BT138X-600E,127 даташит
BT138X series D and E
12 A four-quadrant triacs, sensitive gate
Rev. 03 — 10 March 2008
Product data sheet
1. Product profile
1.1 General description
Passivated sensitive gate triac in a SOT186A full pack plastic package.
1.2 Features
n Very sensitive gate
n Direct interfacing to logic level ICs
n Isolated mounting base
n Gate triggering in four quadrants
n Direct interfacing to low power gate drive
circuits
n High isolation voltage
1.3 Applications
n General purpose switching and phase
control
n 230 V lamp dimmers
1.4 Quick reference data
n
n
n
n
n
n
VDRM ≤ 600 V (BT138X-600D)
VDRM ≤ 600 V (BT138X-600E)
VDRM ≤ 800 V (BT138X-800E)
IGT ≤ 5 mA (BT138X-600D)
IGT ≤ 10 mA (BT138X-600E)
IGT ≤ 10 mA (BT138X-800E)
n
n
n
n
n
IT(RMS) ≤ 12 A
ITSM ≤ 95 A (t = 20 ms)
IGT ≤ 10 mA (T2− G+) (BT138X-600D)
IGT ≤ 25 mA (T2− G+) (BT138X-600E)
IGT ≤ 25 mA (T2− G+) (BT138X-800E)
BT138X series D and E
NXP Semiconductors
12 A four-quadrant triacs, sensitive gate
2. Pinning information
Table 1.
Pinning
Pin
Description
Simplified outline
1
main terminal 1 (T1)
2
main terminal 2 (T2)
3
gate (G)
mb
mounting base; isolated
Graphic symbol
mb
T2
T1
G
sym051
1 2 3
SOT186A (TO-220F)
3. Ordering information
Table 2.
Ordering information
Type number
Package
BT138X-600D
Name
Description
TO-220F
plastic single-ended package; isolated heatsink mounted; 1 mounting hole; SOT186A
3-lead TO-220 ‘full pack’
BT138X-600E
Version
BT138X-800E
4. Limiting values
Table 3.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDRM
Parameter
repetitive peak off-state voltage
Conditions
Min
Max
Unit
BT138X-600D
[1]
-
600
V
BT138X-600E
[1]
-
600
V
BT138X-800E
-
800
V
full sine wave; Th ≤ 56 °C;
see Figure 4 and 5
-
12
A
t = 20 ms
-
95
A
t = 16.7 ms
-
105
A
-
45
A2s
T2+ G+
-
50
A/µs
T2+ G−
-
50
A/µs
T2− G−
-
50
A/µs
T2− G+
-
10
A/µs
IT(RMS)
RMS on-state current
ITSM
non-repetitive peak on-state current full sine wave; Tj = 25 °C prior to surge;
see Figure 2 and 3
I2t
I2t
dIT/dt
rate of rise of on-state current
for fusing
tp = 10 ms
ITM = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/µs
BT138X_SER_D_E_3
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 03 — 10 March 2008
2 of 12
BT138X series D and E
NXP Semiconductors
12 A four-quadrant triacs, sensitive gate
Table 3.
Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
IGM
Min
Max
Unit
peak gate current
-
2
A
PGM
peak gate power
-
5
W
PG(AV)
average gate power
-
0.5
W
Tstg
storage temperature
−40
+150
°C
Tj
junction temperature
-
125
°C
[1]
Conditions
over any 20 ms period
Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The
rate of rise of current should not exceed 15 A/µs.
003aac220
20
Ptot
(W)
15
conduction
angle
(degrees)
form
factor
a
30
60
90
120
180
4
2.8
2.2
1.9
1.57
α = 180°
120°
α
90°
60°
10
30°
5
0
0
2
4
6
8
10
12
IT(RMS) (A)
14
α = conduction angle
Fig 1.
Total power dissipation as a function of RMS on-state current; maximum values
BT138X_SER_D_E_3
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 03 — 10 March 2008
3 of 12
BT138X series D and E
NXP Semiconductors
12 A four-quadrant triacs, sensitive gate
003aac217
100
ITSM
(A)
80
60
40
ITSM
IT
t
20
1/f
Tj(init) = 25 °C max
0
1
10
102
103
104
number of cycles
f = 50 Hz
Fig 2.
Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
003aac221
103
ITSM
IT
ITSM
(A)
t
tp
Tj(init) = 25 °C max
102
(1)
(2)
10
10-5
10-4
10-3
10-2
tp (s)
10-1
tp ≤ 20 ms
(1) dIT/dt limit
(2) T2− G+ quadrant limit
Fig 3.
