2SK3641 Data Sheet

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3641
SWITCHING
N-CHANNEL POWER MOS FET
ORDERING INFORMATION
DESCRIPTION
The 2SK3641 is N-channel MOS FET device that features a low
on-state resistance and excellent switching characteristics, and
PART NUMBER
PACKAGE
2SK3641-ZK
TO-252 (MP-3ZK)
designed for low voltage high current applications such as
DC/DC converter with synchronous rectifier.
FEATURES
(TO-252)
• Low on-state resistance
RDS(on)1 = 14 mΩ MAX. (VGS = 10 V, ID = 18 A)
RDS(on)2 = 25 mΩ MAX. (VGS = 4.5 V, ID = 15 A)
• Low Ciss: Ciss = 930 pF TYP.
• Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
30
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25°C)
ID(DC)
±36
A
ID(pulse)
±140
A
Total Power Dissipation (TC = 25°C)
PT1
29
W
Total Power Dissipation
PT2
1.0
W
Channel Temperature
Tch
150
°C
Drain Current (pulse)
Note1
Storage Temperature
Tstg
–55 to +150
°C
Single Avalanche Current
Note2
IAS
19
A
Single Avalanche Energy
Note2
EAS
36
mJ
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, L = 100 µH, VGS = 20 → 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D15969EJ3V0DS00 (3rd edition)
Date Published January 2005 NS CP(K)
Printed in Japan
The mark
shows major revised points.
2002
2SK3641
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = 30 V, VGS = 0 V
10
µA
Gate Leakage Current
IGSS
VGS = ±20 V, VDS = 0 V
±10
µA
VGS(off)
VDS = 10 V, ID = 1 mA
1.5
2.5
V
| yfs |
VDS = 10 V, ID = 18 A
5.5
RDS(on)1
VGS = 10 V, ID = 18 A
11
14
mΩ
RDS(on)2
VGS = 4.5 V, ID = 15 A
17
25
mΩ
Ciss
VDS = 10 V
930
pF
Coss
VGS = 0 V
250
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
160
pF
Turn-on Delay Time
td(on)
VDD = 15 V, ID = 18 A
9.4
ns
tr
VGS = 10 V
8.6
ns
td(off)
RG = 10 Ω
34
ns
11
ns
Gate Cut-off Voltage
Forward Transfer Admittance
Note
Drain to Source On-state Resistance
Note
Input Capacitance
Output Capacitance
Rise Time
Turn-off Delay Time
Fall Time
11
tf
S
Total Gate Charge
QG
VDD = 24 V
22
nC
Gate to Source Charge
QGS
VGS = 10 V
3.6
nC
QGD
ID = 36 A
7.4
nC
VF(S-D)
IF = 36 A, VGS = 0 V
1.0
V
Reverse Recovery Time
trr
IF = 36 A, VGS = 0 V
24
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A/µs
15
nC
Gate to Drain Charge
Body Diode Forward Voltage
Note
Note Pulsed: PW ≤ 350 µs, Duty Cycle ≤ 2%
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25 Ω
D.U.T.
L
50 Ω
PG.
VGS = 20 → 0 V
TEST CIRCUIT 2 SWITCHING TIME
RL
RG
PG.
VDD
VGS
VGS
Wave Form
0
VGS
10%
90%
VDD
VDS
90%
IAS
VDS
ID
VDS
τ
τ = 1 µs
Duty Cycle ≤ 1%
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
IG = 2 mA
PG.
