Samsung K4G41325FC-HC28

Nov. 2012
Graphic Memory
Product Guide
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-1-
Nov. 2012
Product Guide
Graphic Memory
1. GRAPHIC MEMORY ORDERING INFORMATION
1
2
3
4
5
6
7
8
9
10 11 12
13
14 15
K 4 X XX XX X X X - X X XX
Speed
SAMSUNG Memory
Temperature & Power
DRAM
Package Type
Product
Density & Refresh
Revision
Interface (VDD, VDDQ)
Organization
Bank
1. SAMSUNG Memory
11. "-"
2. DRAM
12. Package Type
E
H
B
G
V
3. Product
W : gDDR3 SDRAM
J : GDDR3 SGRAM
G : GDDR5 SGRAM
4~5. Density & Refresh
51
52
10
20
1G
2G
4G
41
GDDR5
H : 170FBGA(Halogen Free & Lead Free & Flip-Chip)
F : 170FBGA(Halogen Free & Lead Free)
13. Temperature & Power(VDD)
C
J
L
Y
16 : x16
32 : x32
8. Bank
:
:
:
:
Commercial Normal
Commercial High
Commercial Low
Commercial Low Voltage
14~15. Speed
3 : 4Banks
4 : 8Banks
5 : 16Banks
9. Interface ( VDD, VDDQ)
6 : SSTL_15 (1.5V,1.5V)
F : POD_15 (1.5V,1.5V)
K : POD_18 (1.8V,1.8V)
10. Revision
1st Gen.
3rd Gen.
5th Gen.
7th Gen.
9th Gen.
17th Gen.
gDDR3
100FBGA(Halogen Free & Lead Free)
96FBGA(Halogen Free & Lead Free)
96FBGA(Halogen Free & Lead Free & Flip-Chip)
78FBGA(Halogen Free & Lead Free)
78FBGA(Halogen Free & Lead Free & Flip-Chip)
GDDR3
B : 136FBGA(Lead Free)
H : 136FBGA(Halogen Free & Lead Free)
: 512M, 8K/64ms
: 512M, 8K/32ms
:
1G, 8K/32ms
:
2G, 16K/32ms
:
1G, 8K/64ms
:
2G, 8K/64ms
:
4G, 8K/64ms
:
4G, 16K/32ms
6~7. Organization
M:
B :
D:
F :
H:
Q:
:
:
:
:
:
A
C
E
G
I
Z
:
:
:
:
:
:
1B
1A
11
12
14
15
16
18
19
20
22
2nd Gen.
4th Gen.
6th Gen.
8th Gen.
10th Gen.
26th Gen.
-2-
:
:
:
:
:
:
:
:
:
:
:
0.83ns (2400Mbps)
1.0ns (2133Mbps)
1.07ns (1866Mbps)
1.25ns (1600Mbps)
1.4ns (1400Mbps)
1.5ns (1333Mbps)
1.6ns (1200Mbps)
1.8ns (1100Mbps)
1.875ns (1066Mbps)
2.0ns (1000Mbps)
2.2ns (900Mbps)
25
28
03
04
05
5C
06
6A
07
7A
09
:
:
:
:
:
:
:
:
:
:
:
0.25ns
0.28ns
0.33ns
0.40ns
0.50ns
0.56ns
0.62ns
0.66ns
0.71ns
0.77ns
0.9ns
(8000Mbps)
(7000Mbps)
(6000Mbps)
(5000Mbps)
(4000Mbps)
(3600Mbps)
(3200Mbps)
(3000Mbps)
(2800Mbps)
(2600Mbps)
(2200Mbps)
Nov. 2012
Product Guide
Graphic Memory
2. GRAPHIC MEMORY COMPONENT PRODUCT GUIDES
Product
Density
Part Num.
PKG & Speed
Org.
1Gb G-die
K4W1G1646G
BC08/1A
11/12/15
64Mx16
2Gb C-die
K4W2G1646C
HC1A/11
12/15
gDDR3
SDRAM
GDDR3
SGRAM
Banks
Ref.
Voltage(V)
SSTL_15
8K/64ms
1.5V ± 0.075V
2Gb E-die
K4W2G1646E
4Gb B-die
K4W4G1646B
HC 1A/11/12
256Mx16
K4J10324KG
HC1A/14
32Mx32
POD_18
8K/32ms
1.8V ± 0.1V
K4G10325FG
HC03/04/05
32Mx32
POD_15
8K/32ms
1.5V ± 0.045V
K4G20325FD
FC28/03/04
64Mx32
POD_15
16K/32ms
1.5V ± 0.045V
K4G41325FC
HC28/03/04
128Mx32
POD_15
16K/32ms
1.5V ± 0.045V
1Gb G-die
8Banks
2Gb D-die
4Gb C-die
16Banks
-3-
PKG.
Status
Mass
Production
BC1A/11
12/15
1Gb G-die
GDDR5
SGRAM
128Mx16
8Banks
Interf.
96ball
FBGA
Mass
Production
Mass
Production
Mass
Production
136ball
FBGA
Mass
Production
Mass
Production
170ball
FBGA
Mass
Production
ES
Sep.’12
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