datasheet for RF7178 by RF Micro Devices, Inc.

datasheet for RF7178 by RF Micro Devices, Inc.
RF7178
RF7178QuadBand
GSM850/900
/DCS/PCS
TxM with Integrated Receive
SAW Filters
QUAD-BAND GSM850/900/DCS/PCS TXM
WITH INTEGRATED RECEIVE SAW FILTERS
Package: Module 6.63mmx7.25mm1.0mm
1
Features
̈
̈
̈
̈
̈
̈
̈
̈
̈
Single Module Placement
(SMPL)
Proven PowerStar®
Architecture
Integrated RX SAW Filters
Integrated Power Flattening
Circuit
Integrated VRAMP Filter
No External Routing
Simplifies Layout
Differential RX Ports Allow
Layout Flexibility
Robust 8kV ESD Protection at
Antenna Port
VBATT Tracking
Applications
̈
̈
̈
̈
3V Quad-Band GSM/GPRS
Handsets
GSM850/EGSM900/DCS180
0/PCS1900 Products
GPRS Class 12 Compliant
Portable Battery-Powered
Equipment
26
25
24
23
22
21
2
20
3
19
4
18
5
17
6
16
7
15
8
9
10
11
12
13
14
Functional Block Diagram
Product Description
The RF7178 is a quad-band (GSM850/EGSM900/DCS1800/PCS1900) GSM/GPRS Class 12
compliant Transmit Module with integrated Receive all SAW Filters S/B Caps. This transmit
module is the next step of integration to include a multi function CMOS controller, GaAs HBT
power amplifier, pHEMT front-end antenna switch and RX SAW filters all in one package for a
true single front end solution. The four RX ports are 150Ω impedance and provide a differential
output to allow flexibility when interfacing with various transceiver configurations. The RF7178
continues to builds upon RFMD’s leading patented PowerStar® Architecture to include such
features as Power Flattening Circuit, VRAMP Filtering, and VBATT Tracking. The highly integrated
transmit module simplifies the phone design by eliminating the need for complicated control
loop design, output RF spectrum, (ORFS) optimization, harmonic filtering, and component
matching, all of which combine to provide best in class RF performance, solution size, and ease
of implementation for cellular phone systems. The TX RF ports are 50Ω matched and the
antenna port includes ESD protection circuitry which meets the stringent 8kV industry standards requiring no additional components. All of these eliminated factors help to improve the
customer’s product time to market.
Ordering Information
RF7178
RF7178SB
RF7178PCBA-41X
Quad-Band GSM850/900/DCS/PCS TxM with Integrated
Receive SAW Filters
Transmit Module 5-Piece Sample Pack
Fully Assembled Evaluation Board
Optimum Technology Matching® Applied
XGaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
XGaAs pHEMT
XSi CMOS
Si BJT
GaN HEMT
RF MEMS
LDMOS
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
Rev A0 DS091023
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected]
1 of 22
RF7178
Absolute Maximum Ratings
Parameter
Rating
Unit
Supply Voltage
-0.3 to +6.0
V
Power Control Voltage (VRAMP)
-0.3 to +1.8
V
Input RF Power
+10
dBm
Max Duty Cycle
50
%
Output Load VSWR
20:1
Operating Case Temperature
-20 to +85
°C
Storage Temperature
-55 to +150
°C
Parameter
Min.
Specification
Typ.
Max.
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice.
Unit
Condition
ESD
ESD: All Pins Excluding RX SAW
Pins
1000
V
HBM, JESD22-A114
ESD: All Pins
250
V
HBM, JESD22-A114
ESD: All PIns Excluding RX SAW
Pins
1000
V
CDM, JEDEC JESD22-C101
ESD: All Pins
300
V
CDM, JEDEC JESD22-C101
8
kV
IEC 61000-4-2
1.8
V
Max. POUT
V
Min. POUT
20
pF
DC to 200kHz
μA
VRAMP =VRAMP, MAX
dB
VRAMP =0.25V to VRAMP, MAX
ESD: Antenna Port
Overall Power Control VRAMP
Power Control “ON”
Power Control “OFF”
0.25
VRAMP Input Capacitance
15
VRAMP Input Current
10
Power Control Range
50
Overall Power Supply
Power Supply Voltage
3.0
Power Supply Current
3.5
4.8
V
Operating Limits
1
20
μA
PIN <-30dBm, TX Enable=Low, VRAMP =0.25V,
Temp=-20°C to +85°C, VBATT =4.8V.