2
50 Ω
0
10%
10%
tr
td(off)
Wave Form
VDD
Starting Tch
90%
VDS
VGS
0
BVDSS
RL
VDD
Data Sheet D15969EJ3V0DS
td(on)
ton
tf
toff
2SK3641
TYPICAL CHARACTERISTICS (TA = 25°C)
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
120
40
PT - Total Power Dissipation - W
dT - Percentage of Rated Power - %
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
30
20
10
0
0
0
25
50
75
100
125
150
175
0
25
TC - Case Temperature - °C
50
75
100
125
150
175
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
1000
PW = 100 µs
10 µs
I D (D C )
10
R D S(on) Lim ited
(at V G S = 10 V)
DC
1 ms
1
0.1
Power D issipation Lim ited
10 m s
T C = 25°C
Single pulse
0.1
1
10
100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
rth(t) - Transient Thermal Resistance - °C/W
ID - Drain Current - A
I D (pulse)
100
R th(ch-A) = 125°C/W
100
10
R th(ch-C) = 4.31°C/W
1
0.1
0.01
10 µ
Single pulse
100 µ
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet D15969EJ3V0DS
3
2SK3641
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
150
100
V DS = 10 V
Pulsed
Pulsed
ID - Drain Current - A
ID - Drain Current - A
V GS = 10 V
100
4.5 V
50
0
1
2
3
4
0.1
0
1
2
3
4
5
VGS - Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
| yfs | - Forward Transfer Admittance - S
VDS - Drain to Source Voltage - V
V DS = 10 V
ID = 1 m A
2.5
2
1.5
1
0.5
0
-50
0
50
100
100
T ch = −55°C
25°C
75°C
150°C
10
1
V DS = 10 V
Pulsed
0.1
150
0.1
1
10
100
Tch - Channel Temperature - °C
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
50
Pulsed
40
30
20
V GS = 4.5 V
10
10 V
0
1
10
100
1000
RDS(on) - Drain to Source On-state Resistance - mΩ
VGS(off) - Gate Cut-off Voltage - V
1
5
3
50
Pulsed
40
30
20
ID = 18 A
10
ID - Drain Current - A
4
T ch = − 55°C
25°C
75°C
150°C
0.01
0
RDS(on) - Drain to Source On-state Resistance - mΩ
10
Data Sheet D15969EJ3V0DS
0
0
5
10
15
VGS - Gate to Source Voltage - V
20
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
30
1 0 0 00
V GS = 4.5 V
20
15
10 V
10
5
ID = 18 A
Pulsed
C oss
1 00
0
50
100
C rss
VGS = 0 V
f = 1 MHz
10
0 .0 1
0
-50
C iss
1 0 00
150
SWITCHING CHARACTERISTICS
10
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
1000
30
VDS - Drain to Source Voltage - V
td(on), tr, td(off), tf - Switching Time - ns
1
VDS - Drain to Source Voltage - V
Tch - Channel Temperature - °C
V D D = 15 V
V G S = 10 V
R G = 10 Ω
100
t d(off)
t d(on)
10
tf
tr
12
25
10
V D D = 24 V
15 V
6V
20
8
15
6
V GS
10
4
5
2
V DS
I D = 36 A
0
1
0.1
1
10
0
0
100
5
10
15
20
25
QG - Gate Charge - nC
ID - Drain Current - A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
1000
1000
trr - Reverse Recovery Time - ns
IF - Diode Forward Current - A
0.1
VGS - Gate to Source Voltage - V
25
Ciss, Coss, Crss - Capacitance - pF
RDS(on) - Drain to Source On-state Resistance - mΩ
2SK3641
V GS = 10 V
100
0V
10
1
0.1
100
10
di/dt = 100 A/µs
V GS = 0 V
Pulsed
0.01
1
0
0.5
1
1.5
2
VF(S-D) - Source to Drain Voltage - V
0.1
1
10
100
IF - Diode Forward Current - A
Data Sheet D15969EJ3V0DS
5
2SK3641
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
SINGLE AVALANCHE ENERGY
DERATING FACTOR
120
Energy Derating Factor - %
IAS - Single Avalanche Current - A
100
IAS = 19 A
10
E AS = 36 m J
1
V DD = 15 V
R G = 25 Ω
V GS = 20 → 0 V
Starting T ch = 25°C
0.1
0.01
0.1
100
80
60
40
20
0
1
10
L - Inductive Load - mH
6
V DD = 15 V
R G = 25 Ω
V GS = 20 → 0 V
IAS ≤ 19 A
25
50
75
100
125
150
Starting Tch - Starting Channel Temperature - °C
Data Sheet D15969EJ3V0DS
2SK3641
PACKAGE DRAWING (Unit: mm)
TO-252 (MP-3ZK)
2.3±0.1
1.0 TYP.
6.5±0.2
5.1 TYP.
4.3 MIN.
0.5±0.1
No Plating
3
1.14 MAX.
0.51 MIN.
2
0.8
1
6.1±0.2
10.4 MAX. (9.8 TYP.)
4.0 MIN.
4
No Plating
0 to 0.25
0.5±0.1
0.76±0.12
2.3
2.3
1. Gate
2. Drain
3. Source
4. Fin (Drain)
1.0
EQUIVALENT CIRCUIT
Drain
Body
Diode
Gate
Gate
Protection
Diode
Remark
Source
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
Data Sheet D15969EJ3V0DS
7
2SK3641
• The information in this document is current as of January, 2005. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may
appear in this document.
• NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from the use of NEC Electronics products listed in this document
or any other liability arising from the use of such products. No license, express, implied or otherwise, is
granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.
• Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of a customer's equipment shall be done under the full
responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by
customers or third parties arising from the use of these circuits, software and information.
• While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products,
customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To
minimize risks of damage to property or injury (including death) to persons arising from defects in NEC
Electronics products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment and anti-failure features.
• NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and
"Specific".
The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC
Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of
each NEC Electronics product before using it in a particular application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots.
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support).
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC
Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications
not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to
determine NEC Electronics' willingness to support a given application.
(Note)
(1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its
majority-owned subsidiaries.
(2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as
defined above).
M8E 02. 11-1
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