datasheet for FDFMA2P853T by Fairchild Semiconductors

datasheet for FDFMA2P853T by Fairchild Semiconductors
FDFMA2P853T
tm
Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
–20 V, –3.0 A, 120 mΩ
Features
General Description
MOSFET:
This device is designed specifically as a single package solution
for the battery charge switch in cellular handset and other
ultra-portable applications. It features a MOSFET with low
on-state resistance and an independently connected low forward
voltage schottky diode for minimum conduction losses.
̈ Max rDS(on) = 120 mΩ at VGS = –4.5 V, ID = –3.0 A
̈ Max rDS(on) = 160 mΩ at VGS = –2.5 V, ID = –2.5 A
̈ Max rDS(on) = 240 mΩ at VGS = –1.8 V, ID = –1.0 A
The MicroFET 2x2 Thin package offers exceptional thermal
performance for it’s physical size and is well suited to linear
mode applications.
Schottky:
̈ VF < 0.46 V @ 500 mA
̈ Low profile - 0.55 mm maximum - in the new package
MicroFET 2x2 Thin
̈ RoHS Compliant
̈ Free from halogenated compounds and antimony
oxides
Pin 1
NC
A
MicroFET 2X2 Thin
C
G
D
A 1
6 C
NC 2
5 G
D 3
4 S
S
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
Drain Current -Continuous
ID
TA = 25 °C
(Note 1a)
-Pulsed
PD
Ratings
–20
Units
V
±8
V
–3.0
–6
Power Dissipation
TA = 25 °C
(Note 1a)
1.4
Power Dissipation
TA = 25 °C
(Note 1b)
0.7
A
W
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +150
°C
VRRM
Schottky Repetitive Peak Reverse Voltage
30
V
IO
Schottky Average Forward Current
1
A
Thermal Characteristics
RθJA
Thermal Resistance, Junction to Ambient
(Note 1a)
86
RθJA
Thermal Resistance, Junction to Ambient
(Note 1b)
173
RθJA
Thermal Resistance, Junction to Ambient
(Note 1c)
86
RθJA
Thermal Resistance, Junction to Ambient
(Note 1d)
140
°C/W
Package Marking and Ordering Information
Device Marking
53
Device
FDFMA2P853T
©2008 Fairchild Semiconductor Corporation
FDFMA2P853T Rev.B1
Package
MicroFET 2x2 Thin
1
Reel Size
7 ’’
Tape Width
8 mm
Quantity
3000 units
www.fairchildsemi.com
FDFMA2P853T Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
December 2008
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = –250 µA, VGS = 0 V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = –250 µA, referenced to 25 °C
–20
V
–12
mV /°C
IDSS
Zero Gate Voltage Drain Current
VDS = –16 V, VGS = 0 V
–1
µA
IGSS
Gate to Source Leakage Current
VGS = ±8 V, VDS = 0 V
±100
nA
–1.3
V
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = –250 µA
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = –250 µA, referenced to 25 °C
rDS(on)
gFS
Static Drain to Source On Resistance
Forward Transconductance
–0.4
–0.7
2
mV/°C
VGS = –4.5 V, ID = –3.0 A
90
120
VGS = –2.5 V, ID = –2.5 A
120
160
VGS = –1.8 V, ID = –1.0 A
172
240
VGS = –4.5 V, ID = –3.0 A
TJ = 125 °C
118
160
VDS = –5 V, ID = –3.0 A
7
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = –10 V, VGS = 0 V,
f = 1.0 MHz
435
pF
80
pF
45
pF
Switching Characteristics
td(on)
Turn-On Delay Time
9
18
ns
tr
Rise Time
11
19
ns
td(off)
Turn-Off Delay Time
15
27
ns
tf
Fall Time
6
12
ns
4
6
Qg(TOT)
Total Gate Charge
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
VDD = –10 V, ID = –1.0 A
VGS = –4.5 V, RGEN = 6 Ω
VDD= –10 V, ID = –3.0 A
VGS = –4.5 V
nC
0.8
nC
0.9
nC
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain-Source Diode Forward Current
VSD
Source to Drain Diode Forward Voltage VGS = 0 V, IS = –1.1 A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
–1.1
(Note 2)
IF = –3.0 A, di/dt = 100 A/µs
–0.8
–1.2
A
V
17
ns
6
nC
Schottky Diode Characteristics
IR
Reverse Leakage
VR = 5 V
IR
Reverse Leakage
VR = 20 V
VF
VF
Forward Voltage
Forward Voltage
FDFMA2P853T Rev.B1
IF = 500 mA
IF = 1 A
2
TJ = 25 °C
9.9
50
µA
TJ = 125 °C
2.3
10
mA
TJ = 25 °C
9.9
100
µA
TJ = 85 °C
0.3
1
mA
TJ = 125 °C
2.3
10
mA
TJ = 25 °C
0.4
0.46
V
TJ = 125 °C
0.3
0.35
V
TJ = 25 °C
0.5
0.55
V
TJ = 125 °C
0.49
0.54
V
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FDFMA2P853T Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
Electrical Characteristics TJ = 25 °C unless otherwise noted
Notes:
1: RθJA is determined with the device mounted on a 1 in2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθJA is determined by the
user's board design.
(a) MOSFET RθJA = 86 oC/W when mounted on a 1 in2 pad of 2 oz copper, 1.5 ” x 1.5 ” x 0.062 ” thick PCB.
(b) MOSFET RθJA = 173 oC/W when mounted on a minimum pad of 2 oz copper.
(c) Schottky RθJA = 86 oC/W when mounted on a 1 in2 pad of 2 oz copper, 1.5 ” x 1.5 ” x 0.062 ” thick PCB.
