datasheet for MMSTA05 by Diodes Inc.

datasheet for MMSTA05 by Diodes Inc.
MMSTA05/MMSTA06
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
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•
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•
•
•
Epitaxial Planar Die Construction
Complementary PNP Type Available
(MMSTA55/MMSTA56)
Ideal for Medium Power Amplification and Switching
Ultra-Small Surface Mount Package
Lead Free/RoHS Compliant (Note 2)
"Green" Device (Notes 3 and 4)
SOT-323
A
C
B C
B
E
G
Mechanical Data
•
•
•
•
•
•
•
•
•
•
H
Case: SOT-323
Case Material: Molded Plastic, "Green" Molding
Compound, Note 4. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over
Alloy 42 leadframe).
MMSTA05 Marking K1H, K1G (See Page 3)
MMSTA06 Marking K1G (See Page 3)
Order & Date Code Information: See Page 3
Weight: 0.006 grams (approximate)
Maximum Ratings
K
M
J
D
L
E
C
Dim
Min
Max
A
0.25
0.40
B
1.15
1.35
C
2.00
2.20
D
0.65 Nominal
E
0.30
0.40
G
1.20
1.40
H
1.80
2.20
J
0.0
0.10
K
0.90
1.00
L
0.25
0.40
M
0.10
0.18
α
0°
8°
All Dimensions in mm
E
B
@TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 1)
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Symbol
VCBO
VCEO
VEBO
IC
Pd
RθJA
Tj, TSTG
MMSTA05
60
60
MMSTA06
80
80
Unit
V
V
V
mA
mW
°C/W
°C
4.0
500
200
625
-55 to +150
@TA = 25°C unless otherwise specified
Symbol
MMSTA05
MMSTA06
MMSTA05
MMSTA06
Min
Max
Unit
⎯
V
IC = 100μA, IE = 0
⎯
V
IC = 1.0mA, IB = 0
⎯
V
IE = 100μA, IC = 0
VCB = 60V, IE = 0
VCB = 80V, IE = 0
VCE = 60V, IBO = 0V
VCE = 80V, IBO = 0V
V(BR)EBO
60
80
60
80
4.0
MMSTA05
MMSTA06
ICBO
⎯
100
nA
MMSTA05
MMSTA06
ICES
⎯
100
nA
hFE
100
⎯
⎯
VCE(SAT)
VBE(SAT)
⎯
⎯
0.25
1.2
V
V
fT
100
⎯
MHz
V(BR)CBO
V(BR)CEO
Test Condition
ON CHARACTERISTICS (Note 5)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
Notes:
1.
2.
3.
4.
5.
IC = 10mA, VCE = 1.0V
IC = 100mA, VCE = 1.0V
IC = 100mA, IB = 10mA
IC = 100mA, VCE = 1.0V
VCE = 2.0V, IC = 10mA, f = 100MHz
Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
No purposefully added lead.
Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
Short duration pulse test used to minimize self-heating effect.
DS30168 Rev. 9 - 2
1 of 3
www.diodes.com
MMSTA05/MMSTA06
© Diodes Incorporated
10
ICBO, COLLECTOR-BASE CURRENT (nA)
PD, POWER DISSIPATION (mW)
200
150
100
50
50
75 100 125 150 175 200
TA, AMBIENT TEMPERATURE (°C)
Fig. 1, Max Power Dissipation vs. Ambient Temperature
50
75
100
125
TA, AMBIENT TEMPERATURE (ºC)
Fig. 2 Typical Collector-Cutoff Current vs. Ambient Temperature
25
2.0
0.500
1.8
0.450
VCE(SAT), COLLECTOR TO EMITTER
SATURATION VOLTAGE (V)
VCE, COLLECTOR EMITTER VOLTAGE (V)
0.1
0.01
25
0
0
1
1.6
1.4
IC = 30mA
1.2
IC = 10mA
1.0
0.8
0.6
IC = 100mA
0.4
IC = 1mA
0.400
0.350
0.300
TA = 25°C
0.250
T A = 150°C
0.200
0.150
0.100
0.050
0.2
TA = -50°C
0
0.001
0
1,000
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 4 Collector Emitter Saturation Voltage vs. Collector Current
1
1
0.1
10
100
IB, BASE CURRENT (mA)
Fig. 3 Typical Collector Saturation Region
0.01
1.0
VBE(ON), BASE EMITTER VOLTAGE (V)
10,000
hFE, DC CURRENT GAIN
IC
= 10
IB
1,000
100
10
1
VCE = 5V
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1
0.1
10
1,000
100
IC, COLLECTOR CURRENT (mA)
Fig. 5, DC Current Gain vs. Collector Current
DS30168 Rev. 9 - 2
1
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 6, Base Emitter Voltage vs. Collector Current
2 of 3
www.diodes.com
MMSTA05/MMSTA06
© Diodes Incorporated
fT, GAIN BANDWIDTH PRODUCT (MHz)
1,000
100
10
1
10
IC, COLLECTOR CURRENT (mA)
Fig. 7, Gain Bandwidth Product vs Collector Current
1
Ordering Information (Note 4 and 6)
Device
MMSTA05-7-F
MMSTA06-7-F
Notes:
Packaging
SOT-323
SOT-323
Shipping
3000/Tape & Reel
3000/Tape & Reel
6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
YM
K1x
Date Code Key
Year
1998
K1x = Product Type Marking Code, ex: K1H = MMSTA05
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
1999
2000
2001
2002
2003
2004
K
L
M
N
P
R
2005
S
2006
T
Code
J
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Code
1
2
3
4
5
6
7
2007
U
Aug
8
2008
V
Sep
9
2009
W
Oct
O
2010
X
2011
Y
Nov
N
2012
Z
Dec
D
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DS30168 Rev. 9 - 2
3 of 3
www.diodes.com
MMSTA05/MMSTA06
© Diodes Incorporated
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