Isocom

Isocom
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Jameco Part Number 41005
4N25X, 4N26X, 4N27X, 4N28X
4N25, 4N26, 4N27, 4N28
OPTICALLY COUPLED
ISOLATOR
PHOTOTRANSISTOR OUTPUT
APPROVALS
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UL recognised, File No. E91231
'X' SPECIFICATION APPROVALS
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VDE 0884 in 3 available lead forms : - STD
- G form
- SMD approved to CECC 00802
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Certified to EN60950 by the following
Test Bodies :Nemko - Certificate No. P96101299
Fimko - Registration No. 190469-01..22
Semko - Reference No. 9620076 01
Demko - Reference No. 305567
Dimensions in mm
2.54
7.0
6.0
1
2
6
5
3
4
1.2
7.62
6.62
7.62
4.0
3.0
13°
Max
0.5
3.0
0.5
3.35
0.26
DESCRIPTION
The 4N25, 4N26, 4N27, 4N28 series of
optically coupled isolators consist of infrared
light emitting diode and NPN silicon photo
transistor in a standard 6 pin dual in line plastic
package.
FEATURES
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Options :10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
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High Isolation Voltage (5.3kVRMS ,7.5kVPK )
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All electrical parameters 100% tested
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Custom electrical selections available
APPLICATIONS
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DC motor controllers
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Industrial systems controllers
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Measuring instruments
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Signal transmission between systems of
different potentials and impedances
OPTION SM
OPTION G
SURFACE MOUNT
7.62
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature
-55°C to + 150°C
Operating Temperature
-55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current
Reverse Voltage
Power Dissipation
60mA
6V
105mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BVCEO
Collector-base Voltage BVCBO
Emitter-collector Voltage BVECO
Power Dissipation
30V
70V
6V
160mW
POWER DISSIPATION
0.6
0.1
1.25
0.75
0.26
Total Power Dissipation
200mW
(derate linearly 2.67mW/°C above 25°C)
10.16
7/12/00
DB91028M-AAS/A1
ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted )
Input
Output
Coupled
PARAMETER
MIN TYP MAX UNITS
Forward Voltage (VF)
Reverse Voltage (VR)
Reverse Current (IR)
6
1.2
10
V
V
µA
IF = 10mA
IR = 10µA
VR = 6V
Collector-emitter Breakdown (BVCEO)
( Note 2 )
Collector-base Breakdown (BVCBO)
Emitter-collector Breakdown (BVECO)
Collector-emitter Dark Current (ICEO)
Collector-base Dark Current (ICBO)
30
V
IC = 1mA
70
6
50
20
V
V
nA
nA
IC = 100µA
IE = 100µA
VCE = 10V
VCE = 10V
Current Transfer Ratio (CTR)
4N25, 4N26
4N27, 4N28
Collector-emitter Saturation VoltageVCE(SAT)
20
10
0.5
%
%
V
10mA IF , 10V VCE
10mA IF , 10V VCE
50mA IF , 2mA IC
VRMS
VPK
Ω
See note 1
See note 1
VIO = 500V (note 1)
µs
µs
µs
µs
VCC = 10V ,
IF= 10mA, RL = 100Ω
Input to Output Isolation Voltage VISO
5300
7500
5x1010
Input-output Isolation Resistance RISO
Turn-on Time
Turn-off Time
Output Rise Time
Output Fall Time
Note 1
Note 2
1.5
TEST CONDITION
ton
toff
tr
tf
4
3
2
2
( FIG 1)
Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory.
VCC
Input
ton
toff
RL = 100Ω
tr
Output
tf
Output
10%
10%
90%
90%
FIG 1
7/12/00
DB91028M-AAS/A1
Collector Power Dissipation vs. Ambient Temperature
Relative Current Transfer Ratio
vs. Forward Current
2.8
Relative current transfer ratio
Collector power dissipation P C (mW)
200
150
100
50
2.4
2.0
1.6
1.2
0.8
VCE = 0.5V
TA = 25°C
0.4
0
0
-30
0
25
50
75
100
1
125
2
5
10
20
50
Forward current IF (mA)
Ambient temperature TA ( °C )
Forward Current vs. Ambient Temperature
Relative Current Transfer Ratio
vs. Forward Current
80
1.4
Relative current transfer ratio
Forward current I F (mA)
70
60
50
40
30
20
10
1.2
1.0
0.8
0.6
0.4
VCE = 10V
TA = 25°C
0.2
0
-30
0
25
50
75
100
125
1
Ambient temperature TA ( °C )
0.5
0
0
25
50
75
Ambient temperature TA ( °C )
7/12/00
10
20
50
Collector-emitter Saturation
Voltage vs. Ambient Temperature
(V)
CE(SAT)
1.0
100
Collector-emitter saturation voltage V
Relative current transfer ratio
IF = 10mA
VCE = 10V
-30
5
Forward current IF (mA)
Relative Current Transfer Ratio
vs. Ambient Temperature
1.5
2
0.14
0.12
IF = 50mA
IC = 2mA
0.10
0.08
0.06
0.04
0.02
0
-30
0
25
50
75
100
Ambient temperature TA ( °C )
DB91028M-AAS/A1
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