2SK1302 Datasheet

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2SK1302
Silicon N Channel MOS FET
REJ03G0921-0200
(Previous: ADE-208-1260)
Rev.2.00
Sep 07, 2005
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• 4 V gate drive device
 Can be driven from 5 V source
• Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
RENESAS Package code: PRSS0004AC-A
(Package name: TO-220AB)
D
G
1
Rev.2.00 Sep 07, 2005 page 1 of 6
2
1. Gate
2. Drain
(Flange)
3. Source
S
3
2SK1302
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Symbol
V (BR)DSS
Ratings
100
Unit
V
VGSS
ID
±20
20
V
A
80
20
A
A
ID(pulse)
IDR
*1
*2
Channel dissipation
Channel temperature
Pch
Tch
50
150
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at TC = 25°C
Tstg
–55 to +150
W
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Symbol
V(BR)DSS
Min
100
Typ
—
Max
—
Unit
V
Gate to source breakdown voltage
Gate to source leak current
V(BR)GSS
IGSS
±20
—
—
—
—
±10
V
µA
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
Zero gate voltage drain current
Gate to source cutoff voltage
IDSS
VGS(off)
—
1.0
—
—
250
2.0
µA
V
VDS = 80 V, VGS = 0
ID = 1 mA, VDS = 10 V
Static drain to source on state
resistance
RDS(on)
—
—
0.065
0.085
0.085
0.12
Ω
Ω
ID = 10 A, VGS = 10 V *
3
ID = 10 A, VGS = 4 V *
Forward transfer admittance
Input capacitance
|yfs|
Ciss
10
—
16
1300
—
—
S
pF
Output capacitance
Reverse transfer capacitance
Coss
Crss
—
—
540
160
—
—
pF
pF
ID = 10 A, VDS = 10 V *
VDS = 10 V, VGS = 0,
f = 1 MHz
Turn-on delay time
Rise time
td(on)
tr
—
—
12
100
—
—
ns
ns
Turn-off delay time
Fall time
td(off)
tf
—
—
300
150
—
—
ns
ns
Body to drain diode forward voltage
Body to drain diode reverse recovery
time
VDF
trr
—
—
1.3
300
—
—
V
ns
Note:
3. Pulse test
Rev.2.00 Sep 07, 2005 page 2 of 6
Test conditions
ID = 10 mA, VGS = 0
3
3
ID = 10 A, VGS = 10 V,
RL = 3 Ω
IF = 20 A, VGS = 0
IF = 20 A, VGS = 0,
diF/dt = 50 A/µs
2SK1302
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
100
µs
s
m
t
ra
pe
10
ot
(T C
Sh
n
(1
io
3
)
=
)
°C
25
1
0.3 Operation in this area
is limited by RDS (on)
0
50
100
0.1
150
1
3
10
30
100
300
1000
Case Temperature TC (°C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
Typical Transfer Characteristics
50
20
Pulse Test
7V
5V
VDS = 10 V
Pulse Test
4V
40
30
Drain Current ID (A)
10 V
Drain Current ID (A)
m
s
µs
10
O
Drain Current ID (A)
10
Ta = 25°C
=
20
1
DC
40
10
0
30
PW
Channel Dissipation Pch (W)
60
3.5 V
20
3V
10
VGS = 2.5 V
16
12
8
75°C
TC = 25°C
–25°C
4
0
4
8
12
16
20
0
1
2
3
4
5
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Static Drain to Source on State
Resistance vs. Drain Current
2.0
Pulse Test
1.6
ID = 20 A
1.2
0.8
10 A
0.4
5A
0
0
2
4
6
8
Gate to Source Voltage VGS (V)
Rev.2.00 Sep 07, 2005 page 3 of 6
10
Static Drain to Source on State Resistance
RDS (on) (Ω)
Drain to Source Saturation Voltage
VDS (on) (V)
0
0.5
Pulse Test
0.2
VGS = 4 V
0.1
10 V
0.05
0.02
0.01
0.005
2
5
10
20
50 100
Drain Current ID (A)
200
Forward Transfer Admittance
vs. Drain Current
Forward Transfer Admittance yfs (S)
Static Drain to Source on State
Resistance vs. Temperature
0.20
Pulse Test
ID = 20 A
0.16
10 A
0.12
5A
VGS = 4 V
20 A
5 A, 10 A
0.08
VGS = 10 V
0.04
0
–40
0
40
80
120
160
10
5
2
VDS = 10 V
Pulse Test
1
0.5
0.2
0.5
1.0
Typical Capacitance vs.
