H5N2503P Datasheet

H5N2503P Datasheet
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H5N2503P
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1105-0200
(Previous: ADE-208-1374A)
Rev.2.00
Sep 07, 2005
Features
•
•
•
•
•
Low on-resistance: R DS (on) = 0.04 Ω typ.
Low leakage current: IDSS = 1 µA max (at VDS = 250 V)
High speed switching: tf = 190 ns typ (at VGS = 10 V, VDD = 125 V, ID = 25 A)
Low gate charge: Qg = 140 nC typ (at VDD = 200 V, VGS = 10 V, ID = 50 A)
Avalanche ratings
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
D
1. Gate
2. Drain (Flange)
3. Source
G
1
Rev.2.00 Sep 07, 2005 page 1 of 6
2
3
S
H5N2503P
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Symbol
VDSS
Value
250
Unit
V
VGSS
ID
±30
50
V
A
200
50
A
A
200
50
A
A
150
0.833
W
°C/W
150
–55 to +150
°C
°C
Gate to source voltage
Drain current
Note 1
Drain peak current
Body-drain diode reverse drain current
ID (pulse)
IDR
Body-drain diode reverse drain peak current
Avalanche current
IDR (pulse)
Note 3
IAP
Note 1
Note 2
Channel dissipation
Channel to case thermal Impedance
Pch
θ ch-c
Channel temperature
Storage temperature
Tch
Tstg
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. Tch ≤ 150°C
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Symbol
V (BR) DSS
Min
250
Typ
—
Max
—
Unit
V
Test Conditions
ID = 10 mA, VGS = 0
IGSS
IDSS
—
—
—
—
±0.1
1
µA
µA
VGS = ±30 V, VDS = 0
VDS = 250 V, VGS = 0
VGS (off)
RDS (on)
3.0
—
—
0.040
4.0
0.055
V
Ω
VDS = 10 V, ID = 1 mA
Note 4
ID = 25 A, VGS = 10 V
Forward transfer admittance
Input capacitance
|yfs|
Ciss
25
—
40
5150
—
—
S
pF
Output capacitance
Reverse transfer capacitance
Coss
Crss
—
—
620
105
—
—
pF
pF
ID = 25 A, VDS = 10 V
VDS = 25 V
VGS = 0
f = 1 MHz
Turn-on delay time
Rise time
td (on)
tr
—
—
58
210
—
—
ns
ns
Turn-off delay time
Fall time
td (off)
tf
—
—
220
190
—
—
ns
ns
Total gate charge
Gate to source charge
Qg
Qgs
—
—
140
25
—
—
nC
nC
Gate to drain charge
Body-drain diode forward voltage
Qgd
VDF
—
—
60
1.0
—
1.5
nC
V
IF = 50 A, VGS = 0
trr
Qrr
—
—
210
1.8
—
—
ns
µC
IF = 50 A, VGS = 0
diF/dt = 100 A/µs
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state resistance
Body-drain diode reverse recovery time
Body-drain diode reverse recovery charge
Note:
4. Pulse test
Rev.2.00 Sep 07, 2005 page 2 of 6
ID = 25 A
VGS = 10 V
RL = 5 Ω
Rg = 10 Ω
VDD = 200 V
VGS = 10 V
ID = 50 A
Note 4
H5N2503P
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
1000
ID (A)
300
150
Drain Current
Channel Dissipation
Pch (W)
200
100
50
0
0
50
100
150
Case Temperature
200
100
PW
DC
30
10
80
m
s(
1s
(T
c=
ho
t)
25
°C
)
100
300
1000
VDS (V)
Typical Transfer Characteristics
100
VDS = 10 V
Pulse Test
6V
60
80
60
5.5 V
40
5V
20
Drain Current
Drain Current
ion
10
Drain to Source Voltage
Pulse Test
7V
6.5 V
at
=
Operation in
1 this area is
limited by RDS(on)
0.3
Ta = 25°C
0.1
1
3
10
30
Tc (°C)
ID (A)
ID (A)
10 V
8V
er
3
Typical Output Characteristics
100
Op
10
µ
0µ s
1m
s
s
10
40
25°C
Tc = 75°C
20
–25°C
VGS = 4.5 V
0
0
0
4
8
12
20
0
VDS (V)
2
4
6
10
8
Gate to Source Voltage
