datasheet for SM12T1 by ON Semiconductor

SM05T1 Series
Transient Voltage
Suppressor Diode Array
SOT−23 Dual Common Anode Diodes
for ESD Protection
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These dual monolithic silicon TVS diodes are designed for
applications requiring transient overvoltage protection capability. They
are intended for use in voltage and ESD sensitive equipment such as
computers, printers, business machines, communication systems,
medical equipment and other applications. Their dual junction common
anode design protects two separate lines using only one package. These
devices are ideal for situations where board space is at a premium.
Specification Features:
• SOT−23 Package Allows Either Two Separate Unidirectional
•
•
•
•
•
1
PIN 1. CATHODE
2. CATHODE
3. ANODE
3
2
3
SOT−23
CASE 318
STYLE 12
1
2
Configurations or a Single Bidirectional Configuration
Working Peak Reverse Voltage Range − 5.0 V to 24 V
Peak Power − 300 Watt (8 X 20 ms)
Low Leakage
Flammability Rating UL 94 V−0
These are Pb−Free Devices
MARKING DIAGRAM
xxM MG
G
1
Mechanical Characteristics:
CASE: Void-Free, Transfer-Molded, Thermosetting Plastic Case
FINISH: Corrosion Resistant Finish, Easily Solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
Package Designed for Optimal Automated Board Assembly
Small Package Size for High Density Applications
Available in 8 mm Tape and Reel
Use the Device Number to Order the 7 Inch/3,000 Unit Reel
Replace the “T1” with “T3” in the Device Number to Order the
13 Inch/10,000 Unit Reel
xxM = Device Code
xx = 05, 12, 15, 24, 36
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Package
Shipping†
SM05T1G
SOT−23
(Pb−Free)
3000/Tape & Reel
SM12T1G
SOT−23
(Pb−Free)
3000/Tape & Reel
SM15T1G
SOT−23
(Pb−Free)
3000/Tape & Reel
SM24T1G
SOT−23
(Pb−Free)
3000/Tape & Reel
SM36T1G
SOT−23
(Pb−Free)
3000/Tape & Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2011
July, 2011 − Rev. 4
1
Publication Order Number:
SM05T1/D
SM05T1 Series
MAXIMUM RATINGS
Symbol
Value
Unit
Ppk
300
W
±15
±8.0
kV
IEC 61000−4−4 (EFT)
40
A
IEC 61000−4−5 (Lightening)
12
A
225
1.8
556
°mW°
mW/°C
°C/W
RqJA
300
2.4
417
°mW
mW/°C
°C/W
TJ, Tstg
− 55 to +150
°C
TL
260
°C
Rating
Peak Power Dissipation @ 20 ms (Note 1) @ TL ≤ 25°C
IEC 61000−4−2 (ESD)
Air
Contact
Total Power Dissipation on FR−5 Board (Note 2) @ TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
°PD°
RqJA
Total Power Dissipation on Alumina Substrate (Note 3) @ TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
°PD
Junction and Storage Temperature Range
Lead Solder Temperature − Maximum (10 Second Duration)
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Non−repetitive current pulse per Figure 3
2. FR−5 = 1.0 x 0.75 x 0.62 in.
3. Alumina = 0.4 x 0.3 x 0.024 in., 99.5% alumina
NOTE: Other voltages may be available upon request
ELECTRICAL CHARACTERISTICS
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3)
Symbol
Parameter
IPP
Maximum Reverse Peak Pulse Current
VC
Clamping Voltage @ IPP
VRWM
IR
VBR
IT
QVBR
I
IF
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ VRWM
Breakdown Voltage @ IT
VC VBR VRWM
Test Current
Maximum Temperature Coefficient of VBR
IF
Forward Current
VF
Forward Voltage @ IF
ZZT
Maximum Zener Impedance @ IZT
IZK
Reverse Current
ZZK
Maximum Zener Impedance @ IZK
V
IR VF
IT
IPP
Uni−Directional TVS
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
IT
VC @
IPP =
1 Amp
Max IPP
(Note 4)
VBR, Breakdown Voltage
VRWM
IR @ VRWM
(Volts)
Typical
Capacitance
(pF)
Device
Device
Marking
(Volts)
(mA)
Min
Max
mA
(Volts)
(Amps)
Pin 1 to 3
@ 0 Volts
SM05T1G
05M
5
10
6.2
7.3
1.0
9.8
17
225
SM12T1G
12M
12
1.0
13.3
15.75
1.0
19
12
95
SM15T1G
15M
15
1.0
16.7
19.6
1.0
24
10
100
SM24T1G
24M
24
1.0
26.7
31.35
1.0
43
5.0
60
SM36T1G
36M
36
1.0
40.0
46.95
1.0
60
4.0
45
4. 8 × 20 ms pulse waveform per Figure 3
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2
SM05T1 Series
TYPICAL CHARACTERISTICS
300
PD, POWER DISSIPATION (mW)
PPP, PEAK PULSE POWER (kW)
10
1
0.1
0.01
250
ALUMINA SUBSTRATE
200
150
100
FR−5 BOARD
50
0
1
0.1
100
10
tp, PULSE DURATION (ms)
1000
0
Figure 1. Non−Repetitive Peak Pulse Power
versus Pulse Time
C, CAPACITANCE (pF)
70
60
50
HALF VALUE IRSM/2 @ 20 ms
40
30
75
100
125
TEMPERATURE (°C)
150
175
250
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
80
50
Figure 2. Steady State Power Derating Curve
PEAK VALUE IRSM @ 8 ms
tr
90
tP
20
210
170
130
10
0
90
0
20
40
60
0
80
1
t, TIME (ms)
3
2
BIAS VOLTAGE (VOLTS)
100
90
80
70
60
50
40
30
20
10
0
0
4
Figure 4. Typical Diode Capacitance (SM05)
Figure 3. 8 × 20 ms Pulse Waveform
C, CAPACITANCE (pF)
% OF PEAK PULSE CURRENT
100
25
1
5
8
BIAS VOLTAGE (VOLTS)
12
Figure 5. Typical Diode Capacitance (SM12)
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3
5
SM05T1 Series
TYPICAL COMMON ANODE APPLICATIONS
when board space is at a premium. Two simplified examples
of TVS applications are illustrated below.
A quad junction common anode design in a SOT−23
package protects four separate lines using only one package.
This adds flexibility and creativity to PCB design especially
Computer Interface Protection
A
KEYBOARD
TERMINAL
PRINTER
ETC.
B
C
I/O
FUNCTIONAL
DECODER
D
GND
SM05T1
Series
Microprocessor Protection
VDD
VGG
ADDRESS BUS
RAM
ROM
DATA BUS
CPU
SM05T1
Series
I/O
CLOCK
CONTROL BUS
GND
SM05T1
Series
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4
SM05T1 Series
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
D
SEE VIEW C
3
HE
E
c
1
2
b
DIM
A
A1
b
c
D
E
e
L
L1
HE
0.25
e
q
A
L
A1
L1
VIEW C
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
STYLE 12:
PIN 1. CATHODE
2. CATHODE
3. ANODE
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
0.8
0.031
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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SM05T1/D
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