Overall Control Signals
GpCtrl0/1/2 “Low”
0
0
0.5
V
GpCtrl0/1/2 “High”
1.25
2.0
3.0
V
1
2
μA
TX Enable “Low”
0
0
0.5
V
TX Enable “High”
1.25
2.0
3.0
V
2
μA
GpCtrl0/1/2 “High Current”
TX Enable “High Current”
1
RF Port Input and Output
Impedance
50
Ω
Differential RX Output Impedance
150
Ω
2 of 22
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected]
Rev A0 DS091023
RF7178
Parameter
Min.
Specification
Typ.
Max.
Unit
Nominal conditions unless otherwise stated.
All unused ports are terminated. VBATT =3.5V,
PIN =3dBm, Temp=+25°C, TX Enable=High,
VRAMP=1.8V. TX Mode: GpCtrl2=Low,
GpCtrl1=High, GpCtrl0=Low, Duty Cycle=25%,
Pulse Width=1154μS
GSM850 Band
Operating Frequency Range
Input Power
824
0
Input VSWR
Maximum Output Power
Condition
849
MHz
3
6
dBm
2:1
2.5:1
Full POUT guaranteed at minimum drive level.
Over POUT range (5dBm to 33dBm)
33
33.7
dBm
Nominal conditions.
31
33.7
dBm
VBATT =3.1V to 4.8V, PIN =0dBm to 6dBm,
Temp=-20°C to +85°C, Duty Cycle=50%,
Pulse Width=2308mS, VRAMP <1.8V.
Minimum Power Into 3:1 VSWR
30
31.5
dBm
The measured delivered output power to the
load with the mismatch loss already taken into
account with 1dB variation margin.
VBATT=3.5V
Efficiency
36
40
%
Set VRAMP =VRAMP RATED for POUT =33dBm
2nd Harmonic
-40*
-33
dBm
VRAMP =VRAMP RATED for POUT =33dBm. *Typical
value measured from worst case harmonic frequency across the band.
3rd Harmonic
-40*
-33
dBm
VRAMP =VRAMP RATED for POUT =33dBm. *Typical
value measured from worst case harmonic frequency across the band.
All other harmonics up to
12.75GHz
-40
-33
dBm
VRAMP =VRAMP RATED for POUT =33dBm.
-36
dBm
VRAMP =VRAMP RATED for POUT =33dBm, also
over all power levels (5dBm to 33dBm).
-41
dBm
TX Enable Low, PIN =6dBm, VRAMP =0.25V.
Non-harmonic Spurious up to
12.75GHz
Forward Isolation 1
-57
Forward Isolation 2
-27
-15
dBm
TX Enable High, PIN =6dBm, VRAMP =0.25V.
Output Noise Power
-87.5
-82
dBm
869MHz to 894MHz. VRAMP =VRAMP RATED for
POUT =33dBm, RBW=100kHz.
-118
-74
dBm
1930MHz to 1990MHz. VRAMP =VRAMP RATED
for POUT =33dBm, RBW=100kHz.
-36
dBm
VSWR=12:1, all phase angles (Set
VRAMP=VRAMP RATED for POUT <33dBm into 50Ω
load; load switched to VSWR=12:1).
Output Load VSWR Stability
(Spurious Emissions)
Output Load VSWR Ruggedness
Rev A0 DS091023
No damage or permanent degradation to
device
VSWR=20:1, all phase angles (Set
VRAMP=VRAMP RATED for POUT <33dBm into 50Ω
load; load switched to VSWR=20:1).
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected]
3 of 22
RF7178
Parameter
Min.
Specification
Typ.
Max.
Unit
Nominal conditions unless otherwise stated.
All unused ports are terminated. VBATT =3.5V,
PIN =3dBm, Temp=+25°C, TX Enable=High,
VRAMP=1.8V. TX Mode: GpCtrl2=Low,
GpCtrl1=High, GpCtrl0=Low, Duty Cycle=25%,
Pulse Width=1154μS
EGSM900 Band
Operating Frequency Range
Input Power
880
0
Input VSWR
Maximum Output Power
Condition
915
MHz
3
6
dBm
2:1
2.5:1
Full POUT guaranteed at minimum drive level.
Over POUT range (5dBm to 33dBm).
33
33.7
dBm
Nominal conditions.
31
33.7
dBm
VBATT =3.1V to 4.8V, PIN =0dBm to 6dBm,
Temp=-20°C to +85°C, Duty Cycle=50%,
Pulse Width=2308mS, VRAMP <1.8V.
Minimum Power Into 3:1 VSWR
30
31.5
dBm
The measured delivered output power to the
load with the mismatch loss already taken into
account with 1dB variation margin.
VBATT =3.5V.
