2N7579U2 RADIATION HARDENED ... POWER MOSFET 100V, N-CHANNEL

2N7579U2 RADIATION HARDENED         ... POWER MOSFET 100V, N-CHANNEL
PD-94299C
2N7579U2
IRHNA67160
100V, N-CHANNEL
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-2)
TECHNOLOGY
Product Summary
Part Number
IRHNA67160
Radiation Level
100K Rads (Si)
RDS(on)
0.010Ω
ID
56A*
IRHNA63160
300K Rads (Si)
0.010Ω
56A*
International Rectifier’s R6TM technology provides
superior power MOSFETs for space applications.
These devices have improved immunity to Single
Event Effect (SEE) and have been characterized for
useful performance with Linear Energy Transfer (LET)
up to 90MeV/(mg/cm2). Their combination of very low
RDS(on) and faster switching times reduces power
loss and increases power density in today’s high
speed switching applications such as DC-DC
converters and motor controllers. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, ease of paralleling
and temperature stability of electrical parameters.
SMD-2
Features:
n
n
n
n
n
n
n
n
n
n
Low RDS(on)
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Ceramic Package
Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
ID @VGS = 12V,TC = 25°C
ID @VGS = 12V,TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
Units
56*
56*
224
250
2.0
±20
462
56
25
5.0
-55 to 150
300 (for 5s)
3.3 (Typical)
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
g
* Current is limited by package
For footnotes refer to the last page
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1
12/21/11
IRHNA67160, 2N7679U2
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
BVDSS
Parameter
Min
Drain-to-Source Breakdown Voltage
100
—
—
V
VGS = 0V, ID = 1.0mA
—
0.11
—
V/°C
Reference to 25°C, ID = 1.0mA
—
—
0.010
Ω
∆BV DSS /∆T J Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
2.0
—
60
—
—
Typ Max Units
—
4.0
-10.12 —
—
—
—
10
—
25
IGSS
IGSS
Qg
Q gs
Q gd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2.8
100
-100
170
60
80
35
75
75
20
—
Ciss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
8690
1600
20
—
—
—
Rg
Gate Resistance
V
mV/°C
S
VGS = 12V, ID = 56A Ã
VDS = VGS, ID = 1.0mA
nC
V DS = 25V, IDS = 56A Ã
VDS= 80V ,VGS=0V
VDS = 80V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS = 12V, ID = 56A
VDS = 50V
ns
VDD = 50V, ID = 56A,
VGS = 12V, RG = 2.35Ω
µA
nA
nH
pF
Ω
0.45
Test Conditions
Measured from the center of
drain pad to center of source pad
VGS = 0V, VDS = 25V
f = 1.0MHz
f = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS
ISM
VSD
t rr
Q RR
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ton
Forward Turn-On Time
—
—
—
—
—
—
—
—
—
—
56*
224
1.2
500
5.5
Test Conditions
A
V
ns
µC
Tj = 25°C, IS = 56A, VGS = 0V Ã
Tj = 25°C, IF = 56A, di/dt ≤ 100A/µs
VDD ≤ 25V Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
* Current is limited by package
Thermal Resistance
Parameter
R thJC
Junction-to-Case
Min Typ Max Units
—
—
0.5
Test Conditions
°C/W
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
2
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Radiation Characteristics
Pre-Irradiation
IRHNA67160, 2N7579U2
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
BVDSS
V GS(th)
IGSS
IGSS
IDSS
RDS(on)
RDS(on)
VSD
Units
Test Conditions
V
µA
VGS = 0V, ID = 1.0mA
VGS = VDS , ID = 1.0mA
VGS = 20V
VGS = -20V
VDS= 80V, VGS= 0V
0.011
Ω
VGS = 12V, ID = 56A
—
0.010
Ω
VGS = 12V, ID = 56A
—
1.2
V
VGS = 0V, ID = 56A
Upto 300K Rads (Si)1
Min
Max
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source „
On-State Resistance (TO-3)
Static Drain-to-Source On-state „
Resistance (SMD-2)
100
2.0
—
—
—
—
4.0
100
-100
10
—
Diode Forward Voltage„
nA
1. Part numbers IRHNA67160, IRHNA63160
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
LET
Energy
Range
(MeV)
(µm)
2
(MeV/(mg/cm ))
@VGS=
@VGS=
@VGS=
@VGS=
@VGS=
@VGS=
0V
-5V
-10V
-15V
-19V
-20V
315 ± 5%
40 ± 5%
100
100
100
100
100
40
61 ± 5%
345 ± 5%
32 ± 7.5%
100
100
100
30
-
-
90 ± 5%
375 ± 7.5%
29 ± 7.5%
100
100
-
-
-
-
Bias VDS (V)
39 ± 5%
VDS (V)
120
100
80
60
40
20
0
LET=39 ± 5%
LET=61 ± 5%
LET=90 ± 5%
0
-5
-10
-15
-20
Bias VGS (V)
Fig a. Typical Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHNA67160, 2N7679U2
Pre-Irradiation
1000
VGS
TOP
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
100
10
5.0V
60µs PULSE WIDTH
Tj = 25°C
100
5.0V
10
60µs PULSE WIDTH
Tj = 150°C
1
1
0.1
1
10
0.1
