The LS5907 is a high-performance monolithic dual
JFET featuring tight matching and low drift over
temperature specifications, and is targeted for use in a
wide range of precision instrumentation applications
where tight tracking is required.
The hermetically sealed TO-71 package is well suited
for hi-reliability and harsh environment applications.
(See Packaging Information).
LS5907 Benefits:
Tight Tracking
Good matching
Ultra Low Leakage
Low Drift
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL CHARACTERISTICS MIN. BVGSS Breakdown Voltage 40 BVGGO Gate‐To‐Gate Breakdown 40 TRANSCONDUCTANCE YfSS Full Conduction 70 YfS Typical Operation 50 |YFS1‐2 / Y FS| Mismatch ‐‐ DRAIN CURRENT IDSS Full Conduction 60 |IDSS1‐2 / IDSS| Mismatch at Full Conduction ‐‐ GATE VOLTAGE VGS(off) or Vp Pinchoff voltage 0.6 VGS(on) Operating Range ‐‐ GATE CURRENT ‐IGmax. Operating ‐‐ ‐IGmax. High Temperature ‐‐ ‐IGSSmax. At Full Conduction ‐‐ ‐IGSSmax. High Temperature ‐‐ IGGO Gate‐to‐Gate Leakage ‐‐ OUTPUT CONDUCTANCE YOSS Full Conduction ‐‐ YOS Operating ‐‐ |YOS1‐2| Differential ‐‐ COMMON MODE REJECTION CMR ‐20 log |∆VGS1‐2/∆VDS| ‐‐ CMR ‐20 log |∆VGS1‐2/∆VDS| ‐‐ NOISE NF Figure ‐‐ en Voltage ‐‐ CAPACITANCE CISS Input ‐‐ CRSS Reverse Transfer ‐‐ CDD Drain‐to‐Drain ‐‐ FEATURES LOW DRIFT ULTRA LOW LEAKAGE LOW PINCHOFF ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) | VGS1‐2 / T| = 5µV/°C TYP. IG = 150fA TYP. Vp = 2V TYP. Maximum Temperatures Storage Temperature ‐65°C to +150°C Operating Junction Temperature +150°C Maximum Voltage and Current for Each Transistor – Note 1 ‐VGSS Gate Voltage to Drain or Source 40V ‐VDSO Drain to Source Voltage 40V ‐IG(f) Gate Forward Current 10mA ‐IG Gate Reverse Current 10µA Maximum Power Dissipation Device Dissipation @ Free Air – Total 40mW @ +125°C MATCHING CHARACTERISTICS @ 25°C UNLESS OTHERWISE NOTED
SYMBOL CHARACTERISTICS VALUE UNITS CONDITIONS | VGS1‐2 / T| max. DRIFT VS. 10 µV/°C VDG=10V, ID=30µA TEMPERATURE TA=‐55°C to +125°C | V GS1‐2 | max. OFFSET VOLTAGE 5 mV VDG=10V, ID=30µA TYP. 60 ‐‐ 300 100 1 400 2 2 ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ 1 ‐‐ 0.1 0.01 90 90 ‐‐ 20 ‐‐ ‐‐ ‐‐ MAX. ‐‐ ‐‐ 500 200 5 1000 5 4.5 4 1 1 2 5 ‐‐ 5 0.1 0.1 ‐‐ ‐‐ 1 70 3 1.5 0.1 UNITS V V µmho µmho % µA % V V pA nA pA nA pA µmho CONDITIONS VDS = 0 ID=1nA IG= 1nA ID= 0 IS= 0 VDG= 10V VGS= 0V f = 1kHz VDG= 10V ID= 30µA f = 1kHz VDG= 10V VGS= 0V VDS= 10V ID= 1nA VDS=10V ID=30µA VDG= 10V ID= 30µA TA= +125°C
VDS =0V VGS= 20V TA= +125°C VGG= 20V VDG= 10V VGS= 0V VDG= 10V ID=30µA dB dB nV/√Hz pF ∆VDS = 10 to 20V ID=30µA ∆VDS = 5 to 10V ID=30µA VDS= 10V VGS= 0V RG= 10MΩ f= 100Hz NBW= 6Hz VDG=10V ID=30µA f=10Hz NBW=1Hz VDS= 10V VGS= 0V f= 1MHz Click To Buy
Note 1 – These ratings are limiting values above which the serviceability of any semiconductor may be impaired
TO-71 (Bottom View)
VDG = 20V ID=30µA Micross Components Europe
Available Packages:
LS5907 in TO-71
LS5907 available as bare die
Please contact Micross for full package and die dimensions
Tel: +44 1603 788967
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
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