IRFN350 JANTX2N7227U POWER MOSFET SURFACE MOUNT(SMD-1)

IRFN350 JANTX2N7227U POWER MOSFET SURFACE MOUNT(SMD-1)
PD-91551D
POWER MOSFET
SURFACE MOUNT(SMD-1)
IRFN350
JANTX2N7227U
JANTXV2N7227U
REF:MIL-PRF-19500/592
400V, N-CHANNEL
®
Product Summary
HEXFET MOSFET TECHNOLOGY
Part Number
RDS(on)
ID
IRFN350
0.315 Ω
14A
HEXFET® MOSFET technology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry design achieves very low onstate resistance combined with high transconductance.
HEXFET transistors also feature all of the wellestablished advantages of MOSFETs, such as voltage
control, very fast switching, ease of paralleling and
electrical parameter temperature stability. They are wellsuited for applications such as switching power supplies,
motor controls, inverters, choppers, audio amplifiers,
high energy pulse circuits, and virtually any application
where high reliability is required. The HEXFET
transistor’s totally isolated package eliminates the need
for additional isolating material between the device and
the heatsink. This improves thermal efficiency and
reduces drain capacitance.
SMD-1
Features:
n
n
n
n
n
n
n
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Electrically Isolated
Surface Mount
Dynamic dv/dt Rating
Light-weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temperature
Weight
Units
14
9.0
56
150
1.2
±20
700
14
15
4.0
-55 to 150
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (for 5 sec)
2.6 (Typical)
g
For footnotes refer to the last page
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1
12/12/07
IRFN350, JANTX2N7227U, JANTXV2N7227U
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
BVDSS
Parameter
Min
Drain-to-Source Breakdown Voltage
400
—
—
V
VGS = 0V, ID = 1.0mA
—
0.46
—
V/°C
Reference to 25°C, ID = 1.0mA
—
—
2.0
6.0
—
—
—
—
—
—
—
—
0.315
0.415
4.0
—
25
250
∆BV DSS /∆T J Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
g fs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Typ Max Units
IGSS
IGSS
Qg
Q gs
Q gd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.0
100
-100
110
18
65
35
190
170
130
—
Ciss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
2600
680
250
—
—
—
Ω
V
S
µA
nA
nC
Test Conditions
VGS = 10V, ID = 9.0A
Ã
VGS = 10V, ID = 14A
VDS = VGS, ID = 250µA
VDS > 15V, IDS = 9.0A Ã
VDS= 320V ,VGS = 0V
VDS = 320V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =10V, ID = 14A
VDS = 200V
VDD = 200V, ID = 14A,
VGS =10V, RG = 2.35Ω
ns
nH
pF
Measured from the center of drain
pad to center of source pad.
VGS = 0V, VDS = 25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS
ISM
VSD
trr
Q RR
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ton
Forward Turn-On Time
—
—
—
—
—
—
—
—
—
—
14
56
1.7
1200
11
Test Conditions
A
V
ns
µC
Tj = 25°C, IS = 14A, VGS = 0V Ã
Tj = 25°C, IF = 14A, di/dt ≤ 100A/µs
VDD ≤ 30V Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJ-PCB
Junction-to-Case
Junction-to-PC board
Min Typ Max
—
—
—
3.0
0.83
—
Units
°C/W
Test Conditions
Soldered to a copper-clad PC board
Note: Corresponding Spice and Saber models are available on International Rectifier Website.
For footnotes refer to the last page
2
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IRFN350, JANTX2N7227U, JANTXV2N7227U
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRFN350, JANTX2N7227U, JANTXV2N7227U
13a & b
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 8. Maximum Safe Operating Area
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IRFN350, JANTX2N7227U, JANTXV2N7227U
V DS
VGS
RG
RD
D.U.T.
+
-V DD
V GS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
VDS
90%
Fig 9. Maximum Drain Current Vs.
Case Temperature
10%
VGS
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFN350, JANTX2N7227U, JANTXV2N7227U
15V
L
VDS
D.U.T.
RG
V GS
20V
IAS
DRIVER
+
- VDD
A
0.01Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I AS
Current Regulator
Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
QG
12V
0
.2µF
.3µF
10 V
QGS
QGD
+
V
- DS
VGS
VG
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
6
D.U.T.
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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IRFN350, JANTX2N7227U, JANTXV2N7227U
Footnotes:
À Repetitive Rating; Pulse width limited by
maximum junction temperature.
Á VDD = 50V, starting TJ = 25°C, L= 7.1mH
Peak IL = 14A, VGS = 10V
 ISD ≤ 14A, di/dt ≤ 145A/µs,
VDD ≤ 400V, TJ ≤ 150°C
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Case Outline and Dimensions — SMD-1
PAD ASSIGNMENTS
1- DRAIN
2- GATE
3- SOURCE
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 12/2007
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