Efficiency
36
40
%
Set VRAMP =VRAMP RATED for POUT =33dBm
2nd Harmonic
-40*
-33
dBm
VRAMP =VRAMP RATED for POUT =33dBm. *Typical
value measured from worst case harmonic frequency across the band.
3rd Harmonic
-40*
-33
dBm
VRAMP =VRAMP RATED for POUT =33dBm. *Typical
value measured from worst case harmonic frequency across the band.
7th Harmonic
-36
-28
dBm
VRAMP =VRAMP_RATED. *Typical value measured
from worst case harmonic frequency across
the band. External low pass filter can be used
to attenuate the higher order harmonics. (See
Application Schematic for suggested filter.)
All other harmonics up to
12.75GHz
-40
-33
dBm
VRAMP =VRAMP RATED for POUT =33dBm.
-36
dBm
VRAMP =VRAMP RATED for POUT =33dBm, also
over all power levels (5dBm to 33dBm).
-60
-41
dBm
TX Enable Low, PIN =6dBm, VRAMP =0.25V.
Forward Isolation 2
-27
-15
dBm
TX Enable High, PIN =6dBm, VRAMP =0.25V.
Output Noise Power
-86
-77
dBm
925MHz to 935MHz. VRAMP =VRAMP RATED for
POUT =33dBm, RBW=100kHz.
-86
-83
dBm
935MHz to 960MHz. VRAMP =VRAMP RATED for
POUT =33dBm, RBW=100kHz.
-118
-87
dBm
1805MHz to 1880MHz. VRAMP =VRAMP RATED
for POUT =33dBm, RBW=100kHz.
-36
dBm
VSWR=12:1, all phase angles (Set
VRAMP=VRAMP RATED for POUT <33dBm into 50Ω
load; load switched to VSWR=12:1).
Non-harmonic Spurious up to
12.75GHz
Forward Isolation 1
Output Load VSWR Stability
(Spurious Emissions)
Output Load VSWR Ruggedness
4 of 22
No damage or permanent degradation to
device
VSWR=20:1, all phase angles (Set
VRAMP=VRAMP RATED for POUT <33dBm into 50Ω
load; load switched to VSWR=20:1).
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected]
Rev A0 DS091023
RF7178
Parameter
Min.
Specification
Typ.
Max.
Unit
Nominal conditions unless otherwise stated.
All unused ports are terminated. VBATT =3.5V,
PIN =3dBm, Temp=+25°C, TX Enable=High,
VRAMP=1.8V. TX Mode: GpCtrl2=Low,
GpCtrl1=High, GpCtrl0=High, Duty
Cycle=25%, Pulse Width=1154μS
DCS1800 Band
Operating Frequency Range
Input Power
1710
0
Input VSWR
Maximum Output Power
Condition
1785
MHz
3
6
dBm
1.3:1
2.5:1
Full POUT guaranteed at minimum drive level.
Over POUT range (0dBm to 30dBm).
30
31.5
dBm
Nominal conditions.
28
31.5
dBm
VBATT =3.0V to 4.8V, PIN =0dBm to 6dBm,
Temp=-20°C to +85°C, Duty Cycle=50%,
Pulse Width=2308mS, VRAMP <1.8V.
Minimum Power Into 3:1 VSWR
27
28.5
dBm
The measured delivered output power to the
load with the mismatch loss already taken into
account with 1dB variation margin.
VBATT =3.5V.
Efficiency
32
34
%
Set VRAMP =VRAMP RATED for POUT =30dBm
2nd Harmonic
-40*
-33
dBm
VRAMP =VRAMP RATED for POUT =30dBm. *Typical
value measured from worst case harmonic frequency across the band.
3rd Harmonic
-40*
-33
dBm
VRAMP =VRAMP RATED for POUT =30dBm. *Typical
value measured from worst case harmonic frequency across the band.
4th Harmonic
-36*
-28
dBm
VRAMP =VRAMP_RATED. *Typical value measured
from worst case harmonic frequency across
the band. External low pass filter can be used
to attenuate the higher order harmonics. (See
Application Schematic for suggested filter.)
All other harmonics up to
12.75GHz
-40
-33
dBm
VRAMP =VRAMP RATED for POUT =30dBm.
-36
dBm
VRAMP =VRAMP RATED for POUT =30dBm, also
over all power levels (5dBm to 33dBm).
-62
-53
dBm
TX Enable Low, PIN =6dBm, VRAMP =0.25V.
Forward Isolation 2
-27
-15
dBm
TX Enable High, PIN =6dBm, VRAMP =0.25V.
Output Noise Power
-101
-77
dBm
925MHz to 935MHz. VRAMP =VRAMP RATED for
POUT =33dBm, RBW=100kHz.