100
10
100
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
2.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
1000
ID, Drain-to-Source Current (A)
1
VDS , Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
T J = 150°C
100
T J = 25°C
10
VDS = 25V
15
60µs PULSE WIDTH
1.0
5
5.5
6
6.5
7
7.5
8
8.5
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
1000
ID = 56A
2.0
1.5
1.0
0.5
VGS = 12V
0.0
9
-60 -40 -20
0
20
40
60
80 100 120 140 160
T J , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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IRHNA67160, 2N7579U2
RDS(on), Drain-to -Source On Resistance (m Ω)
RDS(on), Drain-to -Source On Resistance (m Ω)
Pre-Irradiation
30
ID = 56A
25
20
15
T J = 150°C
10
5
T J = 25°C
0
4
6
8
10
12
14
16
18
20
T J = 150°C
15
TJ = 25°C
10
5
VGS = 12V
0
0
20
40
80
160
200
240
ID, Drain Current (A)
VGS, Gate -to -Source Voltage (V)
Fig 6. Typical On-Resistance Vs
Drain Current
Fig 5. Typical On-Resistance Vs
Gate Voltage
130
5.5
ID = 1.0mA
VGS(th) Gate threshold Voltage (V)
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
120
125
120
115
110
105
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
ID = 50µA
ID = 250µA
ID = 1.0mA
ID = 150mA
0.0
100
-60 -40 -20
0
20
40
60
80 100 120 140 160
-60 -40 -20
0
20
40
60
80 100 120 140 160
T J , Temperature ( °C )
T J , Temperature ( °C )
Fig 7. Typical Drain-to-Source
Breakdown Voltage Vs Temperature
Fig 8. Typical Threshold Voltage Vs
Temperature
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5
IRHNA67160, 2N7679U2
14000
20
VGS , Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHz
C iss = C gs + C gd, C ds SHORTED
12000
C, Capacitance (pF)
Pre-Irradiation
C rss = C gd
C oss = C ds + C gd
10000
Ciss
8000
Coss
6000
4000
Crss
2000
12
8
4
0
10
VDS = 80V
VDS = 50V
VDS = 20V
16
0
1
ID = 56A
45A
100
FOR TEST CIRCUIT
SEE FIGURE17
13
0
40
80
120
160
200
QG , Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
120
T J = 150°C
100
ID , Drain Current (A)
ISD, Reverse Drain Current (A)
LIMITED BY PACKAGE
100
T J = 25°C
10
1.0
6
0.6
0.8
1.0
1.2
60
40
20
VGS = 0V
0.4
80
1.4
0
25
50
75
100
125
150
°
VSD , Source-to-Drain Voltage (V)
TC , Case Temperature (°C)
Fig 11. Typical Source-to-Drain Diode
Forward Voltage
Fig 12. Maximum Drain Current Vs.
Case Temperature
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Pre-Irradiation
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
EAS , Single Pulse Avalanche Energy (mJ)
ID, Drain-to-Source Current (A)
1000
IRHNA67160, 2N7579U2
100
100µs
1ms
10
10ms
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
DC
ID
25A
35.4A
BOTTOM
56A
TOP
800
600
400
200
0
1
10
100
1000
25
VDS , Drain-to-Source Voltage (V)
50
75
100
125
150
Starting T J , Junction Temperature (°C)
Fig 13. Maximum Safe Operating Area
Fig 14. Maximum Avalanche Energy
Vs. Drain Current
Thermal Response (Z thJC )
1
D = 0.50
0.1
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
PDM
0.01
0.001
0.00001
t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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7
IRHNA67160, 2N7679U2
Pre-Irradiation
V(BR)DSS
tp
15V
DRIVER
L
VDS
D.U.T.
RG
+
- VDD
IAS
VGS
20V
A
0.01Ω
tp
Fig 16a. Unclamped Inductive Test Circuit
I AS
Fig 16b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
QG
12V
50KΩ
.2µF
12V
QGS
.3µF
QGD
D.U.T.
VG
+
V
- DS
VGS
3mA
IG
Charge
Fig 17a. Basic Gate Charge Waveform
VDS
Fig 17b. Gate Charge Test Circuit
RD
VDS
90%
VGS
D.U.T.
RG
ID
Current Sampling Resistors
VDD
+
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 18a. Switching Time Test Circuit
8
10%
VGS
td(on)
tr
t d(off)
tf
Fig 18b. Switching Time Waveforms
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Pre-Irradiation
IRHNA67160, 2N7579U2
Footnotes:
À Repetitive Rating; Pulse width limited by
maximum junction temperature.
Á VDD = 25V, starting TJ = 25°C, L= 0.29mH
Peak IL = 56A, VGS = 12V
 ISD ≤ 56A, di/dt ≤ 640A/µs,
VDD ≤ 100V, T J ≤ 150°C
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with VGS Bias.
12 volt VGS applied and V DS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Å Total Dose Irradiation with VDS Bias.
80 volt VDS applied and V GS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions — SMD-2
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 12/2011
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