temperature
tu = Time at use temperature (e.g. 55°C)
ts = Time at stress temperature (e.g. 125°C)
k = Boltzmann’s Constant (8.617 x 10-5 eV/°K)
Tu = Temperature at Use (°K)
Ts = Temperature at Stress (°K)
Ea = Activation Energy (e.g. 0.7 ev)
The activation energy of the failure mechanism is derived from either internal studies or industry
accepted standards, or activation energy of 0.7ev will be used whenever actual failure mechanisms
or their activation energies are unknown. All deratings will be done from the stress ambient
temperature to the use ambient temperature.
An exponential model will be used to determine the acceleration factor for failure mechanisms, which
are voltage accelerated.
AfV = exp(B*(Vs - Vu))
AfV = Acceleration factor due to Voltage
Vs = Stress Voltage (e.g. 7.0 volts)
Vu = Maximum Operating Voltage (e.g. 5.5 volts)
B = Constant related to failure mechanism type (e.g. 1.0, 2.4, 2.7, etc.)
The Constant, B, related to the failure mechanism is derived from either internal studies or industry
accepted standards, or a B of 1.0 will be used whenever actual failure mechanisms or their B are
unknown. All deratings will be done from the stress voltage to the maximum operating voltage.
Failure rate data from the operating life test is reported using a Chi-Squared statistical model at the
60% or 90% confidence level (Cf).
The failure rate, Fr, is related to the acceleration during life test by:
Fr = X/(ts * AfV * AfT * N * 2)
X = Chi-Sq statistical upper limit
N = Life test sample size
Failure Rates are reported in FITs (Failures in Time) or MTTF (Mean Time To Failure). The FIT rate
is related to MTTF by:
MTTF = 1/Fr
NOTE: MTTF is frequently used interchangeably with MTBF.
The calculated failure rate for this device/process is:
FAILURE RATE:
MTTF (YRS):
10785
FITS:
10.6
DEVICE HOURS:
91784
FAILS:
0
Only data from Operating Life or similar stresses are used for this calculation.
The parameters used to calculate this failure rate are as follows:
Cf: 60%
Ea: 0.7
B: 0
Tu: 25
°C
Vu: 5.5
Volts
The reliability data follows. At the start of this data is the device information. The next section is the
detailed reliability data for each stress. The reliability data section includes the latest data available
and may contain some generic data. "*" after DATE CODE denotes specific product data.
Device Information:
Process:
Passivation:
Die Size:
Number of Transistors:
Interconnect:
Gate Oxide Thickness:
E6RB-1P2M,SILP1,LLVt,N+ESD,NDROM,BC ALOCOS:GOI
Passivation w/Nov TEOS Oxide-Nitride
185 x 170
92806
Aluminum / 0.5% Copper
150 Å
ELECTRICAL CHARACTERIZATION
DESCRIPTION
DATE CODE CONDITION
READPOINT
QTY FAILS
ESD SENSITIVITY
0805
*
EOS/ESD S5.1 HBM 500 VOLTS
1
PUL'S
3
0
ESD SENSITIVITY
0805
*
EOS/ESD S5.1 HBM 1000 VOLTS
1
PUL'S
3
0
ESD SENSITIVITY
0805
*
EOS/ESD S5.1 HBM 2000 VOLTS
1
PUL'S
3
0
ESD SENSITIVITY
0805
*
EOS/ESD S5.1 HBM 4000 VOLTS
1
PUL'S
3
0
ESD SENSITIVITY
0805
*
EOS/ESD S5.1 HBM 8000 VOLTS
1
PUL'S
3
3
LATCH-UP
0805
*
JESD78, V-SUPPLY TEST 125C
6
0
LATCH-UP
0805
*
JESD78, I-TEST 125C
6
0
FA#
No FA
3
Total:
OPERATING LIFE
DESCRIPTION
DATE CODE CONDITION
READPOINT
HIGH TEMP OP LIFE
0705
125C, 5.5 VOLTS
1000 HRS
77
0
HIGH TEMP OP LIFE
0805
125C, 5.5 VOLTS
192
77
0
*
HRS
Total:
FAILURE RATE:
MTTF (YRS):
10785
FITS:
10.6
DEVICE HOURS:
91784
FAILS:
0
QTY FAILS
0
FA#
Was this manual useful for you? yes no
Thank you for your participation!

* Your assessment is very important for improving the work of artificial intelligence, which forms the content of this project

Download PDF

advertising