-100
-83
dBm
935MHz to 960MHz. VRAMP =VRAMP RATED for
POUT =33dBm, RBW=100kHz.
-93
-79
dBm
1805MHz to 1880MHz. VRAMP =VRAMP RATED
for POUT =33dBm, RBW=100kHz.
-36
dBm
VSWR=12:1, all phase angles (Set
VRAMP=VRAMP RATED for POUT <30dBm into 50Ω
load; load switched to VSWR=12:1).
Non-harmonic Spurious up to
12.75GHz
Forward Isolation 1
Output Load VSWR Stability
(Spurious Emissions)
Output Load VSWR Ruggedness
Rev A0 DS091023
No damage or permanent degradation to
device
VSWR=20:1, all phase angles (Set
VRAMP=VRAMP RATED for POUT <30dBm into 50Ω
load; load switched to VSWR=20:1).
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected]
5 of 22
RF7178
Parameter
Min.
Specification
Typ.
Max.
Unit
Nominal conditions unless otherwise stated.
All unused ports are terminated. VBATT =3.5V,
PIN =3dBm, Temp=+25°C, TX Enable=High,
VRAMP=1.8V. TX Mode: GpCtrl2=Low,
GpCtrl1=High, GpCtrl0=High, Duty
Cycle=25%, Pulse Width=1154μS
PCS1900 Band
Operating Frequency Range
Input Power
1850
0
Input VSWR
Maximum Output Power
Condition
1910
MHz
3
6
dBm
1.3:1
2.5:1
Full POUT guaranteed at minimum drive level.
Over POUT range (0dBm to 30dBm).
30
31.5
dBm
Nominal conditions.
28
31.5
dBm
VBATT =3.0V to 4.8V, PIN =0dBm to 6dBm,
Temp=-20°C to +85°C, Duty Cycle=50%,
Pulse Width=2308mS, VRAMP <1.8V.
Minimum Power Into 3:1 VSWR
27
28.5
dBm
The measured delivered output power to the
load with the mismatch loss already taken into
account with 1dB variation margin.
VBATT =3.5V.
Efficiency
32
36
%
Set VRAMP =VRAMP RATED for POUT =30dBm
2nd Harmonic
-40*
-33
dBm
VRAMP =VRAMP RATED for POUT =30dBm. *Typical
value measured from worst case harmonic frequency across the band.
3rd Harmonic
-40*
-33
dBm
VRAMP =VRAMP RATED for POUT =30dBm. *Typical
value measured from worst case harmonic frequency across the band.
4th Harmonic
-36*
-28
dBm
VRAMP =VRAMP RATED for POUT =30dBm. *Typical
value measured from worst case harmonic frequency across the band.External low pass filter
can be used to attenuate the higher order harmonics. (See Application Schematic for suggested filter.)
All other harmonics up to
12.75GHz
-40
-33
dBm
VRAMP =VRAMP RATED for POUT =30dBm.
-36
dBm
VRAMP =VRAMP RATED for POUT =30dBm, also
over all power levels (5dBm to 30dBm).
Non-harmonic Spurious up to
12.75GHz
Forward Isolation 1
-61
-53
dBm
TX Enable Low, PIN =6dBm, VRAMP =0.25V.
Forward Isolation 2
-27
-15
dBm
TX Enable High, PIN =6dBm, VRAMP =0.25V.
Output Noise Power
-101
-82
dBm
869MHz to 894MHz. VRAMP =VRAMP RATED for
POUT =30dBm, RBW=100kHz.
-94
-74
dBm
1930MHz to 1990MHz. VRAMP =VRAMP RATED
for POUT =30dBm, RBW=100kHz.
-36
dBm
VSWR=12:1, all phase angles (Set
VRAMP=VRAMP RATED for POUT <30dBm into 50Ω
load; load switched to VSWR=12:1).
Output Load VSWR Stability
(Spurious Emissions)
Output Load VSWR Ruggedness
6 of 22
No damage or permanent degradation to
device
VSWR=20:1, all phase angles (Set
VRAMP=VRAMP RATED for POUT <30dBm into 50Ω
load; load switched to VSWR=20:1).
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected]
Rev A0 DS091023
RF7178
Parameter
Min.
Specification
Typ.
Max.
Unit
Condition
All parameters tested to Nominal Conditions
unless otherwise stated. VBATT =3.5V,
PIN =3dBm, Temp=+25°C. TXEN=High,
VRAMP =Low (0.25V) See logic table for RX
State. Duty Cycle=25%, Pulse Width=1154uS.
RX Section
GSM850
RX Freq=869MHz to 894MHz
VSWR
2.5:1
Insertion Loss
2.5
Pass Band Ripple
0.5
3.0:1
dB
3.0
dB
Nominal Conditions: see above.
