Features: PD - 91807A Product Summary 500Volt,  0.45
PD - 91807A
IRH7450
IRH8450
REPETITIVE AVALANCHE AND dv/dt RATED
®
HEXFET TRANSISTOR
N CHANNEL
MEGA RAD HARD
500Volt, 0.45Ω
Ω , MEGA RAD HARD HEXFET
International Rectifier’s RAD HARD technology
HEXFETs demonstrate excellent threshold voltage
stability and breakdown voltage stability at total
radiaition doses as high as 1x106 Rads(Si). Under
identical pre- and post-irradiation test conditions, International Rectifier’s RAD HARD HEXFETs retain
identical electrical specifications up to 1 x 105 Rads
(Si) total dose. No compensation in gate drive circuitry
is required. These devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads
(Si)/Sec, and return to normal operation within a few
microseconds. Since the RAD HARD process utilizes
International Rectifier’s patented HEXFET technology,
the user can expect the highest quality and reliability
in the industry.
RAD HARD HEXFET transistors also feature all of
the well-established advantages of MOSFETs, such
as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. They are well-suited for applications such
as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy
pulse circuits in space and weapons environments.
Product Summary
Part Number
IRH7450
IRH8450
BVDSS
500V
500V
n
n
n
n
n
n
n
n
n
n
n
Radiation Hardened up to 1 x 106 Rads (Si)
Single Event Burnout (SEB) Hardened
Single Event Gate Rupture (SEGR) Hardened
Gamma Dot (Flash X-Ray) Hardened
Neutron Tolerant
Identical Pre- and Post-Electrical Test Conditions
Repetitive Avalanche Rating
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Parameter
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ‚
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ƒ
Avalanche Current ‚
Repetitive Avalanche Energy‚
Peak Diode Recovery dv/dt „
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
www.irf.com
ID
11A
11A
Features:
Absolute Maximum Ratings 
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
RDS(on)
0.45Ω
0.45Ω
Pre-Irradiation
IRH7450, IRH8450
11
7.0
44
150
1.2
±20
500
11
15
3.5
-55 to 150
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
o
C
300 (0.063 in. (1.6mm) from case for 10s)
11.5 (typical)
g
1
10/14/98
IRH7450, IRH8450 Devices
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) 
Parameter
Min
Typ Max Units
BVDSS
Drain-to-Source Breakdown Voltage
∆BV DSS/∆T J Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
500
—
—
V
—
0.6
—
V/°C
—
—
2.0
4.0
—
—
—
—
—
—
—
—
0.45
0.50
4.0
—
50
250
Ω
IGSS
IGSS
Qg
Q gs
Q gd
td(on)
tr
td(off)
tf
LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
5.0
100
-100
150
30
75
45
190
190
130
—
LS
Internal Source Inductance
—
13
—
Ciss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
4000
330
52
—
—
—
V
S( )
Ω
µA
nA
nC
ns
nH
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
VGS = 12V, ID = 7.0A …
VGS = 12V, ID = 11A …
VDS = VGS, ID = 1.0mA
VDS > 15V, IDS = 7A …
VDS= 0.8 x Max Rating,VGS=0V
VDS = 0.8 x Max Rating
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =12V, ID =11A
VDS = Max Rating x 0.5
VDD = 250V, ID = 11A,
RG = 2.35Ω
Measured from drain
Modified MOSFET symlead, 6mm (0.25 in)
bol showing the internal
from package to center inductances.
of die.
Measured from source
lead, 6mm (0.25 in)
from package to
source bonding pad.
pF
VGS = 0V, VDS = 25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics 
Parameter
Min Typ Max Units
IS
ISM
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ‚
—
—
—
—
11
44
A
VSD
t rr
Q RR
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
1.6
1100
16
V
ns
µC
ton
Forward Turn-On Time
Test Conditions
Modified MOSFET symbol
showing the integral reverse
p-n junction rectifier.
Tj = 25°C, IS = 11A, VGS = 0V …
Tj = 25°C, IF = 11A, di/dt ≤ 100A/µs
VDD ≤ 50V …
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJA
RthCS
2
Junction-to-Case
Junction-to-Ambient
Case-to-Sink
Min Typ Max Units
—
—
—
— 0.83
—
30
0.12 —
Test Conditions
°C/W
Typical socket mount
www.irf.com
Radiation Characteristics
IRH7450, IRH8450 Devices
Radiation Performance of Rad Hard HEXFETs
International Rectifier Radiation Hardened HEXFETs
are tested to verify their hardness capability. The hardness assurance program at International Rectifier
comprises three radiation environments.