Non-repetitive peak on-state current as a function of pulse width; maximum values
BT138X_SER_D_E_3
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 03 — 10 March 2008
4 of 12
BT138X series D and E
NXP Semiconductors
12 A four-quadrant triacs, sensitive gate
003aac219
80
003aac216
15
IT(RMS)
(A) 70
IT(RMS)
(A)
60
10
50
40
30
5
20
10
0
10-2
10-1
0
-50
1
10
surge duration (s)
0
50
100
Th (°C)
150
f = 50 Hz
Th = 56 °C
Fig 4.
RMS on-state current as a function of surge
duration; maximum values
Fig 5.
RMS on-state current as a function of heatsink
temperature; maximum values
5. Thermal characteristics
Table 4.
Thermal characteristics
Symbol
Parameter
Rth(j-h)
Rth(j-a)
Conditions
Min
Typ
Max
Unit
thermal resistance from junction to full cycle; see Figure 6
heatsink
-
-
4.0
K/W
thermal resistance from junction to full cycle; in free air
ambient
-
55
-
K/W
003aac222
10
Zth(j-h)
(K/W)
1
10−1
P
10−2
t
tp
10−3
10−5
10−4
10−3
10−2
10−1
1
10
tp (s)
Fig 6.
Transient thermal impedance from junction to heatsink as a function of pulse width
BT138X_SER_D_E_3
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 03 — 10 March 2008
5 of 12
BT138X series D and E
NXP Semiconductors
12 A four-quadrant triacs, sensitive gate
6. Isolation characteristics
Table 5.
Isolation limiting values and characteristics
Th = 25 °C unless otherwise specified.
Symbol
Parameter
Visol(RMS)
Cisol
Conditions
Min
Typ
Max
Unit
RMS isolation voltage from all three terminals to external heatsink;
f = 50 Hz to 60 Hz; sinusoidal waveform;
relative humidity ≤ 65 %; clean and dust free
-
-
2500
V
isolation capacitance
-
10
-
pF
from pin 2 to external heatsink; f = 1 MHz
7. Static characteristics
Table 6.
Static characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
IGT
IL
Conditions
BT138X-600D
BT138X-600E
BT138X-800E
Unit
Min
Typ
Max
Min
Typ
Max
T2+ G+
-
1.3
5
-
2.5
10
mA
T2+ G−
-
2.8
5
-
4.0
10
mA
T2− G−
-
3.2
5
-
5.0
10
mA
T2− G+
-
5.5
10
-
11
25
mA
T2+ G+
-
-
15
-
-
30
mA
T2+ G−
-
-
20
-
-
40
mA
T2− G−
-
-
15
-
-
30
mA
T2− G+
-
-
20
-
-
40
mA
gate trigger current VD = 12 V; IT = 0.1 A; see Figure 8
latching current
VD = 12 V; IG = 0.1 A; see Figure 10
IH
holding current
VD = 12 V; IG = 0.1 A; see Figure 11
-
-
10
-
-
30
mA
VT
on-state voltage
IT = 15 A; see Figure 9
-
1.4
1.65
-
1.4
1.65
V
VGT
gate trigger voltage IT = 0.1 A; see Figure 7
-
0.7
1.5
-
0.7
1.5
V
VD = 12 V
VD = VDRM; Tj = 125 °C
ID
off-state current
VD = VDRM(max); Tj = 125 °C
0.25
0.4
-
0.25
0.4
-
V
-
0.1
0.5
-
0.1
0.5
mA
BT138X_SER_D_E_3
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 03 — 10 March 2008
6 of 12
BT138X series D and E
NXP Semiconductors
12 A four-quadrant triacs, sensitive gate
8. Dynamic characteristics
Table 7.
Dynamic characteristics
Symbol
Parameter
Conditions
BT138X-600D
BT138X-600E
BT138X-800E
Unit
Min
Typ
Max
Min
Typ
Max
dVD/dt
rate of rise of off-state voltage VDM = 0.67 × VDRM(max);
exponential waveform;
gate open circuit;
Tj = 125 °C
-
50
-
-
150
-
V/µs
tgt
gate-controlled turn-on time
-
2
-
-
2
-
µs
ITM = 16 A;
VD = VDRM(max);
IG = 0.1 A; dIG/dt = 5 A/µs
003aac223
1.6
003aac224
3
VGT
IGT
VGT(25°C)
IGT(25°C)
(1)
(2)
1.2
2
(3)
(4)
0.8
(1)
(2)
(3)
1
(4)
0.4
0
−60
−10
40
90
0
−60
140
Tj (°C)
−10
40
90
140
Tj (°C)
(1) T2− G+
(2) T2− G−
(3) T2+ G−
(4) T2+ G+
Fig 7.