3.5
dB
Extreme Conditions: VBATT =3.0V to 4.8V,
Temp=-20°C to 85°C, PIN =0dBm to 6dBm
1.0
dB
Phase Balance
-10
+10
dB
Amplitude Balance
-1
+1
dB
Attenuation
40
60
dB
Freq=0MHz to 824MHz
40
50
dB
Freq=824MHz to 849MHz
25
45
dB
Freq=914MHz to 960MHz
33
45
dB
Freq=960MHz to 2000MHz
25
50
dB
Freq=2000MHz to 6000MHz
25
40
dB
Freq=6GHz to 12.75GHz
GSM900
RX Freq=925MHz to 960MHz
VSWR
Insertion Loss
Pass Band Ripple
2.5:1
3.0:1
dB
2.7
3.4
dB
Nominal Conditions: see above.
4
dB
Extreme Conditions: VBATT =3.0V to 4.8V,
Temp=-20°C to 85°C, PIN =0dBm to 6dBm
1.0
dB
Phase Balance
-10
0.5
+10
dB
Amplitude Balance
-1
+1
dB
Attenuation
40
60
dB
Freq=0MHz to 880MHz
30
60
dB
Freq=880MHz to 905MHz
20
30
dB
Freq=905MHz to 915MHz
25
30
dB
Freq=980MHz to 1025MHz
33
45
dB
Freq=1025MHz to 2880MHz
25
50
dB
Freq=2880MHz to 6000MHz
25
40
dB
Freq=6GHz to 12.75GHz
DCS1800
RX Freq=1805MHz to 1880MHz
VSWR
2.5:1
Insertion Loss
2.8
Pass Band Ripple
dB
3.5
dB
Nominal Conditions: see above.
4.0
dB
Extreme Conditions: VBATT =3.0V to 4.8V,
Temp=-20°C to 85°C, PIN =0dBm to 6dBm
1.0
dB
Phase Balance
-12
+12
dB
Amplitude Balance
-1.5
+1.5
dB
Attenuation
35
40
dB
Freq=0MHz to 1300MHz
25
35
dB
Freq=1300MHz to 1705MHz
Freq=1705MHz to 1785MHz
Rev A0 DS091023
0.5
3.0:1
13
18
dB
19
25
dB
Freq=1920MHz to 1980MHz
20
30
dB
Freq=1980MHz to 3000MHz
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected]
7 of 22
RF7178
Parameter
Min.
Specification
Typ.
25
45
Max.
Unit
Condition
DCS1800, cont.
dB
Freq=3000MHz to 5000MHz
20
45
dB
Freq=5000MHz to 6000MHz
20
40
dB
Freq=6GHz to 12.75GHz
PCS1900
RX Freq=1930MHz to 1990MHz
VSWR
Insertion Loss
Pass Band Ripple
2.5:1
3.0:1
dB
2.8
3.5
dB
Nominal Conditions: see above.
4.2
dB
Extreme Conditions: VBATT =3.0V to 4.8V,
Temp=-20°C to 85°C, PIN =0dBm to 6dBm
1.0
dB
0.5
Phase Balance
-13
+13
dB
Amplitude Balance
-1.7
+1.7
dB
Attenuation
30
40
dB
Freq=0MHz to 1850MHz
11
20
dB
Freq=1850MHz to 1910MHz
12
20
dB
Freq=2010MHz to 2070MHz
19
25
dB
Freq=2070MHz to 2150MHz
25
40
dB
Freq=2150MHz to 3000MHz
8 of 22
25
45
dB
Freq=3000MHz to 6000MHz
25
40
dB
Freq=6GHz to 12.75GHz
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected]
Rev A0 DS091023
RF7178
TX ENABLE
GpCtrl2
GpCtrl1
GpCtrl0
TX Module Mode
0
0
0
0
Low Power Mode (Standby)
0
1
0
0
RX PCS1900
0
0
1
0
RX DCS1800
Pin
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
0
0
1
1
RX EGSM900
0
0
0
1
RX GSM850
1
0
1
0
GSM850/900 TX Mode
1
0
1
1
DCS1800/PCS1900 TX Mode
Function
GND
GND
RF IN HB
GND
RF IN LB
GND
PCS1900
PCS1900
DCS1800
DCS1800
GND
GSM900
GSM900
GSM850
GSM850
GND
GND
ANTENNA
GND
GND
CPCTRL 2
VBATT
CPCTRL 1
CPCTRL 0
TX EN
VRAMP
Rev A0 DS091023
Description
Ground.
Ground.
RF input to the EGSM850/EGSM900 bands.
Ground.
