datasheet for AP9408GJ-HF-3TB by Advanced Power Electronics Corp. USA

datasheet for AP9408GJ-HF-3TB by Advanced Power Electronics Corp. USA
Advanced Power
Electronics Corp.
AP9408GH/J-HF-3
N-channel Enhancement-mode Power MOSFET
Low Gate Charge
D
BV DSS
Fast Switching Characteristics
30V
R DS(ON)
RoHS-compliant, Halogen-free
G
10mΩ
ID
57A
S
Description
D (tab)
G
Advanced Power MOSFETs from APEC provide the designer with the best
combination of fast switching, low on-resistance and cost-effectiveness.
D
S
The AP9408GH-HF-3 is in the TO-252 package which is widely preferred for
commercial and industrial surface mount applications such as medium-power
DC/DC converters. The through-hole TO-251 version (AP9408GJ-HF-3) is
available where a small PCB footprint is required.
TO-252 (H)
D (tab)
G
D
TO-251 (J)
S
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
±20
V
ID at TC=25°C
Continuous Drain Current
57
A
ID at TC=100°C
Continuous Drain Current
41
A
228
A
1
IDM
Pulsed Drain Current
PD at TC=25°C
Total Power Dissipation
53.6
W
Linear Derating Factor
0.36
W/°C
TSTG
Storage Temperature Range
-55 to 175
°C
TJ
Operating Junction Temperature Range
-55 to 175
°C
Thermal Data
Symbol
Rthj-c
Parameter
Maximum Thermal Resistance, Junction-case
3
Value
Units
2.8
°C/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)
62.5
°C/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
110
°C/W
Ordering Information
AP9408GH-HF-3TR : in RoHS-compliant halogen-free TO-252 shipped on tape and reel (3000 pcs/reel)
AP9408GJ-HF-3TB : in RoHS-compliant halogen-free TO-251 shipped in tubes (80pcs/tube)
©2009 Advanced Power Electronics Corp. USA
www.a-powerusa.com
200903055-3
1/6
Advanced Power
Electronics Corp.
AP9408GH/J-HF-3
Electrical Specifications at Tj=25°C (unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
30
-
-
V
-
0.02
-
V/°C
VGS=10V, ID=30A
-
-
10
mΩ
VGS=4.5V, ID=20A
-
-
15
mΩ
BVDSS
Drain-Source Breakdown Voltage
∆ BV DSS/∆ Tj
Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=250uA
RDS(ON)
Static Drain-Source On-Resistance
VGS=0V, ID=250uA
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
2.5
V
gfs
Forward Transconductance
VDS=10V, ID=30A
-
40
-
S
IDSS
Drain-Source Leakage Current
VDS=30V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (T j=125 C) VDS=24V, VGS=0V
-
-
250
uA
Gate-Source Leakage
VGS=±20V, VDS=0V
-
-
±100
nA
ID=10A
-
13
21
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=24V
-
2.2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
7
-
nC
VDS=15V
-
8
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=1A
-
6
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω , VGS=10V
-
24
-
ns
tf
Fall Time
RD=15Ω
-
9
-
ns
Ciss
Input Capacitance
VGS=0V
-
860
1380
pF
Coss
Output Capacitance
VDS=25V
-
210
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
150
-
pF
Rg
Gate Resistance
f=1.0MHz
-
2
3
Ω
Min.
Typ.
IS=30A, VGS=0V
-
-
1.2
V
IS=10A, VGS=0V,
-
23
-
ns
dI/dt=100A/µs
-
17
-
nC
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
Max. Units
Notes:
1.Pulse width limited by maximum junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
©2009 Advanced Power Electronics Corp. USA
www.a-powerusa.com
2/6
Advanced Power
Electronics Corp.
