1MBI2400VD-170E

1MBI2400VD-170E
http://www.fujielectric.com/products/semiconductor/
1MBI2400VD-170E
IGBT Modules
IGBT MODULE (V series)
1700V / 2400A / 1 in one package
Features
High speed switching
Voltage drive
Low Inductance module structure
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplifier
Uninterruptible Power Supply
Industrial machines, such as Welding machines
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)
Items
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Symbols
VCES
VGES
Conditions
Ic
Continuous
Icp
-Ic
-Ic pulse
PC
Tj
1ms
Collector power dissipation
Junction temperature
Operating junction temperature
Tjop
(under switching conditions)
Tstg
Storage temperature
Isolation voltage Between terminal and copper base (*1) Viso
Mounting
Main Terminals
Screw torque (*2)
Sense Terminals
1ms
1 device
AC : 1min.
M6
M8
M4
Tc=25°C
Tc=100°C
Maximum ratings
1700
±20
3600
2400
4800
2400
4800
17640
175
Units
V
V
150
°C
-40 ~ +150
4000
5.75
10
2.5
A
W
VAC
Nm
Note *1: All terminals should be connected together when isolation test will be done.
Note *2: Recommendable Value :
Mounting 4.25~5.75 Nm (M6) , Main Terminals 8~10 Nm (M8) , Sense Terminals 1.7~2.5 Nm (M4)
1
7787
FEBRUARY 2013
1MBI2400VD-170E
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Items
Symbols
Conditions
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
ICES
IGES
VGE(th)
VGE = 0V, VCE = 1700V
VCE = 0V, VGE=±20V
VCE = 20V, Ic = 2400mA
VCE(sat)
(main terminal)
Collector-Emitter saturation voltage
VCE(sat)
(chip)
Internal gate resistance
Input capacitance
Turn-on
Turn-off
Int Rg
Cies
ton
tr
toff
tf
VCE=10V, VGE=0V, f=1MHz
VCC = 900V, Ic =2400A
Lm = 46nH, VGE=±15V, Tj =125°C
Rgon = 0.9 Ω
Rgoff = 0.39 Ω
VF
(main terminal)
Forward on voltage
VF
(chip)
Reverse recovery
Lead resistance, terminal-chip
trr
R lead
VGE=15V
Ic = 2400A
Tj =25°C
Tj =125°C
Tj =150°C
Tj =25°C
Tj =125°C
Tj =150°C
VGE=0V
IF = 2400A
IF = 2400A,Tj =125°C
Tj =25°C
Tj =125°C
Tj =150°C
Tj =25°C
Tj =125°C
Tj =150°C
Characteristics
min.
typ.
max.
1.0
4800
6.0
6.5
7.0
2.21
2.49
2.61
2.66
2.00
2.25
2.40
2.45
0.73
238
2.30
0.78
2.22
0.43
2.02
2.40
2.22
2.19
1.80
2.15
2.00
1.98
0.50
0.089
-
Units
mA
nA
V
V
Ω
nF
µs
V
µs
mΩ
Thermal resistance characteristics
Items
Symbols
Thermal resistance
Rth(j-c)
Contact thermal resistance (*3)
Rth(c-f)
Conditions
IGBT
FWD
with Thermal Compound
Note *3: This is the value which is defined mounting on the additional cooling fin with thermal compound.
2
Characteristics
min.
typ.
max.
0.0085
0.0150
0.004
-
Units
°C/W
1MBI2400VD-170E
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage (typ.)
Collector current vs. Collector-Emitter voltage (typ.)
Tj=25℃,chip
Tj= 150°C, chip
5000
5000
VGE=20V
15V
VGE=20V
12V
4000
Collector current : Ic [A]
4000
Collector current : Ic [A]
15V
3000
10V
2000
12V
3000
10V
2000
1000
1000
8V
8V
0
0
0.0
1.0
2.0
3.0
4.0
5.0
0.0
1.0
2.0
4.0
5.0
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Collector current vs. Collector-Emitter voltage (typ.)
Tj=25℃,chip
VGE=+15V,chip
5000
3.0
10
Tj=125°C
Tj=150°C
3000
2000
1000
0
0.0
1.0
2.0
3.0
4.0
8
6
4
0
5.0
Ic=4800A
Ic=2400A
Ic=1200A
2
5
10
25
Dynamic Gate charge (typ.)
Tj= 25°C
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25°C
25
1000
100
Cres
Coes
10
10
20
30
800
VCE
15
VGE
600
10
400
5
200
0
0
-5
-200
-10
-400
-15
-600
-20
-800
-25
0
1000
20
Cies
Gate-Emitter voltage:VGE [V]
Capacitance : Cies, Coes, Cres [ nF ]
20
Gate - Emitter voltage : VGE [ V ]
Collector-Emitter voltage : VCE [V]
1
15
-30
-20
-10
0
10
20
Gate charge : Qg [ uC ]
Collector-Emitter voltage : VCE [V]
3
30
-1000
Collectotr-Emitter voltage:VCE [V]
4000
Collector current : Ic [A]
Collector - Emitter voltage : VCE [ V ]
Tj=25°C
1MBI2400VD-170E
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Switching time vs. Collector current (typ.)
Switching time vs. Gate resistance (typ.)
Vcc=900V, VGE=±15V, Rgon=0.9Ω, Rgoff=0.39Ω
Vcc=900V, Ic=2400A,VGE=±15V
10.0
Tj=125deg.C
Tj=150deg.C
3.5
3.0
ton
2.5
toff
2.0
1.5
tr
1.0
8.0
500
ton
6.0
5.0
tr
4.0
3.0
2.0
1.0
tf
0
0.0
1000 1500 2000 2500 3000 3500 4000
tf
0
1
Switching loss vs. Collector current (typ.)
5
6
7
8
4500
Tj=125deg.C
Tj=150deg.C
1800
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
4
Vcc=900V, Ic=2400A,VGE=±15V
2000
Tj=125deg.C
Tj=150deg.C
4000
Eoff
1600
1400
3000
Eon
1200
1000
2500
Eoff
2000
Err
800
Eon
3500
1500
600
1000
400
200
0
500 1000 1500 2000 2500 3000 3500 4000
Collector current : Ic [ A ] , Forward current : IF [ A ]
±VGE=15V, Tj = 150°C / chip
5000
4000
3000
2000
1000
400
800
1200
1600
Collector - Emitter voltage : VCE [ V ]
0
1
2
3
4
5
Gate resistance : Rg [ Ω ]
6000
0
Err
500
0
Reverse bias safe operating area (max.)
Collector current : Ic [ A ]
3
Switching loss vs. Gate resistance (typ.)
Vcc=900V, VGE=±15V, Rgon=0.9Ω, Rgoff=0.39Ω
0
2
Gate resistance : Rg [ Ω ]
Collector current : Ic [ A ]
0
toff
7.0
0.5
0.0
Tj=125deg.C
Tj=150deg.C
9.0
Switching time : ton, tr, toff, tf [ us ]
Switching time : ton, tr, toff, tf [ us ]
4.0
2000
4
6
7
8
1MBI2400VD-170E
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Forward current vs. Forward on voltage (typ.)
Reverse recovery characteristics (typ.)
chip
Vcc=900V, VGE=±15V, Rgon=0.9Ω
1.4
2800
Tj=150℃
Reverse recovery current : Irr [ A ]
Tj=25℃
Forward current : IF [ A ]
4000
Tj=125℃
3000
2000
1000
2400
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.6
1200
trr
800
0.4
0.2
400
0
0.0
500 1000 1500 2000 2500 3000 3500 4000
3.5
Forward current : IF [ A ]
FWD safe operating area (max.)
Transient thermal resistance (max.)
Tj=150°C / sence terminals
6000
0.1000
Thermal resistanse : Rth(j-c) [ �C/W ]
Reverse recovery current : Irr [ A ]
1.0
0.8
1600
Forward on voltage : VF [ V ]
5000
4000
Pvmax=2.4MW
3000
2000
1000
0
1.2
Irr
2000
0
0
Tj=125deg.C
Tj=150deg.C
Reverse recovery time : trr [ us ]
5000
0
FWD
0.0100
IGBT
0.0010
t
4
−