RF input to the DCS1800/PCS1900 bands.
Ground.
Differential RX output.
Differential RX output.
Differential RX output.
Differential RX output.
Ground.
Differential RX output.
Differential RX output.
Differential RX output.
Differential RX output.
Ground.
Ground.
RF Output to Antenna.
Ground.
Ground.
Logic Control Pin, refer to logic table for mode of operation.
Power Supply for the module.
Logic Control Pin, refer to logic table for mode of operation.
Logic Control Pin, refer to logic table for mode of operation.
PA transmit enable signal, refer to logic table for mode of operation.
Power control voltage from the baseband DAC.
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RF7178
GND
VRAMP
TXEN
GPCTRL0
GPCTRL1
VBATT
Pin Out
GND 1
26
25
24
23
22
GND 2
20 GND
RFIN HB 3
19 GND
27
GND
27
GND
GND 4
18 ANT
RFIN LB 5
17 GND
GND 6
16 GND
27
GND
11
15
12
13
GSM 850
Differential
RX Output
14
GSM900
Differential
RX Output
10
GND
9
DCS1800
Differential
RX Output
PCS1900 7
Differential
RX Output
8
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21 GPCTRL2
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RF7178
Theory of Operation
Overview
The RF7178 is a quad band (GSM850/EGSM900/DCS1800/PCS1900) GSM/GPRS Transmit Module with integrated Receive
SAW Filters.
This transmit module is the next step of integration adding the receive SAW Filters along with a multi function CMOS controller,
GaAs HBT power amplifier, pHEMT front end antenna switch all in one package for a true single front end solution. The integrated RX SAW filters further simplify the phone design by eliminating the need for additional component placemets and circuit
matching.
The RF7178 continues to build upon RFMD’s leading patented PowerStar® Architecture to include such features as Power Flattening Circuit, VRAMP Filtering, and VBATT Tracking.. The integrated power control loop can be driven directly from the baseband
DAC to provide a very predictable power output which enables handset manufacturers to achieve simple and efficient phone
calibration in production.
Features
Power Flattening Circuit
When a mismatch is presented to the antenna of the phone, the output impedance presented to the PA also varies resulting in
variation of output power and current. This can compromise the PA's ability to maintain the minimum output power required
for calls and to limit the total radiated power (TRP), to meet the requirements of governmental agencies and cellular service
providers.
The PFC sets a reference voltage into 50 ohms and the feedback loops corrects for impedance variation reducing the power
and current variation into mismatch conditions.
VRAMP Filtering:
The Vramp control voltage is received from the Baseband DAC. The DAC signal is usually in the form of a staircase waveform
related to the DAC bit resolution and the timing of the power steps. The staircase waveform usually requires some filtering to
smooth out the waveform and reduce any unwanted spectral components showing up in the switching spectra of the RF output
signal. A simple RC filter maybe integrated into the Baseband, Transmit module or with discrete component between the two.
VBATT Tracking / Vramp Limiter
This circuit monitors the relationship of the battery voltage and VRAMP/VCC used to control the PA. At low VBATT levels the FET
pass-device which controls VCC can enter into a saturation region which can increase switching transients. The saturation
detection circuit automatically monitors the battery voltage and produces a correction so that VRAMP is reduced, thus preventing the power control loop from reaching saturation and inducing switching transients.
Rev A0 DS091023
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RF7178
Mode of Operation: Saturated GMSK
In GSM mode, the GMSK modulation is a constant envelope and the useful data is entirely included in the phase of the signal.
Since the constant envelope is not sensitive to amplitude non-linearities caused by the PA, the amplifier can operate in saturation mode (deep class AB or class C) for optimum efficiency. The basic circuit diagram is shown in the Figure 2.
The control circuit receives a DAC voltage (VRAMP) to set the required output power for the phone. The PowerStar I architectures
multiples the VRAMP voltage level and regulates it at the collector (VCC) of all three stages of the amplifier, holding the stages in
saturation. The base bias is fixed at a point that is at least deep class AB or class C. By holding the PA in saturation, performance sensitivity is essentially eliminated to temperature, frequency, voltage and input drive level ensuring robust performance within the ETSI power vs time mask.
VBATT
VRAMP
+
3 dB BW
300kHz
RF IN
-
+
Saturation
Detector
H(s)
VCC
RF OUT
TX ENABLE
The regulation of power is demonstrated in Equation 1. The equation shows that load impedance affects output power, but to
a lesser degree than the VCC supply variations. Since the architecture regulates VCC, the dominant cause of power variation is
eliminated. The control loop provides a very linear relationship between VRAMP and POUT.