VGS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Static Drain to Source on State Resistance
vs. Drain Current
5
200
Drain to Source on State Resistance
RDS(on) (mΩ)
Drain to Source Saturation Voltage
VDS(on) (V)
Drain to Source Voltage
16
Pulse Test
4
3
ID = 50 A
2
25 A
1
10 A
0
0
4
8
12
Gate to Source Voltage
Rev.2.00 Sep 07, 2005 page 3 of 6
16
20
VGS (V)
Pulse Test
100
50
VGS = 10 V, 15 V
20
10
1
2
5
10
Drain Current
20
50
ID (A)
100
Static Drain to Source on State Resistance
vs. Temperature
200
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance
RDS(on) (mΩ)
H5N2503P
Pulse Test
VGS = 10 V
160
120
ID = 50 A
80
25 A
10 A
40
0
–40
0
40
80
120
Case Temperature
160
100
50
Tc = –25°C
20
10
5
25°C
2
75°C
1
0.5
VDS = 10 V
Pulse Test
0.2
0.2
500
20000
Capacitance C (pF)
Reverse Recovery Time trr (ns)
50000
200
100
50
di / dt = 100 A / µs
VGS = 0, Ta = 25°C
0.3
1
3
10
Reverse Drain Current
30
2000
1000
Coss
500
200
Crss
50
100
0
20
200
8
100
4
VDD = 200 V
100 V
50 V
0
0
40
80
Gate Charge
Rev.2.00 Sep 07, 2005 page 4 of 6
120
160
Qg (nC)
0
200
VGS (V)
16
12
VDS
60
80
100
VDS (V)
Switching Characteristics
10000
Switching Time t (ns)
300
40
Drain to Source Voltage
Gate to Source Voltage
VDS (V)
Drain to Source Voltage
VGS
VDD = 50 V
100 V
200 V
ID (A)
Ciss
5000
100
20
400
50 100
10000
IDR (A)
ID = 50 A
10 20
VGS = 0
f = 1 MHz
Dynamic Input Characteristics
500
5
Typical Capacitance vs.
Drain to Source Voltage
1000
10
0.1
2
Drain Current
Tc (°C)
Body-Drain Diode Reverse
Recovery Time
20
0.5 1
VGS = 10 V, VDD = 125 V
PW = 10 µs, duty ≤ 1 %
RG = 10 Ω
1000
tr
td(off)
tf
100
td(on)
tr
10
0.1
0.3
1
3
Drain Current
10
30
ID (A)
100
H5N2503P
Gate to Source Cutoff Voltage
vs. Case Temperature
Reverse Drain Current vs.
Source to Drain Voltage
5
Gate to Source Cutoff Voltage
VGS(off) (V)
Reverse Drain Current
IDR (A)
100
80
VGS = 0 V
60
40
10 V
20
5V
VDS = 10 V
4
ID = 10 mA
3
1 mA
0.1 mA
2
1
Pulse Test
0
–50
0
0
0.4
0.8
1.2
1.6
Normalized Transient Thermal Impedance γ s (t)
Source to Drain Voltage
2.0
VSD (V)
0
50
100
Case Temperature
150
200
Tc (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
θch – c (t) = γ s (t) • θch – c
θch – c = 0.833°C/W, Tc = 25°C
0.1
0.05
0.03
PDM
0.02
1
0.0
1s
t
ho
0.01
10 µ
pu
D=
lse
PW
T
PW
T
100 µ
1m
10 m
Pulse Width
100 m
1
PW (S)
Switching Time Test Circuit
Vin Monitor
10
Waveform
90%
Vout
Monitor
D.U.T.
Vin
10%
RL
Vout
10 Ω
Vin
10 V
VDD
= 125 V
10%
90%
td(on)
Rev.2.00 Sep 07, 2005 page 5 of 6
10%
tr
90%
td(off)
tf
H5N2503P
Package Dimensions
RENESAS Code
Package Name
MASS[Typ.]
SC-65
PRSS0004ZE-A
TO-3P / TO-3PV
5.0g
15.6 ± 0.3
Unit: mm
4.8 ± 0.2
1.5
0.3
19.9 ± 0.2
2.0
14.9 ± 0.2
0.5
1.0
φ3.2 ± 0.2
5.0 ± 0.3
JEITA Package Code
1.6
2.0
1.4 Max
18.0 ± 0.5
2.8
1.0 ± 0.2
3.6
0.6 ± 0.2
0.9
1.0
5.45 ± 0.5
5.45 ± 0.5
Ordering Information
Part Name
Quantity
Shipping Container
H5N2503P-E
360 pcs
Box (Tube)
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.2.00 Sep 07, 2005 page 6 of 6
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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