6MBP150VDN060-50

6MBP150VDN060-50
http://www.fujielectric.com/products/semiconductor/
6MBP150VDN060-50
IGBT Modules
IGBT MODULE (V series)
600V / 150A / IPM
Features
• Temperature protection provided by directly detecting
the junction temperature of the IGBTs
• Low power loss and soft switching
• High performance and high reliability IGBT with overheating
protection
• Higher reliability because of a big decrease in number of
parts in built-in control circuit
Maximum Ratings and Characteristics
Absolute Maximum Ratings (TC =25ºC, VCC =15V unless otherwise specified)
Symbol
Min.
Max.
Units
Collector-Emitter Voltage (*1)
Short Circuit Voltage
VCES
VSC
IC
Icp
-IC
PC
IC
Icp
IF
PC
VCC
Vin
VALM
IALM
Tj
Topr
Tstg
Tsol
Viso
0
200
-0.5
-0.5
-0.5
-20
-40
-
600
400
150
300
150
543
20
VCC+0.5
VCC
20
150
110
125
260
AC2500
V
V
A
A
A
W
A
A
A
W
V
V
V
mA
ºC
ºC
ºC
ºC
Vrms
-
1.7
Nm
Brake
Inverter
Items
Collector Current
Collector Power Dissipation
Collector Current
DC
1ms
Duty=87.7% (*2)
1 device (*3)
DC
1ms
Forward Current of Diode
Collector Power Dissipation 1 device (*3)
Supply Voltage of Pre-Driver (*4)
Input Signal Voltage (*5)
Alarm Signal Voltage (*6)
Alarm Signal Current (*7)
Junction Temperature
Operating Case Temperature
Storage Temperature
Solder Temperature (*8)
Isolating Voltage (*9)
Terminal (M4)
Screw Torque
Mounting (M4)
-
Note *1: VCES shall be applied to the input voltage between terminal P-(U,V, W, B) and (U,V, W, B)-N.
Note *2: Duty=125ºC/Rth(j-c)D /(I F×VF Max.)×100
Note *3: PC=125ºC/Rth(j-c)Q (Inverter & Brake)
Note *4: VCC shall be applied to the input voltage between terminal No.4 and 1, 8 and 5, 12 and 9, 14 and 13.
Note *5: Vin shall be applied to the input voltage between terminal No.3 and 1, 7 and 5, 11 and 9, 15~18 and 13.
Note *6: VALM shall be applied to the voltage between terminal No.2 and 1, 6 and 5, 10 and 9, 19 and 13.
Note *7: I ALM shall be applied to the input current to terminal No.2,6,10 and 19.
Note *8: Immersion time 10±1sec. 1time.
Note *9: Terminal to base, 50/60Hz sine wave 1min. All terminals should be connected together during the test.
1
1554
APRIL 2014
6MBP150VDN060-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Electrical Characteristics (Tj =25ºC, VCC =15V unless otherwise specified)
Items
Brake
Inverter
Collector Current at off signal input
Symbol
Conditions
ICES
VCE=600V
Terminal
Chip
Terminal
Chip
Collector-Emitter saturation voltage
VCE(sat)
IC =150A
Forward voltage of FWD
VF
IF=150A
Collector Current at off signal input
ICES
VCE=-V
Collector-Emitter saturation voltage
VCE(sat)
IC =-A
Forward voltage of FWD
VF
IF=-A
ton
toff
VDC =300V, Tj =125ºC,
IC =150A
trr
VDC =300V
IF=150A
Switching time
Supply current of P-side pre-driver (per one unit)
Supply current of N-side pre-driver
Input signal threshold voltage
Inverter
Brake
Over Current Protection Delay time
Short Circuit Protection Delay time
IGBT Chips Over Heating Protection Temperature Level
Over Heating Protection Hysteresis
Under Voltage Protection Level
Under Voltage Protection Hysteresis
Over Current Protection
Level
Alarm Signal Hold Time
Resistance for current limit
Terminal
Chip
Terminal
Chip
Iccp
Iccn
Vinth(on)
Vinth(off)
Switching Frequency= 0-15kHz
TC =-20~110ºC
IOC
Tj =125ºC
tdOC
tSC
TjOH
TjH
VUV
VH
tALM(OC)
tALM(UV)
tALM(TjOH)
RALM
Tj =125ºC
Tj =125ºC
Surface of IGBT Chips
Vin-GND
ALM-GND
TC =-20~110ºC
ON
OFF
VCC
10V
Min.
Typ.
Max.
Units
1.1
-
1.40
1.80
-
1.0
2.15
2.50
2.1
mA
V
V
V
V
mA
V
V
V
V
µs
µs
-
-
0.3
µs
1.2
1.5
225
150
11.0
0.2
1.0
2.5
5.0
960
1.4
1.7
5
2
20
0.5
2.0
4.0
8.0
1265
21
64
1.6
1.9
3
12.5
2.4
4.9
11.0
1570
mA
mA
V
V
A
A
µs
µs
ºC
ºC
V
V
ms
ms
ms
Ω
Thermal Characteristics (TC = 25ºC)
Items
Inverter
Junction to Case Thermal Resistance (*10)
Brake
Symbol
Rth(j-c)Q
Rth(j-c)D
Rth(j-c)Q
Rth(j-c)D
Rth(c-f)
IGBT
FWD
IGBT
FWD
Case to Fin Thermal Resistance with Compound
Min.
