RADIATION HARDENED ... POWER MOSFET 200V, N-CHANNEL SURFACE MOUNT (SMD-0.5)

RADIATION HARDENED         ... POWER MOSFET 200V, N-CHANNEL SURFACE MOUNT (SMD-0.5)
PD - 93836B
IRHNJ57230SE
JANSR2N7486U3
200V, N-CHANNEL
REF: MIL-PRF-19500/704
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-0.5)
4#
c
TECHNOLOGY
Product Summary
Part Number Radiation Level
IRHNJ57230SE 100K Rads (Si)
RDS(on)
0.22Ω
ID
12A
QPL Part Number
JANSR2N7486U3
International Rectifier’s R5 TM technology provides
high performance power MOSFETs for space applications. These devices have been characterized for
Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
SMD-0.5
Features:
n
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Ultra Low RDS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Ceramic Package
Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
Units
12
7.8
48
75
0.6
±20
60
12
7.5
5.4
-55 to 150
A
W
W/°C
V
mJ
A
mJ
V/ns
o
C
300 (for 5s)
1.0 (Typical)
g
For footnotes refer to the last page
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1
09/10/03
IRHNJ57230SE, JANSR2N7486U3
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
Drain-to-Source Breakdown Voltage
200
—
—
V
—
0.26
—
V/°C
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
—
—
0.22
Ω
VGS = 12V, ID = 7.8A
2.5
6.0
—
—
—
—
—
—
4.5
—
10
25
V
S( )
VDS = VGS, ID = 1.0mA
VDS > 15V, IDS = 7.8A ➃
VDS= 160V ,VGS=0V
VDS = 160V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =12V, ID = 12A
VDS = 100V
∆BVDSS/∆TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
g fs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Typ Max Units
Ω
BVDSS
µA
IGSS
IGSS
Qg
Q gs
Q gd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.0
100
-100
28
9.0
12
25
100
35
30
—
Ciss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
1000
184
11
—
—
—
nA
nC
ns
nH
pF
Test Conditions
➃
VDD = 100V, ID = 12A,
VGS =12V,RG = 7.5Ω
Measured from the center of
drain pad to center of source pad
VGS = 0V, VDS = 25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS
ISM
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
—
—
—
—
12
48
A
VSD
trr
Q RR
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
1.2
300
3.2
V
nS
µC
ton
Forward Turn-On Time
Test Conditions
Tj = 25°C, IS = 12A, VGS = 0V ➃
Tj = 25°C, IF = 12A, di/dt ≤ 100A/µs
VDD ≤ 25V ➃
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJ-PCB
Junction-to-Case
Junction-to-PC board
Min Typ Max
—
—
—
6.9
1.67
—
Units
°C/W
Test Conditions
soldered to a 2” square copper-clad board
Note: Corresponding Spice and Saber models are available on International Rectifier Website.
For footnotes refer to the last page
2
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Radiation Characteristics
IRHNJ57230SE, JANSR2N7486U3
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅
Parameter
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)
RDS(on)
VSD
Units
Test Conditions ˆ
V
µA
VGS = 0V, ID = 1.0mA
VGS = VDS, ID = 1.0mA
VGS = 20V
VGS = -20V
VDS=160V, VGS=0V
0.222
Ω
VGS = 12V, ID = 7.8A
—
0.22
Ω
VGS = 12V, ID = 7.8A
—
1.2
V
VGS = 0V, ID = 12A
100K Rads (Si)
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source „
On-State Resistance (TO-3)
Static Drain-to-Source „
On-State Resistance (SMD-0.5)
„
Diode Forward Voltage
Min
Max
200
2.0
—
—
—
—
4.5
100
-100
10
—
nA
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
Br
I
Au
LET
MeV/(mg/cm2))
36.7
59.8
82.3
Energy
(MeV)
309
341
350
Range
(µm) @VGS=0V @VGS=-5V
39.5
200
200
32.5
200
200
28.4
200
200
VDS (V)
@VGS=-10V @VGS=-15V
200
200
200
185
150
50
@VGS=-20V
200
120
25
250
VDS
200
Br
I
Au
150
100
50
0
0
-5
-10
-15
-20
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHNJ57230SE, JANSR2N7486U3
100
Pre-Irradiation
100
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
TOP
10
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
1
0.1
5.0V
20µs PULSE WIDTH
T = 25 C
1
10
100
°
J
1
10
100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.5
TJ = 150 ° C
10
TJ = 25 ° C
1
0.1
5.0
15
V DS = 50V
20µs PULSE WIDTH
6.0
7.0
8.0
9.0
10.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
RDS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
20µs PULSE WIDTH
T = 150 C
0.1
0.1
100
4
5.0V
1
°
J
0.01
0.1
10
ID = 12A
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 12V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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Pre-Irradiation
VGS =
Ciss =
Crss =
Coss =
1600
0V,
f = 1MHz
Cgs + Cgd , Cds SHORTED
Cgd
Cds + Cgd
Ciss
1200
Coss
800
C
rss
400
20
VGS , Gate-to-Source Voltage (V)
2000
C, Capacitance (pF)
IRHNJ57230SE, JANSR2N7486U3
0
1
10
ID = 12A
VDS = 160V
VDS = 100V
VDS = 40V
15
10
5
FOR TEST CIRCUIT
SEE FIGURE 13
0
100
0
10
VDS , Drain-to-Source Voltage (V)
20
30
40
50
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
100
OPERATION IN THIS AREA LIMITED BY
ID, Drain-to-Source Current (A)
ISD , Reverse Drain Current (A)
RDS(on)
TJ = 150 ° C
10
TJ = 25 ° C
1
V GS = 0 V
0.1
0.3
0.6
0.9
1.2
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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1.5
10
100µs
1ms
1
0.1
Tc = 25°C
Tj = 150°C
Single Pulse
1.0
10ms
10
100
1000
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
5
IRHNJ57230SE, JANSR2N7486U3
Pre-Irradiation
12
RD
VDS
VGS
9
I D , Drain Current (A)
D.U.T.
RG
+
-VDD
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
6
Fig 10a. Switching Time Test Circuit
3
VDS
90%
0
25
50
75
100
125
150
TC , Case Temperature ( ° C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
1
D = 0.50
0.20
0.10
P DM
0.05
0.1
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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Pre-Irradiation
IRHNJ57230SE, JANSR2N7486U3
1 5V
L
VDS
D .U .T.
RG
IA S
2V
0GS
V
D R IV E R
+
- VD D
0 .0 1 Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
A
EAS , Single Pulse Avalanche Energy (mJ)
100
TOP
80
BOTTOM
60
40
20
0
25
V (B R )D SS
ID
5.4A
9.6A
12A
50
75
100
125
150
Starting TJ , Junction Temperature ( °C)
tp
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Current Regulator
Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
QG
12V
.2µF
.3µF
12 V
QGS
QGD
+
V
- DS
VGS
VG
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
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D.U.T.
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
7
IRHNJ57230SE, JANSR2N7486U3
Pre-Irradiation
Footnotes:
➀ Repetitive Rating; Pulse width limited by
maximum junction temperature.
➁ VDD = 50V, starting TJ = 25°C, L= 0.82 mH
Peak IL = 12A, VGS = 12V
➂ I SD ≤ 12A, di/dt ≤ 366A/µs,
VDD ≤ 200V, TJ ≤ 150°C
➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
➄ Total Dose Irradiation with VGS Bias.
12 volt VGS applied and V DS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
➅ Total Dose Irradiation with VDS Bias.
160 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions — SMD-0.5
PAD ASSIGNMENTS
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 09/03
8
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