2SK3571 Data Sheet

2SK3571 Data Sheet
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3571
SWITCHING
N-CHANNEL POWER MOS FET
★
DESCRIPTION
ORDERING INFORMATION
The 2SK3571 is N-channel MOS FET device that features a
low on-state resistance and excellent switching characteristics,
PART NUMBER
PACKAGE
2SK3571
TO-220AB
2SK3571-S
TO-262
2SK3571-ZK
TO-263
designed for low voltage high current applications such as
DC/DC converter with synchronous rectifier.
FEATURES
TO-220SMD
2SK3571-Z
•4.5V drive available.
Note
Note TO-220SMD package is produced only in Japan.
•Low on-state resistance,
RDS(on)1 = 9.0 mΩ MAX. (VGS = 10 V, ID = 24 A)
•Low gate charge
QG = 21 nC TYP. (VDD = 16 V, VGS = 10 V, ID = 48 A)
•Built-in gate protection diode
•Surface mount device available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
20
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25°C)
ID(DC)
±48
A
ID(pulse)
±192
A
Total Power Dissipation (TA = 25°C)
PT1
1.5
W
Total Power Dissipation (TC = 25°C)
PT2
40
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
−55 to +150
°C
Drain Current (pulse)
Note
Note PW ≤ 10 µs, Duty Cycle ≤ 1%
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16257EJ2V0DS00 (2nd edition)
Date Published September 2002 NS CP (K)
Printed in Japan
The mark ! shows major revised points.
©
2002
2SK3571
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristics
Symbol
MIN.
TYP.
MAX.
Unit
Zero Gate Voltage Drain Current
IDSS
VDS = 20 V, VGS = 0 V
10
µA
Gate Leakage Current
IGSS
VGS = ±20 V, VDS = 0 V
±10
µA
Gate Cut-off Voltage
VGS(off)
VDS = 10 V, ID = 1 mA
1.5
2.5
V
Forward Transfer Admittance
| yfs |
VDS = 10 V, ID = 24 A
11
RDS(on)1
VGS = 10 V, ID = 24 A
7.0
9.0
mΩ
RDS(on)2
VGS = 4.5 V, ID = 18 A
10
16
mΩ
Drain to Source On-state Resistance
S
Input Capacitance
Ciss
VDS = 10 V
1100
pF
Output Capacitance
Coss
VGS = 0 V
450
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
160
pF
Turn-on Delay Time
td(on)
VDD = 10 V, ID = 24 A
13
ns
tr
VGS = 10 V
5
ns
td(off)
RG = 10 Ω
40
ns
9
ns
Rise Time
Turn-off Delay Time
Fall Time
tf
Total Gate Charge
QG
VDD = 16 V
21
nC
Gate to Source Charge
QGS
VGS = 10 V
4.2
nC
Gate to Drain Charge
QGD
ID = 48 A
5
nC
Body Diode Forward Voltage
★
Test Conditions
VF(S-D)
IF = 48 A, VGS = 0 V
1.0
V
Reverse Recovery Time
trr
IF = 48 A, VGS = 0 V
41
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A/µs
27
nC
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
D.U.T.
VGS
RL
VGS
RG
PG.
Wave Form
VDD
0
VGS
10%
PG.
90%
τ
τ = 1 µs
Duty Cycle ≤ 1%
2
90%
VDS
VDS
10%
0
10%
Wave Form
td(on)
tr
ton
RL
50 Ω
VDD
90%
VDS
VGS
0
IG = 2 mA
td(off)
tf
toff
Data Sheet D16257EJ2V0DS
2SK3571
TYPICAL CHARACTERISTICS (TA = 25°°C)
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
120
50
PT - Total Power Dissipation - W
dT - Percentage of Rated Power - %
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
40
30
20
10
0
0
0
25
50
75
100
125
150
175
0
25
TC - Case Temperature - °C
50
75
100
125
150
175
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
1000
ID(pulse)
PW = 10 µs
R DS(on) limited
100
100 µs
10
DC
ID(DC)
1 ms
Power dissipation
limited
10 m s
1
T C = 25°C
Single pulse
0.1
0.1
1
10
100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
rth(t) - Transient Thermal Resistance - °C/W
ID - Drain Current - A
★
100
Rth(ch-A) = 83.3°C/W
10
Rth(ch-C) = 3.13°C/W
1
0.1
Single pulse
0.01
10 µ
100 µ
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet D16257EJ2V0DS
3
2SK3571
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
200
1000
ID - Drain Current - A
ID - Drain Current - A
V DS = 10 V
Pulsed
V GS = 10 V
150
100
4.5 V
100
10
T ch = 150°C
75°C
25°C
−55°C
1
50
0.1
Pulsed
0
0.01
0
0.5
1
1.5
2
2.5
3
0
1
VDS - Drain to Source Voltage - V
| yfs | - Forward Transfer Admittance - S