-
Typ.
0.05
Max.
0.23
0.38
-
Units
°C/W
°C/W
°C/W
°C/W
°C/W
Note *10: For 1device, the measurement point of the case is just under the chip.
Noise Immunity (VDC =300V, VCC =15V)
Items
Conditions
Min.
Typ.
Max.
Units
Common mode rectangular noise
Pulse width 1μs, polarity ±, 10 min.
Judge : no over-current, no miss operating
±2.0
-
-
kV
Recommended Operating Conditions
Items
DC Bus Voltage
Power Supply Voltage of Pre-Driver
Switching frequency of IPM
Arm shoot through blocking time for IPM's input signal
Screw Torque (M4)
Symbol
VDC
VCC
fSW
tdead
-
Min.
13.5
1.0
1.3
Typ.
15.0
-
Max.
400
16.5
20
1.7
Units
V
V
kHz
µs
Nm
Symbol
Wt
Min.
-
Typ.
290
Max.
-
Units
g
Weight
Items
Weight
2
6MBP150VDN060-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Block Diagram
P
VccU ④
VinU ③
ALMU ②
Pre-Driver
RALM
U
GNDU ①
VccV ⑧
VinV ⑦
ALM V ⑥
Pre-Driver
RALM
V
GNDV ⑤
VccW ⑫
VinW ⑪
ALM W ⑩
Pre-Driver
RALM
W
GNDW ⑨
Vcc ⑭
VinX ⑯
Pre-Driver
GND ⑬
VinY ⑰
Pre-Driver
VinZ ⑱
Pre-Driver
⑮
ALM ⑲
N
RALM
Pre-drivers include following functions
1. Amplifier for driver
2. Short circuit protection
3. Under voltage lockout circuit
4. Over current protection
5. IGBT chip over heating protection
3
6MBP150VDN060-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Characteristics (Representative)
Power supply current vs. Switching frequency
Tj=25ºC (typ.)
120
100
80
Vcc=17V
Vcc=15V
Vcc=13V
60
40
Vcc=17V
Vcc=15V
Vcc=13V
20
0
0
5
10
15
20
0.5
12
13
14
15
16
17
Power supply voltage : Vcc [V]
Under voltage vs. Junction temperature (typ.)
Under voltage hysterisis
vs. Junction temperature (typ.)
12
0.8
9
6
3
20
40
60
80
100
120
0.4
0.2
0
140
18
0.6
0
50
100
150
Junction temperature : Tj [ºC]
Junction temperature : Tj [ºC]
Alarm hold time vs. Power supply voltage (typ.)
Over heating characteristics
TjOH,TjH vs. VCC (typ.)
200
TjOH
Over heating protection : TjOH [℃]
OH hysterisis : TjH [℃]
tALM(TjOH)
8
6
4
tALM(OC)
2
0
Vinth(on)
1
1
0
Vinth(off)
1.5
Switchig frequency : fsw [kHz]
10
Alarm hold time : tALM [ msec ]
2
15
0
TC=25~125℃
2.5
0
25
Under voltage hysterisis : VH [V]
Under voltage : VUV [ V ]
3
N-side
P-side
Input signal threshold voltage :
Vinth(on),Vinth(off) [ V ]
Power supply current : ICC [ mA ]
140
Input signal threshold voltage
vs. Power supply voltage (typ.)
12
13
14
15
16
17
150
100
50
TjH
0
18
12
13
14
15
16
Power supply voltage : Vcc [V]
Power supply voltage : Vcc [V]
4
17
18
6MBP150VDN060-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Inverter
Collector current vs. Collector-Emitter voltage
Tj=25 ℃ [Chip] (typ.)
Collector current vs. Collector-Emitter voltage
Tj=25 ℃ [Terminal] (typ.)
300
300
250
VCC=15V
VCC=13V
VCC=17V
200
Collector current : IC [ A ]
Collector current : IC [ A ]
250
150
100
50
0
VCC=15V
VCC=17V
200
150
100
50
0
0.5
1
1.5
2
2.5
3
0
3.5
0
0.5
Collector-Emitter voltage : VCE [ V ]
VCC=17V
VCC=13V
150
100
0
0.5
1
1.5
2
2.5
3
3
3.5
VCC=15V
200
VCC=17V
VCC=13V
150
100
0
3.5
0
0.5
1
1.5
2
2.5
Collector-Emitter voltage : VCE [ V ]
Collector-Emitter voltage : VCE [ V ]
Forward current vs. Forward voltage
[Chip] (typ.)
Forward current vs. Forward voltage
[Terminal] (typ.)
