irg4bc20kd spbf
PD -95677
IRG4BC20KD-SPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT
RECOVERY DIODE
Features
• Short Circuit Rated UltraFast: Optimized for
high operating frequencies >5.0 kHz , and Short
Circuit Rated to 10µs @ 125°C, VGE = 15V
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
previous generation
• IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
• Industry standard D2Pak package
• Lead-Free
Short Circuit Rated
UltraFast IGBT
C
VCES = 600V
VCE(on) typ. = 2.27V
G
@VGE = 15V, IC = 9.0A
E
n-channel
Benefits
• Latest generation 4 IGBT's offer highest power
density motor controls possible.
•HEXFREDTM diodes optimized for performance
with IGBTs. Minimized recovery characteristics
reduce noise, EMI and switching losses.
•This part replaces the IRGBC20KD2-S and
IRGBC20MD2-S products.
• For hints see design tip 97003.
D 2 Pak
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
tsc
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current 
Clamped Inductive Load Current ‚
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Thermal Resistance
Parameter
RθJC
RθJC
RθCS
RθJA
Wt
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient ( PCB Mounted,steady-state)…
Weight
Max.
Units
600
16
9.0
32
32
7.0
32
10
± 20
60
24
-55 to +150
V
A
µs
V
W
°C
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Typ.
Max.
Units
–––
2.1
2.5
–––
40
–––
°C/W
0.5
–––
1.44
g
8/11/04
IRG4BC20KD-SPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)CES
∆V(BR)CES/∆TJ
VCE(on)
VGE(th)
∆VGE(th)/∆TJ
gfe
ICES
VFM
IGES
Parameter
Min. Typ. Max. Units
Collector-to-Emitter Breakdown Voltageƒ 600 —
—
V
Temperature Coeff. of Breakdown Voltage — 0.49 — V/°C
Collector-to-Emitter Saturation Voltage
— 2.27 2.8
— 3.01 —
V
— 2.43 —
Gate Threshold Voltage
3.0
—
6.0
Temperature Coeff. of Threshold Voltage
—
-10
— mV/°C
Forward Transconductance „
2.9 4.3
—
S
Zero Gate Voltage Collector Current
—
—
250
µA
—
— 1000
Diode Forward Voltage Drop
—
1.4 1.7
V
—
1.3 1.6
Gate-to-Emitter Leakage Current
—
— ±100 nA
Conditions
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0mA
IC = 9.0A
VGE = 15V
See Fig. 2, 5
IC = 16A
IC = 9.0A, TJ = 150°C
VCE = VGE, IC = 250µA
VCE = VGE, IC = 250µA
VCE = 100V, IC = 9.0A
VGE = 0V, VCE = 600V
VGE = 0V, VCE = 600V, TJ = 150°C
IC = 8.0A
See Fig. 13
IC = 8.0A, TJ = 150°C
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
t d(on)
tr
td(off)
tf
Eon
Eoff
Ets
tsc
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
t d(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
trr
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Irr
Diode Peak Reverse Recovery Current
Qrr
Diode Reverse Recovery Charge
di(rec)M/dt
Diode Peak Rate of Fall of Recovery
During tb
Min.
—
—
—
—
—
—
—
—
—
—
10
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ. Max. Units
Conditions
34
51
IC = 9.0A
4.9 7.4
nC
VCC = 400V
See Fig.8
14
21
VGE = 15V
54
—
34
—
TJ = 25°C
ns
180 270
IC = 9.0A, VCC = 480V
72 110
VGE = 15V, RG = 50Ω
0.34 —
Energy losses include "tail"
0.30 —
mJ and diode reverse recovery
0.64 0.96
See Fig. 9,10,14
—
—
µs
VCC = 360V, TJ = 125°C
VGE = 15V, RG = 50Ω , VCPK < 500V
51
—
TJ = 150°C,
See Fig. 11,14
37
—
IC = 9.0A, VCC = 480V
ns
220 —
VGE = 15V, RG = 50Ω
160 —
Energy losses include "tail"
0.85 —
mJ and diode reverse recovery
7.5
—
nH
Measured 5mm from package
450 —
VGE = 0V
61
—
pF
VCC = 30V
See Fig. 7
14
—
ƒ = 1.0MHz
37
55
ns
TJ = 25°C See Fig.
