SOT223 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS

SOT223 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS
SOT223 NPN SILICON PLANAR MEDIUM
POWER DARLINGTON TRANSISTORS
FZT605
ISSUE 4 - MARCH 2001
FEATURES
*
*
C
Guaranteed hFE Specified up to 2A
Fast Switching
E
PARTMARKING DETAIL COMPLEMENTARY TYPES -
FZT605
FZT705
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V CBO
140
V
Collector-Emitter Voltage
V CEO
120
V
Emitter-Base Voltage
V EBO
10
V
Peak Pulse Current
I CM
Continuous Collector Current
IC
Power Dissipation
P tot
Operating and Storage Temperature Range
T j :T stg
4
A
1.5
A
2
W
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V (BR)CBO
140
V
I C=100 µ A
Collector-Emitter
Breakdown Voltage
V (BR)CEO
120
V
I C=10mA*
Emitter-Base Breakdown Voltage
V (BR)EBO
10
V
I E=100 µ A
Collector Cut-Off
Current
I CBO
0.01
10
µA
µA
V CB=120V
V CB=120V, T amb =100°C
Emitter Cut-Off Current
I EBO
0.1
µA
V EB=8V
Collector-Emitter Cut-Off Current
I CES
10
µA
V CES=120V
Collector-Emitter Saturation
Voltage
V CE(sat)
1.0,
1.5
V
V
I C=250mA, I B=0.25mA*
I C=1A, I B=1mA*
Base-Emitter Saturation Voltage
V BE(sat)
1.8
V
I C=1A, I B=1mA*
Base-Emitter Turn-On Voltage
V BE(on)
1.7
V
I C =1A, V CE=5V*
Static Forward
Current Transfer Ratio
h FE
2K
5K
2K
100K
0.5K
Transition Frequency
ft
150
MHz
I C=100mA, V CE=10V
f=20MHz
V EB=500mV, f=1MHz
I C=50mA, V CE=5V
I C=500mA, V CE=5V*
I C=1A, V CE=5V*
I C=2A, V CE=5V*
Input Capacitance
C ibo
90 Typical
pF
Output Capacitance
C obo
15 Typical
pF
VCB=10V, F=1MHz
Switching Times
t on
0.5 Typical
nsec
t off
1.6 Typical
nsec
I C=500mA, V CE=10V
I B1=I B2=0.5mA
* Measured under pulsed conditions. Pulse width = 300µs. Duty cycle 2%
Spice parameter data is available upon request for these devices.
TBA
FZT605
TYPICAL CHARACTERISTICS
-55°C
+25°C
+100°C
+175°C
VCE(sat) - (Volts)
1.6
1.4
2.5
1.2
IC/IB=100
1.0
0.8
0.6
0.4
0.2
0
0.01
0.1
1
10
hFE - Gain normalised to 1 Amp
1.8
-55°C
+25°C
+100°C
1.5
1.0
0.5
0.001
IC - Collector Current (Amps)
0.01
0.1
2.2
2.2
1.8
VBE - (Volts)
VBE(sat) - (Volts)
-55°C
+25°C
+100°C
2.0
1.6
1.4
1.2
IC/IB=100
1.0
0.8
0.6
1.6
1.4
1.2
1.0
VCE=5V
0.8
0.6
0.4
0.01
0.1
1
0.4
10
0.01
IC - Collector Current (Amps)
0.1
1
10
IC - Collector Current (Amps)
VBE(sat) v IC
VBE(on) v IC
10
IC-Collector Current (A)
10
IC-Collector Current (A)
10
hFE v IC
-55°C
+25°C
+100°C
+175°C
1.8
1
IC - Collector Current (Amps)
VCE(sat) v IC
2.0
VCE=5V
2.0
1
DC
1s
100ms
10ms
1ms
100µs
0.1
0.01
1
10
100
1000
1
DC
1s
100ms
10ms
1ms
100µs
0.1
0.01
1
VCE - Collector Emitter Voltage (V)
10
100
VCE - Collector Emitter Voltage (V)
FZT605 Safe Operating Area
FZT604 Safe Operating Area
78
1000
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