300
300
250
250
Forward current : IF [ A ]
Forward current : IF [ A ]
2.5
50
50
200
Tj=125 ℃
150
Tj=25 ℃
100
3
3.5
3
3.5
200
Tj=125 ℃
Tj=25 ℃
150
100
50
50
0
2
250
VCC=15V
200
1.5
Collector current vs. Collector-Emitter voltage
Tj=125 ℃ [Terminal] (typ.)
300
Collector current : IC [ A ]
Collector current : IC [ A ]
250
1
Collector-Emitter voltage : VCE [ V ]
Collector current vs. Collector-Emitter voltage
Tj=125 ℃ [Chip] (typ.)
300
0
VCC=13V
0
0.5
1
1.5
2
2.5
3
0
3.5
Forward voltage : VF [ V ]
0
0.5
1
1.5
2
2.5
Forward voltage : VF [ V ]
5
6MBP150VDN060-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Switching Loss vs. Collector Current (typ.)
VDC=300V,VCC=15V,Tj=25℃
Switching Loss vs. Collector Current (typ.)
VDC=300V,VCC=15V,Tj=125℃
20
Switching loss :Eon,Eoff,Err [mJ/cycle]
Switching loss :Eon,Eoff,Err [mJ/cycle]
20
15
Eon
10
Eoff
5
Err
0
0
50
100
150
200
15
Eon
10
Eoff
5
Err
0
250
0
50
150
200
250
Collector current : IC [ A ]
Collector current : IC [ A ]
Transient thermal resistance (max.)
Reversed biased safe operating area
V cc=15V,T j≦125℃
600
100
10
400
300
200
RBSOA
(Repetitive pulse)
100
0
0
200
400
600
1
FWD
0.1
1
Pulse width : PW [ sec ]
Power derating for IGBT (max.)
[per device]
Power derating for FWD (max.)
[per device]
600
500
500
400
300
200
100
0
0.01
Collector-Emitter voltage : VCE [ V ]
600
0
IGBT
0.1
0.01
0.001
800
Collector Power Dissipation : PC [ W ]
Collector Power Dissipation : PC [ W ]
Thermal resistance : Rth(j-c) [ ℃/W ]
Collector current : IC [ A ]
500
20
40
60
80
400
300
200
100
0
100 120 140 160
0
20
40
60
80
100 120 140 160
Case Temperature : TC [ ℃ ]
Case Temperature : TC [ ℃ ]
6
10
6MBP150VDN060-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Switching time vs. Collector current (typ.)
VDC=300V, Vcc=15V, Tj=25ºC
10000
10000
t on
Switching time : ton,toff,tf [ nsec ]
Switching time : ton,toff,tf [ nsec ]
t on
t off
1000
100
tf
0
50
100
150
Collector current : IC [ A ]
200
Reverse recovery current :Irr [ A ]
Reverse recovery time : trr [ nsec ]
t rr Tj=25℃
Irr Tj=25℃
10
0
50
100
150
200
0
50
100
150
200
250
Over current protection
vs. Junction temperature (typ.) VCC=15V
500
Irr Tj=125℃
1
tf
Collector current : Ic [A]
t rr Tj=125℃
100
100
10
Reverse recovery characteristics (typ.)
trr,Irr vs. IF
1000
t off
1000
250
Over current protection level : Ioc [A]
10
Switching time vs. Collector current (typ.)
VDC=300V,VCC=15V,Tj=125℃
400
300
200
100
0
250
Forward current : IF [A]
0
20
40
60
80
100
Junction temperature : Tj [ºC]
7
120
140
6MBP150VDN060-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Outline Drawings, mm
Weight: 290g(typ.)
WARNING
1.This Catalog contains the product specifications, characteristics, data, materials, and structures as of April 2014.
The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be
sur to obtain the latest specifications.
2.All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or
implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed)
granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged
infringement of other's intellectual property rights which may arise from the use of the applications described herein.
3.Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become
faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent
the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your
design failsafe, flame retardant, and free of malfunction.
4.The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability
requirements.
• Computers
• OA equipment
• Communications equipment (terminal devices)
• Measurement equipment
• Machine tools
• Audiovisual equipment • Electrical home appliances
• Personal equipment • Industrial robots etc.
5.If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below,
it is imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate
measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment
becomes faulty.
• Transportation equipment (mounted on cars and ships)
• Trunk communications equipment
• Traffic-signal control equipment
• Gas leakage detectors with an auto-shut-off feature
• Emergency equipment for responding to disasters and anti-burglary devices
• Safety devices
• Medical equipment
6.Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment
(without limitation).
• Space equipment
• Aeronautic equipment
• Nuclear control equipment
• Submarine repeater equipment
7.Copyright ©1996-2014 by Fuji Electric Co., Ltd. All rights reserved.
No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Co., Ltd.
8.If you have any question about any portion in this Catalog, ask Fuji Electric Co., Ltd. or its sales agents before using the product.
Neither Fuji Electric Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions
set forth herein.
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