IRLR8711CPBF
PD - 97238A
IRLR8711CPbF
Applications
l High Frequency Synchronous Buck
Converters for Computer Processor Power
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
HEXFET® Power MOSFET
VDSS
RDS(on) max
Qg
25V
5.6m:
13nC
D
Benefits
l Very Low RDS(on) at 4.5V VGS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
l Lead-Free
G
D
S
D-Pak
IRLR8711CPbF
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Parameter
Max.
Units
25
V
VDS
Drain-to-Source Voltage
VGS
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
± 20
84
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
60
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
c
Maximum Power Dissipation
PD @TC = 100°C
Maximum Power Dissipation
TJ
Linear Derating Factor
Operating Junction and
TSTG
Storage Temperature Range
f
f
A
340
g
g
W
68
34
W/°C
°C
0.45
-55 to + 175
Soldering Temperature, for 10 seconds
300 (1.6mm from case)
Thermal Resistance
Parameter
h
RθJC
Junction-to-Case
RθJA
Junction-to-Ambient (PCB Mount)
RθJA
Junction-to-Ambient
h
gh
Typ.
Max.
–––
2.2
–––
50
–––
110
Units
°C/W
Notes  through † are on page 10
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1
09/22/06
IRLR8711CPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
BVDSS
Drain-to-Source Breakdown Voltage
25
∆ΒVDSS/∆TJ
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
V
Conditions
–––
–––
VGS = 0V, ID = 250µA
–––
16
–––
–––
4.5
5.6
mV/°C Reference to 25°C, ID = 1mA
mΩ VGS = 10V, ID = 21A
–––
6.2
7.8
VGS = 4.5V, ID = 17A
VGS(th)
Gate Threshold Voltage
1.35
1.8
2.35
V
∆VGS(th)/∆TJ
Gate Threshold Voltage Coefficient
–––
-6.3
–––
mV/°C
IDSS
Drain-to-Source Leakage Current
µA
VDS = 20V, VGS = 0V
nA
VGS = 20V
VDS = VGS, ID = 50µA
–––
–––
1.0
–––
–––
150
Gate-to-Source Forward Leakage
–––
–––
100
Gate-to-Source Reverse Leakage
–––
–––
-100
Forward Transconductance
86
–––
–––
Total Gate Charge
–––
13
20
Qgs1
Pre-Vth Gate-to-Source Charge
–––
3.0
–––
Qgs2
Post-Vth Gate-to-Source Charge
–––
1.9
–––
Qgd
Gate-to-Drain Charge
–––
4.3
–––
ID = 17A
Qgodr
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
–––
3.8
–––
See Fig.16
Qsw
–––
6.2
–––
Qoss
Output Charge
–––
6.4
–––
nC
RG
td(on)
Gate Resistance
Turn-On Delay Time
–––
–––
1.5
9.7
3.4
–––
Ω
tr
Rise Time
–––
29
–––
td(off)
Turn-Off Delay Time
–––
10
–––
tf
Fall Time
–––
4.4
–––
Ciss
Input Capacitance
–––
1640
–––
Coss
Output Capacitance
–––
430
–––
Crss
Reverse Transfer Capacitance
–––
210
–––
IGSS
gfs
Qg
e
e
VDS = 20V, VGS = 0V, TJ = 125°C
VGS = -20V
S
VDS = 13V, ID = 17A
VDS = 13V
nC
VGS = 4.5V
VDS = 10V, VGS = 0V
VDD = 13V, VGS = 4.5V
ID = 17A
e
ns
Clamped Inductive Load
pF
VDS = 13V
VGS = 0V
ƒ = 1.0MHz
Avalanche Characteristics
EAS
Parameter
Single Pulse Avalanche Energy
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
c
Typ.
–––
d
c
Units
mJ
Max.
47
–––
17
A
–––
6.8
mJ
Diode Characteristics
Parameter
Min. Typ. Max. Units
f
IS
Continuous Source Current
–––
–––
84
ISM
(Body Diode)
Pulsed Source Current
–––
–––
340
VSD
(Body Diode)
Diode Forward Voltage
–––
–––
1.0
V
trr
Reverse Recovery Time
–––
13
20
ns
Qrr
Reverse Recovery Charge
–––
8.0
12
nC
ton
Forward Turn-On Time
2
c
Conditions
MOSFET symbol
A
showing the
integral reverse
p-n junction diode.