Every manufacturing lot is tested in a low dose rate
(total dose) environment per MIL-STD-750, test
method 1019 condition A. International Rectifier has
imposed a standard gate condition of 12 volts per
note 6 and a VDS bias condition equal to 80% of the
device rated voltage per note 7. Pre- and post- irradiation limits of the devices irradiated to 1 x 105 Rads
(Si) are identical and are presented in Table 1, column 1, IRH7450. Post-irradiation limits of the devices
irradiated to 1 x 106 Rads (Si) are presented in Table
Table 1. Low Dose Rate †
‡
VSD
High dose rate testing may be done on a special request basis using a dose rate up to 1 x 1012 Rads (Si)/
Sec (See Table 2).
International Rectifier radiation hardened HEXFETs
have been characterized in heavy ion Single Event
Effects (SEE) environments. Single Event Effects characterization is shown in Table 3.
IRH7450
Parameter
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)1
1, column 2, IRH8450. The values in Table 1 will be
met for either of the two low dose rate test circuits that
are used. Both pre- and post-irradiation performance
are tested and specified using the same drive circuitry
and test conditions in order to provide a direct comparison.
IRH8450
100K Rads (Si) 1000K Rads (Si) Units
Test Conditions ‰
Min
Max
Min
Max
Drain-to-Source Breakdown Voltage 500
Gate Threshold Voltage …
2.0
Gate-to-Source Leakage Forward
—
Gate-to-Source Leakage Reverse
—
Zero Gate Voltage Drain Current
—
Static Drain-to-Source …
—
On-State Resistance One
Diode Forward Voltage …
—
—
4.0
100
-100
50
0.45
500
1.25
—
—
—
—
—
4.5
100
-100
100
0.6
nA
µA
Ω
VGS = 0V, ID = 1.0mA
VGS = VDS, ID = 1.0mA
VGS = 20V
VGS = -20 V
VDS=0.8 x Max Rating, VGS =0V
VGS = 12V, ID = 7.0A
1.6
—
1.6
V
TC = 25°C, IS =11A,VGS = 0V
Table 2. High Dose Rate
V
ˆ
1011 Rads (Si)/sec 1012 Rads (Si)/sec
Parameter
VDSS
Drain-to-Source Voltage
IPP
di/dt
L1
Min Typ Max Min Typ Max Units
Test Conditions
—
— 400 —
— 400
V
Applied drain-to-source voltage during
gamma-dot
—
8
—
—
8
—
A
Peak radiation induced photo-current
—
— 15 —
—
3 A/µsec Rate of rise of photo-current
27 —
— 133 —
—
µH
Circuit inductance required to limit di/dt
Table 3. Single Event Effects
Ion
LET (Si)
(MeV/mg/cm2)
Fluence
(ions/cm2)
Range
(µm)
VDSBias
(V)
VGS Bias
(V)
Cu
28
3x 105
~43
275
-5
www.irf.com
3
IRH7450, IRH8450 Devices
Fig 1. Typical Response of Gate Threshhold
Voltage Vs. Total Dose Exposure
Fig 3. Typical Response of Transconductance
Vs. Total Dose Exposure
4
Post-Irradiation
Fig 2. Typical Response of On-State Resistance
Vs. Total Dose Exposure
Fig 4. Typical Response of Drain to Source
Breakdown Vs. Total Dose Exposure
www.irf.com
Post-Irradiation
IRH7450, IRH8450 Devices
Fig 5. Typical Zero Gate Voltage Drain
Current Vs. Total Dose Exposure
Fig 6. Typical On-State Resistance Vs.