2
P OUT
dBm
( 2 ⋅ V CC – V SAT )
= 10 log ------------------------------------------–3
8 ⋅ R1 ⋅ 10
The RF signal applied at the RFIN pin must be a constant amplitude signal and should be high enough to saturate the amplifier
in the GSM mode. The input power (PIN) range is indicated in the specifications. Power levels below this range will result in
reduced maximum output power and the potential for more variation of output power over extreme conditions. Higher input
power is unnecessary and will require more current in the circuitry driving the power amplifier and will increase the minimum
output power.
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RF7178
Power On (Timing) Sequence
In the Power-On Sequence, there are some important set-up times associated with the control signals of the TxM. Refer to the
logic table for control signal functions. One of the critical relationships is the settling time between TXEN going high and when
VRAMP can begin to increase. This time is often referred to as the "pedestal" and is required so that the internal power control
loop and bias circuitry can settle after being turned on. The PowerStar® architecture usually requires approximately 1 - 2µs for
proper settling of the power control loop.
3.0V to 4.8V
VBATT
1. Apply VBATT
2. Apply CPCtrl
3. Apply minimum VRAMP (˜0.25V)
4. Apply TX_EN
5. Apply VRAMP for desired output power
Refer to Logic Table for Correct Mode
GPCtrl
RFIN can be applied at any time. For good
transient response it must be applied
before power ramp begins.
>1.5V PA ON
TX_EN
The Power Down Sequence is the reverse
order of the Power On Sequence.
1.8V for max Pout
~0.25V for min Pout
VRAMP
=0µs =1.5µs
=0µs
Time
Power Ramping
The VRAMP waveform must be created such that the output power falls into the ETSI power versus time mask. The ability to
ramp the RF output power to meet ETSI switching transient and time mask requirements partially depends upon the predictability of output power versus VRAMP response of the power amplifier. The PowerStar® control loop is very capable of meeting
switching transient requirements with the proper raised cosine waveform applied to the VRAMP input. Ramps usually fall within
the 12 - 14us time to control switching transients at high power levels. Faster ramps usually have a steeper transition creating
higher transients. Slower ramps may have difficulty meeting the time mask. Optimization needs to include all power levels as
the time mask requirements change with POUT levels.
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RF7178
The diagram below is the ETSI time mask for a single GSM timeslot.
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RF7178
Application Schematic
VRAMP
TX EN
CPCTRL0 CPCTRL1
VBATT VBATT decoupling capcitor
is application dependant.
C11
22 uF
1
RF IN HB
26
25
24
23
22
21
2
20
3
19
L2
2.2 nH
C1
22 pF
4
RF IN LB
CPCTRL2
L1
2.2 nH
18
5
17
6
16
7
15
ANTENNA
C12
1.2 pF
C2
56 pF
C10
56 pF
C3
22 pF
L3
22 nH
8
9
C4
22 pF
10
11
12
L4
18 nH
C6
22 pF
C7
56 pF
GSM 850
Differential
RX Output
14
C9
56 pF
L5
56 nH
DCS1800
Differential
RX Output
C5
22 pF
13
L6
(DNI)*
C8
56 pF
*Note: GSM850 Frequency Band
does not usually require matching
between differential ports.
GSM900
Differential
RX Output
PCS1900
Differential
RX Output
Notes:
*RF LB/HB inputs and antenna output traces are 50Ω impedance.
RX ports are differential pairs of 150Ω impedance.
**VBATT capacitor value may change depending on application.
***The values listed for the RX differential port matching are suggested values only and may require optimization depending
on application and phone board circuitry.
****If placing an attenuation network on the input to the power amplifier, ensure that it is positioned on the transceiver side
of the capacitor C1 (or C2) to prevent adversely affecting the base biasing of the power amplifier.
*****For control of higher order HB harmonics, a low-pass filter is required on the ANT output. The values listed in this application schematic are suggested only and depend on the particular application, as they are heavily dependent on the phone circuit layout.
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RF7178
Evaluation Board Schematic
VRAMP GPCTRL1 GPCTRL1 GPCTRL1
VBATT
GPCTRL2
+
R1
0Ω
C11
100 pF
C12
100 pF
C17
150 uF
C13
100 pF
C16
10 μF
C14
100 pF
C18
0.1 uF
C15
100 pF
26
J1
RFIN HB
J2
RFIN LB
50 Ω μstrip
C1
56 pF
24
23
22
J11
ANT
21
50 Ω μstrip
50 Ω μstrip
3
50 Ω μstrip
C2
22 pF
18
50 Ω μstrip
50 Ω μstrip
C3
22 pF
50 Ω μstrip
C4
22 pF
50 Ω μstrip
14
8
50 Ω μstrip
J8
L3
82 nH
DNI
50 Ω μstrip
9
12
10
1
2
4
6
11
19
20
27
16
50 Ω μstrip
50 Ω μstrip
J6
C6
22 pF
Notes: L1 – L4 Inductors are not inserted on evaluation board.
