IRFH3702TRPBF
PD - 97368A
IRFH3702PbF
HEXFET® Power MOSFET
Applications
l
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Synchronous Buck Converter for Computer
Processor Power
Isolated DC to DC Converters for Network and
Telecom
Buck Converters for Set-Top Boxes
VDSS
30V
RDS(on) max
Qg
7.1mΩ@VGS = 10V 9.6nC
Benefits
l
l
l
l
l
l
l
Low RDS(ON)
Very Low Gate Charge
Low Junction to PCB Thermal Resistance
Fully Characterized Avalanche Voltage and
Current
100% Tested for RG
Lead-Free (Qualified up to 260°C Reflow)
RoHS compliant (Halogen Free)
S
S
S
D
D
G
D
D
3mm x 3mm PQFN
Absolute Maximum Ratings
Parameter
Max.
VDS
Drain-to-Source Voltage
30
VGS
± 20
ID @ TA = 25°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
12
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
42
ID @ TC = 25°C
IDM
Continuous Drain Current, VGS @ 10V (Package Limited)
25
120
PD @TA = 25°C
Power Dissipation
2.8
PD @TA = 70°C
Power Dissipation
1.8
TJ
Linear Derating Factor
Operating Junction and
TSTG
Storage Temperature Range
Pulsed Drain Current
Units
V
16
c
A
W
0.02
-55 to + 150
W/°C
°C
Thermal Resistance
f
RθJC
Junction-to-Case
RθJA
Junction-to-Ambient
RθJA
Parameter
gh
Junction-to-Ambient (t<10s)
h
Typ.
Max.
–––
6.0
–––
45
–––
44
Units
°C/W
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
Notes  through † are on page 10
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1
09/21/10
IRFH3702PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS
∆ΒVDSS/∆TJ
Min. Typ. Max. Units
30
–––
–––
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
–––
–––
0.02
5.7
Gate Threshold Voltage
–––
1.35
8.7
1.8
IDSS
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
–––
–––
-6.5
–––
IGSS
Gate-to-Source Forward Leakage
–––
–––
–––
–––
Gate-to-Source Reverse Leakage
Forward Transconductance
–––
37
–––
–––
V/°C Reference to 25°C, ID = 1mA
VGS = 10V, ID = 16A
mΩ
11.8
VGS = 4.5V, ID = 12A
2.35
V
VDS = VGS, ID = 25µA
––– mV/°C
VDS = 24V, VGS = 0V
1.0
µA
150
VDS = 24V, VGS = 0V, TJ = 125°C
VGS = 20V
100
nA
-100
VGS = -20V
–––
S VDS = 15V, ID = 12A
Total Gate Charge
Pre-Vth Gate-to-Source Charge
–––
–––
9.6
2.4
14
–––
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
–––
–––
1.2
3.1
–––
–––
Qgodr
Qsw
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
–––
–––
2.9
4.3
–––
–––
Qoss
Output Charge
–––
7.4
–––
nC
RG
td(on)
Gate Resistance
Turn-On Delay Time
–––
–––
2.2
9.6
–––
–––
Ω
tr
td(off)
Rise Time
Turn-Off Delay Time
–––
–––
15
11
–––
–––
tf
Ciss
Fall Time
Input Capacitance
–––
–––
5.8
1510
–––
–––
Coss
Crss
Output Capacitance
Reverse Transfer Capacitance
–––
–––
306
120
–––
–––
RDS(on)
VGS(th)
∆VGS(th)
gfs
Qg
Qgs1
Qgs2
Qgd
V
Conditions
Drain-to-Source Breakdown Voltage
VGS = 0V, ID = 250µA
–––
7.1
e
e
VDS = 15V
nC
VGS = 4.5V
ID = 12A
See Fig.17 & 18
VDS = 16V, VGS = 0V
VDD = 15V, VGS = 4.5V
ns
ID = 12A
RG=1.8Ω
See Fig.15
VGS = 0V
pF
VDS = 15V
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
EAS
IAR
Single Pulse Avalanche Energy
Avalanche Current
c
Units
mJ
A
Max.
77
12
Typ.
–––
–––
d
Diode Characteristics
Parameter
IS
Continuous Source Current
ISM
(Body Diode)
Pulsed Source Current
VSD
trr
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
2
c
Min. Typ. Max. Units
–––
–––
Conditions
MOSFET symbol
3.5
A
–––
–––
120
–––
–––
–––
17
1.0
26
V
ns
–––
15
23
nC
D
showing the
integral reverse
G
S
p-n junction diode.