55
90
TJ = 125°C
14
IF = 8.0A
3.5 5.0
A
TJ = 25°C See Fig.
4.5 8.0
TJ = 125°C
15
VR = 200V
65 138
nC
TJ = 25°C
See Fig.
124 360
TJ = 125°C
16
di/dt = 200Aµs
240 —
A/µs TJ = 25°C
See Fig.
210 —
TJ = 125°C
17
IRG4BC20KD-SPbF
2.5
For both:
Duty cycle: 50%
TJ = 125°C
55°C
Tsink = 90°C
Gate drive as specified
LOAD CURRENT (A)
2.0
Power Dissipation = 1.8 W
1.5
Square wave:
60% of rated
voltage
1.0
I
0.5
Ideal diodes
0.0
0.1
1
10
100
f, Frequency (KHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
TJ = 25 o C
TJ = 150 o C
10
1
V GE = 15V
20µs PULSE WIDTH
1
10
VCE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
I C, Collector-to-Emitter Current (A)
I C , Collector-to-Emitter Current (A)
100
10
TJ = 150 o C
TJ = 25 oC
1
V CC = 50V
5µs PULSE WIDTH
5
10
15
VGE , Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
20
IRG4BC20KD-SPbF
5.0
VCE , Collector-to-Emitter Voltage(V)
Maximum DC Collector Current(A)
20
15
10
5
0
25
50
75
100
125
150
TC , Case Temperature ( ° C)
VGE = 15V
80 us PULSE WIDTH
IC = 18 A
4.0
3.0
IC = 9.0A
9A
IC = 4.5 A
2.0
1.0
-60 -40 -20
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( ° C)
Fig. 4 - Maximum Collector Current vs. Case
Temperature
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
Thermal Response (Z thJC )
10
1
D = 0.50
0.20
0.10
P DM
0.05
0.1
0.01
0.00001
0.02
0.01
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = PDM x Z thJC + TC
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
1
IRG4BC20KD-SPbF
20
VGE = 0V,
f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
Coes = Cce + Cgc
VGE , Gate-to-Emitter Voltage (V)
C, Capacitance (pF)
800
600
Cies
400
200
Coes
VCC = 400V
I C = 9.0A
16
12
8
4
Cres
0
1
10
0
100
VCE , Collector-to-Emitter Voltage (V)
Total Switching Losses (mJ)
Total Switching Losses (mJ)
10
V CC = 480V
V GE = 15V
TJ = 25 ° C
I C = 9.0A
0.6
0
10
20
30
40
RRGG ,, Gate
Resistance( (Ohm)
Gate Resistance
Ω)
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
20
30
40
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
0.7
0.5
10
QG , Total Gate Charge (nC)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
0.8
0
50
RG 50
= Ohm
Ω
VGE = 15V
VCC = 480V
IC = 18 A
1
IC = 9.0A
9A
IC = 4.5 A
0.1
-60 -40 -20
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature (° C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
IRG4BC20KD-SPbF
Ω
= 50
Ohm
= 150° C
= 480V
= 15V
100
I C , Collector-to-Emitter Current (A)
RG
TJ
VCC
VGE
2.0
1.0
0.0
0
4
8
12
16
VGE = 20V
T J = 125 o C
10
1
20
I C, Collector-to-emitter Current (A)
SAFE OPERATING AREA
1
10
100
VCE, Collector-to-Emitter Voltage (V)
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
Fig. 12 - Turn-Off SOA
100
Instantaneous Forward Current - I F (A)
Total Switching Losses (mJ)
3.0
10
TJ = 150°C
TJ = 125°C
TJ = 25°C
1
0.1
0.4
0.8
1.2
1.6
2.0
2.4
2.8
Forward Voltage Drop - V FM (V)