Neutron Fluence Level
Fig 8a. Gate Stress of VGSS
Equals 12 Volts During
Radiation
Fig 7. Typical Transient Response
of Rad Hard HEXFET During
1x1012 Rad (Si)/Sec Exposure
www.irf.com
Fig 8b. VDSS Stress Equals
80% of BVDSS During Radiation
Fig 9. High Dose Rate
(Gamma Dot) Test Circuit
5
Radiation Characterstics
IRH7450, IRH8450 Devices
Note: Bias Conditions during radiation: VGS = 12 Vdc, VDS = 0 Vdc
6
Fig 10. Typical Output Characteristics
Pre-Irradiation
Fig 11. Typical Output Characteristics
Post-Irradiation 100K Rads (Si)
Fig 12. Typical Output Characteristics
Post-Irradiation 300K Rads (Si)
Fig 13. Typical Output Characteristics
Post-Irradiation 1 Mega Rads(Si)
www.irf.com
Radiation Characterstics
IRH7450, IRH8450 Devices
Note: Bias Conditions during radiation: VGS = 0 Vdc, VDS = 400 Vdc
Fig 14. Typical Output Characteristics
Pre-Irradiation
Fig 15. Typical Output Characteristics
Post-Irradiation 100K Rads (Si)
Fig 16. Typical Output Characteristics
Post-Irradiation 300K Rads (Si)
Fig 17. Typical Output Characteristics
Post-Irradiation 1 Mega Rads(Si)
www.irf.com
7
IRH7450, IRH8450 Devices
Fig 18. Typical Output Characteristics
Fig 20. Typical Transfer Characteristics
8
Pre-Irradiation
Fig 19. Typical Output Characteristics
Fig 21. Normalized On-Resistance
Vs. Temperature
www.irf.com
IRH7450, IRH8450 Devices
Pre-Irradiation
30
Fig 22. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 23. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 24. Typical Source-Drain Diode
Forward Voltage
Fig 25. Maximum Safe Operating
Area
www.irf.com
9
Pre-Irradiation
IRH7450, IRH8450 Devices
V DS
VGS
RD
D.U.T.
RG
+
-V DD
12V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 27a. Switching Time Test Circuit
VDS
90%
10%
VGS
Fig 26. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 27b. Switching Time Waveforms
Fig 28. Maximum Effective Transient Thermal Impedance, Junction-to-Case
10
www.irf.com
Pre-Irradiation
IRH7450, IRH8450 Devices
1 5V
L
VD S
D .U .T
RG
IA S
12V
20V
D R IV E R
+
- VD D
A
0 .0 1 Ω
tp
Fig 29a. Unclamped Inductive Test Circuit
V (B R )D S S
tp
Fig 29c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Current Regulator
Same Type as D.U.T.
Fig 29b. Unclamped Inductive Waveforms
50KΩ
QG
12V
.2µF
.3µF
12 V
QGS
D.U.T.
QGD
+
V
- DS
VGS
VG
3mA
Charge
Fig30a. Basic Gate Charge Waveform
www.irf.com
IG
ID
Current Sampling Resistors
Fig 30b. Gate Charge Test Circuit
11
Pre-Irradiation
IRH7450, IRH8450 Devices
 See Figures 18 through 30 for pre-irradiation
‚
ƒ
„
…
curves
Repetitive Rating; Pulse width limited by
maximum junction temperature.
Refer to current HEXFET reliability report.
VDD = 25V, Starting TJ = 25°C,
Peak IL = 11A, L>7.4mH RG=25Ω
ISD ≤ 11A, di/dt ≤ 120A/µs,
VDD ≤ BVDSS, TJ ≤ 150°C
Suggested RG =2.35Ω
Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
† Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, codition A.
‡ Total Dose Irradiation with VDS Bias.
VDS = 0.8 rated BVDSS (pre-radiation)
applied and VGS = 0 during irradiation per
MlL-STD-750, method 1019, condition A.
ˆ This test is performed using a flash x-ray
source operated in the e-beam mode (energy
~2.5 MeV), 30 nsec pulse.
‰ All Pre-Irradiation and Post-Irradiation test
conditions are identical to facilitate direct
comparison for circuit applications.
Case Outline and Dimensions — TO-204AE
Conforms to JEDEC Outline TO-204AE
Dimensions in Millimeters and ( Inches )
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
http://www.irf.com/
Data and specifications subject to change without notice.
10/98
12
www.irf.com
Was this manual useful for you? yes no
Thank you for your participation!

* Your assessment is very important for improving the work of artificial intelligence, which forms the content of this project

Download PDF

advertisement