TJ = 25°C, IS = 12A, VGS = 0V
TJ = 25°C, IF = 12A, VDD = 15V
di/dt = 225A/µs
e
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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IRFH3702PbF
1000
1000
TOP
ID, Drain-to-Source Current (A)
Tj = 25°C
100
BOTTOM
≤60µs PULSE WIDTH
VGS
10V
5.0V
4.5V
3.5V
3.3V
3.1V
2.9V
2.7V
Tj = 150°C
ID, Drain-to-Source Current (A)
≤60µs PULSE WIDTH
TOP
100
10
BOTTOM
10
VGS
10V
5.0V
4.5V
3.5V
3.3V
3.1V
2.9V
2.7V
2.7V
2.7V
1
1
0.1
1
10
0.1
100
10
100
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
1000
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
1
100
T J = 150°C
10
T J = 25°C
1
VDS = 15V
≤60µs PULSE WIDTH
0.1
ID = 16A
VGS = 10V
1.5
1.0
0.5
1
2
3
4
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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5
-60 -40 -20 0
20 40 60 80 100 120 140 160
T J , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
vs. Temperature
3
IRFH3702PbF
100000
14.0
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
VGS, Gate-to-Source Voltage (V)
ID= 12A
C, Capacitance (pF)
C oss = C ds + C gd
10000
Ciss
1000
Coss
12.0
VDS= 24V
VDS= 15V
10.0
8.0
6.0
4.0
2.0
Crss
100
0.0
1
10
100
0
VDS, Drain-to-Source Voltage (V)
15
20
25
30
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
1000
1000
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
10
QG, Total Gate Charge (nC)
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
T J = 150°C
10
T J = 25°C
1
100µsec
10msec
10
1msec
1
T A = 25°C
Tj = 150°C
Single Pulse
VGS = 0V
0.1
0.1
0.2
0.4
0.6
0.8
1.0
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
5
1.2
0
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRFH3702PbF
16
2.5
VGS(th) , Gate Threshold Voltage (V)
ID, Drain Current (A)
14
12
10
8
6
4
2
0
2.0
ID = 25µA
1.5
1.0
0.5
25
50
75
100
125
150
-75 -50 -25
T A , Ambient Temperature (°C)
0
25
50
75 100 125 150
T J , Temperature ( °C )
Fig 9. Maximum Drain Current vs.
Ambient Temperature
Fig 10. Threshold Voltage Vs. Temperature
Thermal Response ( Z thJA ) °C/W
100
10
D = 0.50
0.20
0.10
0.05
1
0.02
0.01
0.1
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + TA
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t 1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
20
350
ID = 16A
18
16
14
12
10
T J = 125°C
8
TJ = 25°C
6
4
EAS , Single Pulse Avalanche Energy (mJ)
RDS(on), Drain-to -Source On Resistance (m Ω)
IRFH3702PbF
ID
TOP
1.7A
2.6A
BOTTOM 12A
300
250
200
150
100
50
0
0
2
4
6
8
10 12 14 16 18 20
25
50
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance vs. Gate Voltage
V DS
V GS
VDS
+
V
- DD
IAS
20V
125
150
RD
D.U.T.
RG
DRIVER
D.U.T
RG
100
Fig 13. Maximum Avalanche Energy
vs. Drain Current
15V
L
75
Starting T J , Junction Temperature (°C)
+
-V DD
V10V
GS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1
A
0.01Ω
tp
Fig 14a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
Fig 15a. Switching Time Test Circuit
VDS
90%
10%
VGS
I AS
Fig 14b. Unclamped Inductive Waveforms
6
td(on)
tr
td(off)
tf
Fig 15b. Switching Time Waveforms
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IRFH3702PbF
D.U.T
Driver Gate Drive
P.W.
+
ƒ
-
‚
-
-
„
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
+

RG
• dv/dt controlled by RG
• Driver same type as D.U.T.
• I SD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
P.W.
Period
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
D=
Period
V DD
+
-
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
ISD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Current Regulator
Same Type as D.U.T.
Id
Vds
Vgs
50KΩ
12V
.2µF
.3µF
D.U.T.
+
V
- DS
Vgs(th)
VGS
3mA
IG
ID
Qgs1 Qgs2
Qgd
Qgodr
Current Sampling Resistors
Fig 17. Gate Charge Test Circuit
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Fig 18. Gate Charge Waveform
7
IRFH3702PbF
PQFN Package Details
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
8
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IRFH3702PbF
PQFN Part Marking
PQFN Tape and Reel
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
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9
IRFH3702PbF
Orderable part number
Package Type
IRFH3702TRPBF
PQFN 3mm x 3mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Note
Qualification information†
Qualification level
Moisture Sensitivity Level
RoHS compliant
†
††
†††
Cons umer
(per JE DE C JE S D47F
PQFN 3mm x 3mm
††
†††
guidelines )
MS L1
†††
(per IPC/JE DE C J-S T D-020D
Yes
)
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
Applicable version of JEDEC standard at the time of product release.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Starting TJ = 25°C, L = 1.0mH, RG = 25Ω, IAS = 12A.
ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%.
„ Rthjc is guaranteed by design.
… When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material.
† Refer to application note #AN-994.
Data and specifications subject to change without notice
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.09/2010
10
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