Zth = ∑ rn ⋅ 1 − e τ n

n =1

0.0001
0.001
200 400 600 800 1000 1200 1400 1600 1800
Collector-Emitter voltage : VCE [ V ]
0.010




0.100
Pulse width : Pw [ sec ]
5
IGBT
FWD
r1
0.00206
0.00262
r2
0.00259
0.00509
r3
0.00210
0.00403
r4
0.00174
0.00326
τ1
0.0084
0.0048
τ2
0.0455
0.0475
τ3
0.0622
0.0565
τ4
0.0828
0.0725
1.000
1MBI2400VD-170E
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Outline Drawings, mm
Equivalent Circuit Schematic
main collector
sense collector
gate
sense emitter
main emitter
6
1MBI2400VD-170E
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
WARNING
1.This Catalog contains the product specifications, characteristics, data, materials, and structures as of February 2013.
The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sure to
obtain the latest specifications.
2.All applications described in this Catalog exemplify the use of Fuji’s products for your reference only. No right or license, either express or implied,
under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed) granted. Fuji
Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other’s
intellectual property rights which may arise from the use of the applications described herein.
3.Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When
using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from
causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design fail-safe, flame retardant,
and free of malfunction.
4.The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability
requirements.
• Computers • OA equipment • Communications equipment (terminal devices) • Measurement equipment
• Machine tools • Audiovisual equipment • Electrical home appliances • Personal equipment • Industrial robots etc.
5.If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is
imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such
as a backup system to prevent the equipment from malfunctioning even if a Fuji’s product incorporated in the equipment becomes faulty.
• Transportation equipment (mounted on cars and ships) • Trunk communications equipment
• Traffic-signal control equipment • Gas leakage detectors with an auto-shut-off feature
• Emergency equipment for responding to disasters and anti-burglary devices• Safety devices
• Medical equipment
6. D
o not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without
limitation).
• Space equipment • Aeronautic equipment • Nuclear control equipment
• Submarine repeater equipment
7. C
opyright ©1996-2013 by Fuji Electric Co., Ltd. All rights reserved.
No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Co., Ltd.
8.If you have any question about any portion in this Catalog, ask Fuji Electric Co., Ltd. or its sales agents before using the product.
Neither Fuji Electric Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions set forth
herein.
7
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