3.2
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
1000
IRG4BC20KD-SPbF
100
100
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
80
60
I F = 8.0A
40
I IRRM - (A)
t rr - (ns)
IF = 16A
I F = 16A
10
IF = 8.0A
I F = 4.0A
I F = 4.0A
20
0
100
1
100
1000
di f /dt - (A/µs)
Fig. 14 - Typical Reverse Recovery vs. dif/dt
di f /dt - (A/µs)
1000
Fig. 15 - Typical Recovery Current vs. dif/dt
500
10000
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
di(rec)M/dt - (A/µs)
Q RR - (nC)
400
300
I F = 16A
200
I F = 8.0A
1000
IF = 4.0A
IF = 8.0A
I F = 16A
100
IF = 4.0A
0
100
di f /dt - (A/µs)
Fig. 16 - Typical Stored Charge vs. dif/dt
1000
100
100
di f /dt - (A/µs)
Fig. 17 - Typical di(rec)M/dt vs. dif/dt
1000
IRG4BC20KD-SPbF
90% Vge
Same type
device as
D.U.T.
+Vge
Vce
430µF
80%
of Vce
D.U.T.
Ic
90% Ic
10% Vce
Ic
5% Ic
td(off)
tf
Eoff =
Fig. 18a - Test Circuit for Measurement of
ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
∫
t1+5µS
Vce icIcdtdt
Vce
t1
t1
t2
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
GATE VOLTAGE D.U.T.
10% +Vg
trr
Ic
Qrr =
tx
DUT VOLTAGE
AND CURRENT
Vce
10% Ic
90% Ic
tr
td(on)
∫
+Vg
10% Irr
10% Vcc
Vcc
trr
id
Ic dtdt
tx
Ipk
Vpk
Vcc
Irr
Ic
DIODE RECOVERY
WAVEFORMS
5% Vce
t1
∫
t2
VceieIcdtdt
Eon = Vce
t1
t2
DIODE REVERSE
RECOVERY ENERGY
t3
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Eon, td(on), tr
∫
t4
Erec = Vd
VdidIcdt dt
t3
t4
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
IRG4BC20KD-SPbF
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
D2Pak Part Marking Information (Lead-Free)
T H IS IS AN IR F 5 3 0 S W IT H
L OT CODE 80 2 4
AS S E M B L E D ON W W 0 2, 20 00
IN T H E AS S E M B L Y L IN E "L "
IN T E R N AT IO N AL
R E C T IF IE R
L OGO
N ote: "P " in as s em bly lin e
po s itio n in dicates "L ead-F r ee"
P AR T N U M B E R
F 5 30 S
AS S E M B L Y
L O T CO D E
OR
IN T E R N AT IO N AL
R E C T IF IE R
L O GO
AS S E M B L Y
L OT COD E
P AR T N U M B E R
F 530S
D AT E CO D E
P = D E S IG N AT E S L E AD -F R E E
P R O D U C T (O P T IO N AL )
Y E AR 0 = 2 0 0 0
W E E K 02
A = AS S E M B L Y S IT E CO D E
D AT E C O D E
Y E AR 0 = 2 0 0 0
W E E K 02
L IN E L
IRG4BC20KD-SPbF
Notes:
 Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20)
‚ VCC=80%(VCES), VGE=20V, L=10µH, RG= 50Ω (figure 19)
ƒ Pulse width ≤ 80µs; duty factor ≤ 0.1%.
„ Pulse width 5.0µs, single shot.
… When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
D2Pak Tape & Reel Infomation
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.60 (.063)
1.50 (.059)
11.60 (.457)
11.40 (.449)
1.65 (.065)
0.368 (.0145)
0.342 (.0135)
15.42 (.609)
15.22 (.601)
24.30 (.957)
23.90 (.941)
TRL
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.08/04
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
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