Photodiodes, Alternate Source

Photodiodes, Alternate Source
Alternate Source/
Second Source Photodiodes
VTD205H
(SFH205 INDUSTRY EQUIVALENT)
PACKAGE DIMENSIONS inch (mm)
CASE 60 TO-92 TYPE (ROUND LENS)
CHIP ACTIVE AREA: .011 in2 (7.41 mm2)
PRODUCT DESCRIPTION
ABSOLUTE MAXIMUM RATINGS
Large area planar silicon photodiode in a cast epoxy
sidelooker, similar in outline to the TO-92 package.
The package material filters out all visible light but
passes infrared. These diodes exhibit low dark
current under reverse bias and fast speed of
response.
Storage Temperature:
Operating Temperature:
-40°C to 100°C
-40°C to 100°C
RoHS Compliant
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C
SYMBOL
ISC
TC ISC
VOC
CHARACTERISTIC
Short Circuit Current
940 nm, H = 0.5 mW/cm2
ISC Temperature Coefficient
2856 K
Open Circuit Voltage
940 nm, H = 0.5 mW/cm2
VOC Temperature Coefficient
2856 K
ID
Dark Current
H = 0, VR = 10 V
CJ
TC VOC
VTD205H
TEST CONDITIONS
UNITS
Min.
Typ.
Max.
15
25
µA
.20
%/°C
250
350
mV
-2.6
2
mV/°C
30
nA
Junction Capacitance
H = 0, VR = 0 v, 1 MHz
72
pF
tR/tF
Rise/Fall Time @ RL = 50Ω
VR = 5 V, 850 nm
20
nsec
SR
Sensitivity
@ Peak
λrange
Spectral Application Range
λp
Spectral Response - Peak
VBR
Breakdown Voltage
θ1/2
Angular Resp.-50% Resp. Pt.
Excelitas Technologies, 22001 Dumberry, Vaudreuil, Canada J7V 8P7
0.6
800
20
nm
925
nm
50
V
±60
Degrees
Phone: 877-734-6786 Fax: 450-424-3413
75
A/W
1100
www.excelitas.com
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