datasheet for FCX1051A by Kexin

datasheet for FCX1051A by Kexin
Transistors
SMD Type
NPN Silicon Power Switching Transistor
FCX1051A
Features
2W power dissipation.
10A peak pulse current.
Excellent HFE characteristics up to 10 Amps.
Extremely low saturation voltage E.g. 17mv Typ.
Extremely low equivalent on-resistance.
RCE(sat) 57mÙ at 3A.
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
150
V
Collector-emitter voltage
VCEO
40
V
Emitter-base voltage
VEBO
5
V
ICM
10
A
IC
3
A
Ptot
1
W
Tj,Tstg
-55 to +150
Continuous collector current
Peak pulse current
Power dissipation
Operating and storage temperature range
www.kexin.com.cn
1
Transistors
SMD Type
FCX1051A
Electrical Characteristics Ta = 25
Parameter
Symbol
Min
Typ
Max
Unit
V(BR)CBO IC=100ìA
150
V
Collector-emitter breakdown voltage *
V(BR)CEO IC=10mA
40
V
Emitter-base breakdown voltage
V(BR)EBO IE=100ìA
5
Collector Cut-Off Current
ICBO
Collector Emitter Cut-Off Current
ICES
Emitter Cut-Off Current
IEBO
V
VCB=120V
0.3
10
nA
VCE=120V
0.3
10
nA
VEB=4V
0.3
10
nA
Collector-emitter saturation voltage *
IC=0.2A, IB=10mA
IC=1A, IB=10mA
VCE(sat) IC=2A, IB=20mA
IC=3A, IB=40mA
IC=5A, IB=100mA
17
85
140
170
250
25
120
180
250
340
mV
Base-emitter saturation voltage *
VBE(sat) IC=3A, IB=40mA
880
1000
mV
Base-emitter ON voltage *
VBE(on) IC=3A, VCE=2V
840
950
mV
440
450
360
220
55
1200
-
Static Forward Current Transfer Ratio*
Transitional frequency
hFE
fT
IC=10mA, VCE=2V
IC=1A,VCE=2V
IC=3A,VCE=2V
IC=5A,VCE=2V
IC=10A,VCE=2V
290
270
270
130
40
IC=50mA, VCE=10V f=100MHz
155
Output capacitance
Cobo
VCB=10V, f=1MHz
27
Turn-on time
t(on)
IC=3A, VCC=10V
220
ns
Turn-off time
t(off)
IB1=IB2=30mA
540
ns
* Pulse test: tp = 300 ìs; d
Marking
Marking
2
Testconditons
Collector-base breakdown voltage
051
www.kexin.com.cn
0.02.
MHz
40
pF
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