VGS(off) - Gate Cut-off Voltage - V
V DS = 10 V
ID = 1 mA
5
6
2
1.5
1
0.5
100
10
T ch = 150°C
75°C
25°C
−55°C
1
V DS = 10 V
Pulsed
0
0.1
-50
0
50
100
150
0.1
Tch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
25
Pulsed
20
15
V GS = 4.5 V
10
10 V
5
0
1
10
100
1
10
100
ID - Drain Current - A
1000
RDS(on) - Drain to Source On-state Resistance - mΩ
RDS(on) - Drain to Source On-state Resistance - mΩ
4
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
3
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
25
Pulsed
20
15
ID = 24 A
10
ID - Drain Current - A
4
3
VGS - Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
2.5
2
Data Sheet D16257EJ2V0DS
5
0
0
5
10
15
VGS - Gate to Source Voltage - V
20
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
20
10000
Ciss, Coss, Crss - Capacitance - pF
15
V GS = 4.5 V
10
10 V
5
1000
C oss
C rss
100
ID = 24 A
Pulsed
VGS = 0 V
f = 1 MHz
10
0.01
0
-50
0
50
100
150
0.1
1
10
100
VDS - Drain to Source Voltage - V
Tch - Channel Temperature - °C
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
10 00
20
V D D = 10 V
V G S = 10 V
R G = 10 Ω
VDS - Drain to Source Voltage - V
td(on), tr, td(off), tf - Switching Time - ns
C iss
10 0
t d (o ff)
tf
t d (o n )
10
tr
10
V DD = 16 V
10 V
16
8
12
6
V GS
8
4
4
2
ID = 48 A
V DS
1
0.1
1
10
0
10 0
VGS - Gate to Source Voltage - V
RDS(on) - Drain to Source On-state Resistance - mΩ
2SK3571
0
0
ID - Drain Current - A
5
10
15
20
25
QG - Gate Change - nC
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
1000
1000
trr - Reverse Recovery Time- ns
IF - Diode Forward Current - A
Pulsed
100
V GS = 10 V
10
0V
1
0.1
100
10
di/dt = 100 A/µs
VGS = 0 V
1
0.01
0
0.4
0.8
1.2
1.6
VF(S-D) - Source to Drain Voltage - V
Data Sheet D16257EJ2V0DS
0.1
1
10
100
ID - Drain Current - A
5
2SK3571
★ PACKAGE DRAWINGS (Unit: mm)
1) TO-220AB (MP-25)
φ 3.6±0.2
1.0±0.5
4.8 MAX.
10.6 MAX.
3.0±0.3
2) TO-262 (MP-25 Fin Cut)
10 TYP.
1.3±0.2
4
1
1 2 3
2.54 TYP.
2.8±0.2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
6.0 MAX.
2.54 TYP.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
4) TO-220SMD (MP-25Z)
3) TO-263 (MP-25ZK)
1.4±0.2
0.5±
0.2
0.75±0.3
2.54 TYP.
8.5±0.2
2
3
P.
TY P.
R
Y
0.5 R T
.8
0
2.54 TYP.
8o
2
2.8±0.2
0.25
1
3
1.Gate
2.Drain
3.0±0.5
1
1.1±0.4
0.025 to
0.25
0 to
2.54
4
1.0±0.5
9.15±0.2
0.7±0.15
1.3±0.2
1.3±0.2
2.45±0.25
8.4 TYP.
4
4.8 MAX.
10 TYP.
1.35±0.3
0.4
8.0 TYP.
No plating
Note
4.45±0.2
15.25±0.5
10.0±0.2
2.8±0.2
0.5±0.2
0.75±0.3
2.54 TYP.
0.5±0.2
0.75±0.1
2.54 TYP.
3
1.3±0.2
12.7 MIN.
1.3±0.2
2
12.7 MIN.
4
1.3±0.2
8.5±0.2
15.5 MAX.
5.9 MIN.
10.0 TYP.
4.8 MAX.
0.5±0.2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
2.5
3.Source
4.Fin (Drain)
Note This package is produced only in Japan.
EQUIVALENT CIRCUIT
Remark
Drain
The diode connected between the gate and source of the transistor
serves as a protector against ESD. When this device actually used, an
additional protection circuit is externally required if a voltage exceeding
Body
Diode
Gate
Gate
Protection
Diode
6
the rated voltage may be applied to this device.
Source
Data Sheet D16257EJ2V0DS
2SK3571
[MEMO]
Data Sheet D16257EJ2V0DS
7
2SK3571
• The information in this document is current as of September, 2002. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all
products and/or types are available in every country. Please check with an NEC sales representative
for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
• NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
• Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
• While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
• NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness
to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
M8E 00. 4
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