(d) Schottky RθJA = 140 oC/W when mounted on a minimum pad of 2 oz copper.
a)86 oC/W when
mounted on a 1
in2 pad of 2 oz
copper.
b)173 oC/W when
mounted
on
a
minimum pad of 2
oz copper.
c)86 oC/W when
mounted on a 1
in2 pad of 2 oz
copper.
d)140 oC/W when
mounted on a
minimum pad of 2
oz copper.
2: Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%.
FDFMA2P853T Rev.B1
3
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FDFMA2P853T Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
Electrical Characteristics TA = 25 °C unless otherwise noted
6
3.0
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
-ID, DRAIN CURRENT (A)
VGS = -4.5 V
5
VGS = -2 V
VGS = -3.5 V
4
3
VGS = -1.8 V
VGS = -3 V
VGS = -2.5 V
2
1
PULSE DURATION = 300 µs
DUTY CYCLE = 2% MAX
VGS = -1.5 V
0
0
0.5
1.0
1.5
2.0
2.5
PULSE DURATION = 300 µs
DUTY CYCLE = 2%MAX
2.5
VGS = -1.5 V
VGS = -1.8 V
2.0
VGS = -2.5 V
1.5
1.0
0
VGS = -4.5 V
1
2
3
4
5
6
-ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.4
0.28
ID = -3.0 A
VGS = -4.5 V
rDS(on), DRAIN TO
1.3
1.2
1.1
1.0
0.9
SOURCE ON-RESISTANCE ( Ω)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
VGS = -3.5 V
VGS = -3 V
0.5
-VDS, DRAIN TO SOURCE VOLTAGE (V)
PULSE DURATION = 300 µs
DUTY CYCLE = 2% MAX
0.24
ID = -1.5 A
0.20
0.16
TJ = 125 oC
0.12
0.08
TJ = 25 oC
0.8
-50
-25
0
25
50
75
100
125
0.04
150
0
TJ, JUNCTION TEMPERATURE ( oC)
2
4
6
8
10
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
Figure 3. Normalized On- Resistance
vs Junction Temperature
10
6
PULSE DURATION = 300 µs
DUTY CYCLE = 2% MAX
5
-IS, REVERSE DRAIN CURRENT (A)
-ID, DRAIN CURRENT (A)
VGS = -2 V
VDS = -5 V
4
3
2
TJ = 125 oC
TJ = 25 oC
1
TJ = -55 oC
0
VGS = 0 V
1
TJ = 125 oC
0.1
TJ = 25 oC
0.01
TJ = -55 oC
0.001
0.0001
0
0.5
1.0
1.5
2.0
2.5
0
0.4
0.6
0.8
1.0
1.2
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
Figure 5. Transfer Characteristics
FDFMA2P853T Rev.B1
0.2
-VSD, BODY DIODE FORWARD VOLTAGE (V)
-VGS, GATE TO SOURCE VOLTAGE (V)
4
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FDFMA2P853T Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
Typical Characteristics TJ = 25 °C unless otherwise noted
700
ID = -3.0 A
600
4
VDD = -5 V
500
CAPACITANCE (pF)
-VGS, GATE TO SOURCE VOLTAGE (V)
5
3
VDD = -10 V
2
VDD = -15 V
Ciss
400
300
200
f = 1 MHz
VGS = 0 V
Coss
1
100
0
0
1
2
3
4
Crss
0
0
5
4
8
12
16
20
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain
to Source Voltage
10
10
IF, FORWARD CURRENT (A)
-ID, DRAIN CURRENT (A)
100 us
1 ms
1
10 ms
THIS AREA IS
LIMITED BY rDS(on)
0.1
100 ms
SINGLE PULSE
TJ = MAX RATED
1s
10 s
DC
RθJA = 173 oC/W
TJ = 125 oC
1
0.1
TJ = 25 oC
0.01
TA = 25 oC
0.01
0.1
1
0.001
50
10
0
0.2
-VDS, DRAIN to SOURCE VOLTAGE (V)
0.6
0.8
VF, FORWARD VOLTAGE (V)
Figure 9. Forward Bias Safe
Operating Area
Figure 10. Schottky Diode Foward Voltage
10
200
P( PK) , PEAK TRANSIENT POWER (W)
IR, REVERSE LEAKAGE CURRENT (mA)
0.4
TJ = 125 oC
1
TJ = 85 oC
0.1
0.01
TJ = 25 oC
0.001
0
4
8
12
16
20
VR, REVERSE VOLTAGE (V)
VGS = -10 V
SINGLE PULSE
RθJA = 173 oC/W
10
TA = 25 oC
1
0.5
-4
10
-3
10
-2
10
-1
10
1
100
10
1000
t, PULSE WIDTH (sec)
Figure 11. Schottky Diode Reverse Current
FDFMA2P853T Rev.B1
100
Figure 12. Single Pulse Maximum
Power Dissipation
5
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FDFMA2P853T Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
Typical Characteristics TJ = 25 °C unless otherwise noted
2
NORMALIZED THERMAL
IMPEDANCE, ZθJA
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
SINGLE PULSE
o
RθJA = 173 C/W
0.01
-4
10
-3
10
-2
10
-1
10
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction to Ambient Transient Thermal Response Curve
FDFMA2P853T Rev.B1
6
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FDFMA2P853T Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
Typical Characteristics TJ = 25 °C unless otherwise noted
FDFMA2P853T Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
Dimensional Outline and Pad Layout
FDFMA2P853T Rev.B1
7
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications may
change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make changes at any time without notice to
improve design.
No Identification Needed
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Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I37
FDFMA2P853T Rev.B1
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FDFMA2P853T Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
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