AP9408GH/J-HF-3
Typical Electrical Characteristics
100
120
T C =175 C
10V
7 .0V
5.0V
4.5 V
80
80
V G = 3.0 V
60
40
ID , Drain Current (A)
100
ID , Drain Current (A)
o
10V
7.0 V
5.0V
4.5 V
o
T C =25 C
V G =3.0V
60
40
20
20
0
0
0.0
1.0
2.0
3.0
0.0
4.0
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
4.0
6.0
8.0
Fig 2. Typical Output Characteristics
2.0
14
I D =30A
V G =10V
I D =20A
T C =25 o C
1.6
Normalized RDS(ON)
12
RDS(ON) (mΩ )
2.0
V DS , Drain-to-Source Voltage (V)
10
1.2
0.8
8
0.4
6
2
4
6
8
-50
10
0
50
100
150
200
o
V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance vs. Gate Voltage
Fig 4. Normalized On-Resistance
vs. Junction Temperature
1.6
Normalized VGS(th) (V)
30
20
T j =175 o C
IS(A)
T j =25 o C
10
1.2
0.8
0.4
0
0.0
0
0.4
0.8
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
©2009 Advanced Power Electronics Corp. USA
www.a-powerusa.com
1.2
-50
0
50
100
150
200
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage vs.
Junction Temperature
3/6
Advanced Power
Electronics Corp.
AP9408GH/J-HF-3
Typical Electrical Characteristics (cont.)
16
f=1.0MHz
10000
V DS =16V
V DS =20V
V DS =24V
C (pF)
VGS , Gate to Source Voltage (V)
I D =10A
12
8
1000
C iss
4
C oss
C rss
100
0
0
10
20
1
30
5
9
13
17
21
25
29
V DS ,Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
1000
Normalized Thermal Response (Rthjc)
Duty factor = 0.5
100
ID (A)
100us
10
1ms
10ms
100ms
DC
1
o
T C =25 C
Single Pulse
0
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty Factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0.1
1
10
100
0.00001
0.0001
V DS ,Drain-to-Source Voltage (V)
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
120
V DS =5V
VG
100
ID , Drain Current (A)
o
o
T j =25 C
T j =175 C
QG
80
4.5V
QGS
60
QGD
40
20
Charge
Q
0
0
1
2
3
4
5
6
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
©2009 Advanced Power Electronics Corp. USA
www.a-powerusa.com
Fig 12. Gate Charge Waveform
4/6
Advanced Power
Electronics Corp.
AP9408GH/J-HF-3
Package Dimensions: TO-252
D
D1
E2
E3
B1
F1
e
Millimeters
SYMBOLS
E1
MIN
NOM
MAX
A2
1.80
2.30
2.80
A3
0.40
0.50
0.60
B1
0.40
0.70
1.00
D
6.00
6.50
7.00
D1
4.80
5.35
5.90
E3
3.50
4.00
4.50
F
2.20
2.63
3.05
F1
0.50
0.85
1.20
E1
5.10
5.70
6.30
E2
0.50
1.10
1.80
e
--
2.30
--
C
0.35
0.50
0.65
F
e
1. All dimensions are in millimeters.
2. Dimensions do not include mold protrusions.
R : 0.127~0.381
A2
A3
(0.1mm
C
Marking Information:
Laser Marking
Product: AP9408
9408GH
YWWSSS
©2009 Advanced Power Electronics Corp. USA
www.a-powerusa.com
Package code
GH = RoHS-compliant halogen-free TO-252
Date/lot code (YWWSSS)
Y: Last digit of the year
WW: Work week
SSS: Lot code sequence
5/6
Advanced Power
Electronics Corp.
AP9408GH/J-HF-3
Package Dimensions: TO-251
D
Millimeters
A
SYMBOLS
c1
D1
E2
E1
E
A1
B2
F
B1
c
e
MIN
NOM
MAX
A
2.20
2.30
2.40
A1
0.90
1.20
1.50
B1
0.40
0.60
0.80
B2
0.60
0.85
1.05
c
c1
0.40
0.50
0.60
0.40
0.50
0.60
D
6.40
6.60
6.80
D1
4.80
5.20
5.50
E
6.70
7.00
7.30
E1
5.40
5.60
5.80
E2
1.30
1.50
1.70
e
----
2.30
----
F
7.00
8.30
9.60
1. All dimensions are in millimeters.
2. Dimensions do not include mold protrusions.
e
Marking Information:
Product: AP9408
9408GJ
YWWSSS
©2009 Advanced Power Electronics Corp. USA
www.a-powerusa.com
Package Code
GJ = RoHS-compliant halogen-free TO-251
Date Code (YWWSSS)
Y : Last digit of the year
WW : Work week
SSS : Lot code sequence
6/6
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