TJ = 25°C, IS = 17A, VGS = 0V
TJ = 25°C, IF = 17A, VDD = 13V
di/dt = 300A/µs
e
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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IRLR8711CPbF
1000
1000
VGS
10V
5.0V
4.5V
3.7V
3.5V
3.0V
2.7V
2.5V
100
BOTTOM
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
100
10
1
2.5V
0.1
10
2.5V
≤60µs PULSE WIDTH
≤60µs PULSE WIDTH
Tj = 175°C
Tj = 25°C
0.1
BOTTOM
1
10
1
100
0.1
1000
1
10
100
1000
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
1000
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
VGS
10V
5.0V
4.5V
3.7V
3.5V
3.0V
2.7V
2.5V
T J = 175°C
100
10
T J = 25°C
1
VDS = 15V
≤60µs PULSE WIDTH
0.1
ID = 42A
VGS = 10V
1.5
1.0
0.5
1
2
3
4
5
6
7
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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8
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
vs. Temperature
3
IRLR8711CPbF
10000
5.0
VGS = 0V,
f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = C gd
VGS, Gate-to-Source Voltage (V)
ID= 17A
C, Capacitance (pF)
Coss = Cds + Cgd
Ciss
1000
Coss
Crss
VDS= 20V
VDS= 13V
4.0
VDS= 5.0V
3.0
2.0
1.0
0.0
100
1
10
0
100
4
6
8
10
12
14
16
18
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
1000
ID, Drain-to-Source Current (A)
1000
ISD, Reverse Drain Current (A)
2
QG, Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100
100
T J = 175°C
T J = 25°C
10
100µsec
10
1msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
VGS = 0V
0.1
1.0
0.0
0.5
1.0
1.5
2.0
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
10msec
2.5
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRLR8711CPbF
2.5
80
VGS(th) , Gate Threshold Voltage (V)
90
Limited By Package
ID, Drain Current (A)
70
60
50
40
30
20
10
2.0
ID = 50µA
1.5
1.0
0.5
0
25
50
75
100
125
150
-75 -50 -25 0
175
25 50 75 100 125 150 175 200
T J , Temperature ( °C )
T C , Case Temperature (°C)
Fig 9. Maximum Drain Current vs.
Case Temperature
Fig 10. Threshold Voltage vs. Temperature
Thermal Response ( Z thJC ) °C/W
10
D = 0.50
1
0.20
0.10
0.05
0.1
τJ
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.01
R1
R1
τJ
τ1
τ1
R2
R2
τ2
R3
R3
Ri (°C/W)
R4
R4
τC
τ
τ2
τ3
τ3
Ci= τi/Ri
Ci i/Ri
τ4
τ4
τi (sec)
0.0623
0.000006
0.4903
0.000029
1.1779
0.000455
0.4716
0.001642
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRLR8711CPbF
200
EAS , Single Pulse Avalanche Energy (mJ)
RDS(on) , Drain-to -Source On Resistance ( mΩ)
25
ID = 21A
20
15
10
T J = 125°C
5
T J = 25°C
0
ID
TOP
5.7A
7.9A
BOTTOM 17A
180
160
140
120
100
80
60
40
20
0
2
4
6
8
10
12
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
VGS, Gate -to -Source Voltage (V)
Fig 13. Maximum Avalanche Energy
vs. Drain Current
Fig 12. On-Resistance vs. Gate Voltage
V(BR)DSS
15V
DRIVER
L
VDS
D.U.T
RG
+
V
- DD
IAS
VGS
20V
tp
tp
A
0.01Ω
I AS
Fig 14a. Unclamped Inductive Test Circuit
Fig 14b. Unclamped Inductive Waveforms
LD
VDS
+
VDS
90%
VDD D.U.T
VGS
Pulse Width < 1µs
Duty Factor < 0.1%
10%
VGS
td(on)
Fig 15a. Switching Time Test Circuit
6
tr
td(off)
tf
Fig 15b. Switching Time Waveforms
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IRLR8711CPbF
Id
Current Regulator
Same Type as D.U.T.
Vds
Vgs
50KΩ
.2µF
12V
.3µF
+
V
- DS
D.U.T.
Vgs(th)
VGS
3mA
IG
ID
Qgs1 Qgs2
Current Sampling Resistors
Driver Gate Drive
P.W.
+
ƒ
+
‚
„
Reverse
Recovery
Current
VDD
P.W.
Period
D.U.T. ISD Waveform
+
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
D=
*

•
•
•
•
Period
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
-
RG
Qgodr
Fig 16b. Gate Charge Waveform
Fig 16a. Gate Charge Test Circuit
D.U.T
Qgd
+
-
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
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7
IRLR8711CPbF
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak (TO-252AA) Part Marking Information
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IRLR8711CPbF
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRR
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
FEED DIRECTION
TRL
16.3 ( .641 )
15.7 ( .619 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Starting TJ = 25°C, L = 0.34mH, RG = 25Ω,
IAS = 17A.
ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%.
„ Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 42A.
… When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to
application note #AN-994.
† Rθ is measured at TJ approximately at 90°C.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.09/06
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9
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
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