Drain to Source Voltage
20
10000
VGS = 0
f = 1 MHz
Capacitance C (pF)
500
200
100
50
di/dt = 50 A/µs, Ta = 25°C
VGS = 0
Pulse Test
20
10
0.5
Ciss
1000
Coss
Crss
100
10
2
1.0
5
10
20
50
0
10
20
30
40
50
Reverse Drain Current IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
Switching Characteristics
20
100
80
10
5
2
Body to Drain Diode Reverse
Recovery Time
VDS
VDD = 25 V
50 V
80 V
16
12
60
VGS
40
8
VDD = 80 V
50 V
ID = 20 A
25 V
20
0
20
40
60
80
Gate Charge Qg (nc)
Rev.2.00 Sep 07, 2005 page 4 of 6
4
0
100
1000
Gate to Source Voltage VGS (V)
Reverse Recovery Time trr (ns)
–25°C
TC = 25°C
75°C
20
Drain Current ID (A)
1000
Drain to Source Voltage VDS (V)
50
Case Temperature TC (°C)
Switching Time t (ns)
Static Drain to Source on State Resistance
RDS (on) (Ω)
2SK1302
td(off)
500
200
tf
100
tr
50
•
VGS = 10 V, VDD = 30 V
PW = 2 µs, duty < 1 %
•
20
td(on)
10
0.5
1.0
2
5
10
20
Drain Current ID (A)
50
2SK1302
Reverse Drain Current vs.
Source to Drain Voltage
Reverse Drain Current IDR (A)
20
Pulse Test
16
12
10 V
5V
8
4
VGS = 0, –5 V
0
0.4
0.8
1.2
1.6
2.0
Normalized Transient Thermal Impedance γs (t)
Source to Drain Voltage VSD (V)
Normalized Transient Thermal Impedance vs. Pulse Width
3
TC = 25°C
D=1
1.0
0.5
0.3
0.2
0.1
0.1
0.05
θch–c (t) = γs (t) • θch–c
θch–c = 2.50°C/W, TC = 25°C
PDM
0.02
1
lse
0.03 0.0 t Pu
o
h
1S
0.01
10 µ
T
100 µ
1m
100 m
10 m
D =PW
T
PW
1
10
Pulse Width PW (S)
Switching Time Test Circuit
Waveforms
Vin Monitor
90 %
Vout Monitor
Vin
D.U.T
10 %
RL
Vout
50 Ω
Vin = 10 V
Rev.2.00 Sep 07, 2005 page 5 of 6
.
VDD =. 30 V
td(on)
10 %
90 %
tr
10 %
90 %
td(off)
tf
2SK1302
Package Dimensions
JEITA Package Code
RENESAS Code
Package Name
MASS[Typ.]
SC-46
PRSS0004AC-A
TO-220AB / TO-220ABV
1.8g
Unit: mm
2.79 ± 0.2
11.5 Max
10.16 ± 0.2
9.5
φ 3.6
1.26 ± 0.15
15.0 ± 0.3
18.5 ± 0.5
1.27
6.4
+0.2
–0.1
8.0
4.44 ± 0.2
+0.1
–0.08
7.8 ± 0.5
0.76 ± 0.1
14.0 ± 0.5
2.7 Max
1.5 Max
0.5 ± 0.1
2.54 ± 0.5
2.54 ± 0.5
Ordering Information
Part Name
2SK1302-E
Quantity
500 pcs
Shipping Container
Box (Sack)
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.2.00 Sep 07, 2005 page 6 of 6
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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