The inductor matching is realized in the network analyzer.
C8
56 pF
17
GSM900
Differential
RX Output
50 Ω μstrip
J7
50 Ω μstrip
C7
56 pF
P1
L2
18 nH
DNI
DCS1800
Differential
RX Output
J9
C9
56 pF
13
C5
22 pF
GSM 850
Differential
RX Output
50 Ω μstrip
50 Ω μstrip
50 Ω μstrip
50 Ω μstrip
J5
J10
L4
DNI
7
50 Ω μstrip
50 Ω μstrip
15
L1
22 nH
DNI
J4
C10
56 μF
50 Ω μstrip
5
J3
PCS1900
Differential
RX Output
25
1
GND
2
GND
P1-3
3
VRAMP
P1-4
4
TX EN
P1-5
5
GPCTRL0
P1-6
6
GPCTRL1
7
GND
P1-8
8
VSENSE
P1-9
9
VBATT
P1-10
10
GPCTRL
11
12
GND
13
GND
14
GND
HDR_1X14
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RF7178
Evaluation Board Layout
Rev A0 DS091023
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RF7178
Package Drawing
Notes:
YY indicates year, WW indicates work week, and Trace Code is a sequential number assigned at device assembly.
Shaded areas represent Pin 1 location.
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RF7178
PCB Design Requirements
PCB Surface Finish
The PCB surface finish used for RFMD's qualification process is electroless nickel, immersion gold. Typical thickness is 3μinch
to 8μinch gold over 180μinch nickel.
PCB Land Pattern Recommendation
PCB land patterns for RFMD components are based on IPC-7351 standards and RFMD empirical data. The pad pattern shown
has been developed and tested for optimized assembly at RFMD. The PCB land pattern has been developed to accommodate
lead and package tolerances. Since surface mount processes vary from company to company, careful process development is
recommended.
PCB Metal Land
Solder Mask Pattern
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RF7178
Stencil Pattern
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RF7178
Tape and Reel
Carrier tape basic dimensions are based on EIA 481. The pocket is designed to hold the part for shipping and loading onto SMT
manufacturing equipment, while protecting the body and the solder terminals from damaging stresses. The individual pocket
design can vary from vendor to vendor, but width and pitch will be consistent.
Carrier tape is wound or placed onto a shipping reel either 330mm (13 inches) in diameter or 178mm (7 inches) in diameter.
The center hub design is large enough to ensure the radius formed by the carrier tape around it does not put unnecessary
stress on the parts.
Prior to shipping, moisture sensitive parts (MSL level 2a-5a) are baked and placed into the pockets of the carrier tape. A cover
tape is sealed over the top of the entire length of the carrier tape. The reel is sealed in a moisture barrier ESD bag with the
appropriate units of desiccant and a humidity indicator card, which is placed in a cardboard shipping box. It is important to
note that unused moisture sensitive parts need to be resealed in the moisture barrier bag. If the reels exceed the exposure
limit and need to be rebaked, most carrier tape and shipping reels are not rated as bakeable at 125°C. If baking is required,
devices may be baked according to section 4, table 4-1, of Joint Industry Standard IPC/JEDEC J-STD-033.
The table below provides information for carrier tape and reels used for shipping the devices described in this document.
Tape and Reel
RFMD Part Number
RF7178TR13
RF7178TR7
Reel
Diameter
Inch (mm)
Hub
Diameter
Inch (mm)
Width
(mm)
Pocket Pitch
(mm)
Feed
Units per
Reel
13 (330)
4 (102)
16
8
Single
2500
7 (178)
2.4 (61)
12
8
Single
750
Unless otherwise specified, all dimension tolerances per EIA-481.
400 mm Trailer
Top View
400 mm Leader
Pin 1
Location
Part Number
YYWW
Trace Code
Part Number
YYWW
Trace Code
Part Number
YYWW
Trace Code
Part Number
YYWW
Trace Code
Sprocket holes toward
rear of reel
Direction of Feed
Figure 1. 6.63mmx7.25mmx1.0mm (Carrier Tape Drawing with Part Orientation)
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RF7178
RoHS* Banned Material Content
RoHS Compliant:
Yes
Package total weight in grams (g):
0.121
Compliance Date Code:
-
Bill of Materials Revision:
-
Pb Free Category:
e4
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
* DIRECTIVE 2002/95/EC OF THE EUROPEAN PARLIAMENT AND OF THE COUNCIL of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment
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