Normalized gate trigger voltage as a function
of junction temperature
Fig 8.
Normalized gate trigger current as a function
of junction temperature
BT138X_SER_D_E_3
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 03 — 10 March 2008
7 of 12
BT138X series D and E
NXP Semiconductors
12 A four-quadrant triacs, sensitive gate
003aac214
40
003aac225
3
IT
(A)
IL
IL(25°C)
30
2
20
(1)
(2)
1
(3)
10
0
0
0.5
1
1.5
2
0
−60
2.5
VT (V)
−10
40
90
140
Tj (°C)
Vo = 1.175 V
Rs = 0.032 Ω
(1) Tj = 125 °C; typical values
(2) Tj = 125 °C; maximum values
(3) Tj = 25 °C; maximum values
Fig 9.
On-state current as a function of on-state
voltage
Fig 10. Normalized latching current as a function of
junction temperature
003aac226
2.0
IH
IH(25°C)
1.5
1.0
0.5
0
−60
−10
40
90
140
Tj (°C)
Fig 11. Normalized holding current as a function of junction temperature
BT138X_SER_D_E_3
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 03 — 10 March 2008
8 of 12
BT138X series D and E
NXP Semiconductors
12 A four-quadrant triacs, sensitive gate
9. Package outline
Plastic single-ended package; isolated heatsink mounted;
1 mounting hole; 3-lead TO-220 'full pack'
SOT186A
E
A
A1
P
q
D1
mounting
base
T
D
j
L2
L1
K
Q
b1
L
b2
1
2
3
b
c
w M
e
e1
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
UNIT
A
A1
b
b1
b2
c
D
D1
E
e
e1
j
K
mm
4.6
4.0
2.9
2.5
0.9
0.7
1.1
0.9
1.4
1.0
0.7
0.4
15.8
15.2
6.5
6.3
10.3
9.7
2.54
5.08
2.7
1.7
0.6
0.4
L
L1
14.4 3.30
13.5 2.79
L2
max.
P
Q
q
3
3.2
3.0
2.6
2.3
3.0
2.6
T
(2)
2.5
w
0.4
Notes
1. Terminal dimensions within this zone are uncontrolled.
2. Both recesses are ∅ 2.5 × 0.8 max. depth
OUTLINE
VERSION
SOT186A
REFERENCES
IEC
JEDEC
JEITA
3-lead TO-220F
EUROPEAN
PROJECTION
ISSUE DATE
02-04-09
06-02-14
Fig 12. Package outline SOT186A (TO-220F)
BT138X_SER_D_E_3
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 03 — 10 March 2008
9 of 12
BT138X series D and E
NXP Semiconductors
12 A four-quadrant triacs, sensitive gate
10. Revision history
Table 8.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BT138X_SER_D_E_3
20080310
Product data sheet
-
BT138X_SERIES_E_2
Modifications:
•
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
•
•
•
Legal texts have been adapted to the new company name where appropriate.
BT138X-600D product added.
Table 7 “Dynamic characteristics”: dVD/dt uprated for BT138X series E.
BT138X_SERIES_E_2
20010601
Product data sheet
-
BT138X_SERIES_E_1
BT138X_SERIES_E_1
19970901
Product data sheet
-
-
BT138X_SER_D_E_3
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 03 — 10 March 2008
10 of 12
BT138X series D and E
NXP Semiconductors
12 A four-quadrant triacs, sensitive gate
11. Legal information
11.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
11.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
11.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
11.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
12. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
BT138X_SER_D_E_3
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 03 — 10 March 2008
11 of 12
NXP Semiconductors
BT138X series D and E
12 A four-quadrant triacs, sensitive gate
13. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
11
11.1
11.2
11.3
11.4
12
13
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 5
Isolation characteristics . . . . . . . . . . . . . . . . . . 6
Static characteristics. . . . . . . . . . . . . . . . . . . . . 6
Dynamic characteristics . . . . . . . . . . . . . . . . . . 7
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10
Legal information. . . . . . . . . . . . . . . . . . . . . . . 11
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Contact information. . . . . . . . . . . . . . . . . . . . . 11
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2008.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 10 March 2008
Document identifier: BT138X_SER_D_E_3
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